这项工作得到了科技部和中华民国的国家科学委员会（合同编号NSC 101-2221-E-027-042和NSC 101-2622-E-027-003-CC2）部资助的。卫生署卫感谢科技的国立台北大学（台北TECH）为Shechtman奖博士 奖。

1.基片制备及清洗<ol><li>选自Si（100）晶片切成10个毫米×10毫米的硅衬底。 </li><li>削减1毫米×10毫米的玻璃基板。 </li><li>使用超声波清洗器来清洗硅和玻璃基板用丙酮进行10分钟，醇为10分钟，然后异丙醇15分钟。 </li><li>冲洗去离子（DI）水洗涤三次衬底。 </li><li>吹干用氮气枪的衬底。 </li></ol> 2. DEZn制备和保存注意:二乙基锌（C 2 H 5）2锌，也称为DEZn，是由一个中心锌绑定到两个乙基高度自燃的有机锌化合物。千万不要使用DEZn时单独工作。 DEZn是非常有毒的氧气和水敏感，千万不要将DEZn附近的水。一定要戴防护口罩和保护眼睛;所有过程必须在通风橱中进行。最重要的是，未使用的DEZn必须bË储存在5℃的环境。 注:对于第一次使用DEZn的，按照步骤2，如果没有，从第3步开始实验。 <ol><li>使用注射器拉出30毫升DEZn从瓶中，然后注入到烧杯放置在一个钢筒。 </li><li>使用镀锌铁管到钢筒与反应室连接。 </li><li>使用机械泵和球阀抽空钢瓶在真空环境（6托）。 注意:DEZn将严重与氧发生反应，必须将其保持在真空环境中。 </li><li>存放未使用DEZn在5℃的环境。 </li></ol> 3. PECVD室准备和ZnO薄膜的合成注意:等离子体增强化学气相沉积的示意图在图1中描绘。 <ol><li>置喷头电极和样品台之间的工作距离为30毫米。 </li> &lt;li&gt;将上反应室中适当位置的试料台的基片，其中有一个从DEZn入口的3厘米的距离。 </li><li>打开旋转泵，并逐步打开闸阀和蝶阀。 </li><li>等到反应室的背景压力小于30毫托以下。 </li><li>关闭闸阀和蝶阀，它连接到旋转泵。 </li><li>然后打开涡轮泵和相对闸阀以达到3×10 -6乇的高真空。 </li><li>达到必要的真空状态后，打开热控制器和加热样品台到合成温度（200，300，400，500，和600℃下不同实验参数）。 </li><li>当温度和压力达到了必要的条件，关闭涡轮泵，然后打开闸阀和蝶阀，其同时连接到旋转泵。 </li><li>接下来，打开进气口阀门，并打开氩克作为同时流量控制器。 </li><li>流动氩气（0.167毫升/秒）到腔室。 </li><li>设定室压至500毫托。 </li><li>转动射频（13.56 MHz）的发电机和匹配网络上，然后将RF功率100瓦用于清除样品表面15分钟。 </li><li>整理的样品的清洗后，关闭RF功率下降至70瓦</li><li>接着，打开二氧化碳气体控制器和气体入口阀。 </li><li>流的二氧化碳（0.5毫升/秒）到腔室。 </li><li>设定为6托的工作压力。 </li><li>后腔室的压力达到6托，流量为携带二乙基锌（DEZn）插入同时连接到DEZn腔室和打开球阀高纯氩气作为载气（0.167毫升/秒）。与此同时，开始ZnO薄膜的合成。 </li><li>继续等离子体合成ZnO薄膜5分钟。 </li><li>后的ZnO薄膜已被合成，逐一关掉RF发生器，球阀，热CON控制器和所有气体流量控制器连同气体入口阀。 </li><li>取出样品时样品台温度冷却到室温。注:冷却速度是约1.8℃/分钟。 </li></ol> 4.制备叉指状花纹到合成的ZnO薄膜注意:光刻工艺的概略图 3中描绘。 <ol><li>使用的热板上烘烤合成的氧化锌的样品，在150℃下 10分钟。 </li><li>放置在旋涂机的样品中，然后分配光刻胶的液体溶液（S1813）用100μl到的ZnO样品。 </li><li>运行旋涂机在800rpm下10秒，然后加速到3000rpm下30秒，以产生均匀的薄层。 </li><li>烘软，在105℃下 90秒的光致抗蚀剂涂氧化锌样品。 </li><li>软烘焙后，使用UV光以暴露光致抗蚀剂涂覆的样品特鲁GH的光掩模通过掩模对准。曝光时间为2秒，功率为400W。 注意:光掩模的图案被设计成相互交叉状，这是0.03毫米宽，4毫米长的（14对），并具有0.15毫米的电极间的间距，如图2中所描绘值得注意的总感光面积是84.32毫米2用于检测器。 </li><li>曝光过程之后，使用镊子裁剪的样品中，然后浸入到稀释显影剂（混合50毫升显影剂和1​​50毫升去离子水）通过从一侧摆动到另一侧为35秒，以获得发达样品的操作。 </li><li>冲洗用DI水发达样品和干燥氮气。 </li><li>使用光学显微镜来检查图案完整。如果没有，用丙酮去除光致抗蚀剂，并重复步骤4.2至4.7，直到完美的格局已经获得。 </li><li>硬烤样品在 120℃下20分钟。 </li></ol><ol><li>使用RF磁控管溅射系统在进行化学剥离过程之前以沉积薄导电Pt层（100纳米）上的显影样本的顶部。 </li><li>设定目标和衬底之间的距离为13毫米。 </li><li>使用机械泵来达到5毫托的低真空。 </li><li>然后，使用涡轮泵，得到的7×10 -7乇的高真空。 </li><li>等待，直到室达到高真空，关闭涡轮泵，随后打开机械泵。 </li><li>流动氩气以0.3毫升/秒到腔室通过马斯流量控制器，直到室压力达到100毫托的工作压力。 </li><li>打开的直流（DC）放电电源和设置直流功率在15瓦为溅射的Pt薄膜的电极上的样品25分钟。 </li><li>之后，铂电极层已磁控sputt化工e圈方法，取出从室中的样本。 </li><li>通过超声波清洗浸没样品放入丙酮液体化学剥离工艺来除去光致抗蚀。 </li><li>设置为1分钟的清洗时间，以彻底清除光致抗蚀剂，然后获得叉指式的铂电极上的氧化锌薄膜。 </li></ol> 6. RTA处理<ol><li>放置作为制造的铂/氧化锌样品放入RTA系统。 </li><li>使用机械泵和闸阀的RTA室压力抽空到20毫乇。 </li><li>等到腔压力达到20毫，流动氩气为0.3毫升/秒到室，并设置5托的工作压力。 </li><li>接下来，将加热速度为100℃/分。 </li><li>然后，退火的样品在450℃下 10分钟。 </li><li>一旦退火，等到样品冷却至室温，然后取出样品。 </li></ol>

<ol>
	<li>Choppali, U., Kougianos, E., Mohanty, S. P., Gorman, B. P. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Influence+of+annealing+on+polymeric+derived+ZnO+thin+films+on+sapphire.">Influence of annealing on polymeric derived ZnO thin films on sapphire.</a> Thin Solid Films. 545, 466-470 (2013).</li><li>Bedia, F. Z., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Effect+of+tin+doping+on+optical+properties+of+nanostructured+ZnO+thin+films+grown+by+spray+pyrolysis+technique.">Effect of tin doping on optical properties of nanostructured ZnO thin films grown by spray pyrolysis technique.</a> J. Alloy. Compd. 616, 312-318 (2014).</li><li>Liu, W. S., Wu, S. Y., Hung, C. Y., Tseng, C. H., Chang, Y. L. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Improving+the+optoelectronic+properties+of+gallium+ZnO+transparent+conductive+thin+films+through+titanium+doping.">Improving the optoelectronic properties of gallium ZnO transparent conductive thin films through titanium doping.</a> J. Alloy. Compd. 616, 268-274 (2014).</li><li>Baik, K. H., Kim, H., Kim, J., Jung, S., Jang, S. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Nonpolar+light+emitting+diode+with+sharp+near-ultraviolet+emissions+using+hydrothermally+grown+ZnO+on+p-GaN.">Nonpolar light emitting diode with sharp near-ultraviolet emissions using hydrothermally grown ZnO on p-GaN.</a> Appl. Phys. Lett. 103, 091107 (2013).</li><li>Han, S. J., Huang, W., Shi, W., Yu, J. S. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Performance+improvement+of+organic+field-effect+transistor+ammonia+gas+sensor+using+ZnO/PMMA+hybrid+as+dielectric+layer.">Performance improvement of organic field-effect transistor ammonia gas sensor using ZnO/PMMA hybrid as dielectric layer.</a> Sens Actuator B-Chem. 203, 9-16 (2014).</li><li>Chizhov, A. S., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Visible+light+activated+room+temperature+gas+sensors+based+on+nanocrystalline+ZnO+sensitized+with+CdSe+quantum+dots.">Visible light activated room temperature gas sensors based on nanocrystalline ZnO sensitized with CdSe quantum dots.</a> Sens Actuator B-Chem. 205, 305-312 (2014).</li><li>Li, C., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Effects+of+substrate+on+the+structural,+electric+and+optical+properties+of+Al-doped+ZnO+films+prepared+by+radio+frequency+magnetron+sputtering.">Effects of substrate on the structural, electric and optical properties of Al-doped ZnO films prepared by radio frequency magnetron sputtering.</a> Thin Solid Films. 517, 3265-3268 (2009).</li><li>Ellmer, K. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Resistivity+of+polycrystalline+zinc+oxide+films:+current+status+and+physical+limit.">Resistivity of polycrystalline zinc oxide films: current status and physical limit.</a> J. Phys. D: Appl. Phys. 34, 3097 (2001).</li><li>Wang, F. G., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=optical+and+electrical+properties+of+Hf-doped+ZnO+transparent+conducting+films+prepared+by+sol-gel+method.">optical and electrical properties of Hf-doped ZnO transparent conducting films prepared by sol-gel method.</a> J. Alloy. Compd. 623, 290-297 (2015).</li><li>Senay, V., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=ZnO+thin+film+synthesis+by+reactive+radio+frequency+magnetron+sputtering.">ZnO thin film synthesis by reactive radio frequency magnetron sputtering.</a> Appl. Surf. Sci. 318, 2-5 (2014).</li><li>Chi, P. W., Su, C. W., Jhuo, B. H., Wei, D. H. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Photoirradiation+caused+controllable+wettability+switching+of+sputtered+highly+aligned+c-axis-oriented+zinc+oxide+columnar+films.">Photoirradiation caused controllable wettability switching of sputtered highly aligned c-axis-oriented zinc oxide columnar films.</a> Int. J. Photoenergy. 2014, 765209 (2014).</li><li>Jamal, R. K., Hameed, M. A., Adem, K. A. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Optical+properties+of+nanostructured+ZnO+prepared+by+a+pulsed+laser+deposition+technique.">Optical properties of nanostructured ZnO prepared by a pulsed laser deposition technique.</a> Mater. Lett. 132, 31-33 (2014).</li><li>Kobayashi, T., Nakada, T. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Effects+of+post-deposition+on+transparent+conductingZnO:B+thin+films+grown+by+MOCVD.">Effects of post-deposition on transparent conductingZnO:B thin films grown by MOCVD.</a> Jpn. J. Appl. Phys. 53, 05FA03 (2014).</li><li>Chao, C. H., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Postannealing+effect+at+various+gas+ambients+on+ohmic+contacts+of+Pt/ZnO+nanobilayers+toward+ultraviolet+photodetectors.">Postannealing effect at various gas ambients on ohmic contacts of Pt/ZnO nanobilayers toward ultraviolet photodetectors.</a> Int. J. Photoenergy. 2013, 372869-1155 (2013).</li><li>Barankin, M. D., Gonzalez II, E., Ladwig, A. M., Hicks, R. F. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Plasma-enhanced+chemical+vapor+deposition+of+zinc+oxide+at+atmospheric+pressure+and+low+temperature.">Plasma-enhanced chemical vapor deposition of zinc oxide at atmospheric pressure and low temperature.</a> 91, 924-930 (2007).</li><li>Fons, P., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Uniaxial+locked+epitaxy+of+ZnO+on+the+&#945;+face+of+sapphire.">Uniaxial locked epitaxy of ZnO on the &#945; face of sapphire.</a> Appl. Phys. Lett. 77, 1801 (2000).</li><li>Ko, H. J., Chen, Y., Hong, S. K., Yao, T. a. k. a. f. u. m. i. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=MBE+growth+of+high-quality+ZnO+films+on+epi-GaN.">MBE growth of high-quality ZnO films on epi-GaN.</a> J. Cryst. Growth. 209, 816-821 (2000).</li><li>Park, D. J., Lee, J. Y., Park, T. E., Kim, Y. Y., Cho, H. K. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Improved+microstructural+properties+of+a+ZnO+thin+film+using+a+buffer+layer+in-situ+annealed+in+argon+ambient.">Improved microstructural properties of a ZnO thin film using a buffer layer in-situ annealed in argon ambient.</a> Thin Solid Films. 515, 6721-6725 (2000).</li><li>Kim, M. S., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Nitrogen-passivation+effects+of+Si+substrates+on+the+properties+of+ZnO+epitaxial+layers+grown+by+using+plasma-assisted+molecular+beam+epitaxy.">Nitrogen-passivation effects of Si substrates on the properties of ZnO epitaxial layers grown by using plasma-assisted molecular beam epitaxy.</a> J. Korean Phys. Soc. 56, 827-831 (2010).</li><li>Li, G. M., Zhang, J. W., Hou, X. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Temperature+dependence+of+performance+of+ZnO-based+metal-semiconductor-metal+ultraviolet+photodetectors.">Temperature dependence of performance of ZnO-based metal-semiconductor-metal ultraviolet photodetectors.</a> Sens. Actuator A-Phys. 209, 149-153 (2014).</li><li>Wang, X. F., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=superhigh+gain+visible-blind+UV+detector+and+optical+logic+gates+based+on+nonpolar+a-axial+GaN+nanowire.">superhigh gain visible-blind UV detector and optical logic gates based on nonpolar a-axial GaN nanowire.</a> Nanoscale. 6, 12009-12017 (2014).</li><li>Inamdar, S. I., Rajpure, K. Y. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=High-performance+metal-semiconductor-metal+UV+photodetector+based+on+spray+deposited+ZnO+thin+films.">High-performance metal-semiconductor-metal UV photodetector based on spray deposited ZnO thin films.</a> J. Alloy. Compd. 595, 55-59 (2014).</li><li>Tian, C. G., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Effects+of+continuous+annealing+on+the+performance+of+ZnO+based+metal-semiconductor-metal+ultraviolet+photodetectors.">Effects of continuous annealing on the performance of ZnO based metal-semiconductor-metal ultraviolet photodetectors.</a> Mater. Sci. Eng. B-Adv. Funct.Solid-State Mater. 184, 67-71 (2014).</li><li>Chen, H. Y., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Realization+of+a+self-powered+ZnO+MSM+UV+photodetector+with+high+responsivity+using+an+asymmetric+pair+of+Au+electrodes.">Realization of a self-powered ZnO MSM UV photodetector with high responsivity using an asymmetric pair of Au electrodes.</a> J. Mater. Chem. C. 2, 9689-9694 (2014).</li><li>Subramanyam, T. K., Srinivasulu Naidu, ., S, S., Uthanna, <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Effect+of+substrate+temperature+on+the+physical+properties+of+DC+reactive+magnetron+sputtered+ZnO+films.">Effect of substrate temperature on the physical properties of DC reactive magnetron sputtered ZnO films.</a> Opt. Mater. 13, 239-247 (1999).</li><li>Iwanaga, H., Kunishige, A., Takeuchi, S. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Anisotropic+thermal+expansion+in+wurtzite-type+crystals.">Anisotropic thermal expansion in wurtzite-type crystals.</a> J. Mater. Sci. 35, 2451-2454 (2000).</li><li>Okaji, M. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Absolute+thermal+expansion+measurements+of+single-crystal+silicon+in+the+range+300-1300+K+with+an+interferometric+dilatometer.">Absolute thermal expansion measurements of single-crystal silicon in the range 300-1300 K with an interferometric dilatometer.</a> Int. J. Thermophys. 9, 1101-1109 (1988).</li><li>Pearse, R. W. B., Lichtenberg, A. J. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=.">.</a> The identification of molecular spectra. , (1976).</li><li>Chao, C. H., Wei, D. H. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Growth+of+non-polar+ZnO+thin+films+with+different+working+pressures+by+plasma+enhanced+chemical+vapor+deposition.">Growth of non-polar ZnO thin films with different working pressures by plasma enhanced chemical vapor deposition.</a> Jpn. J. Appl. Phys. 53, 11RA05 (2014).</li><li>Lin, B., Fu, Z., Green Jia, Y. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=luminescent+center+in+undoped+zinc+oxide+films+deposited+on+silicon+substrate.">luminescent center in undoped zinc oxide films deposited on silicon substrate.</a> Appl. Phys. Lett. 79, 943-945 (2001).</li><li>Koida, T., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Radiative+and+nonradiative+excitonic+transitions+in+nonpolar+(110)+and+polar+(000)+and+(0001)+ZnO+epilayers.">Radiative and nonradiative excitonic transitions in nonpolar (110) and polar (000) and (0001) ZnO epilayers.</a> Appl. Phys. Lett. 84 (110), 1079 (2004).</li></ol>

The authors declare that they have no competing financial interests.

关键步骤和修改在步骤1中，基片应彻底清洗和步骤1.3至1.5，接着，以确保有在衬底上没有油脂或有机和无机污染物。在基板表面上的任何油脂或有机和无机污染物将显著降低薄膜的密合性。 步骤2是ZnO膜制备过程之前，最重要的过程。 DEZn是非常有毒，与水发生剧烈反应，容易点燃时与空气接触。 DEZn必须非常小心地注入到钢筒，然后抽立即降到6乇。在步...

氧化锌是一种很有前途的宽带隙官能半导体材料由于其独特的性能，如高化学稳定性，成本低，无毒性，对于光泵浦低功率的阈值，宽直接带隙（3.37电子伏特）在RT和大的激子结合〜60兆电子伏的能量1-2。最近，ZnO薄膜已经用于许多应用领域，包括透明导电氧化物（TCO）薄膜，蓝光发光器件，场效应晶体管，和气体传感器3-6。另一方面，ZnO是候选材料来代替铟锡氧化物（ITO）由于铟和锡是罕见的和昂贵的。而且，氧化锌具有在可见波长区域和低电阻率的ITO薄膜7-8相比高光透射率。因此，氧化锌的制备，表征和应用进行了广泛的报道。目前这个研究的重点是通过简单的合成高c轴 （0002）ZnO薄膜ð有效方法及其对紫外探测器的实际应用。 最近的研究报告的结果显示，高品质的ZnO薄膜可以通过各种技术来合成，如溶胶-凝胶法，射频磁控溅射，金属有机化学气相沉积（MOCVD），等9-14。每种技术都有其优点和缺点。例如，溅射沉积的主要优点是，靶材料具有非常高的熔点费力溅射到衬底上。与此相反，在溅射过程中很难与剥离组合以构建膜。在我们的研究中，等离子体增强化学气相沉积（PECVD）系统被用于合成高质量c轴 ZnO薄膜。等离子体轰击是在合成过程中，可以增加薄膜的密度，增强了离子分解反应速率15的一个关键因素。于此外，较高的增长速度，并大面积均匀沉积是PECVD技术等优势明显。 除了合成技术，在基板上的良好的粘接性是另一个深思熟虑的问题。在许多研究中，c面蓝宝石已被广泛地用作底物合成高c轴 ZnO薄膜由于ZnO和蓝宝石具有相同的六方晶格结构。然而，氧化锌，合成在蓝宝石衬底上显示出粗糙的表面形貌和高残留（缺陷相关）载体由于取向的面内方向16上的 ZnO和c面蓝宝石（18％）之间的大的晶格不称职的浓度。与蓝宝石衬底相比，一个Si晶片是另一种广泛使用为基材的氧化锌的合成。 Si晶片已被广泛用于在半导体工业;因此，高品质的ZnO薄膜的Si基增长是非常重要的，neces萨利。不幸的是，氧化锌和Si之间的晶体结构和热膨胀系数明显不同，导致晶体质量的劣化。超过过去的十年中，已经取得了很大的努力，通过使用各种方法，包括的ZnO缓冲层17，退火在各种气体气氛18，并在Si衬底表面19的钝化改善ZnO薄膜在硅衬底的质量。本研究成功地提供了一个简单而有效的方法来合成高c轴的ZnO薄膜到硅衬底没有任何缓冲层或前处理。实验结果表明，ZnO薄膜的最佳生长温度下合成显示良好的晶体和光学质量。晶体结构，RF等离子体组合物，表面形貌，和ZnO薄膜的光学性质通过X射线衍射（XRD），光学发射光谱（OES），场发射SC调查安宁电子显微镜（FE-SEM），和RT光致发光（PL）谱，分别。此外，ZnO薄膜的透射率也证实和报告。 该所合成的氧化锌薄膜充当传感层UV光探测器的应用进行了研究这项研究。紫外探测器在紫外辐射监测巨大的应用潜力，光开关，火焰报警和导弹加温系统20-21。有许多类型的其中已经进行了诸如正的固有负（销）模式和金属 - 半导体 - 金属（MSM）结构，包括欧姆接触和肖特基接触光检测器。每种类型都有自己的优点和缺点。目前，MSM光电探测器的结构吸引了密集的兴趣，因为他们的响应，可靠性，响应和恢复时间22-24出色的表现。此处呈现的结果表明，在MSM欧姆接触模式受雇于制作的ZnO薄膜型紫外探测器。这样一种光检测器的典型表现了良好的响应性和可靠性，这表明高c轴的ZnO薄膜是合适的传感层对紫外线光检测器。

<table><tbody><tr><td>RF power supply</td><td>ADVANCED ENERGY</td><td>RFX-600</td><td></td></tr><tr><td>Butterfly valve</td><td>MKS</td><td>253B-1-40-1</td><td></td></tr><tr><td>Mass flow controller</td><td>PROTEC INSTRUMENTS</td><td>PC-540</td><td></td></tr><tr><td>Pressure controller</td><td>MKS</td><td>600 series&amp;nbsp;</td><td></td></tr><tr><td>Heater</td><td>UPGRADE INSTRUMENT CO.</td><td>UI-TC 3001</td><td></td></tr><tr><td>Sputter gun</td><td>AJA INTERNATIONAL</td><td>A320-HA</td><td></td></tr><tr><td>DEZn 1.5M</td><td>ACROS ORGANIC USA, New Jersey</td><td></td><td>also called Diethylzinc (C2H5)2Zn</td></tr><tr><td>Spin coater&amp;nbsp;</td><td>SWIENCO</td><td>PW - 490</td><td></td></tr><tr><td>I-V measurement</td><td>Keithley</td><td>Model: 2400</td><td></td></tr><tr><td>Photocondutive measurement&amp;nbsp;</td><td>Home-built</td><td></td><td></td></tr><tr><td>UV light sourse</td><td>Panasonic</td><td>ANUJ 6160</td><td></td></tr><tr><td>Mask aligner</td><td>Karl Suss</td><td>MJB4</td><td></td></tr><tr><td>Photoresist</td><td>Shipley a Rohm &amp;amp; Haas company</td><td>S1813</td><td></td></tr><tr><td>Developer</td><td>Shipley a Rohm &amp;amp; Haas company</td><td>MF319</td><td></td></tr><tr><td>Silicon wafer</td><td>E-Light Technology Inc</td><td>12/0801</td><td></td></tr><tr><td>Glass substrate</td><td>CORNING</td><td>1737</td><td>P-type / Boron</td></tr></tbody></table>

synthesis and characterization of high c-axis zno thin film by plasma enhanced chemical vapor deposition system and its uv photodetector application

在这项研究中，氧化锌（ZnO）薄膜具有高c轴 （0002）择优取向已成功和有效地通过使用等离子体增强化学气相沉积（PECVD）系统合成到硅（Si）衬底上经由不同的合成温度。不同合成温度对晶体结构，表面形态和光学性能的影响进行了研究。 X射线衍射（XRD）图显示，（0002）衍射峰的强度变强随合成温度，直到400℃。 （0002）峰的衍射强度逐渐成为与外观的（10-10）衍射峰的合成温度较弱的陪同至超过400℃。对RT光致发光（PL）谱显示出强的近带边（NBE）在约375 nm和可忽略的深层次的（DL）发射位于左右575nm的发射UND观察呃高c轴 ZnO薄膜。场发射扫描电子显微镜（FE-SEM）图像显示的均匀表面，并与小晶粒尺寸分布。 ZnO薄膜也被合成到下用于测量透射率的相同参数的玻璃基板。 对于紫外（UV）光检测器的应用的目的，叉指铂（Pt）的薄膜（厚度约100纳米）通过常规光学光刻工艺和射频（RF）磁控溅射制成。为了达到欧姆接触，该装置被退火，在氩环境下，在450℃下通过快速热退火（RTA）系统10分钟。该系统的测量后，电流-电压（I - V）的照片和暗电流和时间依赖的光电流响应结果的曲线显示了良好的响应性和可靠性，这表明高c轴的ZnO薄膜是合适的传感层紫外线探测器的应用。

在ZnO（0002）薄膜具有高c轴择优取向已经成功地通过使用PECVD系统合成到Si衬底。二氧化碳（CO 2）和二乙基锌（DEZn）用作氧气和锌前体，分别。晶ZnO薄膜的结构经X射线衍射（图4），这表明在ZnO薄膜合成的，在400℃下具有最强（0002）衍射峰。当合成温度升高到500℃，（0002）衍射峰逐渐变弱与外观的（10-10）衍射峰陪同。特别是，当合成的温度设定在6...

Watch this Scientific Journal Video about Synthesis and Characterization of High c-axis ZnO Thin Film by Plasma Enhanced Chemical Vapor Deposition System and its UV Photodetector Application at JoVE.c

Synthesis and Characterization of High c-axis ZnO Thin Film by Plasma Enhanced Chemical Vapor Deposition System and its UV Photodetector Application

We offered a method to directly synthesize high c-axis (0002) ZnO thin film by plasma enhanced chemical vapor deposition. The as-synthesized ZnO thin film combined with Pt interdigitated electrode was used as sensing layer for ultraviolet photodetector, showing a high performance through a combination of its good responsivity and reliability.

合成和高c轴ZnO薄膜等离子体的特性增强化学气相沉积系统及其紫外探测器的应用

In this study, zinc oxide (ZnO) thin films with high c-axis (0002) preferential orientation have been successfully and effectively synthesized onto ...

synthesis-characterization-high-c-axis-zno-thin-film-plasma-enhanced

Universidad de Cartagena UDEC

Research

JoVE Journal

Engineering

15.2K 次观看.  National Taipei University of Technology (TAIPEI TECH). We offered a method to directly synthesize high c-axis (0002) ZnO thin film by plasma enhanced chemical vapor deposition. The as-synthesized ZnO thin film combined with Pt interdigitated electrode was used as sensing layer for ultraviolet photodetector, showing a high performance through a combination of its good responsivity and reliability.

视频: Synthesis and Characterization of High c-axis ZnO Thin Film by Plasma Enhanced Chemical Vapor Deposition System and its UV Photodetector Application

Polycrystalline Silicon Thin-film Solar cells with Plasmonic-enhanced Light-trapping

One of major approaches to cheaper solar cells is reducing the amount of semiconductor material used for their fabrication and making cells thinner. To compensate for lower light absorption such physically thin devices have to incorporate light-trapping which increases their optical thickness. Light scattering by textured surfaces is a common technique but it cannot be universally applied to all solar cell technologies. Some cells, for example those made of evaporated silicon, are planar as produced and they require an alternative light-trapping means suitable for planar devices. Metal nanoparticles formed on planar silicon cell surface and capable of light scattering due to surface plasmon resonance is an effective approach.
The paper presents a fabrication procedure of evaporated polycrystalline silicon solar cells with plasmonic light-trapping and demonstrates how the cell quantum efficiency improves due to presence of metal nanoparticles.
To fabricate the cells a film consisting of alternative boron and phosphorous doped silicon layers is deposited on glass substrate by electron beam evaporation. An Initially amorphous film is crystallised and electronic defects are mitigated by annealing and hydrogen passivation. Metal grid contacts are applied to the layers of opposite polarity to extract electricity generated by the cell. Typically, such a ~2 &mu;m thick cell has a short-circuit current density (Jsc) of 14-16 mA/cm2, which can be increased up to 17-18 mA/cm2 (~25% higher) after application of a simple diffuse back reflector made of a white paint.
To implement plasmonic light-trapping a silver nanoparticle array is formed on the metallised cell silicon surface. A precursor silver film is deposited on the cell by thermal evaporation and annealed at 23&deg;C to form silver nanoparticles. Nanoparticle size and coverage, which affect plasmonic light-scattering, can be tuned for enhanced cell performance by varying the precursor film thickness and its annealing conditions. An optimised nanoparticle array alone results in cell Jsc enhancement of about 28%, similar to the effect of the diffuse reflector. The photocurrent can be further increased by coating the nanoparticles by a low refractive index dielectric, like MgF2, and applying the diffused reflector. The complete plasmonic cell structure comprises the polycrystalline silicon film, a silver nanoparticle array, a layer of MgF2, and a diffuse reflector. The Jsc for such cell is 21-23 mA/cm2, up to 45% higher than Jsc of the original cell without light-trapping or ~25% higher than Jsc for the cell with the diffuse reflector only.
Introduction
Light-trapping in silicon solar cells is commonly achieved via light scattering at textured interfaces. Scattered light travels through a cell at oblique angles for a longer distance and when such angles exceed the critical angle at the cell interfaces the light is permanently trapped in the cell by total internal reflection (Animation 1: Light-trapping). Although this scheme works well for most solar cells, there are developing technologies where ultra-thin Si layers are produced planar (e.g. layer-transfer technologies and epitaxial c-Si layers) 1 and or when such layers are not compatible with textures substrates (e.g. evaporated silicon) 2. For such originally planar Si layer alternative light trapping approaches, such as diffuse white paint reflector 3, silicon plasma texturing 4 or high refractive index nanoparticle reflector 5 have been suggested.
Metal nanoparticles can effectively scatter incident light into a higher refractive index material, like silicon, due to the surface plasmon resonance effect 6. They also can be easily formed on the planar silicon cell surface thus offering a light-trapping approach alternative to texturing. For a nanoparticle located at the air-silicon interface the scattered light fraction coupled into silicon exceeds 95% and a large faction of that light is scattered at angles above critical providing nearly ideal light-trapping condition (Animation 2: Plasmons on NP). The resonance can be tuned to the wavelength region, which is most important for a particular cell material and design, by varying the nanoparticle average size, surface coverage and local dielectric environment 6,7. Theoretical design principles of plasmonic nanoparticle solar cells have been suggested 8. In practice, Ag nanoparticle array is an ideal light-trapping partner for poly-Si thin-film solar cells because most of these design principle are naturally met. The simplest way of forming nanoparticles by thermal annealing of a thin precursor Ag film results in a random array with a relatively wide size and shape distribution, which is particularly suitable for light-trapping because such an array has a wide resonance peak, covering the wavelength range of 700-900 nm, important for poly-Si solar cell performance. The nanoparticle array can only be located on the rear poly-Si cell surface thus avoiding destructive interference between incident and scattered light which occurs for front-located nanoparticles 9. Moreover, poly-Si thin-film cells do not requires a passivating layer and the flat base-shaped nanoparticles (that naturally result from thermal annealing of a metal film) can be directly placed on silicon further increases plasmonic scattering efficiency due to surface plasmon-polariton resonance 10.
The cell with the plasmonic nanoparticle array as described above can have a photocurrent about 28% higher than the original cell. However, the array still transmits a significant amount of light which escapes through the rear of the cell and does not contribute into the current. This loss can be mitigated by adding a rear reflector to allow catching transmitted light and re-directing it back to the cell. Providing sufficient distance between the reflector and the nanoparticles (a few hundred nanometers) the reflected light will then experience one more plasmonic scattering event while passing through the nanoparticle array on re-entering the cell and the reflector itself can be made diffuse - both effects further facilitating light scattering and hence light-trapping. Importantly, the Ag nanoparticles have to be encapsulated with an inert and low refractive index dielectric, like MgF2 or SiO2, from the rear reflector to avoid mechanical and chemical damage 7. Low refractive index for this cladding layer is required to maintain a high coupling fraction into silicon and larger scattering angles, which are ensured by the high optical contrast between the media on both sides of the nanoparticle, silicon and dielectric 6. The photocurrent of the plasmonic cell with the diffuse rear reflector can be up to 45% higher than the current of the original cell or up to 25% higher than the current of an equivalent cell with the diffuse reflector only.

Polycrystalline silicon thin-film solar cells on glass are fabricated by deposition of boron and phosphorous doped silicon layers followed by crystallisation, defect passivation and metallisation. Plasmonic light-trapping is introduced by forming Ag nanoparticles on the silicon cell surface capped with a diffused reflector resulting in ~45% photocurrent enhancement.

多晶硅薄膜太阳能电池电浆增强光捕获

One of major approaches to cheaper solar cells is reducing the amount of semiconductor material used for their fabrication and making cells thinner. To ...

科研

工程学

Fabrication of Nano-engineered Transparent Conducting Oxides by Pulsed Laser Deposition

Nanosecond Pulsed Laser Deposition (PLD) in the presence of a background gas allows the deposition of metal oxides with tunable morphology, structure, density and stoichiometry by a proper control of the plasma plume expansion dynamics. Such versatility can be exploited to produce nanostructured films from compact and dense to nanoporous characterized by a hierarchical assembly of nano-sized clusters. In particular we describe the detailed methodology to fabricate two types of Al-doped ZnO (AZO) films as transparent electrodes in photovoltaic devices: 1) at low O2 pressure, compact films with electrical conductivity and optical transparency close to the state of the art transparent conducting oxides (TCO) can be deposited at room temperature, to be compatible with thermally sensitive materials such as polymers used in organic photovoltaics (OPVs); 2) highly light scattering hierarchical structures resembling a forest of nano-trees are produced at higher pressures. Such structures show high Haze factor (&gt;80%) and may be exploited to enhance the light trapping capability. The method here described for AZO films can be applied to other metal oxides relevant for technological applications such as TiO2, Al2O3, WO3 and Ag4O4.

We describe the experimental method to deposit nanostructured oxide thin films by nanosecond Pulsed Laser Deposition (PLD) in the presence of a background gas. By using this method Al-doped ZnO (AZO) films, from compact to hierarchically structured as nano-tree forests, can be deposited.

制备纳米设计的脉冲激光沉积透明导电氧化物

Nanosecond Pulsed  Laser Deposition (PLD) in the presence of a background gas allows the deposition  of metal oxides with tunable morphology, structure, ...

Preparation and Use of Photocatalytically Active Segmented Ag|ZnO and Coaxial TiO2-Ag Nanowires Made by Templated Electrodeposition

Photocatalytically active nanostructures require a large specific surface area with the presence of many catalytically active sites for the oxidation and reduction half reactions, and fast electron (hole) diffusion and charge separation. Nanowires present suitable architectures to meet these requirements. Axially segmented Ag|ZnO and radially segmented (coaxial) TiO2-Ag nanowires with a diameter of 200 nm and a length of 6-20 &#181;m were made by templated electrodeposition within the pores of polycarbonate track-etched (PCTE) or anodized aluminum oxide (AAO) membranes, respectively. In the photocatalytic experiments, the ZnO and TiO2 phases acted as photoanodes, and Ag as cathode. No external circuit is needed to connect both electrodes, which is a key advantage over conventional photo-electrochemical cells. For making segmented Ag|ZnO nanowires, the Ag salt electrolyte was replaced after formation of the Ag segment to form a ZnO segment attached to the Ag segment. For making coaxial TiO2-Ag nanowires, a TiO2 gel was first formed by the electrochemically induced sol-gel method. Drying and thermal annealing of the as-formed TiO2 gel resulted in the formation of crystalline TiO2 nanotubes. A subsequent Ag electrodeposition step inside the TiO2 nanotubes resulted in formation of coaxial TiO2-Ag nanowires. Due to the combination of an n-type semiconductor (ZnO or TiO2) and a metal (Ag) within the same nanowire, a Schottky barrier was created at the interface between the phases. To demonstrate the photocatalytic activity of these nanowires, the Ag|ZnO nanowires were used in a photocatalytic experiment in which H2 gas was detected upon UV illumination of the nanowires dispersed in a methanol/water mixture. After 17 min&#160;of illumination, approximately 0.2 vol% H2 gas was detected from a suspension of ~0.1 g of Ag|ZnO nanowires in a 50 ml 80 vol% aqueous methanol solution.

Preparation and Use of Photocatalytically Active Segmented Ag|ZnO and Coaxial TiO2-Ag Nanowires Made by Templated Electrodeposition

Procedures are outlined to prepare segmented and coaxial nanowires via templated electrodeposition in nanopores. As examples, segmented nanowires consisting of Ag and ZnO segments, and coaxial nanowires consisting of a TiO2 shell and a Ag core were made. The nanowires were used in photocatalytic hydrogen formation experiments.

制备和使用光催化活性分段银|氧化锌和二氧化钛同轴<sub&gt; 2</sub&gt;银纳米线制成由模板电

Photocatalytically active nanostructures require a large specific surface area with the presence of many catalytically active sites for the oxidation and ...

Improved Heterojunction Quality in Cu2O-based Solar Cells Through the Optimization of Atmospheric Pressure Spatial Atomic Layer Deposited Zn1-xMgxO

Atmospheric pressure spatial atomic layer deposition (AP-SALD) was used to deposit n-type ZnO and Zn1-xMgxO thin films onto p-type thermally oxidized Cu2O substrates outside vacuum at low temperature. The performance of photovoltaic devices featuring atmospherically fabricated ZnO/Cu2O heterojunction was dependent on the conditions of AP-SALD film deposition, namely, the substrate temperature and deposition time, as well as on the Cu2O substrate exposure to oxidizing agents prior to and during the ZnO deposition. Superficial Cu2O to CuO oxidation was identified as a limiting factor to heterojunction quality due to recombination at the ZnO/Cu2O interface. Optimization of AP-SALD conditions as well as keeping Cu2O away from air and moisture in order to minimize Cu2O surface oxidation led to improved device performance. A three-fold increase in the open-circuit voltage (up to 0.65 V) and a two-fold increase in the short-circuit current density produced solar cells with a record 2.2% power conversion efficiency (PCE). This PCE is the highest reported for a Zn1-xMgxO/Cu2O heterojunction formed outside vacuum, which highlights atmospheric pressure spatial ALD as a promising technique for inexpensive and scalable fabrication of Cu2O-based photovoltaics.

Improved Heterojunction Quality in Cu2O-based Solar Cells Through the Optimization of Atmospheric Pressure Spatial Atomic Layer Deposited Zn1-xMgxO

Here we present a protocol for synthesizing Zn1-xMgxO/Cu2O heterojunctions in open-air at low temperature via atmospheric pressure spatial atomic layer deposition (AP-SALD) of Zn1-xMgxO on cuprous oxide. Such high quality conformal metal oxides can be grown on a variety of substrates including plastics by this cheap and scalable method.

在铜改善异质结质量<sub&gt; 2</sub&gt; O型的太阳能电池通过大气压力的空间原子层沉积的优化<br /&gt;锌<sub&gt; 1-X</sub&gt;镁<sub系列&gt; X</sub&gt; 0

Atmospheric pressure spatial atomic layer deposition (AP-SALD) was used to deposit n-type ZnO and Zn1-xMgxO thin films onto p-type thermally oxidized Cu2O ...

化学

Synthesis of Hierarchical ZnO/CdSSe Heterostructure Nanotrees

A two-step chemical vapor deposition procedure is here employed to prepare tree-like hierarchical ZnO/CdSSe hetero-nanostructures. The structures are composed of CdSSe branches grown on ZnO nanowires that are vertically aligned on a transparent sapphire substrate. The morphology was measured via scanning electron microscopy. The crystal structure was determined by X-ray powder diffraction analysis. Both the ZnO stem and CdSSe branches have a predominantly wurtzite crystal structure. The mole ratio of S and Se in the CdSSe branches was measured by energy dispersive X-ray spectroscopy. The CdSSe branches result in strong visible light absorption. Photoluminescence (PL) spectroscopy showed that the stem and branches form a type-II heterojunction. PL lifetime measurements showed a decrease in the lifetime of emission from the trees when compared to emission from individual ZnO stems or CdSSe branches and indicate fast charge transfer between CdSSe and ZnO. The vertically aligned ZnO stems provide a direct electron transport pathway to the substrate and allow for efficient charge separation after photoexcitation by visible light. The combination of the abovementioned properties makes ZnO/CdSSe nanotrees promising candidates for applications in solar cells, photocatalysis, and opto-electronic devices.

Here, we prepare and characterize novel tree-like hierarchical ZnO/CdSSe nanostructures, where CdSSe branches are grown on vertically aligned ZnO nanowires. The resulting nanotrees are a potential material for solar energy conversion and other opto-electronic devices.

分层的ZnO / CdSSe异质Nanotrees的合成

A two-step chemical vapor deposition procedure is here employed to prepare tree-like hierarchical ZnO/CdSSe hetero-nanostructures. The structures are ...

Aerosol-assisted Chemical Vapor Deposition of Metal Oxide Structures: Zinc Oxide Rods

Whilst columnar zinc oxide (ZnO) structures in the form of rods or wires have been synthesized previously by different liquid- or vapor-phase routes, their high cost production and/or incompatibility with microfabrication technologies, due to the use of pre-deposited catalyst-seeds and/or high processing temperatures exceeding 900 &#176;C, represent a drawback for a widespread use of these methods. Here, however, we report the synthesis of ZnO rods via a non-catalyzed vapor-solid mechanism enabled by using an aerosol-assisted chemical vapor deposition (CVD) method at 400 &#176;C with zinc chloride (ZnCl2) as the precursor and ethanol as the carrier solvent. This method provides both single-step formation of ZnO rods and the possibility of their direct integration with various substrate types, including silicon, silicon-based micromachined platforms, quartz, or high heat resistant polymers. This potentially facilitates the use of this method at a large-scale, due to its compatibility with state-of-the-art microfabrication processes for device manufacture. This report also describes the properties of these structures (e.g., morphology, crystalline phase, optical band gap, chemical composition, electrical resistance) and validates its gas sensing functionality towards carbon monoxide.

Columnar zinc oxide structures in the form of rods are synthesized via aerosol-assisted chemical vapor deposition without the use of pre-deposited catalyst-seed particles. This method is scalable and compatible with various substrates based on either silicon, quartz or polymers.

金属氧化物结构的气溶胶辅助化学气相沉积: 氧化锌棒

Whilst columnar zinc oxide (ZnO) structures in the form of rods or wires have been synthesized previously by different liquid- or vapor-phase routes, ...

Well-aligned Vertically Oriented ZnO Nanorod Arrays and their Application in Inverted Small Molecule Solar Cells

This manuscript describes how to design and fabricate efficient inverted solar cells, which are based on a two-dimensional conjugated small molecule (SMPV1) and [6,6]-phenyl-C71-butyric acid methyl ester (PC71BM), by utilizing ZnO nanorods (NRs) grown on a high quality Al-doped ZnO (AZO) seed layer. The inverted SMPV1:PC71BM solar cells with ZnO NRs that grew on both a sputtered and sol-gel processed AZO seed layer are fabricated. Compared with the AZO thin film prepared by the sol-gel method, the sputtered AZO thin film exhibits better crystallization and lower surface roughness, according to X-ray diffraction (XRD) and atomic force microscope (AFM) measurements. The orientation of the ZnO NRs grown on a sputtered AZO seed layer shows better vertical alignment, which is beneficial for the deposition of the subsequent active layer, forming better surface morphologies. Generally, the surface morphology of the active layer mainly dominates the fill factor (FF) of the devices. Consequently, the well-aligned ZnO NRs can be used to improve the carrier collection of the active layer and to increase the FF of the solar cells. Moreover, as an anti-reflection structure, it can also be utilized to enhance the light harvesting of the absorption layer, with the power conversion efficiency (PCE) of solar cells reaching 6.01%, higher than the sol-gel based solar cells with an efficiency of 4.74%.

This manuscript describes how to design and fabricate efficient inverted SMPV1:PC71BM solar cells with ZnO nanorods (NRs) grown on a high quality Al-doped ZnO (AZO) seed layer. The well-aligned vertically oriented ZnO NRs exhibit high crystalline properties. The power conversion efficiency of solar cells can reach 6.01%.

定向定向 ZnO 纳米阵列及其在倒小分子太阳电池中的应用

This manuscript describes how to design and fabricate efficient inverted solar cells, which are based on a two-dimensional conjugated small molecule ...

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Heterostructure field effect transistors (HFETs) utilizing a two dimensional electron gas (2DEG) channel have a great potential for high speed device applications. Zinc oxide (ZnO), a semiconductor with a wide bandgap (3.4 eV) and high electron saturation velocity has gained a great deal of attention as an attractive material for high speed devices. Efficient gate modulation, however, requires high-quality Schottky contacts on the barrier layer. In this article, we present our Schottky diode fabrication procedure on Zn-polar BeMgZnO/ZnO heterostructure with high density 2DEG which is achieved through strain modulation and incorporation of a few percent Be into the MgZnO-based barrier during growth by molecular beam epitaxy (MBE). To achieve high crystalline quality, nearly lattice-matched high-resistivity GaN templates grown by metal-organic chemical vapor deposition (MOCVD) are used as the substrate for the subsequent MBE growth of the oxide layers. To obtain the requisite Zn-polarity, careful surface treatment of GaN templates and control over the VI/II ratio during the growth of low temperature ZnO nucleation layer are utilized. Ti/Au electrodes serve as Ohmic contacts, and Ag electrodes deposited on the O2 plasma pretreated BeMgZnO surface are used for Schottky contacts.

Attainment of high-quality Schottky contacts is imperative for achieving efficient gate modulation in heterostructure field effect transistors (HFETs). We present the fabrication methodology and characteristics of Schottky diodes on Zn-polar BeMgZnO/ZnO heterostructures with high-density two dimensional electron gas (2DEG), grown by plasma-assisted molecular beam epitaxy on GaN templates.

等离子体辅助分子束外延法制备的锌极性 BeMgZnO/氧化锌异质结构肖特基二极管的制备

Heterostructure field effect transistors (HFETs) utilizing a two dimensional electron gas (2DEG) channel have a great potential for high speed device ...

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors

Aluminum-oxide (Al2O3) is a low cost, easily processable and high dielectric constant insulating material that is particularly appropriate for use as the dielectric layer of thin-film transistors (TFTs). Growth of aluminum-oxide layers from anodization of metallic aluminum films is greatly advantageous when compared to sophisticated processes such as atomic layer deposition (ALD) or deposition methods that demand relatively high temperatures (above 300 &#176;C) such as aqueous combustion or spray-pyrolysis. However, the electrical properties of the transistors are highly dependent on the presence of defects and localized states at the semiconductor/dielectric interface, which are strongly affected by the manufacturing parameters of the anodized dielectric layer. To determine how several fabrication parameters influence the device performance without performing all possible combination of factors, we used a reduced factorial analysis based on a Plackett-Burman design of experiments (DOE). The choice of this DOE permits the use of only 12 experimental runs of combinations of factors (instead of all 256 possibilities) to obtain the optimized device performance. The ranking of the factors by the effect on device responses such as the TFT mobility is possible by applying analysis of variance (ANOVA) to the obtained results.

Anodization parameters for growth of the aluminum-oxide dielectric layer of zinc-oxide thin-film transistors (TFTs) are varied to determine the effects on the electrical parameter responses. Analysis of variance (ANOVA) is applied to a Plackett-Burman design of experiments (DOE) to determine the manufacturing conditions that result in optimized device performance.

阳极化参数对薄膜晶体管氧化铝介电层的影响

Aluminum-oxide (Al2O3) is a low cost, easily processable and high dielectric constant insulating material that is particularly appropriate for use as the ...

Metal Oxide Heterojunction for Photocatalytic Activities

There is a significant global demand for improvements in synthesis techniques and their optimal characteristics, especially for industrial-scale applications. Sol-gel-based solution combustion synthesis (SG-SCS) is a simple method to produce ordered porous materials. In this regard, Pearson&#39;s hard and soft acids and bases theory assists in selecting host-dopant reactivity to form a proper heterojunction.
The formation of a heterojunction also changes the essential properties of the materials, improving photocatalysis via charge transfer or synergistic activities. A calcination temperature of 500 &#176;C is ideal for this process based on the results of the stability assessment via a differential thermogravimetry ratio analysis (DTG).
The nanoscale dimensions of the nanoparticles (NPs) and nanocomposites (NCs) generated were validated using X-ray diffraction and high-resolution transmission electron microscopy (HRTEM). Furthermore, the scanning electron microscopy micrographs and BET analyses confirmed the porosity nature of the materials. HRTEM, X-ray photoelectron spectroscopy, and energy-dispersive X-ray investigations established the materials composition. The study found that NCs degraded the acid orange 8 (AO8) color more efficiently than bare ZnO.

The development of a heterojunction boosts the photocatalytic activities of solution combustion synthesis, which is a time-/energy-efficient process. Advanced analytical characterization techniques were used in this protocol to evaluate the materials&#39; characteristics, and nanocomposites demonstrated improved acid orange-8 dye degradation.

合成和高c轴ZnO薄膜等离子体的特性增强化学气相沉积系统及其紫外探测器的应用

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