이 작품은 재정적으로 과학 기술과 중국의 공화국의 국립 과학위원회 (계약 번호. NSC 101-2221-E-027-042과 NSC 101-2622-E-027-003-CC2)의 교육부의 지원되었다. DH 웨이 덕분에 박사 Shechtman 상에 대한 기술의 국립 대만 대학 (TAIPEI TECH) 상.

1. 기판 준비 및 청소 <ol><li> 시 (100) 웨이퍼에서 10mm X 10mm의 실리콘 기판을 잘라. </li><li> 10mm X 10mm의 유리 기판을 잘라. </li><li> 15 분 동안 이소프로판올를 10 분 동안 10 분, 알코올, 아세톤과 실리콘 기판과 유리를 청소, 초음파 세정기를 사용. </li><li> 탈 이온수 (DI) 물로 3 회 기판을 씻어. </li><li> - 불어 건조 질소 총을 가진 기판을. </li></ol> 2. DEZn 준비 및 보존 주 : 디 에틸 또한 DEZn 호출 (C 2 H 5) 2 Zn으로하면, 두 에틸기에 결합 아연 중심 이루어진 고도로 발화성 유기 아연 화합물이다. DEZn를 사용하면 혼자 작업하지 마십시오. DEZn 매우 독성 산소와 물에 민감, 물 근처 DEZn를 배치하지 않도록주의. 항상 보호 마스크와 보안경을 착용; 모든 절차는 후드에서 수행해야합니다. 가장 중요한 것은, 사용되지 않는 DEZn는 ㄴ합니다전자는 5 O를 C 환경에 저장된다. 참고 : DEZn의 첫 번째 사용을 위해, 2 단계 그렇지 않은 경우에 따라 3 단계에서 실험을 시작합니다. <ol><li> 병에서 30 ML의 DEZn를 끌어 후 강철 실린더에 넣은 비커에 주입하는 주사기를 사용합니다. </li><li> 반응 챔버와 강철 실린더를 연결하는 아연 도금 강철 파이프를 사용한다. </li><li> (6 토르) 진공 환경에서 철강 실린더를 펌프 기계 펌프와 볼 밸브를 사용합니다. 주 : DEZn 심각 산소와 반응하여,이를 진공 환경에서 유지되어야한다. </li><li> 5 O를 C 환경에서 사용되지 않는 DEZn를 저장합니다. </li></ol> 3. PECVD 챔버 및 준비 된 ZnO 박막의 합성 주 : 플라즈마 강화 화학 기상 증착의 개략도가도 1에 도시된다. <ol><li> 30mm에서 샤워 전극 및 샘플 단계 사이의 작동 거리를 설정합니다. </li> &lt;DEZn 입구에서 3cm 거리가있는 곳 리&gt; 적절한 위치에 반응 챔버의 샘플 무대에 기판을 놓습니다. </li><li> 로터리 펌프를 열고 서서히 게이트 밸브, 버터 플​​라이 밸브를 엽니 다. </li><li> 반응기 챔버의 배경 압력이 30 mTorr로보다 낮은 때까지 기다립니다. </li><li> 로터리 펌프에 연결하는 게이트 밸브, 버터 플​​라이 밸브를 닫습니다. </li><li> 이어서 3 X 10-6 토르의 고진공에 도달하는 터보 펌프와 상대 게이트 밸브를 연다. </li><li> 필요한 진공 상태에 도달 한 후, 상기 열 제어기를 열고 합성 온도로 샘플을 가열 스테이지 (200, 300, 400, 500, 및 다른 실험 파라미터 O 600 C). </li><li> 온도와 압력이 필요 조건에 도달하면, 터보 펌프를 닫고 동시에 로터리 펌프에 연결되는 게이트 밸브 및 버터 플​​라이 밸브를 연다. </li><li> 이어서, 가스 도입 밸브를 열어 아르곤 g를 켜동시에 유량 제어기 등. </li><li> 챔버 내로 아르곤 가스 (0.167 ㎖ / 초)를 흐른다. </li><li> 500 mTorr로에 챔버 압력을 설정합니다. </li><li> RF (13.56 메가 헤르츠) 발생기와 매칭 네트워크를 켠 후, 샘플을 15 분 동안 표면 퍼지 100 W의 RF 전력을 설정합니다. </li><li> 샘플 퍼지 종료 후, 70 W.까지 RF 전력을 켜 </li><li> 다음에, 이산화탄소 가스 컨트롤러와 가스 입구 밸브를 켜. </li><li> 챔버 내에 이산화탄소 (0.5 ㎖ / 초)를 흐른다. </li><li> 6 토르의 작동 압력을 설정합니다. </li><li> 챔버 압력은 6 토르에 도달 한 후, 동시에 DEZn 연결된 챔버 개방 볼 밸브로 (DEZn)을 디 에틸 행하는 캐리어 가스로서 고순도 아르곤 (0.167 ㎖ / 초)를 흐른다. 동시에, ZnO의 필름의 합성을 시작한다. </li><li> 5 분 동안의 ZnO 막의 플라즈마 합성을 계속한다. </li><li> 산화 아연 박막을 합성 한 후, 순차로이 RF 발생기, 볼 밸브, 열 콘을 해제콘트롤러와 가스 입구 밸브와 함께 가스 유량 제어기의 모든. </li><li> 샘플 단계의 온도가 실온까지 냉각 될 때 샘플을 가져 가라. 주 : 냉각 속도가 약 1.8 O C / 분이다. </li></ol> 합성 된 상태의 ZnO 박막 상에 맞물린 형상 패턴의 제조 4. 주 : 리소그래피 공정의 개략도가도 3에 도시되어있다. <ol><li> 10 분 동안 150 ℃로 합성 된 ZnO의 샘플을 굽는 핫 플레이트를 사용합니다. </li><li> 스핀 코터에 샘플을 놓고, 다음의 ZnO 샘플 상에 100 μL와 포토 레지스트의 액체 용액 (S1813)를 분배. </li><li> 10 초 동안 800 rpm에서 스핀 코터를 실행 한 후 균일 한 박막을 생산하기 위해 30 초 동안 3,000 rpm으로 가속화 할 수 있습니다. </li><li> 부드러운 빵을 90 초 동안 105 ℃로 포토 레지스트 코팅 된 ZnO 샘플. </li><li> 소프트 베이크 한 후, 포토 레지스트 - 코팅 된 샘플을 덮지 노출하는 UV 광을 사용하여마스크 얼 라이너에 의해 포토 마스크를 GH. 노출 시간은 2 초이며, 전력은 400 (W)이다 주 :. 포토 마스크의 패턴 인 폭 0.03 mm 길이 4mm (14쌍) 및도 2에 도시 된 바와 같이 0.15 mm의 전극 간 간격을 갖는, 물리는 형상으로 설계은 주목할 가치가 그 총 감광 지역은 검출기 84.32 mm의 2입니다. </li><li> 노광 과정을 거친 후, 핀셋은 시료를 클립하고, 그 후 희석하여 현상액에 담가 35 (S)가 개발 한 샘플을 수득하는 좌우로 요동 동작을 통해 (현상 제의 50 ㎖ 및 탈 이온수 150 ㎖를 혼합). </li><li> 질소 가스로 개발 된 탈 이온수 샘플과 건조를 씻어. </li><li> 그대로 패턴을 확인하기 위해 광학 현미경을 사용합니다. 그렇지 않은 경우, 포토 레지스트를 제거하는 아세톤을 사용하여 완벽한 패턴을 얻을 때까지 반복 4.7 4.2 단계를 반복합니다. </li><li> 하드 20 분 동안 120 ℃로 샘플을 굽는다. </li></ol><ol><li> 화학적 리프트 오프 절차를 진행하기 전에 샘플 개발의 위에 도전성 박막의 Pt 층 (100 nm의)을 증착하기 위해 RF 마그네트론 스퍼터링 시스템을 사용한다. </li><li> 13mm에서 타겟과 기판 사이의 거리를 설정합니다. </li><li> 5 mTorr로의 거친 진공에 도달하기 위해 기계 펌프를 사용합니다. </li><li> 다음으로, 7 × 10-7 Torr의 고진공을 얻기 위해 터보 펌프를 사용한다. </li><li> 챔버는 높은 진공에 도달 할 때까지 잠깐, 터보 펌프를 닫고 이후 기계식 펌프를 엽니 다. </li><li> 100 mTorr 이하의 작동 압력에 도달 할 때까지 챔버 압력 매스 플로우 콘트롤러에 의해 챔버에 0.3 ㎖ / sec의 아르곤 가스 유량. </li><li> 직류 (DC)를 켜고 전원을 방전하고 25 분 동안 샘플에 백금 박막 전극을 스퍼터링 15 W에서 DC 전력을 설정. </li><li> 백금 전극층 마그네트론 sputt 의해 증착 된 후에방법 거릴, 챔버에서 샘플을 가져 가라. </li><li> 포토 레지스트를 제거하기 위해 초음파 세정기로 화학적 리프트 오프 프로세스에 대한 아세톤에 액체 시료를 담그. </li><li> 철저 된 ZnO 박막에 깍지 같은 백금 전극을 포토 레지스트를 제거하고 얻기 위해 1 분에 청소 시간을 설정합니다. </li></ol> 6. RTA 처리 <ol><li> RTA 시스템에로 제작 된 백금 / ZnO의 샘플을 놓습니다. </li><li> 20 mTorr로에 RTA 챔버 압력을 펌프 기계 펌프와 게이트 밸브를 사용합니다. </li><li> 챔버 압력은 20 mTorr 이하에 도달 할 때까지 챔버에 0.3 ㎖ / sec로 아르곤 가스 흐름 5 토르의 작동 압력을 설정 기다려. </li><li> 다음에, 100의 C O / 분으로서 가열 속도를 설정한다. </li><li> 그 후, 10 분 동안 450 ℃로 샘플을 어닐링. </li><li> 어닐링 후, 샘플을 실온으로 냉각 될 때까지, 다음 샘플을 꺼내 기다립니다. </li></ol>

<ol>
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The authors declare that they have no competing financial interests.

중요한 단계 및 수정 1 단계에서 기판을 철저하게 청소하고 1.3 기판에는 기름이나 유기 및 무기 오염이 없다는 것을 확인하기 위해 다음 1.5 단계를해야합니다. 기판 표면상의 그리스 또는 유기 및 무기 오염은 상당히 막의 접착을 감소시킬 것이다. 단계 2의 ZnO 막 제조 공정 전에 가장 중요한 절차이다. DEZn은 매우 독성과 격렬하게 물과 반응하여 쉽게 공...

ZnO의 인해 이러한 RT 큰 여기자 높은 화학적 안정성, 저비용, 비 독성, 광학 펌핑 낮은 전력 임계 넓은 직접 밴드 갭 (3.37 eV의)와 같은 고유 특성에 유망한 와이드 밴드 갭 작용 성 반도체 물질 인 ~ 60 meV 인 1-2의 결합 에너지. 최근, ZnO를 박막은 투명 전도성 산화물 (TCO) 필름, 청색 발광 소자, 전계 효과 트랜지스터, 및 가스 센서 3-6 포함한 많은 응용 분야에서 사용되어왔다. 한편, ZnO의 인듐과 주석이 희귀하고 고가 인 때문에 인듐 주석 산화물 (ITO)을 대체 할 후보 물질이다. 또한, ZnO의 가시 파장 영역과 ITO 막 7-8에 비해 낮은 저항성에서 높은 광 투과율을 가지고있다. 따라서,의 ZnO의 제조, 특성 및 응용 프로그램이 광범위하게보고되고있다. 이 본 연구는 간단한에 의해 높은 C시킴으로써 행한다 (0002)의 ZnO 박막의 합성에 초점을 맞추고효과적인 방법 및 UV 광 검출기를 향해 그 실제 응용 d를. 최근의 연구 결과보고는 고품질의 ZnO 박막은 예컨대 졸 겔법, 무선 주파수 마그네트론 스퍼터링, 금속 유기 화학 기상 증착 (MOCVD) 등 9-14에서와 같은 다양한 기술에 의해 합성 될 수 있다는 것을 나타낸다. 각 기술의 장점과 단점을 갖는다. 예를 들어, 스퍼터 성막의 주요 장점은 매우 높은 융점과 그 대상 재료 여유롭게 기판 상에 스퍼터링되는 것이다. 대조적으로, 스퍼터링 법은 막 구조화 리프트 오프와 결합하는 것이 어렵다. 우리의 연구에서, 플라즈마 강화 화학 기상 증착 (PECVD) 시스템은 높은 품질의 C를 합성 된 ZnO 박막을 사용 하였다시킴으로써 행한다. 플라즈마 충돌은 얇은 막 밀도를 증가시키고, 이온 분해 반응 속도를 향상시킬 수있다 (15)의 합성 과정에 중요한 요소이다. 에또한, 높은 성장 속도와 대 면적의 균일 한 증착은 PECVD 법에 대한 다른 독특한 이점이다. 합성 기술을 제외하고, 기판 상에 양호한 접착 성이 고려되는 또 다른 문제이다. 사파이어의 ZnO와 같은 육방 격자 구조를 가지고 있기 때문에 많은 연구에서 C -plane 사파이어 널리 ZnO의 박막을 이동시킴으로써 행한다 높은 C를 합성하는 기질로서 사용되어왔다. 그러나, ZnO를는 거친 표면 형태 및 면내 방향 (16)으로 배향 된 ZnO 및 C -plane 사파이어 (18 %) 사이의 큰 격자 부적응으로 인한 높은 잔류 (결함 관련) 캐리어 농도를 나타내는 사파이어 기판 상에 합성 하였다. 사파이어 기판과 비교하여, Si 웨이퍼는 산화 아연 합성을위한 또 다른 널리 사용되는 기판이다. 실리콘 웨이퍼는 반도체 산업에 광범위하게 사용되어왔다; 따라서, 실리콘 기판에 고품질의 ZnO 박막의 성장은 neces 매우 중요하다세리. 불행히도, 및 Si와 ZnO의 결정 구조와 열팽창 계수가 결정 품질의 열화로 이어지는 분명히 다르다. 지난 10 년간 많은 노력의 ZnO 버퍼층 (17), 각종 가스 분위기 (18)에서 소둔하고, Si 기판 표면 (19)의 패시베이션을 포함하는 다양한 방법을 사용하여 실리콘 기판 상에 ZnO의 박막의 품질을 향상시키기 위해 이루어지고있다. 본 연구는 성공적으로 높은 C는 임의의 버퍼층 또는 전처리없이 실리콘 기판 상에 ZnO의 박막을 이동시킴으로써 행한다 합성하는 간단하고 효과적인 방법을 제공했다. 실험 결과는 최적의 성장 온도 하에서 합성 된 ZnO 박막 좋은 결정 및 광학 특성을 나타내었다 것으로 나타났다. 결정 구조, RF 플라즈마 조성, 표면 형태 및 된 ZnO 박막의 광학적 특성은 X 선 회절 (XRD), 광 방출 분광법 (OES), 전계 발광에 의해 조사 하였다 SC각각 Anning에 전자 현미경 (FE-SEM), 및 RT의 광 발광 (PL) 스펙트럼. 또한, ZnO의 박막의 투과율을 확인하고 또한보고되었다. 같은 합성 된 ZnO 박막은 자외선 광 검출기 응용 프로그램에 대한 감지 층이 또한 본 연구에서 조사되었다 역임했다. 자외선 광 검출기는 자외선 모니터링에 큰 잠재적 인 응용, 광 스위치, 불꽃 경보, 미사일 온난화 시스템 20-21있다. 이러한 오믹 접촉과 쇼트 키 콘택을 포함하여 양의 극한 음극 (PIN) 모드 및 금속 - 반도체 - 금속 (MSM) 구조로 수행 된 광 검출기의 많은 유형이있다. 각 유형은 자신의 장점과 단점이 있습니다. 현재, MSM 광 검출기 구조로 인해 반응성, 신뢰성, 대응 및 복구 시간을 22 ~ 24에서의 뛰어난 성능에 집중 관심을 받고있다. 여기 제시된 결과들은 MSM 오믹 접촉 모드가 채용되었다는 것을 보여 주었다의 ZnO 박막을 기반으로 자외선 광 검출기를 제조한다. 이러한 광 검출기의 종류는 일반적으로 높은 C는 ZnO의 박막을 UV 광 검출기에 대한 적절한 감지 층시킴으로써 행한다 것을 나타내는, 양호한 응답 성 및 안정성을 보여준다.

<table><tbody><tr><td>RF power supply</td><td>ADVANCED ENERGY</td><td>RFX-600</td><td></td></tr><tr><td>Butterfly valve</td><td>MKS</td><td>253B-1-40-1</td><td></td></tr><tr><td>Mass flow controller</td><td>PROTEC INSTRUMENTS</td><td>PC-540</td><td></td></tr><tr><td>Pressure controller</td><td>MKS</td><td>600 series&amp;nbsp;</td><td></td></tr><tr><td>Heater</td><td>UPGRADE INSTRUMENT CO.</td><td>UI-TC 3001</td><td></td></tr><tr><td>Sputter gun</td><td>AJA INTERNATIONAL</td><td>A320-HA</td><td></td></tr><tr><td>DEZn 1.5M</td><td>ACROS ORGANIC USA, New Jersey</td><td></td><td>also called Diethylzinc (C2H5)2Zn</td></tr><tr><td>Spin coater&amp;nbsp;</td><td>SWIENCO</td><td>PW - 490</td><td></td></tr><tr><td>I-V measurement</td><td>Keithley</td><td>Model: 2400</td><td></td></tr><tr><td>Photocondutive measurement&amp;nbsp;</td><td>Home-built</td><td></td><td></td></tr><tr><td>UV light sourse</td><td>Panasonic</td><td>ANUJ 6160</td><td></td></tr><tr><td>Mask aligner</td><td>Karl Suss</td><td>MJB4</td><td></td></tr><tr><td>Photoresist</td><td>Shipley a Rohm &amp;amp; Haas company</td><td>S1813</td><td></td></tr><tr><td>Developer</td><td>Shipley a Rohm &amp;amp; Haas company</td><td>MF319</td><td></td></tr><tr><td>Silicon wafer</td><td>E-Light Technology Inc</td><td>12/0801</td><td></td></tr><tr><td>Glass substrate</td><td>CORNING</td><td>1737</td><td>P-type / Boron</td></tr></tbody></table>

synthesis and characterization of high c-axis zno thin film by plasma enhanced chemical vapor deposition system and its uv photodetector application

본 연구에서는 높은 C시킴으로써 행한다 (0002) 우선 배향과 산화 아연 (ZnO)을 박막을 성공적으로 그리고 효과적으로 플라즈마 강화 화학 기상 증착 (PECVD) 시스템을 사용하여 다른 합성 온도로 실리콘 (Si) 기판 상에 합성되어왔다. 다른 합성 된 결정 구조에 온도, 표면 모폴로지와 광학적 특성의 영향이 조사되었다. X 선 회절 (XRD) 패턴 (0002)의 회절 피크의 강도가 400까지 증가 O C. 합성 온도 강해져 지적 (0002) 피크의 회절 강도는 점차적으로 약하게 400 O C. 초과까지 합성 온도 (10-10) 회절 피크의 출현과 함께 수반 된 RT의 광 발광 (PL) 스펙트럼 방출은 약 375 nm 내지 약 575 nm의 싶게에 위치한 무시할 깊은 수준 (DL) 방출에서 관찰 강한 가까운 밴드 에지 (NBE)을​​ 전시어 높은 C가 된 ZnO를 박막을 이동시킴으로써 행한다. 전계 방출 주사 전자 현미경 (FE-SEM) 화상이 균일 한 표면 및 작은 입자 크기 분포를 보여. ZnO의 박막은 투과율을 측정하기위한 동일한 파라미터 하에서 유리 기판 상에 합성되어왔다. 자외선 (UV) 검출기 애플리케이션의 목적을 위해, 깍지 Pt로 박막 (두께 ~ 100 나노 미터)는 종래의 광학 리소그래피 공정 및 무선 주파수 (RF) 마그네트론 스퍼터링 법을 통해 제조. 옴 접촉을 달성하기 위해, 장치는 10 분 동안 급속 열처리 (RTA) 시스템에 의해 450 ℃로 아르곤 환경에서 어닐링 하였다. 체계적인 측정 한 후, 전류 - 전압 (I는 - V) 사진 및 암전류와 시간 의존 광전류 응답 결과 곡선은 높은 C는 ZnO의 박막이 적합 감지 층시킴으로써 행한다 것을 나타내는, 양호한 응답 성 및 안정성을 나타내자외선 광 검출기 응용 프로그램.

ZnO의 (0002) (C)와 높은 박막을 성공적으로 PECVD 시스템을 이용하여 실리콘 기판 상에 바람직한 방향을 합성 한 이동시킴으로써 행한다. 이산화탄소 (CO 2)와 디 에틸 아연 (DEZn)는 각각 산소와 아연 전구체로 사용 하였다. 된 ZnO 박막의 결정 구조의 ZnO 박막은 강한 (0002)의 회절 피크와 400 ℃로 합성 한 것을 나타내는, X 선 회절 (도 4)에 의해 특성화되었다. 합성 온도?...

Watch this Scientific Journal Video about Synthesis and Characterization of High c-axis ZnO Thin Film by Plasma Enhanced Chemical Vapor Deposition System and its UV Photodetector Application at JoVE.c

Synthesis and Characterization of High c-axis ZnO Thin Film by Plasma Enhanced Chemical Vapor Deposition System and its UV Photodetector Application

We offered a method to directly synthesize high c-axis (0002) ZnO thin film by plasma enhanced chemical vapor deposition. The as-synthesized ZnO thin film combined with Pt interdigitated electrode was used as sensing layer for ultraviolet photodetector, showing a high performance through a combination of its good responsivity and reliability.

합성 및 플라즈마에 의해 높은 c 축 된 ZnO 박막의 특성은 화학 기상 증착 시스템과 자외선 광 검출기 응용 프로그램 강화

In this study, zinc oxide (ZnO) thin films with high c-axis (0002) preferential orientation have been successfully and effectively synthesized onto ...

synthesis-characterization-high-c-axis-zno-thin-film-plasma-enhanced

Universidad de Cartagena UDEC

Research

JoVE Journal

Engineering

15.2K 조회수.  National Taipei University of Technology (TAIPEI TECH). We offered a method to directly synthesize high c-axis (0002) ZnO thin film by plasma enhanced chemical vapor deposition. The as-synthesized ZnO thin film combined with Pt interdigitated electrode was used as sensing layer for ultraviolet photodetector, showing a high performance through a combination of its good responsivity and reliability.

비디오: Synthesis and Characterization of High c-axis ZnO Thin Film by Plasma Enhanced Chemical Vapor Deposition System and its UV Photodetector Application

Polycrystalline Silicon Thin-film Solar cells with Plasmonic-enhanced Light-trapping

One of major approaches to cheaper solar cells is reducing the amount of semiconductor material used for their fabrication and making cells thinner. To compensate for lower light absorption such physically thin devices have to incorporate light-trapping which increases their optical thickness. Light scattering by textured surfaces is a common technique but it cannot be universally applied to all solar cell technologies. Some cells, for example those made of evaporated silicon, are planar as produced and they require an alternative light-trapping means suitable for planar devices. Metal nanoparticles formed on planar silicon cell surface and capable of light scattering due to surface plasmon resonance is an effective approach.
The paper presents a fabrication procedure of evaporated polycrystalline silicon solar cells with plasmonic light-trapping and demonstrates how the cell quantum efficiency improves due to presence of metal nanoparticles.
To fabricate the cells a film consisting of alternative boron and phosphorous doped silicon layers is deposited on glass substrate by electron beam evaporation. An Initially amorphous film is crystallised and electronic defects are mitigated by annealing and hydrogen passivation. Metal grid contacts are applied to the layers of opposite polarity to extract electricity generated by the cell. Typically, such a ~2 &mu;m thick cell has a short-circuit current density (Jsc) of 14-16 mA/cm2, which can be increased up to 17-18 mA/cm2 (~25% higher) after application of a simple diffuse back reflector made of a white paint.
To implement plasmonic light-trapping a silver nanoparticle array is formed on the metallised cell silicon surface. A precursor silver film is deposited on the cell by thermal evaporation and annealed at 23&deg;C to form silver nanoparticles. Nanoparticle size and coverage, which affect plasmonic light-scattering, can be tuned for enhanced cell performance by varying the precursor film thickness and its annealing conditions. An optimised nanoparticle array alone results in cell Jsc enhancement of about 28%, similar to the effect of the diffuse reflector. The photocurrent can be further increased by coating the nanoparticles by a low refractive index dielectric, like MgF2, and applying the diffused reflector. The complete plasmonic cell structure comprises the polycrystalline silicon film, a silver nanoparticle array, a layer of MgF2, and a diffuse reflector. The Jsc for such cell is 21-23 mA/cm2, up to 45% higher than Jsc of the original cell without light-trapping or ~25% higher than Jsc for the cell with the diffuse reflector only.
Introduction
Light-trapping in silicon solar cells is commonly achieved via light scattering at textured interfaces. Scattered light travels through a cell at oblique angles for a longer distance and when such angles exceed the critical angle at the cell interfaces the light is permanently trapped in the cell by total internal reflection (Animation 1: Light-trapping). Although this scheme works well for most solar cells, there are developing technologies where ultra-thin Si layers are produced planar (e.g. layer-transfer technologies and epitaxial c-Si layers) 1 and or when such layers are not compatible with textures substrates (e.g. evaporated silicon) 2. For such originally planar Si layer alternative light trapping approaches, such as diffuse white paint reflector 3, silicon plasma texturing 4 or high refractive index nanoparticle reflector 5 have been suggested.
Metal nanoparticles can effectively scatter incident light into a higher refractive index material, like silicon, due to the surface plasmon resonance effect 6. They also can be easily formed on the planar silicon cell surface thus offering a light-trapping approach alternative to texturing. For a nanoparticle located at the air-silicon interface the scattered light fraction coupled into silicon exceeds 95% and a large faction of that light is scattered at angles above critical providing nearly ideal light-trapping condition (Animation 2: Plasmons on NP). The resonance can be tuned to the wavelength region, which is most important for a particular cell material and design, by varying the nanoparticle average size, surface coverage and local dielectric environment 6,7. Theoretical design principles of plasmonic nanoparticle solar cells have been suggested 8. In practice, Ag nanoparticle array is an ideal light-trapping partner for poly-Si thin-film solar cells because most of these design principle are naturally met. The simplest way of forming nanoparticles by thermal annealing of a thin precursor Ag film results in a random array with a relatively wide size and shape distribution, which is particularly suitable for light-trapping because such an array has a wide resonance peak, covering the wavelength range of 700-900 nm, important for poly-Si solar cell performance. The nanoparticle array can only be located on the rear poly-Si cell surface thus avoiding destructive interference between incident and scattered light which occurs for front-located nanoparticles 9. Moreover, poly-Si thin-film cells do not requires a passivating layer and the flat base-shaped nanoparticles (that naturally result from thermal annealing of a metal film) can be directly placed on silicon further increases plasmonic scattering efficiency due to surface plasmon-polariton resonance 10.
The cell with the plasmonic nanoparticle array as described above can have a photocurrent about 28% higher than the original cell. However, the array still transmits a significant amount of light which escapes through the rear of the cell and does not contribute into the current. This loss can be mitigated by adding a rear reflector to allow catching transmitted light and re-directing it back to the cell. Providing sufficient distance between the reflector and the nanoparticles (a few hundred nanometers) the reflected light will then experience one more plasmonic scattering event while passing through the nanoparticle array on re-entering the cell and the reflector itself can be made diffuse - both effects further facilitating light scattering and hence light-trapping. Importantly, the Ag nanoparticles have to be encapsulated with an inert and low refractive index dielectric, like MgF2 or SiO2, from the rear reflector to avoid mechanical and chemical damage 7. Low refractive index for this cladding layer is required to maintain a high coupling fraction into silicon and larger scattering angles, which are ensured by the high optical contrast between the media on both sides of the nanoparticle, silicon and dielectric 6. The photocurrent of the plasmonic cell with the diffuse rear reflector can be up to 45% higher than the current of the original cell or up to 25% higher than the current of an equivalent cell with the diffuse reflector only.

Polycrystalline silicon thin-film solar cells on glass are fabricated by deposition of boron and phosphorous doped silicon layers followed by crystallisation, defect passivation and metallisation. Plasmonic light-trapping is introduced by forming Ag nanoparticles on the silicon cell surface capped with a diffused reflector resulting in ~45% photocurrent enhancement.

Plasmonic 강화된 라이트 - 트래핑과 다결정 실리콘 박막 태양 전지

One of major approaches to cheaper solar cells is reducing the amount of semiconductor material used for their fabrication and making cells thinner. To ...

연구

공학

Fabrication of Nano-engineered Transparent Conducting Oxides by Pulsed Laser Deposition

Nanosecond Pulsed Laser Deposition (PLD) in the presence of a background gas allows the deposition of metal oxides with tunable morphology, structure, density and stoichiometry by a proper control of the plasma plume expansion dynamics. Such versatility can be exploited to produce nanostructured films from compact and dense to nanoporous characterized by a hierarchical assembly of nano-sized clusters. In particular we describe the detailed methodology to fabricate two types of Al-doped ZnO (AZO) films as transparent electrodes in photovoltaic devices: 1) at low O2 pressure, compact films with electrical conductivity and optical transparency close to the state of the art transparent conducting oxides (TCO) can be deposited at room temperature, to be compatible with thermally sensitive materials such as polymers used in organic photovoltaics (OPVs); 2) highly light scattering hierarchical structures resembling a forest of nano-trees are produced at higher pressures. Such structures show high Haze factor (&gt;80%) and may be exploited to enhance the light trapping capability. The method here described for AZO films can be applied to other metal oxides relevant for technological applications such as TiO2, Al2O3, WO3 and Ag4O4.

We describe the experimental method to deposit nanostructured oxide thin films by nanosecond Pulsed Laser Deposition (PLD) in the presence of a background gas. By using this method Al-doped ZnO (AZO) films, from compact to hierarchically structured as nano-tree forests, can be deposited.

의 제작 펄스 레이저 증착에 의해 투명 실시 산화물 나노 설계

Nanosecond Pulsed  Laser Deposition (PLD) in the presence of a background gas allows the deposition  of metal oxides with tunable morphology, structure, ...

Preparation and Use of Photocatalytically Active Segmented Ag|ZnO and Coaxial TiO2-Ag Nanowires Made by Templated Electrodeposition

Photocatalytically active nanostructures require a large specific surface area with the presence of many catalytically active sites for the oxidation and reduction half reactions, and fast electron (hole) diffusion and charge separation. Nanowires present suitable architectures to meet these requirements. Axially segmented Ag|ZnO and radially segmented (coaxial) TiO2-Ag nanowires with a diameter of 200 nm and a length of 6-20 &#181;m were made by templated electrodeposition within the pores of polycarbonate track-etched (PCTE) or anodized aluminum oxide (AAO) membranes, respectively. In the photocatalytic experiments, the ZnO and TiO2 phases acted as photoanodes, and Ag as cathode. No external circuit is needed to connect both electrodes, which is a key advantage over conventional photo-electrochemical cells. For making segmented Ag|ZnO nanowires, the Ag salt electrolyte was replaced after formation of the Ag segment to form a ZnO segment attached to the Ag segment. For making coaxial TiO2-Ag nanowires, a TiO2 gel was first formed by the electrochemically induced sol-gel method. Drying and thermal annealing of the as-formed TiO2 gel resulted in the formation of crystalline TiO2 nanotubes. A subsequent Ag electrodeposition step inside the TiO2 nanotubes resulted in formation of coaxial TiO2-Ag nanowires. Due to the combination of an n-type semiconductor (ZnO or TiO2) and a metal (Ag) within the same nanowire, a Schottky barrier was created at the interface between the phases. To demonstrate the photocatalytic activity of these nanowires, the Ag|ZnO nanowires were used in a photocatalytic experiment in which H2 gas was detected upon UV illumination of the nanowires dispersed in a methanol/water mixture. After 17 min&#160;of illumination, approximately 0.2 vol% H2 gas was detected from a suspension of ~0.1 g of Ag|ZnO nanowires in a 50 ml 80 vol% aqueous methanol solution.

Preparation and Use of Photocatalytically Active Segmented Ag|ZnO and Coaxial TiO2-Ag Nanowires Made by Templated Electrodeposition

Procedures are outlined to prepare segmented and coaxial nanowires via templated electrodeposition in nanopores. As examples, segmented nanowires consisting of Ag and ZnO segments, and coaxial nanowires consisting of a TiO2 shell and a Ag core were made. The nanowires were used in photocatalytic hydrogen formation experiments.

준비 및 광촉매 활성 분단 자세의 사용 | ZnO의 동축 티오<sub&gt; 2</sub템플릿 기반 전착에 의해 만들어진&gt; - 자세 나노 와이어

Photocatalytically active nanostructures require a large specific surface area with the presence of many catalytically active sites for the oxidation and ...

Improved Heterojunction Quality in Cu2O-based Solar Cells Through the Optimization of Atmospheric Pressure Spatial Atomic Layer Deposited Zn1-xMgxO

Atmospheric pressure spatial atomic layer deposition (AP-SALD) was used to deposit n-type ZnO and Zn1-xMgxO thin films onto p-type thermally oxidized Cu2O substrates outside vacuum at low temperature. The performance of photovoltaic devices featuring atmospherically fabricated ZnO/Cu2O heterojunction was dependent on the conditions of AP-SALD film deposition, namely, the substrate temperature and deposition time, as well as on the Cu2O substrate exposure to oxidizing agents prior to and during the ZnO deposition. Superficial Cu2O to CuO oxidation was identified as a limiting factor to heterojunction quality due to recombination at the ZnO/Cu2O interface. Optimization of AP-SALD conditions as well as keeping Cu2O away from air and moisture in order to minimize Cu2O surface oxidation led to improved device performance. A three-fold increase in the open-circuit voltage (up to 0.65 V) and a two-fold increase in the short-circuit current density produced solar cells with a record 2.2% power conversion efficiency (PCE). This PCE is the highest reported for a Zn1-xMgxO/Cu2O heterojunction formed outside vacuum, which highlights atmospheric pressure spatial ALD as a promising technique for inexpensive and scalable fabrication of Cu2O-based photovoltaics.

Improved Heterojunction Quality in Cu2O-based Solar Cells Through the Optimization of Atmospheric Pressure Spatial Atomic Layer Deposited Zn1-xMgxO

Here we present a protocol for synthesizing Zn1-xMgxO/Cu2O heterojunctions in open-air at low temperature via atmospheric pressure spatial atomic layer deposition (AP-SALD) of Zn1-xMgxO on cuprous oxide. Such high quality conformal metal oxides can be grown on a variety of substrates including plastics by this cheap and scalable method.

구리에서 개선 된 이종 접합 품질<sub&gt; 2</sub&gt; 입금 대기 압력 공간 원자 층의 최적화를 통해 태양 전지를 O 기반<br /&gt; 아연<sub&gt; 1-X</sub&gt; 마그네슘<sub&gt; X</sub&gt; O

Atmospheric pressure spatial atomic layer deposition (AP-SALD) was used to deposit n-type ZnO and Zn1-xMgxO thin films onto p-type thermally oxidized Cu2O ...

화학

Synthesis of Hierarchical ZnO/CdSSe Heterostructure Nanotrees

A two-step chemical vapor deposition procedure is here employed to prepare tree-like hierarchical ZnO/CdSSe hetero-nanostructures. The structures are composed of CdSSe branches grown on ZnO nanowires that are vertically aligned on a transparent sapphire substrate. The morphology was measured via scanning electron microscopy. The crystal structure was determined by X-ray powder diffraction analysis. Both the ZnO stem and CdSSe branches have a predominantly wurtzite crystal structure. The mole ratio of S and Se in the CdSSe branches was measured by energy dispersive X-ray spectroscopy. The CdSSe branches result in strong visible light absorption. Photoluminescence (PL) spectroscopy showed that the stem and branches form a type-II heterojunction. PL lifetime measurements showed a decrease in the lifetime of emission from the trees when compared to emission from individual ZnO stems or CdSSe branches and indicate fast charge transfer between CdSSe and ZnO. The vertically aligned ZnO stems provide a direct electron transport pathway to the substrate and allow for efficient charge separation after photoexcitation by visible light. The combination of the abovementioned properties makes ZnO/CdSSe nanotrees promising candidates for applications in solar cells, photocatalysis, and opto-electronic devices.

Here, we prepare and characterize novel tree-like hierarchical ZnO/CdSSe nanostructures, where CdSSe branches are grown on vertically aligned ZnO nanowires. The resulting nanotrees are a potential material for solar energy conversion and other opto-electronic devices.

계층의 ZnO / CdSSe 헤테로 Nanotrees의 합성

A two-step chemical vapor deposition procedure is here employed to prepare tree-like hierarchical ZnO/CdSSe hetero-nanostructures. The structures are ...

Aerosol-assisted Chemical Vapor Deposition of Metal Oxide Structures: Zinc Oxide Rods

Whilst columnar zinc oxide (ZnO) structures in the form of rods or wires have been synthesized previously by different liquid- or vapor-phase routes, their high cost production and/or incompatibility with microfabrication technologies, due to the use of pre-deposited catalyst-seeds and/or high processing temperatures exceeding 900 &#176;C, represent a drawback for a widespread use of these methods. Here, however, we report the synthesis of ZnO rods via a non-catalyzed vapor-solid mechanism enabled by using an aerosol-assisted chemical vapor deposition (CVD) method at 400 &#176;C with zinc chloride (ZnCl2) as the precursor and ethanol as the carrier solvent. This method provides both single-step formation of ZnO rods and the possibility of their direct integration with various substrate types, including silicon, silicon-based micromachined platforms, quartz, or high heat resistant polymers. This potentially facilitates the use of this method at a large-scale, due to its compatibility with state-of-the-art microfabrication processes for device manufacture. This report also describes the properties of these structures (e.g., morphology, crystalline phase, optical band gap, chemical composition, electrical resistance) and validates its gas sensing functionality towards carbon monoxide.

Columnar zinc oxide structures in the form of rods are synthesized via aerosol-assisted chemical vapor deposition without the use of pre-deposited catalyst-seed particles. This method is scalable and compatible with various substrates based on either silicon, quartz or polymers.

에 어로 졸 기반 구조 금속 산화물의 화학 증기 증 착: 산화 아연 막대

Whilst columnar zinc oxide (ZnO) structures in the form of rods or wires have been synthesized previously by different liquid- or vapor-phase routes, ...

Well-aligned Vertically Oriented ZnO Nanorod Arrays and their Application in Inverted Small Molecule Solar Cells

This manuscript describes how to design and fabricate efficient inverted solar cells, which are based on a two-dimensional conjugated small molecule (SMPV1) and [6,6]-phenyl-C71-butyric acid methyl ester (PC71BM), by utilizing ZnO nanorods (NRs) grown on a high quality Al-doped ZnO (AZO) seed layer. The inverted SMPV1:PC71BM solar cells with ZnO NRs that grew on both a sputtered and sol-gel processed AZO seed layer are fabricated. Compared with the AZO thin film prepared by the sol-gel method, the sputtered AZO thin film exhibits better crystallization and lower surface roughness, according to X-ray diffraction (XRD) and atomic force microscope (AFM) measurements. The orientation of the ZnO NRs grown on a sputtered AZO seed layer shows better vertical alignment, which is beneficial for the deposition of the subsequent active layer, forming better surface morphologies. Generally, the surface morphology of the active layer mainly dominates the fill factor (FF) of the devices. Consequently, the well-aligned ZnO NRs can be used to improve the carrier collection of the active layer and to increase the FF of the solar cells. Moreover, as an anti-reflection structure, it can also be utilized to enhance the light harvesting of the absorption layer, with the power conversion efficiency (PCE) of solar cells reaching 6.01%, higher than the sol-gel based solar cells with an efficiency of 4.74%.

This manuscript describes how to design and fabricate efficient inverted SMPV1:PC71BM solar cells with ZnO nanorods (NRs) grown on a high quality Al-doped ZnO (AZO) seed layer. The well-aligned vertically oriented ZnO NRs exhibit high crystalline properties. The power conversion efficiency of solar cells can reach 6.01%.

잘 정렬 된 수직 지향 ZnO Nanorod 배열 및 그들의 응용 프로그램에서 반전 된 작은 분자 태양 전지

This manuscript describes how to design and fabricate efficient inverted solar cells, which are based on a two-dimensional conjugated small molecule ...

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Heterostructure field effect transistors (HFETs) utilizing a two dimensional electron gas (2DEG) channel have a great potential for high speed device applications. Zinc oxide (ZnO), a semiconductor with a wide bandgap (3.4 eV) and high electron saturation velocity has gained a great deal of attention as an attractive material for high speed devices. Efficient gate modulation, however, requires high-quality Schottky contacts on the barrier layer. In this article, we present our Schottky diode fabrication procedure on Zn-polar BeMgZnO/ZnO heterostructure with high density 2DEG which is achieved through strain modulation and incorporation of a few percent Be into the MgZnO-based barrier during growth by molecular beam epitaxy (MBE). To achieve high crystalline quality, nearly lattice-matched high-resistivity GaN templates grown by metal-organic chemical vapor deposition (MOCVD) are used as the substrate for the subsequent MBE growth of the oxide layers. To obtain the requisite Zn-polarity, careful surface treatment of GaN templates and control over the VI/II ratio during the growth of low temperature ZnO nucleation layer are utilized. Ti/Au electrodes serve as Ohmic contacts, and Ag electrodes deposited on the O2 plasma pretreated BeMgZnO surface are used for Schottky contacts.

Attainment of high-quality Schottky contacts is imperative for achieving efficient gate modulation in heterostructure field effect transistors (HFETs). We present the fabrication methodology and characteristics of Schottky diodes on Zn-polar BeMgZnO/ZnO heterostructures with high-density two dimensional electron gas (2DEG), grown by plasma-assisted molecular beam epitaxy on GaN templates.

Heterostructure field effect transistors (HFETs) utilizing a two dimensional electron gas (2DEG) channel have a great potential for high speed device ...

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors

Aluminum-oxide (Al2O3) is a low cost, easily processable and high dielectric constant insulating material that is particularly appropriate for use as the dielectric layer of thin-film transistors (TFTs). Growth of aluminum-oxide layers from anodization of metallic aluminum films is greatly advantageous when compared to sophisticated processes such as atomic layer deposition (ALD) or deposition methods that demand relatively high temperatures (above 300 &#176;C) such as aqueous combustion or spray-pyrolysis. However, the electrical properties of the transistors are highly dependent on the presence of defects and localized states at the semiconductor/dielectric interface, which are strongly affected by the manufacturing parameters of the anodized dielectric layer. To determine how several fabrication parameters influence the device performance without performing all possible combination of factors, we used a reduced factorial analysis based on a Plackett-Burman design of experiments (DOE). The choice of this DOE permits the use of only 12 experimental runs of combinations of factors (instead of all 256 possibilities) to obtain the optimized device performance. The ranking of the factors by the effect on device responses such as the TFT mobility is possible by applying analysis of variance (ANOVA) to the obtained results.

Anodization parameters for growth of the aluminum-oxide dielectric layer of zinc-oxide thin-film transistors (TFTs) are varied to determine the effects on the electrical parameter responses. Analysis of variance (ANOVA) is applied to a Plackett-Burman design of experiments (DOE) to determine the manufacturing conditions that result in optimized device performance.

박막 트랜지스터의 알루미늄 산화물 유전체 층에 대한 양극 산화 매개변수의 영향

Aluminum-oxide (Al2O3) is a low cost, easily processable and high dielectric constant insulating material that is particularly appropriate for use as the ...

Metal Oxide Heterojunction for Photocatalytic Activities

There is a significant global demand for improvements in synthesis techniques and their optimal characteristics, especially for industrial-scale applications. Sol-gel-based solution combustion synthesis (SG-SCS) is a simple method to produce ordered porous materials. In this regard, Pearson&#39;s hard and soft acids and bases theory assists in selecting host-dopant reactivity to form a proper heterojunction.
The formation of a heterojunction also changes the essential properties of the materials, improving photocatalysis via charge transfer or synergistic activities. A calcination temperature of 500 &#176;C is ideal for this process based on the results of the stability assessment via a differential thermogravimetry ratio analysis (DTG).
The nanoscale dimensions of the nanoparticles (NPs) and nanocomposites (NCs) generated were validated using X-ray diffraction and high-resolution transmission electron microscopy (HRTEM). Furthermore, the scanning electron microscopy micrographs and BET analyses confirmed the porosity nature of the materials. HRTEM, X-ray photoelectron spectroscopy, and energy-dispersive X-ray investigations established the materials composition. The study found that NCs degraded the acid orange 8 (AO8) color more efficiently than bare ZnO.

The development of a heterojunction boosts the photocatalytic activities of solution combustion synthesis, which is a time-/energy-efficient process. Advanced analytical characterization techniques were used in this protocol to evaluate the materials&#39; characteristics, and nanocomposites demonstrated improved acid orange-8 dye degradation.

합성 및 플라즈마에 의해 높은 c 축 된 ZnO 박막의 특성은 화학 기상 증착 시스템과 자외선 광 검출기 응용 프로그램 강화

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