Name: synthesis and characterization of high c-axis zno thin film by plasma enhanced chemical vapor deposition system and its uv photodetector application
Uploaded: 2015-10-03T14:00:00.000+00:00
Duration: 8 min 18 s
Description: Watch this Scientific Journal Video about Synthesis and Characterization of High c-axis ZnO Thin Film by Plasma Enhanced Chemical Vapor Deposition System and its UV Photodetector Application at JoVE.c

Bu çalışma mali Bilim ve Teknoloji ve Çin Cumhuriyeti Ulusal Bilim Konseyi (sözleşme nos. NSC 101-2221-E-027-042 ve MGK 101-2622-E-027-003-CC2) Bakanlığı tarafından desteklenen edildi. DH Wei teşekkür Dr. Shechtman Ödülü Ulusal Teknoloji Taipei Üniversitesi (TAIPEI TECH) Ödül.

1. Yüzey Hazırlama ve Temizlik <ol><li> Si (100) gofret 10 mm x 10 mm, silikon alt tabakalar kesin. </li><li> 10 mm x 10 mm ebadındaki bir cam alt tabakaların kesin. </li><li> 15 dakika boyunca izopropanol daha sonra 10 dakika için 10 dakika, alkol aseton silikon ve cam yüzeylerin temizlenmesi için ultrasonik temizleyici kullanın ve. </li><li> Deiyonize (Di) su ile üç kez alt-tabakaların durulayın. </li><li> -Üfleyin kurutmak nitrojen tabanca ile yüzeyler. </li></ol> 2. DEZn Hazırlama ve Koruma Not: dietilçinko da DEZn adlandırılan (Cı 2H 5) 2, Zn, iki etil grubu ile bağlı olan bir çinko merkezi oluşan yüksek piroforik organo çinko bileşiğidir. DEZn kullanırken yalnız çalışmak asla. DEZn çok zehirli ve oksijen ve suya duyarlı, suya yakın DEZn yere değil emin olun. Daima koruyucu maske ve koruyucu gözlük takın; Tüm prosedürler kaputu gerçekleştirilmelidir. Daha da önemlisi, kullanılmayan DEZn gerekir be 5 o C ortamda saklanır. Not: DEZn ilk kullanım için, adım 2&#39;de değilse izleyin adım 3 denemeyi başlatın. <ol><li> Şişeden 30 ml DEZn çizmek ve daha sonra bir çelik silindir yerleştirilen bir beher içine enjekte şırınga kullanın. </li><li> Reaksiyon odası ile çelik silindir bağlamak için galvanizli demir boru kullanın. </li><li> (6 Torr) vakum ortamında çelik silindir aşağı pompalamak için mekanik pompası ve küresel vana kullanın. Not: DEZn ölçüde oksijen ile reaksiyona girer, bu vakum ortamında muhafaza edilmelidir. </li><li> 5 o C ortamında kullanılmayan DEZn saklayın. </li></ol> 3. PECVD Odası Hazırlama ve ZnO İnce Filmlerin Sentezi Not: plazma destekli kimyasal buhar biriktirme şematik diyagramıdır, Şekil 1 &#39;de gösterilmiştir. <ol><li> 30 mm duş elektrot ve numune aşamasında arasındaki çalışma uzaklığını ayarlayın. </li> &lt;DEZn girişten 3 cm&#39;lik bir mesafe olduğu yerde li&gt; uygun bir yere reaksiyon odasının örnek sahnede yüzeyler yerleştirin. </li><li> Döner pompayı açın ve yavaş yavaş sürgülü vanalar ve kelebek vana açın. </li><li> Reaktör odasının arka basıncı 30 mTor daha düşük olana kadar bekleyin. </li><li> Döner pompaya bağlanır sürgülü vana ve kelebek vana, kapatın. </li><li> Sonra 3 x 10 -6 Torr yüksek vakum ulaşmak için turbo pompa ve bağıl sürgülü vanalar açılır. </li><li> Gerekli vakum koşulları ulaştıktan sonra, ısı kontrolörü açmak ve sentez sıcaklığına örnek sahne ısı (200, 300, 400, 500, ve farklı deney parametreleri için 600 ° C). </li><li> Sıcaklık ve basınç gerekli koşul ulaştığınızda, turbo pompası kapatın ve sonra aynı anda döner pompa bağlanır sürgülü vana ve kelebek vana açın. </li><li> Sonra, gaz giriş vanalarını açıp argon g açınAynı anda akış kontrolörü olarak. </li><li> Odasına Argon gazı (0.167 ml / sn) akış. </li><li> 500 mTor için kamara basıncını ayarlayın. </li><li> RF (13.56 MHz) jeneratör ve eşleşen ağ üzerinde açın, daha sonra numuneler 15 dakika yüzey temizleme için 100 W RF gücü ayarlayın. </li><li> Numunelerin tasfiye bitirdikten sonra, 70 W aşağı RF gücü yeniden açın </li><li> Sonra, karbon dioksit gazı kontrolörü ve gaz giriş valfi açın. </li><li> Bölme içine karbon dioksitin (0,5 ml / sn) akış. </li><li> 6 Torr&#39;da çalışma basıncını ayarlar. </li><li> Odacık basıncı 6 Torr&#39;a ulaştıktan sonra, aynı anda DEZn bağlı bölme ve açık küresel vana içerisine (DEZn) dietilçinko gerçekleştirmek için taşıyıcı gaz olarak yüksek saf argon (0.167 ml / sn) akar. Aynı zamanda, ZnO filmler sentezi başlar. </li><li> 5 dakika boyunca ZnO filmler plazma sentezi devam edin. </li><li> ZnO filmleri sentezlenmiş edildikten sonra, seriatim RF jeneratörü, küresel vana, ısı con kapatmaktroller ve gaz giriş vanaları ile birlikte gaz akış kontrolörleri tüm. </li><li> Numune sahne sıcaklığı oda sıcaklığına soğuduktan zaman numune dışarı atın. Not: soğutma hızı yaklaşık 1.8 ° C / dk. </li></ol> As-sentezlenmiş ZnO İnce Film üzerine interdijite benzeri Pattern 4. Hazırlık Not: litografi işleminin şeması, Şekil 3&#39;te gösterilmektedir. <ol><li> 10 dakika boyunca 150 o C&#39;de olduğu gibi sentezlenmiş ZnO örneği pişirmeye sıcak bir tabak kullanın. </li><li> Spin kaplayıcı üzerinde örnek yerleştirin ve sonra ZnO numune üzerine 100 ul Fotorezist sıvı solüsyonun (S1813) dağıtmak. </li><li> 10 saniye süre ile 800 rpm&#39;de santrifüj kaplama cihazı çalıştırmak ve daha sonra bir homojen ince bir tabaka oluşturmak için 30 saniye boyunca 3000 rpm hızlandırır. </li><li> Yumuşak fırında 90 saniye boyunca 105 o C&#39;de fotodirenç kaplı ZnO örneği. </li><li> Yumuşak Pişirme sonrasında photoresist kaplı numune pantolonunu duyurmak için UV ışığı kullanınMaske hizalama tarafından bir fotomaske gh. Pozlama süresi 2 sn ve güç 400 W. Not:. Photomask kalıptır, geniş 0,03 mm ve uzun 4 mm (14 çift) ve Şekil 2 &#39;de gösterildiği üzere 0.15 mm arası bir elektrot aralığı olan, birbirine kenetlenmiş benzeri olarak tasarlanmıştır Bu kayda değer olduğu toplam ışığa alan detektörü için 84,32 mm 2 &#39;dir. </li><li> Pozlama işleminden sonra, kullanım cımbız örneği klibi, ardından seyreltilmiş geliştirici içine batırmayın 35 s geliştirilen örnek almak için yanlara sallanan eylemleri yoluyla (geliştirici 50 ml deiyonize su 150 ml mix). </li><li> Azot gazı ile geliştirilen DI su ile örnek ve kuru durulayın. </li><li> Sağlam desen kontrol etmek için optik mikroskop kullanın. Değilse, ışığa çıkarmak için aseton kullanmak ve mükemmel desen elde edilene kadar tekrar 4.7 4.2 adımları tekrarlayın. </li><li> Sert 20 dakika süreyle 120 o C&#39;de örneği pişirin. </li></ol><ol><li> Kimyasal asansör-off prosedüre geçmeden önce geliştirilen numune üstünde ince bir iletken Pt tabaka (100 nm) yatırmak için RF magnetron püskürtme sistemini kullanın. </li><li> 13 mm hedef ve alt tabaka arasındaki mesafeyi ayarlayın. </li><li> 5 mTor kaba vakum ulaşmak için mekanik pompa kullanın. </li><li> Ardından, 7 x 10 -7 Torr bir yüksek vakum elde etmek için turbo pompası kullanın. </li><li> Kamara yüksek vakum ulaşana kadar bekleyin turbo pompası kapatın ve daha sonra mekanik pompayı açın. </li><li> 100 mTor çalışma basıncını ulaşmak odası basıncı kadar mas akış kontrolörü tarafından odasına 0.3 ml / sn argon gazı akış. </li><li> Doğru akım (DC) açın güç kaynağını deşarj ve 25 dakika boyunca numune üzerine Pt ince film elektrot püskürtülmesi için 15 W DC gücü ayarlayın. </li><li> Pt elektrot tabakası magnetron sputt tarafından yatırılan sonrayöntemi ering, odadan numune çıkar. </li><li> Fotodirencin kaldırmak için ultrasonik temizleyici kimyasal asansör-off süreci için aseton sıvının içine daldırın örneği. </li><li> İyice ZnO ince film üzerine birbirine kenetlenmiş gibi Pt elektrot ışığa kaldırın ve sonra elde 1 dakikada temizlik zamanını ayarlayın. </li></ol> 6. RTA süreci <ol><li> RTA sistemine kadar fabrikasyon Pt / ZnO örnek yerleştirin. </li><li> 20 mTor için RTA odası basıncını aşağı pompalamak için mekanik pompası ve vanayı kullanın. </li><li> Oda basıncı 20 mTorr ulaşıncaya kadar, odasına 0.3 ml / sn argon gazı akışı ve 5 Torr çalışma basıncını ayarlamak bekleyin. </li><li> Sonraki, 100 o C / dk olarak ısıtma hızını ayarlamak. </li><li> Daha sonra, 10 dakika boyunca 450 o C&#39;de örnek tavlanması. </li><li> Tavı sonra, numune oda sıcaklığına soğuyana kadar, daha sonra numune almak bekleyin. </li></ol>

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The authors declare that they have no competing financial interests.

Kritik adımlar ve değişiklikler 1. adımda, yüzeyler iyice temizlenmeli ve 1.3 yüzeylerde hiçbir yağ veya organik ve inorganik kirlilikler var olduğundan emin olmak için takip 1.5 için adım olmalıdır. Alt tabaka yüzeyi üzerinde herhangi bir yağ ya da organik ve inorganik kirlilikler anlamlı filmin yapışmasını azaltacaktır. Adım 2 ZnO film hazırlama işleminden önce en önemli işlemdir. DEZn çok zehirli ve şiddetli su ile reaksiyona gir...

ZnO dolayı böyle RT ve büyük eksiton yüksek kimyasal kararlılık, düşük maliyet, sigara toksisite, optik pompalama için düşük güç eşiği, geniş direkt bant boşluğu (3.37 eV) olarak eşsiz özellikleri için umut verici bir geniş bant aralığı fonksiyonel yarı iletken malzeme olan ~ 60 meV 1-2 bağlanma enerjisi. Son zamanlarda, ZnO ince filmler saydam iletken oksit (TCO) filmler, mavi ışık yayan cihaz, alan etkili transistörler ve gaz sensörü 3-6 dahil olmak üzere birçok uygulama alanında istihdam edilmiştir. Öte yandan, ZnO indiyum ve kalay nadir ve pahalı olması nedeniyle indiyum kalay oksit (İTO) değiştirmek için, bir aday maddedir. Ayrıca, ZnO görünür dalga boyu bölgesi ve İTO filmleri 7-8 ile karşılaştırıldığında düşük öz direnç yüksek optik geçirgenliği sahiptir. Buna uygun olarak, ZnO imalatı, karakterizasyon ve uygulama olması kapsamlı olarak rapor edilmiştir. Bu çalışma, mevcut basit An yüksek c -Axis (0002) ZnO ince filmler sentezleyerek üzerinde duruluyoretkili bir yöntem ve UV fotodedektör yönelik pratik uygulama d. Son araştırmalar raporu bulguları, yüksek kaliteli ZnO ince film gibi sol-jel yöntemi, radyo frekans magnetron püskürtme, metal organik kimyasal buhar birikimi (MOCVD) ve bu nedenle 9-14 ile ilgili olarak, çeşitli teknikler ile sentezlenebilir göstermektedir. Her teknik avantajları ve dezavantajları vardır. Örneğin, püskürtme biriktirme bir temel avantajı, çok yüksek bir erime noktasına sahip olduğu, hedef malzemelerin kolayca substrat üzerine püskürtülür olmasıdır. Bunun aksine, püskürtme işlemi bir film yapılanması için, kaldıraçlı bir kapalı ile birleştirmek için zordur. Çalışmamızda, plazma gelişmiş kimyasal buhar biriktirme (PECVD) sistemi, yüksek kalite c sentezlemek için ZnO ince filmler -Axis kullanılmıştır. Plazma bombardımanı ince film yoğunluğunu artırmak ve iyon ayrışma reaksiyon oranını 15 artırabilirsiniz sentezleme sürecinde önemli bir faktördür. IçindeAyrıca, yüksek büyüme hızı ve geniş alan üniforma biriktirme PECVD tekniği için diğer ayırt edici avantajları vardır. Sentez tekniği dışında, madde üzerinde iyi yapışma başka düşünülmüş bir konudur. ZnO ve safir, aynı altıgen kafes yapısına sahip olduğundan pek çok çalışmada, c -plane safir yaygın ZnO ince filmler -Axis yüksek c sentezlemek için alt-tabaka olarak kullanılmıştır. Bununla birlikte, ZnO kaba yüzey morfolojisi ve düzlem yönünde 16 yönlendirilmiş ZnO c -plane safir (% 18) arasında büyük kafes Uyumsuzluklara nedeniyle yüksek bir kalıntı (defekt-ilgili olarak) bir taşıyıcı konsantrasyonlarını gösteren safir alt-tabaka üzerinde sentezlenmiştir. Safir alt tabaka ile karşılaştırıldığında, bir Si gofret ZnO sentezi için başka yaygın kullanılan substrat olduğunu. Si gofret yoğun yarı iletken endüstrisinde kullanılan edilmiştir; ve bu nedenle, Si yüzeylerde yüksek kaliteli ZnO ince filmlerin büyüme neces çok önemli verekli. Ne yazık ki, ZnO ve Si arasındaki kristal yapısı ve ısıl genleşme katsayısı kristal kalitesinde bozulmaya yol açan belli farklıdır. Geçtiğimiz on yıl içinde, büyük çabalar ZnO tampon katmanları 17, çeşitli gaz atmosferinde 18 tavlama ve Si substrat yüzeyinin 19 pasivasyon dahil olmak üzere çeşitli yöntemler kullanılarak Si yüzeylerde ZnO ince filmlerin kalitesini artırmak için yapılmıştır. Bu çalışmada başarılı bir şekilde yüksek c herhangi bir tampon tabaka veya ön tedavi olmadan Si yüzeylerde ZnO ince film -Axis sentezlemek için etkin bir yöntem basit ve sundu. Deney sonuçları uygun büyüme sıcaklığı altında sentezlenen ZnO ince filmlerin iyi kristal ve optik nitelikleri gösterdi belirtti. Kristal yapı, RF plazma kompozisyonu, yüzey morfolojisi ve ZnO ince filmlerin optik özellikleri, X-ışını kırınımı (XRD), optik emisyon spektroskopisi (OES), alan emisyonlu sc ile incelendisırasıyla anning elektron mikroskobu (FE-SEM) ve RT fotolüminesans (PL) spektrumları. Ayrıca, ZnO ince filmlerin geçirgenliği de teyit ve rapor edilmiştir. Olarak sentezlenmiş ZnO ince film UV fotodedektör uygulaması için bir algılama tabakası da bu çalışmada araştırıldı olarak görev yaptı. UV fotodedektör UV izlenmesi büyük potansiyel uygulamalar, optik anahtarı, alev alarm ve füze ısınma sistemi 20-21 sahiptir. Böyle Ohmik temas ve Schottky temas da dahil olmak üzere pozitif içsel negatif (pin) modu ve metal-yarıiletken-metal (MSM) yapılar olarak yapılmıştır fotodedektör birçok türü vardır. Her tür kendi avantajları ve dezavantajları vardır. Şu anda, MSM fotodetektör yapıları nedeniyle duyarlılık, güvenilirlik ve tepki ve iyileşme süresi 22-24 onların üstün performans yoğun ilgi gördü. Burada sunulan sonuçlar MSM Ohmik kontak modu istihdam olduğunu göstermiştirZnO ince film bazlı UV fotodedektör imal etmek. Fotodedektör Böyle bir tür tipik olarak yüksek c ZnO ince filmin UV fotodedektör için uygun bir algılama katmanı -Axis belirten iyi cevap verebilen ve güvenilirlik ortaya koymaktadır.

<table><tbody><tr><td>RF power supply</td><td>ADVANCED ENERGY</td><td>RFX-600</td><td></td></tr><tr><td>Butterfly valve</td><td>MKS</td><td>253B-1-40-1</td><td></td></tr><tr><td>Mass flow controller</td><td>PROTEC INSTRUMENTS</td><td>PC-540</td><td></td></tr><tr><td>Pressure controller</td><td>MKS</td><td>600 series&amp;nbsp;</td><td></td></tr><tr><td>Heater</td><td>UPGRADE INSTRUMENT CO.</td><td>UI-TC 3001</td><td></td></tr><tr><td>Sputter gun</td><td>AJA INTERNATIONAL</td><td>A320-HA</td><td></td></tr><tr><td>DEZn 1.5M</td><td>ACROS ORGANIC USA, New Jersey</td><td></td><td>also called Diethylzinc (C2H5)2Zn</td></tr><tr><td>Spin coater&amp;nbsp;</td><td>SWIENCO</td><td>PW - 490</td><td></td></tr><tr><td>I-V measurement</td><td>Keithley</td><td>Model: 2400</td><td></td></tr><tr><td>Photocondutive measurement&amp;nbsp;</td><td>Home-built</td><td></td><td></td></tr><tr><td>UV light sourse</td><td>Panasonic</td><td>ANUJ 6160</td><td></td></tr><tr><td>Mask aligner</td><td>Karl Suss</td><td>MJB4</td><td></td></tr><tr><td>Photoresist</td><td>Shipley a Rohm &amp;amp; Haas company</td><td>S1813</td><td></td></tr><tr><td>Developer</td><td>Shipley a Rohm &amp;amp; Haas company</td><td>MF319</td><td></td></tr><tr><td>Silicon wafer</td><td>E-Light Technology Inc</td><td>12/0801</td><td></td></tr><tr><td>Glass substrate</td><td>CORNING</td><td>1737</td><td>P-type / Boron</td></tr></tbody></table>

synthesis and characterization of high c-axis zno thin film by plasma enhanced chemical vapor deposition system and its uv photodetector application

Bu çalışmada, yüksek c -Axis (0002) tercih edilen oryantasyonunun Çinko oksit (ZnO), ince filmler başarılı ve etkili bir plazma destekli kimyasal buhar biriktirme (PECVD) sistemi kullanılarak farklı sentez sıcaklıklarda ile, silikon (Si) alt-tabakalar üzerine sentezlenmiştir. Farklı sentezlenmiş kristal yapısına sıcaklıklar, yüzey morfolojileri ve optik özelliklerinin etkileri incelenmiştir. X-ışını difraksiyonu (XRD) paterni (0002) difraksiyon doruk şiddeti 400 o C&#39;de kadar artan sıcaklık ile sentezlenen güçlü hale geldiği belirtilmiştir (0002) zirvesinin dağılma yoğunluğu giderek zayıf 400 o C aşan kadar sentezlenen sıcaklık (10-10) kırılma tepe görünümü ile eşlik oldu RT fotolüminesans (PL) spektrumları emisyonu etrafında 375 nm ve yaklaşık 575 nm und bulunan bir ihmal derin seviyesi (DL) emisyon gözlenen güçlü bir yakın-band kenar (NBE) sergiledier yüksek c ZnO ince filmler -Axis. Saha emisyon taramalı elektron mikroskobu (FE-SEM) görüntüleri homojen bir yüzey ve küçük tanecik boyut dağılımı ile ortaya koymuştur. ZnO ince filmler de geçirgenliği ölçmek için aynı parametreler altında cam alt tabakalar üzerine sentezlenmiştir. Ultraviyole (UV) fotodedektör uygulamanın amacına uygun olarak, birbirine kenetlenmiş platin (Pt) ince film (kalınlık ~ 100 nm) geleneksel optik litografi süreci ve radyo frekansı (RF) manyetik alanda sıçratma yoluyla imal. Omik temas ulaşmak için, cihaz 10 dakika boyunca hızlı bir şekilde termal tavlama (RTA) sistem tarafından 450 oC argon koşullarda tavlanmıştır. Sistematik ölçümleri alındıktan sonra, akım-gerilim (I - V) fotoğrafı ve karanlık akım ve zamana bağlı fotoakım yanıtı meydana eğrisi, yüksek c ZnO ince film, uygun bir algılama katmanı -Axis belirten iyi cevap verebilen ve güvenilirlik sergilediUV fotodetektör uygulama için.

ZnO (0002), yüksek c ince filmler başarıyla PECVD sistemi ile Si yüzeyler üzerine tercih oryantasyon sentezlenmiş edilmiştir -Axis. Karbon dioksit (CO2) ve dietilçinko (DEZn), sırasıyla, oksijen ve çinko öncüleri olarak kullanılmıştır. ZnO ince filmlerin kristal yapısı, ZnO ince film güçlü (0002) kırılma tepe noktasıyla 400 o C&#39;de sentezlenmiş gösteren X-ışını difraksiyonu (Şekil 4) ile karakterize edildi. Sentezlenen sıcaklık 500 <sup...

Watch this Scientific Journal Video about Synthesis and Characterization of High c-axis ZnO Thin Film by Plasma Enhanced Chemical Vapor Deposition System and its UV Photodetector Application at JoVE.c

Synthesis and Characterization of High c-axis ZnO Thin Film by Plasma Enhanced Chemical Vapor Deposition System and its UV Photodetector Application

We offered a method to directly synthesize high c-axis (0002) ZnO thin film by plasma enhanced chemical vapor deposition. The as-synthesized ZnO thin film combined with Pt interdigitated electrode was used as sensing layer for ultraviolet photodetector, showing a high performance through a combination of its good responsivity and reliability.

Sentezi ve Plazma ile yüksek c-ekseni ZnO İnce Film Karakterizasyonu CVD Sistemi ve UV Fotodetektör Uygulaması Enhanced

In this study, zinc oxide (ZnO) thin films with high c-axis (0002) preferential orientation have been successfully and effectively synthesized onto ...

synthesis-characterization-high-c-axis-zno-thin-film-plasma-enhanced

Universidad de Cartagena UDEC

Research

JoVE Journal

Engineering

15.2K Görüntüleme.  National Taipei University of Technology (TAIPEI TECH). We offered a method to directly synthesize high c-axis (0002) ZnO thin film by plasma enhanced chemical vapor deposition. The as-synthesized ZnO thin film combined with Pt interdigitated electrode was used as sensing layer for ultraviolet photodetector, showing a high performance through a combination of its good responsivity and reliability.

Video: Synthesis and Characterization of High c-axis ZnO Thin Film by Plasma Enhanced Chemical Vapor Deposition System and its UV Photodetector Application

Polycrystalline Silicon Thin-film Solar cells with Plasmonic-enhanced Light-trapping

One of major approaches to cheaper solar cells is reducing the amount of semiconductor material used for their fabrication and making cells thinner. To compensate for lower light absorption such physically thin devices have to incorporate light-trapping which increases their optical thickness. Light scattering by textured surfaces is a common technique but it cannot be universally applied to all solar cell technologies. Some cells, for example those made of evaporated silicon, are planar as produced and they require an alternative light-trapping means suitable for planar devices. Metal nanoparticles formed on planar silicon cell surface and capable of light scattering due to surface plasmon resonance is an effective approach.
The paper presents a fabrication procedure of evaporated polycrystalline silicon solar cells with plasmonic light-trapping and demonstrates how the cell quantum efficiency improves due to presence of metal nanoparticles.
To fabricate the cells a film consisting of alternative boron and phosphorous doped silicon layers is deposited on glass substrate by electron beam evaporation. An Initially amorphous film is crystallised and electronic defects are mitigated by annealing and hydrogen passivation. Metal grid contacts are applied to the layers of opposite polarity to extract electricity generated by the cell. Typically, such a ~2 &mu;m thick cell has a short-circuit current density (Jsc) of 14-16 mA/cm2, which can be increased up to 17-18 mA/cm2 (~25% higher) after application of a simple diffuse back reflector made of a white paint.
To implement plasmonic light-trapping a silver nanoparticle array is formed on the metallised cell silicon surface. A precursor silver film is deposited on the cell by thermal evaporation and annealed at 23&deg;C to form silver nanoparticles. Nanoparticle size and coverage, which affect plasmonic light-scattering, can be tuned for enhanced cell performance by varying the precursor film thickness and its annealing conditions. An optimised nanoparticle array alone results in cell Jsc enhancement of about 28%, similar to the effect of the diffuse reflector. The photocurrent can be further increased by coating the nanoparticles by a low refractive index dielectric, like MgF2, and applying the diffused reflector. The complete plasmonic cell structure comprises the polycrystalline silicon film, a silver nanoparticle array, a layer of MgF2, and a diffuse reflector. The Jsc for such cell is 21-23 mA/cm2, up to 45% higher than Jsc of the original cell without light-trapping or ~25% higher than Jsc for the cell with the diffuse reflector only.
Introduction
Light-trapping in silicon solar cells is commonly achieved via light scattering at textured interfaces. Scattered light travels through a cell at oblique angles for a longer distance and when such angles exceed the critical angle at the cell interfaces the light is permanently trapped in the cell by total internal reflection (Animation 1: Light-trapping). Although this scheme works well for most solar cells, there are developing technologies where ultra-thin Si layers are produced planar (e.g. layer-transfer technologies and epitaxial c-Si layers) 1 and or when such layers are not compatible with textures substrates (e.g. evaporated silicon) 2. For such originally planar Si layer alternative light trapping approaches, such as diffuse white paint reflector 3, silicon plasma texturing 4 or high refractive index nanoparticle reflector 5 have been suggested.
Metal nanoparticles can effectively scatter incident light into a higher refractive index material, like silicon, due to the surface plasmon resonance effect 6. They also can be easily formed on the planar silicon cell surface thus offering a light-trapping approach alternative to texturing. For a nanoparticle located at the air-silicon interface the scattered light fraction coupled into silicon exceeds 95% and a large faction of that light is scattered at angles above critical providing nearly ideal light-trapping condition (Animation 2: Plasmons on NP). The resonance can be tuned to the wavelength region, which is most important for a particular cell material and design, by varying the nanoparticle average size, surface coverage and local dielectric environment 6,7. Theoretical design principles of plasmonic nanoparticle solar cells have been suggested 8. In practice, Ag nanoparticle array is an ideal light-trapping partner for poly-Si thin-film solar cells because most of these design principle are naturally met. The simplest way of forming nanoparticles by thermal annealing of a thin precursor Ag film results in a random array with a relatively wide size and shape distribution, which is particularly suitable for light-trapping because such an array has a wide resonance peak, covering the wavelength range of 700-900 nm, important for poly-Si solar cell performance. The nanoparticle array can only be located on the rear poly-Si cell surface thus avoiding destructive interference between incident and scattered light which occurs for front-located nanoparticles 9. Moreover, poly-Si thin-film cells do not requires a passivating layer and the flat base-shaped nanoparticles (that naturally result from thermal annealing of a metal film) can be directly placed on silicon further increases plasmonic scattering efficiency due to surface plasmon-polariton resonance 10.
The cell with the plasmonic nanoparticle array as described above can have a photocurrent about 28% higher than the original cell. However, the array still transmits a significant amount of light which escapes through the rear of the cell and does not contribute into the current. This loss can be mitigated by adding a rear reflector to allow catching transmitted light and re-directing it back to the cell. Providing sufficient distance between the reflector and the nanoparticles (a few hundred nanometers) the reflected light will then experience one more plasmonic scattering event while passing through the nanoparticle array on re-entering the cell and the reflector itself can be made diffuse - both effects further facilitating light scattering and hence light-trapping. Importantly, the Ag nanoparticles have to be encapsulated with an inert and low refractive index dielectric, like MgF2 or SiO2, from the rear reflector to avoid mechanical and chemical damage 7. Low refractive index for this cladding layer is required to maintain a high coupling fraction into silicon and larger scattering angles, which are ensured by the high optical contrast between the media on both sides of the nanoparticle, silicon and dielectric 6. The photocurrent of the plasmonic cell with the diffuse rear reflector can be up to 45% higher than the current of the original cell or up to 25% higher than the current of an equivalent cell with the diffuse reflector only.

Polycrystalline silicon thin-film solar cells on glass are fabricated by deposition of boron and phosphorous doped silicon layers followed by crystallisation, defect passivation and metallisation. Plasmonic light-trapping is introduced by forming Ag nanoparticles on the silicon cell surface capped with a diffused reflector resulting in ~45% photocurrent enhancement.

Plasmonic geliştirilmiş Işık-tutucu ile Polycrystalline Silikon İnce-film Solar hücreler

One of major approaches to cheaper solar cells is reducing the amount of semiconductor material used for their fabrication and making cells thinner. To ...

Mühendislik

Fabrication of Nano-engineered Transparent Conducting Oxides by Pulsed Laser Deposition

Nanosecond Pulsed Laser Deposition (PLD) in the presence of a background gas allows the deposition of metal oxides with tunable morphology, structure, density and stoichiometry by a proper control of the plasma plume expansion dynamics. Such versatility can be exploited to produce nanostructured films from compact and dense to nanoporous characterized by a hierarchical assembly of nano-sized clusters. In particular we describe the detailed methodology to fabricate two types of Al-doped ZnO (AZO) films as transparent electrodes in photovoltaic devices: 1) at low O2 pressure, compact films with electrical conductivity and optical transparency close to the state of the art transparent conducting oxides (TCO) can be deposited at room temperature, to be compatible with thermally sensitive materials such as polymers used in organic photovoltaics (OPVs); 2) highly light scattering hierarchical structures resembling a forest of nano-trees are produced at higher pressures. Such structures show high Haze factor (&gt;80%) and may be exploited to enhance the light trapping capability. The method here described for AZO films can be applied to other metal oxides relevant for technological applications such as TiO2, Al2O3, WO3 and Ag4O4.

We describe the experimental method to deposit nanostructured oxide thin films by nanosecond Pulsed Laser Deposition (PLD) in the presence of a background gas. By using this method Al-doped ZnO (AZO) films, from compact to hierarchically structured as nano-tree forests, can be deposited.

Fabrikasyon Pulsed Lazer Biriktirme tarafından Transparent letken Oksitler Nano-mühendislik

Nanosecond Pulsed  Laser Deposition (PLD) in the presence of a background gas allows the deposition  of metal oxides with tunable morphology, structure, ...

Preparation and Use of Photocatalytically Active Segmented Ag|ZnO and Coaxial TiO2-Ag Nanowires Made by Templated Electrodeposition

Photocatalytically active nanostructures require a large specific surface area with the presence of many catalytically active sites for the oxidation and reduction half reactions, and fast electron (hole) diffusion and charge separation. Nanowires present suitable architectures to meet these requirements. Axially segmented Ag|ZnO and radially segmented (coaxial) TiO2-Ag nanowires with a diameter of 200 nm and a length of 6-20 &#181;m were made by templated electrodeposition within the pores of polycarbonate track-etched (PCTE) or anodized aluminum oxide (AAO) membranes, respectively. In the photocatalytic experiments, the ZnO and TiO2 phases acted as photoanodes, and Ag as cathode. No external circuit is needed to connect both electrodes, which is a key advantage over conventional photo-electrochemical cells. For making segmented Ag|ZnO nanowires, the Ag salt electrolyte was replaced after formation of the Ag segment to form a ZnO segment attached to the Ag segment. For making coaxial TiO2-Ag nanowires, a TiO2 gel was first formed by the electrochemically induced sol-gel method. Drying and thermal annealing of the as-formed TiO2 gel resulted in the formation of crystalline TiO2 nanotubes. A subsequent Ag electrodeposition step inside the TiO2 nanotubes resulted in formation of coaxial TiO2-Ag nanowires. Due to the combination of an n-type semiconductor (ZnO or TiO2) and a metal (Ag) within the same nanowire, a Schottky barrier was created at the interface between the phases. To demonstrate the photocatalytic activity of these nanowires, the Ag|ZnO nanowires were used in a photocatalytic experiment in which H2 gas was detected upon UV illumination of the nanowires dispersed in a methanol/water mixture. After 17 min&#160;of illumination, approximately 0.2 vol% H2 gas was detected from a suspension of ~0.1 g of Ag|ZnO nanowires in a 50 ml 80 vol% aqueous methanol solution.

Preparation and Use of Photocatalytically Active Segmented Ag|ZnO and Coaxial TiO2-Ag Nanowires Made by Templated Electrodeposition

Procedures are outlined to prepare segmented and coaxial nanowires via templated electrodeposition in nanopores. As examples, segmented nanowires consisting of Ag and ZnO segments, and coaxial nanowires consisting of a TiO2 shell and a Ag core were made. The nanowires were used in photocatalytic hydrogen formation experiments.

Hazırlık ve foto Aktif Bölümlü Ag Kullanım | ZnO ve Koaksiyel TiO<sub&gt; 2</subTemplated elektrodepozisyon tarafından yapılmıştır&gt;-Ag Nanoteller

Photocatalytically active nanostructures require a large specific surface area with the presence of many catalytically active sites for the oxidation and ...

Improved Heterojunction Quality in Cu2O-based Solar Cells Through the Optimization of Atmospheric Pressure Spatial Atomic Layer Deposited Zn1-xMgxO

Atmospheric pressure spatial atomic layer deposition (AP-SALD) was used to deposit n-type ZnO and Zn1-xMgxO thin films onto p-type thermally oxidized Cu2O substrates outside vacuum at low temperature. The performance of photovoltaic devices featuring atmospherically fabricated ZnO/Cu2O heterojunction was dependent on the conditions of AP-SALD film deposition, namely, the substrate temperature and deposition time, as well as on the Cu2O substrate exposure to oxidizing agents prior to and during the ZnO deposition. Superficial Cu2O to CuO oxidation was identified as a limiting factor to heterojunction quality due to recombination at the ZnO/Cu2O interface. Optimization of AP-SALD conditions as well as keeping Cu2O away from air and moisture in order to minimize Cu2O surface oxidation led to improved device performance. A three-fold increase in the open-circuit voltage (up to 0.65 V) and a two-fold increase in the short-circuit current density produced solar cells with a record 2.2% power conversion efficiency (PCE). This PCE is the highest reported for a Zn1-xMgxO/Cu2O heterojunction formed outside vacuum, which highlights atmospheric pressure spatial ALD as a promising technique for inexpensive and scalable fabrication of Cu2O-based photovoltaics.

Improved Heterojunction Quality in Cu2O-based Solar Cells Through the Optimization of Atmospheric Pressure Spatial Atomic Layer Deposited Zn1-xMgxO

Here we present a protocol for synthesizing Zn1-xMgxO/Cu2O heterojunctions in open-air at low temperature via atmospheric pressure spatial atomic layer deposition (AP-SALD) of Zn1-xMgxO on cuprous oxide. Such high quality conformal metal oxides can be grown on a variety of substrates including plastics by this cheap and scalable method.

Cu geliştirilmiş Heterojonksiyonlar Kalite<sub&gt; 2</sub&gt; Depolar Atmosfer Basıncı Mekansal Atom Katman Optimizasyonu ile Güneş Pilleri O tabanlı<br /&gt; Zn<sub&gt; 1-x</sub&gt; Mg<sub&gt; X</sub&gt; O

Atmospheric pressure spatial atomic layer deposition (AP-SALD) was used to deposit n-type ZnO and Zn1-xMgxO thin films onto p-type thermally oxidized Cu2O ...

Kimya

Synthesis of Hierarchical ZnO/CdSSe Heterostructure Nanotrees

A two-step chemical vapor deposition procedure is here employed to prepare tree-like hierarchical ZnO/CdSSe hetero-nanostructures. The structures are composed of CdSSe branches grown on ZnO nanowires that are vertically aligned on a transparent sapphire substrate. The morphology was measured via scanning electron microscopy. The crystal structure was determined by X-ray powder diffraction analysis. Both the ZnO stem and CdSSe branches have a predominantly wurtzite crystal structure. The mole ratio of S and Se in the CdSSe branches was measured by energy dispersive X-ray spectroscopy. The CdSSe branches result in strong visible light absorption. Photoluminescence (PL) spectroscopy showed that the stem and branches form a type-II heterojunction. PL lifetime measurements showed a decrease in the lifetime of emission from the trees when compared to emission from individual ZnO stems or CdSSe branches and indicate fast charge transfer between CdSSe and ZnO. The vertically aligned ZnO stems provide a direct electron transport pathway to the substrate and allow for efficient charge separation after photoexcitation by visible light. The combination of the abovementioned properties makes ZnO/CdSSe nanotrees promising candidates for applications in solar cells, photocatalysis, and opto-electronic devices.

Here, we prepare and characterize novel tree-like hierarchical ZnO/CdSSe nanostructures, where CdSSe branches are grown on vertically aligned ZnO nanowires. The resulting nanotrees are a potential material for solar energy conversion and other opto-electronic devices.

Hiyerarşik ZnO / CdSSe Heteroyapı Nanotrees sentezi

A two-step chemical vapor deposition procedure is here employed to prepare tree-like hierarchical ZnO/CdSSe hetero-nanostructures. The structures are ...

Aerosol-assisted Chemical Vapor Deposition of Metal Oxide Structures: Zinc Oxide Rods

Whilst columnar zinc oxide (ZnO) structures in the form of rods or wires have been synthesized previously by different liquid- or vapor-phase routes, their high cost production and/or incompatibility with microfabrication technologies, due to the use of pre-deposited catalyst-seeds and/or high processing temperatures exceeding 900 &#176;C, represent a drawback for a widespread use of these methods. Here, however, we report the synthesis of ZnO rods via a non-catalyzed vapor-solid mechanism enabled by using an aerosol-assisted chemical vapor deposition (CVD) method at 400 &#176;C with zinc chloride (ZnCl2) as the precursor and ethanol as the carrier solvent. This method provides both single-step formation of ZnO rods and the possibility of their direct integration with various substrate types, including silicon, silicon-based micromachined platforms, quartz, or high heat resistant polymers. This potentially facilitates the use of this method at a large-scale, due to its compatibility with state-of-the-art microfabrication processes for device manufacture. This report also describes the properties of these structures (e.g., morphology, crystalline phase, optical band gap, chemical composition, electrical resistance) and validates its gas sensing functionality towards carbon monoxide.

Columnar zinc oxide structures in the form of rods are synthesized via aerosol-assisted chemical vapor deposition without the use of pre-deposited catalyst-seed particles. This method is scalable and compatible with various substrates based on either silicon, quartz or polymers.

Aerosol destekli kimyasal Buhar biriktirme Metal Oksit yapıları: çinko oksit çubuklar

Whilst columnar zinc oxide (ZnO) structures in the form of rods or wires have been synthesized previously by different liquid- or vapor-phase routes, ...

Well-aligned Vertically Oriented ZnO Nanorod Arrays and their Application in Inverted Small Molecule Solar Cells

This manuscript describes how to design and fabricate efficient inverted solar cells, which are based on a two-dimensional conjugated small molecule (SMPV1) and [6,6]-phenyl-C71-butyric acid methyl ester (PC71BM), by utilizing ZnO nanorods (NRs) grown on a high quality Al-doped ZnO (AZO) seed layer. The inverted SMPV1:PC71BM solar cells with ZnO NRs that grew on both a sputtered and sol-gel processed AZO seed layer are fabricated. Compared with the AZO thin film prepared by the sol-gel method, the sputtered AZO thin film exhibits better crystallization and lower surface roughness, according to X-ray diffraction (XRD) and atomic force microscope (AFM) measurements. The orientation of the ZnO NRs grown on a sputtered AZO seed layer shows better vertical alignment, which is beneficial for the deposition of the subsequent active layer, forming better surface morphologies. Generally, the surface morphology of the active layer mainly dominates the fill factor (FF) of the devices. Consequently, the well-aligned ZnO NRs can be used to improve the carrier collection of the active layer and to increase the FF of the solar cells. Moreover, as an anti-reflection structure, it can also be utilized to enhance the light harvesting of the absorption layer, with the power conversion efficiency (PCE) of solar cells reaching 6.01%, higher than the sol-gel based solar cells with an efficiency of 4.74%.

This manuscript describes how to design and fabricate efficient inverted SMPV1:PC71BM solar cells with ZnO nanorods (NRs) grown on a high quality Al-doped ZnO (AZO) seed layer. The well-aligned vertically oriented ZnO NRs exhibit high crystalline properties. The power conversion efficiency of solar cells can reach 6.01%.

İyi hizalanmış dikey odaklı ZnO Nanorod diziler ve kendi uygulama içinde ters küçük molekül güneş hücreleri

This manuscript describes how to design and fabricate efficient inverted solar cells, which are based on a two-dimensional conjugated small molecule ...

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Heterostructure field effect transistors (HFETs) utilizing a two dimensional electron gas (2DEG) channel have a great potential for high speed device applications. Zinc oxide (ZnO), a semiconductor with a wide bandgap (3.4 eV) and high electron saturation velocity has gained a great deal of attention as an attractive material for high speed devices. Efficient gate modulation, however, requires high-quality Schottky contacts on the barrier layer. In this article, we present our Schottky diode fabrication procedure on Zn-polar BeMgZnO/ZnO heterostructure with high density 2DEG which is achieved through strain modulation and incorporation of a few percent Be into the MgZnO-based barrier during growth by molecular beam epitaxy (MBE). To achieve high crystalline quality, nearly lattice-matched high-resistivity GaN templates grown by metal-organic chemical vapor deposition (MOCVD) are used as the substrate for the subsequent MBE growth of the oxide layers. To obtain the requisite Zn-polarity, careful surface treatment of GaN templates and control over the VI/II ratio during the growth of low temperature ZnO nucleation layer are utilized. Ti/Au electrodes serve as Ohmic contacts, and Ag electrodes deposited on the O2 plasma pretreated BeMgZnO surface are used for Schottky contacts.

Attainment of high-quality Schottky contacts is imperative for achieving efficient gate modulation in heterostructure field effect transistors (HFETs). We present the fabrication methodology and characteristics of Schottky diodes on Zn-polar BeMgZnO/ZnO heterostructures with high-density two dimensional electron gas (2DEG), grown by plasma-assisted molecular beam epitaxy on GaN templates.

Moleküler ışın plazma destekli Epitaxy tarafından yetiştirilen Zn-kutup BeMgZnO/ZnO Heterostructure üzerinde Schottky diyotlar imalatı

Heterostructure field effect transistors (HFETs) utilizing a two dimensional electron gas (2DEG) channel have a great potential for high speed device ...

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors

Aluminum-oxide (Al2O3) is a low cost, easily processable and high dielectric constant insulating material that is particularly appropriate for use as the dielectric layer of thin-film transistors (TFTs). Growth of aluminum-oxide layers from anodization of metallic aluminum films is greatly advantageous when compared to sophisticated processes such as atomic layer deposition (ALD) or deposition methods that demand relatively high temperatures (above 300 &#176;C) such as aqueous combustion or spray-pyrolysis. However, the electrical properties of the transistors are highly dependent on the presence of defects and localized states at the semiconductor/dielectric interface, which are strongly affected by the manufacturing parameters of the anodized dielectric layer. To determine how several fabrication parameters influence the device performance without performing all possible combination of factors, we used a reduced factorial analysis based on a Plackett-Burman design of experiments (DOE). The choice of this DOE permits the use of only 12 experimental runs of combinations of factors (instead of all 256 possibilities) to obtain the optimized device performance. The ranking of the factors by the effect on device responses such as the TFT mobility is possible by applying analysis of variance (ANOVA) to the obtained results.

Anodization parameters for growth of the aluminum-oxide dielectric layer of zinc-oxide thin-film transistors (TFTs) are varied to determine the effects on the electrical parameter responses. Analysis of variance (ANOVA) is applied to a Plackett-Burman design of experiments (DOE) to determine the manufacturing conditions that result in optimized device performance.

İnce Film Transistörlerinin Alüminyum Oksit Dielektrik Tabakasına Anodizasyon Parametrelerinin Etkisi

Aluminum-oxide (Al2O3) is a low cost, easily processable and high dielectric constant insulating material that is particularly appropriate for use as the ...

Metal Oxide Heterojunction for Photocatalytic Activities

There is a significant global demand for improvements in synthesis techniques and their optimal characteristics, especially for industrial-scale applications. Sol-gel-based solution combustion synthesis (SG-SCS) is a simple method to produce ordered porous materials. In this regard, Pearson&#39;s hard and soft acids and bases theory assists in selecting host-dopant reactivity to form a proper heterojunction.
The formation of a heterojunction also changes the essential properties of the materials, improving photocatalysis via charge transfer or synergistic activities. A calcination temperature of 500 &#176;C is ideal for this process based on the results of the stability assessment via a differential thermogravimetry ratio analysis (DTG).
The nanoscale dimensions of the nanoparticles (NPs) and nanocomposites (NCs) generated were validated using X-ray diffraction and high-resolution transmission electron microscopy (HRTEM). Furthermore, the scanning electron microscopy micrographs and BET analyses confirmed the porosity nature of the materials. HRTEM, X-ray photoelectron spectroscopy, and energy-dispersive X-ray investigations established the materials composition. The study found that NCs degraded the acid orange 8 (AO8) color more efficiently than bare ZnO.

The development of a heterojunction boosts the photocatalytic activities of solution combustion synthesis, which is a time-/energy-efficient process. Advanced analytical characterization techniques were used in this protocol to evaluate the materials&#39; characteristics, and nanocomposites demonstrated improved acid orange-8 dye degradation.

Sentezi ve Plazma ile yüksek c-ekseni ZnO İnce Film Karakterizasyonu CVD Sistemi ve UV Fotodetektör Uygulaması Enhanced

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