この作品は、財政的に科学技術省と中国の共和国の国立科学評議会のサポートされていた（契約番号NSC 101から2221-E-027から042と101から2622 NSC-E-027から003-CC2）。 DH魏のおかげで博士Shechtman賞国立台北科技大学（台北TECH） 賞。

1。基板の準備とクリーニング<ol><li> Siの（100）ウエハから10ミリメートル×10ミリメートルのシリコン基板をカットします。 </li><li> 10ミリメートル×10ミリメートルのガラス基板をカットします。 </li><li> 15分間イソプロパノール次いで、10分間アセトンでシリコンとガラス基板を洗浄するために超音波洗浄器を使用して10分間アルコール、および。 </li><li>脱イオン（DI）水で3回の基板を洗浄します。 </li><li>ブロー乾燥窒素銃で基板を。 </li></ol> 2. DEZnを調製および保存注：また、DEZnを呼ばジエチル亜鉛（C 2 H 5）2 Znが、二つのエチル基に結合した亜鉛の中心から成る高度に発火性有機亜鉛化合物です。 DEZnをを使用しているとき人で作業しないでください。 DEZnを非常に毒性であり、酸素や水分に敏感であり、水の近くDEZnをを配置しないようにしてください。常に防護マスク、目の保護具を着用。すべての手順は、フード内で実行する必要があります。最も重要なのは、未使用のDEZnをaがb必要がありますeは5 O Cの環境下に保存されています。 注意：DEZnを最初に使用するために、手順2に従っていない場合は、ステップ3から実験を開始します。 <ol><li>ボトルから30ミリリットルDEZnをを引き出した後、鋼シリンダー内に置かビーカーに注入するために注射器を使用してください。 </li><li>反応室でボンベを接続するための亜鉛メッキ鉄パイプを使用してください。 </li><li> （6トール）真空環境における鋼製シリンダーをポンプダウンする機械式ポンプとボールバルブを使用してください。 注：DEZnを深刻な酸素と反応し、それが真空環境中に維持されなければなりません。 </li><li> 5°Cの環境で使用されていないDEZnを保管してください。 </li></ol> 3. PECVD室の準備とZnO薄膜の合成注：プラズマ化学気相成長法の概略図を図1に示されています。 <ol><li> 30ミリメートルで、シャワーヘッド電極と試料台との間の作動距離を設定します。 </li> &lt;DEZnを入口3からセンチの距離がある場合李は&gt;適切な場所に反応室の試料ステージに基板を配置します。 </li><li>ロータリーポンプを開いて、徐々にゲートバルブ、バタフライバルブを開きます。 </li><li>反応室の背景圧力は30ミリトールより低くなるまで待ちます。 </li><li>ゲートバルブ、バタフライバルブを閉じて、ロータリーポンプに接続します。 </li><li>その後、3×10 -6 Torrの高真空に到達するために、ターボポンプと相対ゲートバルブを開きます。 </li><li>必要な真空状態に達した後、熱コントローラを開き、（異なる実験パラメータ200、300、400、500、600 O C）合成温度に試料ステージを加熱します。 </li><li>温度と圧力が必要な状態に到達すると、ターボポンプを閉じ、同時にロータリーポンプに接続するゲートバルブやバタフライバルブを開きます。 </li><li>次に、ガス入口バルブを開き、アルゴングラムをオン同時にフローコントローラとして。 </li><li>チャンバ内にアルゴンガス（0.167ミリリットル/秒）で流れます。 </li><li> 500ミリトールのチャンバ圧力を設定します。 </li><li> RF（13.56MHzの）発電機とのマッチングネットワークをオンにし、その後、サンプルを15分間表面パージするため、100WのRFパワーを設定します。 </li><li>サンプルのパージを終えた後、70 WにダウンRF電力をオン</li><li>次に、二酸化炭素ガス制御装置及びガス入口バルブをオン。 </li><li>チャンバ内に二酸化炭素（0.5ミリリットル/秒）で流れます。 </li><li> 6トールで作動圧を設定します。 </li><li>チャンバ圧力は6トルに達した後、同時にDEZnをに接続されたチャンバと開放ボール弁にジエチル亜鉛（DEZnを）を搬送するためのキャリアガスとして高純アルゴン（0.167ミリリットル/秒）で流れます。同時に、ZnO膜の合成を開始します。 </li><li> 5分間のZnO膜のプラズマ合成を継続します。 </li><li> ZnO膜が合成された後、順次は、RF発生器、ボールバルブ、熱詐欺をオフにしますコントローラと、ガス入口弁と一緒にガス流量コントローラのすべて。 </li><li>試料ステージの温度が室温まで冷却すると、サンプルを取り出してください。注：冷却速度は約1.8 O℃/分です。 </li></ol>合成されたZnO薄膜上にインターデジット状パターンの4準備注：リソグラフィプロセスの概略を図3に示されています。 <ol><li> 10分間150°Cの時のように合成したZnOサンプルを焼くためにホットプレートを使用してください。 </li><li>スピンコーターの上にサンプルを配置し、その後のZnO試料に100μlのフォトレジストの溶液（S1813）を分注します。 </li><li> 10秒間800rpmでスピンコーターを実行してから、均一に薄膜を生成するために30秒間3000rpmでに加速します。 </li><li>ソフトベーク90秒間105 O CでフォトレジストでコーティングされたZnO系サンプル。 </li><li>ソフトベークした後、フォトレジストコーティングされたサンプルトゥルを露出させるためにUV光を使用しマスクアライナによりフォトマスクをGH。露光時間は2秒であり、電力は400 Wです。 注意：フォトマスクのパターンがある幅広の0.03ミリメートルと長い4ミリメートル（14ペア）および図2に示すように0.15ミリメートルの電極間の間隔を有し、互いにかみ合っ-などの設計されたそれは注目に値すること総感光面積は、検出器のための84.32ミリメートル2です。 </li><li>露光手順の後、ピンセットで試料をクリップし、その後希釈現像液に浸す35の開発のサンプルを取得するために左右に振る行動から（現像液の50 mlの脱イオン水150mlを混合）。 </li><li> DI水を用いて開発されたサンプルを洗浄し、窒素ガスで乾燥しました。 </li><li>無傷のパターンを確認するために、光学顕微鏡を使用してください。ない場合は、フォトレジストを除去するためにアセトンを使用し、完全なパターンが得られるまで繰り返して、4.7に4.2を繰り返します。 </li><li>ハード20分間120°Cのでサンプルを焼きます。 </li></ol><ol><li>化学リフトオフ手順に進む前に開発されたサンプルの上に薄い導電性のPt層（100 nm）を堆積させるために、RFマグネトロンスパッタ装置を使用してください。 </li><li> 13ミリメートルで、ターゲットと基板との間の距離を設定します。 </li><li> 5ミリトールの低真空に到達するために機械式ポンプを使用してください。 </li><li>その後、7×10 -7 Torrの高真空を得るために、ターボポンプを使用しています。 </li><li>チャンバーは高真空になるまで待って、ターボポンプを閉じて、その後、機械式ポンプを開きます。 </li><li>チャンバ圧力は、100ミリトールの作動圧力に達するまでMAS流量コントローラによってチャンバに0.3ミリリットル/秒でアルゴンガスを流します。 </li><li>電源を放電し、25分間試料上にPt薄膜電極をスパッタリングするために15 WのDC電力を設定直流（DC）電源をオンにします。 </li><li> Pt電極層は、マグネトロンsputtによって堆積された後方法をering、チャンバーから試料を取り出します。 </li><li>フォトレジストを除去するために超音波洗浄器による化学リフトオフアセトン液にサンプルを浸し。 </li><li>徹底的にフォトレジストを除去するために1分で洗浄時間を設定し、ZnO薄膜上に櫛型状のPt電極を得ます。 </li></ol> 6. RTA処理<ol><li> RTAシステムにとして製作のPt / ZnOのサンプルを置きます。 </li><li> 20ミリトールにRTAチャンバの圧力をポンプダウンする機械式ポンプとゲートバルブを使用してください。 </li><li>チャンバ圧力は20ミリトールに到達するまで、チャンバ内に0.3ミリリットル/秒でアルゴンガスを流入し、5トルの作動圧を設定待ちます。 </li><li>次に、100°C / minと加熱速度を設定します。 </li><li>その後、10分間450 O Cでサンプルをアニール。 </li><li>アニールした後、サンプルを室温に冷却するまで、サンプルを取り出して待ちます。 </li></ol>

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Lett. 79, 943-945 (2001).</li><li>Koida, T., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Radiative+and+nonradiative+excitonic+transitions+in+nonpolar+(110)+and+polar+(000)+and+(0001)+ZnO+epilayers.">Radiative and nonradiative excitonic transitions in nonpolar (110) and polar (000) and (0001) ZnO epilayers.</a> Appl. Phys. Lett. 84 (110), 1079 (2004).</li></ol>

The authors declare that they have no competing financial interests.

重要なステップや修正ステップ1では、基板は完全に洗浄し、1.3〜1.5は、基板にはグリースや有機及び無機の汚染がないことを確認するために、続いて、ステップする必要があります。基板表面上の油脂、又は有機及び無機の汚染を大幅に膜の密着性が低下します。 ステップ2は、ZnO膜の製造工程の前に最も重要な手順です。 DEZnを、非常に毒性があり...

ZnOのは、そのようなRTと大きな励起子で高い化学的安定性、低コスト、非毒性、光ポンピングのための低電力しきい値、広い直接バンドギャップ（3.37 eV）でなど、そのユニークな特性のために有望なワイドバンドギャップ機能半導体材料であります〜60 meVで1-2の結合エネルギー。近年、酸化亜鉛薄膜は、透明導電性酸化物（TCO）フィルム、青色発光素子、電界効果トランジスタ、及びガスセンサ3-6を含む多くの応用分野において使用されています。その一方で、ZnOは、インジウムとスズの希少かつ高価であるために、インジウムスズ酸化物（ITO）を置換する候補物質です。さらに、ZnOは、可視波長領域とITO膜7-8と比べて低抵抗で高い光透過率を有しています。したがって、ZnOを製造、特性評価およびアプリケーションは広く報告されています。この本研究では、簡単なANにより高い C -軸（0002）のZnO薄膜を合成することに焦点を当てて効果的方法とUV光検出器に向けて実用化dは。 最近の研究レポートの所見は、高品質のZnO薄膜は、ゾル-ゲル法、高周波マグネトロンスパッタリング、有機金属化学気相成長（MOCVD）などの様々な技術によって、など9-14で合成することができることを示しています。それぞれの技術は、その利点と欠点があります。例えば、スパッタ成膜の主な利点は、非常に高い融点を有するそのターゲット材料が楽基板上にスパッタリングされています。対照的に、スパッタリング法は、フィルムを構成するためのリフトオフと結合することは困難です。我々の研究では、プラズマ強化化学蒸着（PECVD）システムは、高品質のC -軸のZnO薄膜を合成するために使用しました。プラズマ衝撃は、薄膜の密度を増加させ、イオンの分解反応速度を高めることができる15の合成工程における重要な要因です。におけるまた、高い成長速度および大面積の均一な堆積は、PECVD法のための他の特徴的な利点です。 合成技術を除いて、基板上の良好な接着性は、別の問題であると認めて。 ZnOとサファイアは同じ六方格子構造を有しているので、多くの研究では、Cの -planeサファイアが広く高 Cγ軸のZnO薄膜を合成するための基質として使用されてきました。しかし、酸化亜鉛は、粗い表面形態及び面内方向16に配向したZnO と C -planeサファイア（18％）の間の大きな格子ミスフィットに起因する高い残留（欠陥に関連する）のキャリア濃度を示すサファイア基板上に合成しました。サファイア基板に比べて、Siウエハは、ZnOの合成のための他の広く使用されている基板です。 Siウエハが広く、半導体産業で使用されてきました。したがって、Si基板上に高品質のZnO薄膜の成長は非常に重要であるとnecesSARY。残念なことに、ZnOとSiの結晶構造および熱膨張係数は、結晶品質の劣化につながる明らかに異なっています。過去10年間、多大な努力は、ZnOバッファ層17、種々のガス雰囲気18中のアニーリング、及びSi基板の表面19の不動態化を含む様々な方法を用いて、Si基板上へのZnO薄膜の品質を改善するためになされています。本研究は、成功した任意のバッファ層または前処理することなく、Si基板上に高 C -軸ZnO薄膜を合成するための簡単かつ効果的方法を提供します。実験結果は、最適な成長温度の下で合成されたZnO薄膜は良好な結晶および光学的特性を示したことが示されました。結晶構造、RFプラズマ組成、表面形態、及びZnO薄膜の光学特性は、X線回折（XRD）、光学発光分光法（OES）、電界放出SCにより調べましたそれぞれの電子顕微鏡（FE-SEM）、及びRTのフォトルミネッセンス（PL）スペクトルをアニング。また、酸化亜鉛薄膜の透過率も確認及び報告されました。 合成されたZnO薄膜は、UV光検出器用途のための感知層はまた、本研究で検討したように機能しました。 UV光検出器は、UV監視、光スイッチ、火炎警報、およびミサイル加温システム20-21に大きな潜在的な用途があります。このようなオーミックコンタクトとショットキーコンタクトを含む正の固有負（PIN）モードおよび金属 - 半導体 - 金属（MSM）構造として実施された光検出器の多くの種類があります。各タイプは、それ自身の利点と欠点を有します。現在、MSM光検出器構造は、その優れた応答性、信頼性、応答性能と回復時間22〜24に集中的な関心を集めています。ここに示す結果はMSMオーミック接触モードを使用したことを示していますZnO薄膜ベースのUV光検出器を作製しました。光検出器のような種類は、典型的には、 高い Cγ軸ZnO薄膜は、UV光検出器に適した検出層であることを示し、良好な応答性と信頼性を明らかにする。

<table><tbody><tr><td>RF power supply</td><td>ADVANCED ENERGY</td><td>RFX-600</td><td></td></tr><tr><td>Butterfly valve</td><td>MKS</td><td>253B-1-40-1</td><td></td></tr><tr><td>Mass flow controller</td><td>PROTEC INSTRUMENTS</td><td>PC-540</td><td></td></tr><tr><td>Pressure controller</td><td>MKS</td><td>600 series&amp;nbsp;</td><td></td></tr><tr><td>Heater</td><td>UPGRADE INSTRUMENT CO.</td><td>UI-TC 3001</td><td></td></tr><tr><td>Sputter gun</td><td>AJA INTERNATIONAL</td><td>A320-HA</td><td></td></tr><tr><td>DEZn 1.5M</td><td>ACROS ORGANIC USA, New Jersey</td><td></td><td>also called Diethylzinc (C2H5)2Zn</td></tr><tr><td>Spin coater&amp;nbsp;</td><td>SWIENCO</td><td>PW - 490</td><td></td></tr><tr><td>I-V measurement</td><td>Keithley</td><td>Model: 2400</td><td></td></tr><tr><td>Photocondutive measurement&amp;nbsp;</td><td>Home-built</td><td></td><td></td></tr><tr><td>UV light sourse</td><td>Panasonic</td><td>ANUJ 6160</td><td></td></tr><tr><td>Mask aligner</td><td>Karl Suss</td><td>MJB4</td><td></td></tr><tr><td>Photoresist</td><td>Shipley a Rohm &amp;amp; Haas company</td><td>S1813</td><td></td></tr><tr><td>Developer</td><td>Shipley a Rohm &amp;amp; Haas company</td><td>MF319</td><td></td></tr><tr><td>Silicon wafer</td><td>E-Light Technology Inc</td><td>12/0801</td><td></td></tr><tr><td>Glass substrate</td><td>CORNING</td><td>1737</td><td>P-type / Boron</td></tr></tbody></table>

synthesis and characterization of high c-axis zno thin film by plasma enhanced chemical vapor deposition system and its uv photodetector application

本研究では、 高 Cγ軸（0002）優先配向した酸化亜鉛（ZnO）薄膜を正常かつ効率的にプラズマ化学気相堆積（PECVD）システムを用いて、異なる合成温度を介してシリコン（Si）基板上に合成されています。異なる合成結晶構造上の温度、表面形態および光学的特性の影響が検討されています。 X線回折（XRD）パターンは（0002）回折ピークの強度は400 O C.まで増大合成温度に強くなったことを示し（0002）の回折強度ピークが徐々に（10-10）の出現に伴って弱くなった400 O Cの過剰に合成された温度上昇などの回折ピークRTのフォトルミネッセンス（PL）スペクトルは、強い近接バンド端の周りに375 nmで観察した（NBE）排出し、約575 nmのウントに位置無視できる深いレベル（DL）の発光を示しましたER 高 C -軸のZnO薄膜。電界放出走査電子顕微鏡（FE-SEM）画像は、均一な表面を明らかにし、小さな粒子サイズ分布を有します。 ZnOの薄膜はまた、透過率を測定するために同じパラメータの下でガラス基板上に合成されています。 紫外線（UV）光検出器用途のために、櫛型白金（Pt）薄膜（厚さ約100 nm）は、従来の光リソグラフィプロセスを介して製造され、無線周波数（RF）マグネトロンスパッタリング。オーム接触を達成するために、デバイスは、10分間の急速熱アニーリング（RTA）システム450によって、O℃でアルゴン状況でアニールしました。体系的な測定の後に、電流-電圧（I - V）写真、暗電流の曲線および時間依存性の光電流応答の結果は、高Cγ軸ZnO薄膜は、適切な感知層であることを示し、良好な応答性と信頼性を示しました紫外線光検出器アプリケーション用。

高いcは a軸配向性を有する酸化亜鉛（0002）薄膜が正常PECVD装置を用いてSi基板上に合成されています。二酸化炭素（CO 2）及びジエチル亜鉛（DEZnを）は、それぞれ、酸素や亜鉛の前駆体として使用しました。酸化亜鉛薄膜の結晶構造は、ZnO薄膜が最も強い（0002）回折ピーク400 O Cで合成したことを示す、X線回折（図4）によって特徴付けました。合成温度は50...

Watch this Scientific Journal Video about Synthesis and Characterization of High c-axis ZnO Thin Film by Plasma Enhanced Chemical Vapor Deposition System and its UV Photodetector Application at JoVE.c

Synthesis and Characterization of High c-axis ZnO Thin Film by Plasma Enhanced Chemical Vapor Deposition System and its UV Photodetector Application

We offered a method to directly synthesize high c-axis (0002) ZnO thin film by plasma enhanced chemical vapor deposition. The as-synthesized ZnO thin film combined with Pt interdigitated electrode was used as sensing layer for ultraviolet photodetector, showing a high performance through a combination of its good responsivity and reliability.

プラズマによる高c軸ZnO薄膜の合成とキャラクタリゼーションは、化学気相堆積システムとそのUV光検出器アプリケーションを強化しました

In this study, zinc oxide (ZnO) thin films with high c-axis (0002) preferential orientation have been successfully and effectively synthesized onto ...

synthesis-characterization-high-c-axis-zno-thin-film-plasma-enhanced

Universidad de Cartagena UDEC

Research

JoVE Journal

Engineering

15.2K ビュー.  National Taipei University of Technology (TAIPEI TECH). We offered a method to directly synthesize high c-axis (0002) ZnO thin film by plasma enhanced chemical vapor deposition. The as-synthesized ZnO thin film combined with Pt interdigitated electrode was used as sensing layer for ultraviolet photodetector, showing a high performance through a combination of its good responsivity and reliability.

ビデオ: Synthesis and Characterization of High c-axis ZnO Thin Film by Plasma Enhanced Chemical Vapor Deposition System and its UV Photodetector Application

Polycrystalline Silicon Thin-film Solar cells with Plasmonic-enhanced Light-trapping

One of major approaches to cheaper solar cells is reducing the amount of semiconductor material used for their fabrication and making cells thinner. To compensate for lower light absorption such physically thin devices have to incorporate light-trapping which increases their optical thickness. Light scattering by textured surfaces is a common technique but it cannot be universally applied to all solar cell technologies. Some cells, for example those made of evaporated silicon, are planar as produced and they require an alternative light-trapping means suitable for planar devices. Metal nanoparticles formed on planar silicon cell surface and capable of light scattering due to surface plasmon resonance is an effective approach.
The paper presents a fabrication procedure of evaporated polycrystalline silicon solar cells with plasmonic light-trapping and demonstrates how the cell quantum efficiency improves due to presence of metal nanoparticles.
To fabricate the cells a film consisting of alternative boron and phosphorous doped silicon layers is deposited on glass substrate by electron beam evaporation. An Initially amorphous film is crystallised and electronic defects are mitigated by annealing and hydrogen passivation. Metal grid contacts are applied to the layers of opposite polarity to extract electricity generated by the cell. Typically, such a ~2 &mu;m thick cell has a short-circuit current density (Jsc) of 14-16 mA/cm2, which can be increased up to 17-18 mA/cm2 (~25% higher) after application of a simple diffuse back reflector made of a white paint.
To implement plasmonic light-trapping a silver nanoparticle array is formed on the metallised cell silicon surface. A precursor silver film is deposited on the cell by thermal evaporation and annealed at 23&deg;C to form silver nanoparticles. Nanoparticle size and coverage, which affect plasmonic light-scattering, can be tuned for enhanced cell performance by varying the precursor film thickness and its annealing conditions. An optimised nanoparticle array alone results in cell Jsc enhancement of about 28%, similar to the effect of the diffuse reflector. The photocurrent can be further increased by coating the nanoparticles by a low refractive index dielectric, like MgF2, and applying the diffused reflector. The complete plasmonic cell structure comprises the polycrystalline silicon film, a silver nanoparticle array, a layer of MgF2, and a diffuse reflector. The Jsc for such cell is 21-23 mA/cm2, up to 45% higher than Jsc of the original cell without light-trapping or ~25% higher than Jsc for the cell with the diffuse reflector only.
Introduction
Light-trapping in silicon solar cells is commonly achieved via light scattering at textured interfaces. Scattered light travels through a cell at oblique angles for a longer distance and when such angles exceed the critical angle at the cell interfaces the light is permanently trapped in the cell by total internal reflection (Animation 1: Light-trapping). Although this scheme works well for most solar cells, there are developing technologies where ultra-thin Si layers are produced planar (e.g. layer-transfer technologies and epitaxial c-Si layers) 1 and or when such layers are not compatible with textures substrates (e.g. evaporated silicon) 2. For such originally planar Si layer alternative light trapping approaches, such as diffuse white paint reflector 3, silicon plasma texturing 4 or high refractive index nanoparticle reflector 5 have been suggested.
Metal nanoparticles can effectively scatter incident light into a higher refractive index material, like silicon, due to the surface plasmon resonance effect 6. They also can be easily formed on the planar silicon cell surface thus offering a light-trapping approach alternative to texturing. For a nanoparticle located at the air-silicon interface the scattered light fraction coupled into silicon exceeds 95% and a large faction of that light is scattered at angles above critical providing nearly ideal light-trapping condition (Animation 2: Plasmons on NP). The resonance can be tuned to the wavelength region, which is most important for a particular cell material and design, by varying the nanoparticle average size, surface coverage and local dielectric environment 6,7. Theoretical design principles of plasmonic nanoparticle solar cells have been suggested 8. In practice, Ag nanoparticle array is an ideal light-trapping partner for poly-Si thin-film solar cells because most of these design principle are naturally met. The simplest way of forming nanoparticles by thermal annealing of a thin precursor Ag film results in a random array with a relatively wide size and shape distribution, which is particularly suitable for light-trapping because such an array has a wide resonance peak, covering the wavelength range of 700-900 nm, important for poly-Si solar cell performance. The nanoparticle array can only be located on the rear poly-Si cell surface thus avoiding destructive interference between incident and scattered light which occurs for front-located nanoparticles 9. Moreover, poly-Si thin-film cells do not requires a passivating layer and the flat base-shaped nanoparticles (that naturally result from thermal annealing of a metal film) can be directly placed on silicon further increases plasmonic scattering efficiency due to surface plasmon-polariton resonance 10.
The cell with the plasmonic nanoparticle array as described above can have a photocurrent about 28% higher than the original cell. However, the array still transmits a significant amount of light which escapes through the rear of the cell and does not contribute into the current. This loss can be mitigated by adding a rear reflector to allow catching transmitted light and re-directing it back to the cell. Providing sufficient distance between the reflector and the nanoparticles (a few hundred nanometers) the reflected light will then experience one more plasmonic scattering event while passing through the nanoparticle array on re-entering the cell and the reflector itself can be made diffuse - both effects further facilitating light scattering and hence light-trapping. Importantly, the Ag nanoparticles have to be encapsulated with an inert and low refractive index dielectric, like MgF2 or SiO2, from the rear reflector to avoid mechanical and chemical damage 7. Low refractive index for this cladding layer is required to maintain a high coupling fraction into silicon and larger scattering angles, which are ensured by the high optical contrast between the media on both sides of the nanoparticle, silicon and dielectric 6. The photocurrent of the plasmonic cell with the diffuse rear reflector can be up to 45% higher than the current of the original cell or up to 25% higher than the current of an equivalent cell with the diffuse reflector only.

Polycrystalline silicon thin-film solar cells on glass are fabricated by deposition of boron and phosphorous doped silicon layers followed by crystallisation, defect passivation and metallisation. Plasmonic light-trapping is introduced by forming Ag nanoparticles on the silicon cell surface capped with a diffused reflector resulting in ~45% photocurrent enhancement.

プラズモニック·強化されたライトトラップによる多結晶シリコン薄膜太陽電池

One of major approaches to cheaper solar cells is reducing the amount of semiconductor material used for their fabrication and making cells thinner. To ...

工学

Fabrication of Nano-engineered Transparent Conducting Oxides by Pulsed Laser Deposition

Nanosecond Pulsed Laser Deposition (PLD) in the presence of a background gas allows the deposition of metal oxides with tunable morphology, structure, density and stoichiometry by a proper control of the plasma plume expansion dynamics. Such versatility can be exploited to produce nanostructured films from compact and dense to nanoporous characterized by a hierarchical assembly of nano-sized clusters. In particular we describe the detailed methodology to fabricate two types of Al-doped ZnO (AZO) films as transparent electrodes in photovoltaic devices: 1) at low O2 pressure, compact films with electrical conductivity and optical transparency close to the state of the art transparent conducting oxides (TCO) can be deposited at room temperature, to be compatible with thermally sensitive materials such as polymers used in organic photovoltaics (OPVs); 2) highly light scattering hierarchical structures resembling a forest of nano-trees are produced at higher pressures. Such structures show high Haze factor (&gt;80%) and may be exploited to enhance the light trapping capability. The method here described for AZO films can be applied to other metal oxides relevant for technological applications such as TiO2, Al2O3, WO3 and Ag4O4.

We describe the experimental method to deposit nanostructured oxide thin films by nanosecond Pulsed Laser Deposition (PLD) in the presence of a background gas. By using this method Al-doped ZnO (AZO) films, from compact to hierarchically structured as nano-tree forests, can be deposited.

パルスレーザー蒸着法によるナノエンジニアリング透明導電性酸化物の作製

Nanosecond Pulsed  Laser Deposition (PLD) in the presence of a background gas allows the deposition  of metal oxides with tunable morphology, structure, ...

Preparation and Use of Photocatalytically Active Segmented Ag|ZnO and Coaxial TiO2-Ag Nanowires Made by Templated Electrodeposition

Photocatalytically active nanostructures require a large specific surface area with the presence of many catalytically active sites for the oxidation and reduction half reactions, and fast electron (hole) diffusion and charge separation. Nanowires present suitable architectures to meet these requirements. Axially segmented Ag|ZnO and radially segmented (coaxial) TiO2-Ag nanowires with a diameter of 200 nm and a length of 6-20 &#181;m were made by templated electrodeposition within the pores of polycarbonate track-etched (PCTE) or anodized aluminum oxide (AAO) membranes, respectively. In the photocatalytic experiments, the ZnO and TiO2 phases acted as photoanodes, and Ag as cathode. No external circuit is needed to connect both electrodes, which is a key advantage over conventional photo-electrochemical cells. For making segmented Ag|ZnO nanowires, the Ag salt electrolyte was replaced after formation of the Ag segment to form a ZnO segment attached to the Ag segment. For making coaxial TiO2-Ag nanowires, a TiO2 gel was first formed by the electrochemically induced sol-gel method. Drying and thermal annealing of the as-formed TiO2 gel resulted in the formation of crystalline TiO2 nanotubes. A subsequent Ag electrodeposition step inside the TiO2 nanotubes resulted in formation of coaxial TiO2-Ag nanowires. Due to the combination of an n-type semiconductor (ZnO or TiO2) and a metal (Ag) within the same nanowire, a Schottky barrier was created at the interface between the phases. To demonstrate the photocatalytic activity of these nanowires, the Ag|ZnO nanowires were used in a photocatalytic experiment in which H2 gas was detected upon UV illumination of the nanowires dispersed in a methanol/water mixture. After 17 min&#160;of illumination, approximately 0.2 vol% H2 gas was detected from a suspension of ~0.1 g of Ag|ZnO nanowires in a 50 ml 80 vol% aqueous methanol solution.

Preparation and Use of Photocatalytically Active Segmented Ag|ZnO and Coaxial TiO2-Ag Nanowires Made by Templated Electrodeposition

Procedures are outlined to prepare segmented and coaxial nanowires via templated electrodeposition in nanopores. As examples, segmented nanowires consisting of Ag and ZnO segments, and coaxial nanowires consisting of a TiO2 shell and a Ag core were made. The nanowires were used in photocatalytic hydrogen formation experiments.

ZnOと同軸のTiO |光触媒活性セグメント化銀の調製および使用<sub&gt; 2</subテンプレート化電製&gt; - 銀ナノワイヤー

Photocatalytically active nanostructures require a large specific surface area with the presence of many catalytically active sites for the oxidation and ...

Improved Heterojunction Quality in Cu2O-based Solar Cells Through the Optimization of Atmospheric Pressure Spatial Atomic Layer Deposited Zn1-xMgxO

Atmospheric pressure spatial atomic layer deposition (AP-SALD) was used to deposit n-type ZnO and Zn1-xMgxO thin films onto p-type thermally oxidized Cu2O substrates outside vacuum at low temperature. The performance of photovoltaic devices featuring atmospherically fabricated ZnO/Cu2O heterojunction was dependent on the conditions of AP-SALD film deposition, namely, the substrate temperature and deposition time, as well as on the Cu2O substrate exposure to oxidizing agents prior to and during the ZnO deposition. Superficial Cu2O to CuO oxidation was identified as a limiting factor to heterojunction quality due to recombination at the ZnO/Cu2O interface. Optimization of AP-SALD conditions as well as keeping Cu2O away from air and moisture in order to minimize Cu2O surface oxidation led to improved device performance. A three-fold increase in the open-circuit voltage (up to 0.65 V) and a two-fold increase in the short-circuit current density produced solar cells with a record 2.2% power conversion efficiency (PCE). This PCE is the highest reported for a Zn1-xMgxO/Cu2O heterojunction formed outside vacuum, which highlights atmospheric pressure spatial ALD as a promising technique for inexpensive and scalable fabrication of Cu2O-based photovoltaics.

Improved Heterojunction Quality in Cu2O-based Solar Cells Through the Optimization of Atmospheric Pressure Spatial Atomic Layer Deposited Zn1-xMgxO

Here we present a protocol for synthesizing Zn1-xMgxO/Cu2O heterojunctions in open-air at low temperature via atmospheric pressure spatial atomic layer deposition (AP-SALD) of Zn1-xMgxO on cuprous oxide. Such high quality conformal metal oxides can be grown on a variety of substrates including plastics by this cheap and scalable method.

銅で改善されたヘテロ接合品質<sub&gt; 2</sub析出した大気圧空間原子層の最適化により&gt; O系太陽電池<br /&gt; Znの<sub&gt; 1-xの</sub&gt; Mgの<sub&gt; X</sub&gt; O

Atmospheric pressure spatial atomic layer deposition (AP-SALD) was used to deposit n-type ZnO and Zn1-xMgxO thin films onto p-type thermally oxidized Cu2O ...

化学

Synthesis of Hierarchical ZnO/CdSSe Heterostructure Nanotrees

A two-step chemical vapor deposition procedure is here employed to prepare tree-like hierarchical ZnO/CdSSe hetero-nanostructures. The structures are composed of CdSSe branches grown on ZnO nanowires that are vertically aligned on a transparent sapphire substrate. The morphology was measured via scanning electron microscopy. The crystal structure was determined by X-ray powder diffraction analysis. Both the ZnO stem and CdSSe branches have a predominantly wurtzite crystal structure. The mole ratio of S and Se in the CdSSe branches was measured by energy dispersive X-ray spectroscopy. The CdSSe branches result in strong visible light absorption. Photoluminescence (PL) spectroscopy showed that the stem and branches form a type-II heterojunction. PL lifetime measurements showed a decrease in the lifetime of emission from the trees when compared to emission from individual ZnO stems or CdSSe branches and indicate fast charge transfer between CdSSe and ZnO. The vertically aligned ZnO stems provide a direct electron transport pathway to the substrate and allow for efficient charge separation after photoexcitation by visible light. The combination of the abovementioned properties makes ZnO/CdSSe nanotrees promising candidates for applications in solar cells, photocatalysis, and opto-electronic devices.

Here, we prepare and characterize novel tree-like hierarchical ZnO/CdSSe nanostructures, where CdSSe branches are grown on vertically aligned ZnO nanowires. The resulting nanotrees are a potential material for solar energy conversion and other opto-electronic devices.

階層型のZnO / CdSSe等ヘテロNanotreesの合成

A two-step chemical vapor deposition procedure is here employed to prepare tree-like hierarchical ZnO/CdSSe hetero-nanostructures. The structures are ...

Aerosol-assisted Chemical Vapor Deposition of Metal Oxide Structures: Zinc Oxide Rods

Whilst columnar zinc oxide (ZnO) structures in the form of rods or wires have been synthesized previously by different liquid- or vapor-phase routes, their high cost production and/or incompatibility with microfabrication technologies, due to the use of pre-deposited catalyst-seeds and/or high processing temperatures exceeding 900 &#176;C, represent a drawback for a widespread use of these methods. Here, however, we report the synthesis of ZnO rods via a non-catalyzed vapor-solid mechanism enabled by using an aerosol-assisted chemical vapor deposition (CVD) method at 400 &#176;C with zinc chloride (ZnCl2) as the precursor and ethanol as the carrier solvent. This method provides both single-step formation of ZnO rods and the possibility of their direct integration with various substrate types, including silicon, silicon-based micromachined platforms, quartz, or high heat resistant polymers. This potentially facilitates the use of this method at a large-scale, due to its compatibility with state-of-the-art microfabrication processes for device manufacture. This report also describes the properties of these structures (e.g., morphology, crystalline phase, optical band gap, chemical composition, electrical resistance) and validates its gas sensing functionality towards carbon monoxide.

Columnar zinc oxide structures in the form of rods are synthesized via aerosol-assisted chemical vapor deposition without the use of pre-deposited catalyst-seed particles. This method is scalable and compatible with various substrates based on either silicon, quartz or polymers.

エアロゾルによる金属酸化物の構造の化学蒸着: 酸化亜鉛棒

Whilst columnar zinc oxide (ZnO) structures in the form of rods or wires have been synthesized previously by different liquid- or vapor-phase routes, ...

Well-aligned Vertically Oriented ZnO Nanorod Arrays and their Application in Inverted Small Molecule Solar Cells

This manuscript describes how to design and fabricate efficient inverted solar cells, which are based on a two-dimensional conjugated small molecule (SMPV1) and [6,6]-phenyl-C71-butyric acid methyl ester (PC71BM), by utilizing ZnO nanorods (NRs) grown on a high quality Al-doped ZnO (AZO) seed layer. The inverted SMPV1:PC71BM solar cells with ZnO NRs that grew on both a sputtered and sol-gel processed AZO seed layer are fabricated. Compared with the AZO thin film prepared by the sol-gel method, the sputtered AZO thin film exhibits better crystallization and lower surface roughness, according to X-ray diffraction (XRD) and atomic force microscope (AFM) measurements. The orientation of the ZnO NRs grown on a sputtered AZO seed layer shows better vertical alignment, which is beneficial for the deposition of the subsequent active layer, forming better surface morphologies. Generally, the surface morphology of the active layer mainly dominates the fill factor (FF) of the devices. Consequently, the well-aligned ZnO NRs can be used to improve the carrier collection of the active layer and to increase the FF of the solar cells. Moreover, as an anti-reflection structure, it can also be utilized to enhance the light harvesting of the absorption layer, with the power conversion efficiency (PCE) of solar cells reaching 6.01%, higher than the sol-gel based solar cells with an efficiency of 4.74%.

This manuscript describes how to design and fabricate efficient inverted SMPV1:PC71BM solar cells with ZnO nanorods (NRs) grown on a high quality Al-doped ZnO (AZO) seed layer. The well-aligned vertically oriented ZnO NRs exhibit high crystalline properties. The power conversion efficiency of solar cells can reach 6.01%.

整列垂直方向に配向 ZnO ナノロッド配列と反転小さな分子の太陽電池の応用

This manuscript describes how to design and fabricate efficient inverted solar cells, which are based on a two-dimensional conjugated small molecule ...

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Heterostructure field effect transistors (HFETs) utilizing a two dimensional electron gas (2DEG) channel have a great potential for high speed device applications. Zinc oxide (ZnO), a semiconductor with a wide bandgap (3.4 eV) and high electron saturation velocity has gained a great deal of attention as an attractive material for high speed devices. Efficient gate modulation, however, requires high-quality Schottky contacts on the barrier layer. In this article, we present our Schottky diode fabrication procedure on Zn-polar BeMgZnO/ZnO heterostructure with high density 2DEG which is achieved through strain modulation and incorporation of a few percent Be into the MgZnO-based barrier during growth by molecular beam epitaxy (MBE). To achieve high crystalline quality, nearly lattice-matched high-resistivity GaN templates grown by metal-organic chemical vapor deposition (MOCVD) are used as the substrate for the subsequent MBE growth of the oxide layers. To obtain the requisite Zn-polarity, careful surface treatment of GaN templates and control over the VI/II ratio during the growth of low temperature ZnO nucleation layer are utilized. Ti/Au electrodes serve as Ohmic contacts, and Ag electrodes deposited on the O2 plasma pretreated BeMgZnO surface are used for Schottky contacts.

Attainment of high-quality Schottky contacts is imperative for achieving efficient gate modulation in heterostructure field effect transistors (HFETs). We present the fabrication methodology and characteristics of Schottky diodes on Zn-polar BeMgZnO/ZnO heterostructures with high-density two dimensional electron gas (2DEG), grown by plasma-assisted molecular beam epitaxy on GaN templates.

プラズマ援用分子線エピタキシー法により成長した Zn 極性 ZnO/BeMgZnO へテロ構造をショットキー ダイオードの作製

Heterostructure field effect transistors (HFETs) utilizing a two dimensional electron gas (2DEG) channel have a great potential for high speed device ...

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors

Aluminum-oxide (Al2O3) is a low cost, easily processable and high dielectric constant insulating material that is particularly appropriate for use as the dielectric layer of thin-film transistors (TFTs). Growth of aluminum-oxide layers from anodization of metallic aluminum films is greatly advantageous when compared to sophisticated processes such as atomic layer deposition (ALD) or deposition methods that demand relatively high temperatures (above 300 &#176;C) such as aqueous combustion or spray-pyrolysis. However, the electrical properties of the transistors are highly dependent on the presence of defects and localized states at the semiconductor/dielectric interface, which are strongly affected by the manufacturing parameters of the anodized dielectric layer. To determine how several fabrication parameters influence the device performance without performing all possible combination of factors, we used a reduced factorial analysis based on a Plackett-Burman design of experiments (DOE). The choice of this DOE permits the use of only 12 experimental runs of combinations of factors (instead of all 256 possibilities) to obtain the optimized device performance. The ranking of the factors by the effect on device responses such as the TFT mobility is possible by applying analysis of variance (ANOVA) to the obtained results.

Anodization parameters for growth of the aluminum-oxide dielectric layer of zinc-oxide thin-film transistors (TFTs) are varied to determine the effects on the electrical parameter responses. Analysis of variance (ANOVA) is applied to a Plackett-Burman design of experiments (DOE) to determine the manufacturing conditions that result in optimized device performance.

薄膜トランジスタの酸化アルミニウム誘電体層に及ぼす陽極化パラメータの効果

Aluminum-oxide (Al2O3) is a low cost, easily processable and high dielectric constant insulating material that is particularly appropriate for use as the ...

Metal Oxide Heterojunction for Photocatalytic Activities

There is a significant global demand for improvements in synthesis techniques and their optimal characteristics, especially for industrial-scale applications. Sol-gel-based solution combustion synthesis (SG-SCS) is a simple method to produce ordered porous materials. In this regard, Pearson&#39;s hard and soft acids and bases theory assists in selecting host-dopant reactivity to form a proper heterojunction.
The formation of a heterojunction also changes the essential properties of the materials, improving photocatalysis via charge transfer or synergistic activities. A calcination temperature of 500 &#176;C is ideal for this process based on the results of the stability assessment via a differential thermogravimetry ratio analysis (DTG).
The nanoscale dimensions of the nanoparticles (NPs) and nanocomposites (NCs) generated were validated using X-ray diffraction and high-resolution transmission electron microscopy (HRTEM). Furthermore, the scanning electron microscopy micrographs and BET analyses confirmed the porosity nature of the materials. HRTEM, X-ray photoelectron spectroscopy, and energy-dispersive X-ray investigations established the materials composition. The study found that NCs degraded the acid orange 8 (AO8) color more efficiently than bare ZnO.

The development of a heterojunction boosts the photocatalytic activities of solution combustion synthesis, which is a time-/energy-efficient process. Advanced analytical characterization techniques were used in this protocol to evaluate the materials&#39; characteristics, and nanocomposites demonstrated improved acid orange-8 dye degradation.

プラズマによる高c軸ZnO薄膜の合成とキャラクタリゼーションは、化学気相堆積システムとそのUV光検出器アプリケーションを強化しました

要約

さらに動画を探す

この動画の章

プラズモニック·強化されたライトトラップによる多結晶シリコン薄膜太陽電池

パルスレーザー蒸着法によるナノエンジニアリング透明導電性酸化物の作製

ZnOと同軸のTiO |光触媒活性セグメント化銀の調製および使用

銅で改善されたヘテロ接合品質

階層型のZnO / CdSSe等ヘテロNanotreesの合成

エアロゾルによる金属酸化物の構造の化学蒸着: 酸化亜鉛棒

整列垂直方向に配向 ZnO ナノロッド配列と反転小さな分子の太陽電池の応用

プラズマ援用分子線エピタキシー法により成長した Zn 極性 ZnO/BeMgZnO へテロ構造をショットキーダイオードの作製

薄膜トランジスタの酸化アルミニウム誘電体層に及ぼす陽極化パラメータの効果

Metal Oxide Heterojunction for Photocatalytic Activities

プラズマによる高c軸ZnO薄膜の合成とキャラクタリゼーションは、化学気相堆積システムとそのUV光検出器アプリケーションを強化しました

要約

さらに動画を探す

この動画の章

プラズモニック·強化されたライトトラップによる多結晶シリコン薄膜太陽電池

パルスレーザー蒸着法によるナノエンジニアリング透明導電性酸化物の作製

ZnOと同軸のTiO |光触媒活性セグメント化銀の調製および使用

銅で改善されたヘテロ接合品質

階層型のZnO / CdSSe等ヘテロNanotreesの合成

エアロゾルによる金属酸化物の構造の化学蒸着: 酸化亜鉛棒

整列垂直方向に配向 ZnO ナノロッド配列と反転小さな分子の太陽電池の応用

プラズマ援用分子線エピタキシー法により成長した Zn 極性 ZnO/BeMgZnO へテロ構造をショットキー ダイオードの作製

薄膜トランジスタの酸化アルミニウム誘電体層に及ぼす陽極化パラメータの効果

Metal Oxide Heterojunction for Photocatalytic Activities

プラズマ援用分子線エピタキシー法により成長した Zn 極性 ZnO/BeMgZnO へテロ構造をショットキーダイオードの作製