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第10 章

半導体の基礎

半導体の基礎
半導体の基礎
Solids are composed of atoms with distinct electronic configurations and energy levels. When two identical isolated atoms are brought close together, ...
半導体の基礎
半導体の基礎
Materials are broadly categorized into three types as metals, insulators, and semiconductors. Metals have no energy band gap due to the overlap of the ...
半導体の基礎
半導体の基礎
A pure silicon wafer used in integrated circuits is an intrinsic semiconductor that lacks impurities and exhibits low electrical conductivity. At zero ...
半導体の基礎
半導体の基礎
Carrier generation refers to the creation of electron-hole pairs. Band-to-band generation occurs in direct band gap semiconductors via thermal excitation ...
半導体の基礎
半導体の基礎
Carrier transport in semiconductors generates current, through drift and diffusion mechanisms. Drift current arises when an external electric field causes ...
半導体の基礎
半導体の基礎
Solar streetlights function independently without the requirement of an external power supply, as they contain p-n junctions within their solar cells. A ...
pn接合のバイアス
pn接合のバイアス
The p-n junction within an LED requires external biasing to produce light. Forward biasing involves applying a voltage across the p-n junction with the ...
金属-半導体接合
金属-半導体接合
Contact between a Metal and a semiconductor forms a junction with either Schottky or Ohmic behavior. If the metal's work function exceeds that of the ...
金属半導体接合のバイアス
金属半導体接合のバイアス
Biasing metal and n-type semiconductor junctions involves applying a voltage to metal while grounding the semiconductor. The resulting current is positive ...
フェルミ準位
フェルミ準位
The Fermi-Dirac function, represented by a sigmoid curve, indicates the probability of an energy state being occupied by an electron at a given ...
フェルミ準位のダイナミクス
フェルミ準位のダイナミクス
The vacuum level represents the energy threshold for an electron to escape a material's surface. It typically lies above a semiconductor's ...
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