This research was financially supported by Ministry of Science and Technology, Taiwan (104-2514-S-009 -001, 104-2627-M-009-001 and 102-2311-B-009-004-MY3). We thank the National Nano Device Laboratories (NDL) for its valuable assistance during device fabrication and analysis.

1.制作和pSNWFET设备的保护<ol><li> 器件制造 注意:pSNWFET用侧墙技术如先前报道23,24制成。 <ol><li>制备的栅极介电层。 <ol><li>帽100纳米厚的热氧化物（SiO 2）的，通过使用湿氧化工艺25（O 2和H 2处理气体在980℃下4小时）层上的Si衬底。 </li><li>通过使用低压化学气相沉积（LPCVD）25在980℃进行4小时沉积50纳米厚的氮化物（ 的 Si 3 N 4）层。 </li></ol></li><li>通过在780℃下使用LPCVD 25 4小时沉积100纳米厚的四乙基原硅酸盐（TEOS）层。 </li><li>通过使用I-线步进器以限定氧化物虚设结构执行标准光刻。 <ol><li>外套与830纳米厚的光刻胶层晶片表面。 </li><li>一世nsert图案定义的光掩模进I-线步进。 </li><li>在室温下以1980的J强度:使用I-线步进器（波长365nm）处理该曝光。 </li><li>制定一个开发者的晶片5分钟。 </li><li>通过使用感应耦合等离子体25蚀刻机用HBr和Cl等离子体气体1分钟标准执行各向同性蚀刻过程。 </li></ol></li><li>通过使用LPCVD 25沉积100纳米厚的非晶硅（α-Si）的层。 </li><li>在600℃下于N 2环境下进行的退火步骤24小时，α-硅转变成多晶结构。 </li><li>注入磷离子通过源/漏（S / D）掺杂以低能量（5E15厘米 -2）25。 </li><li>通过使用I-线步进器以除去多晶硅层并形成多晶硅纳米线（pSNW）25执行标准的光刻技术。 注:重复步骤1.1.3植入DOP蚂蚁在用聚硅去除，并形成以自对准的方式在侧壁的Si通道比的S / D区等地。 </li><li>通过在780℃下使用LPCVD 5小时25执行钝化过程（200-nm厚的TEOS氧化物层）。 </li><li>通过使用I-线步进器，通过使用两步干法/湿法蚀刻工艺以暴露纳米线通道，并形成测试垫执行标准光刻。 <ol><li>重复步骤1.1.3。 </li><li>执行湿蚀刻工艺（DHF:HF / H 2 O为1分钟）。 </li></ol></li></ol></li><li> 晶圆保存 <ol><li>密封在真空存储袋的晶片，并将其存储在电子干燥柜（相对湿度&lt;在室温下40％）。 </li></ol></li></ol> 2.设备的预处理<ol><li> 清洗设备 <ol><li>冲洗纯丙酮装置。 </li><li>声处理（46千赫兹，80瓦）在10分钟纯丙酮的设备。 </li> &lt;利&gt;超声处理（46千赫兹，80瓦）在5分钟的纯乙醇（99.5％）的器件。 </li><li>吹干用氮气器件的表面上。 </li></ol></li><li> 氧气等离子 <ol><li>对待O 2等离子装置在18瓦，持续30秒。 </li></ol></li></ol>该DNA探针在设备上表面3固定<ol><li> 氨基改性 <ol><li>浸入该装置中的2.0％（3-氨基丙基）三乙氧基硅烷（APTES）处理30分钟/乙醇溶液。 </li><li>用乙醇洗设备三次，然后声处理（46千赫兹，80瓦）的乙醇装置10分钟。 </li><li>加热上，在120℃的热板设备进行10分钟以上SNWs创建胺基。 </li></ol></li><li> 醛基修改 <ol><li>浸泡在12.5％的戊二醛器件1小时，在室温下在表面上产生醛基。避免曝光。 </li><li>清洗装置机智H 10 mM磷酸钠缓冲液（钠PB; pH7.0）中三次，然后吹干用氮气器件的表面上。 </li></ol></li><li> DNA探针固定 <ol><li>浸入设备在含有1μM的DNA探针过夜的溶液。 </li><li>用4.0毫摩尔的NaBH 3 CN浸泡在10mM Tris缓冲液（pH 8.0）中的设备30分钟以封闭未反应的醛基。 </li><li>洗用Na-PB（pH 7.0）中的三倍设备，然后吹干用氮气器件的表面上。 </li></ol></li></ol> 4. pSNWFET表面改性的确认和分析<ol><li> pH曲线以下的表面改性中的每一步 <ol><li> pH值3.0-9.0，准备10毫米的Na-PB。 <ol><li>制备10mM磷酸钠磷酸三钠十二水合物（钠3 PO 4）在去离子水（pH 11.60）。 </li><li>制备10mM的磷酸（H 3 PO 4）在去离子水（pH值为2.35）。 </li><li>放置的pH电极浸入500毫升的10mM的Na 3 PO 4缓冲液，并混合用不同体积的10毫摩尔的 H 3 PO 4缓冲该溶液中，同时测量pH值，以获得与5.0的3.0的pH值，4.0，缓冲液，6.0 ，7.0，8.0和9.0。 </li></ol></li><li> AC电导测量 注:测量电路包括一个小的交流信号发生器和一个金微丝那起液体栅电极。 <ol><li>确定最佳的液体栅电压（V LG）在每个修改步骤测定26（步骤2.2，3.1，3.2和3.3）。 注意:该装置的电性能之后如本节中所述的方法检测在SNW 4的表面改性。在步骤2.2，将含有天然氧化物层未改性pSNWFET被修改;步骤3.1嗣继承修改与胺基APTES的装置;步骤3.2涉及与不带电荷的修改戊二醛官能团;和步3.3涉及DNA探针修改。 <ol><li>交付的10mM的Na-PB（pH7.0）中的溶液到SNW表面通过使用注射泵（流量:5.0毫升/小时），进行与SNW直接接触。 </li><li>测量装置的实时电导而清扫V 的LG从0.80至1.30 V. <ol><li>通过使用锁相技术27在室温下进行电导测量。 </li><li>通过使用低噪声电流前置放大器转换的交流电流信号转换成一个交流电压信号。 </li><li>在从0.80上升V LG以1.30 V（间隔= 0.02 V）收集有关电导（G）的数据。 </li></ol></li><li>确定设备26的最佳V LG（最灵敏V LG）。 <ol><li>绘制从步骤4.1.2.1.2.3的GV LG曲线以获得曲线的方程。 </li><li> DIFferentiate方程，以V 的LG的每一点计算的值。 </li><li>由G除以从步骤4.1.2.1.3.2的值，并根据该最大数目确定最佳V 的LG。 </li></ol></li></ol></li><li>测量pH曲线的实时电导在表面改性的每一个步骤。 <ol><li>通过使用锁相技术27在室温下进行电导测量。 </li><li>通过使用低噪声电流前置放大器转换的交流电流信号转换成交流电压信号。 </li><li>设定最佳V 的LG为表面改性（步骤2.2中的每个步骤:V LG = 1.02，步骤3.1:V LG = 0.98，步骤3.2:V = LG 0.98和3.3步:V LG = 1.0）。 </li><li>递送与pH值下的10mM的Na-PB溶液从3.0到9.0到SNW表面（流速:5.0毫升/小时），以及收集关于电导数据在0.01伏的漏极电压</li></ol></li></ol></li></ol></li><li> 在10mM的Na-PB（pH 7.0）中以下的表面改性中的每个步骤的装置的电特性（的I D -V BG曲线）的测定（步骤2.2，3.1，3.2和3.3）。 注意:该装置的电性能后的SNW 4的表面改性进行测定:在步骤2.2，将含有天然氧化物层未改性pSNWFET被修改;步骤3.1涉及修改与胺基APTES的装置;步3.2带来与戊二醛的不带电的官能团修饰;和步3.3限嗣继承DNA探针修改。 <ol><li>交付的10mM的Na-PB（pH7.0）中的溶液到SNW表面（步骤2.2，3.1，3.2和3.3）通过使用注射泵（流量:5.0毫升/小时），进行与SNW直接接触。 </li><li>测量I D </em&gt;该装置的（步骤2.2，3.1，3.2和3.3）通过使用商业半导体分析仪和软件。 <ol><li>选择"NMOS场效应晶体管"模式。 </li><li>选择"I D - V BG"模块。 注:I D是漏极/源极电流，而V BG是背栅电压。 </li><li>而席卷-1的栅极电位（V BG）至3.0 V SET恒定的偏置电压（V D = 0.5 V）（间隔= 0.2 V）。 </li><li>单击Run图标，以获得I D - V BG曲线。 </li></ol></li></ol></li></ol> 5. DNA生物传感器注意:在一个典型的实验中，I D - V Bģ曲线被确定三次，以确保没有进一步的变化是OBSERVED。 <ol><li> 基线的确定 <ol><li>通过使用注射器泵递送的10mM的Na-PB液（pH7.0）中的DNA探针固定化SNW表面10分钟（流速:5.0毫升/小时），然后孵育SNW 30分钟。 </li><li>测量装置（重复步骤4.2.2）的I D。 </li></ol></li><li> DNA传感/ DNA杂交 <ol><li>负载下午10点互补的靶DNA上用于通过使用注射泵10分钟将DNA探针固定化SNW表面（流速:5.0毫升/小时），然后孵育SNW 30分钟。 </li><li>通过使用注射器泵递送的10mM的Na-PB液（pH7.0）到SNW表面10分钟（流速:5.0毫升/小时）洗未结合的靶DNA的路程。 </li><li>重复步骤4.2.2至测量设备的I D。 </li></ol></li><li> 重新确认的DNA / DNA杂交的信号。 <ol><li>负载1纳米恢复到DNAŤ通过使用注射泵他DNA探针固定化SNW表面10分钟（流速:5.0毫升/小时），然后孵育SNW 30分钟。 </li><li>通过使用注射器泵递送的10mM的Na-PB液（pH7.0）到SNW表面10分钟（流速:5.0毫升/小时）。 </li><li>重复步骤4.2.2至测量设备的I D。 </li></ol></li><li> 阴性对照 <ol><li>负载为100pM非互补DNA到用于通过使用注射泵10分钟将DNA探针固定化SNW表面（流速:5.0毫升/小时），然后孵育SNW 30分钟。 </li><li>通过使用注射器泵递送的10mM的Na-PB液（pH7.0）到SNW表面10分钟（流速:5.0毫升/小时）。 </li><li>重复步骤4.2.2至测量设备的I D。 </li></ol></li></ol>

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S. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Probing+the+sensitivity+of+nanowire-based+biosensors+using+liquid-gating.">Probing the sensitivity of nanowire-based biosensors using liquid-gating.</a> Nanotechnology. 21 (425505), (2010).</li><li>Gaspar, J., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Digital+lock+in+amplifier:+study,+design+and+development+with+a+digital+signal+processor.">Digital lock in amplifier: study, design and development with a digital signal processor.</a> Microprocess Microsy. 28, 157-162 (2004).</li><li>Vezenov, D. V., Noy, A., Rozsnyai, L. F., Lieber, C. M. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Force+titrations+and+ionization+state+sensitive+imaging+of+functional+groups+in+aqueous+solutions+by+chemical+force+microscopy.">Force titrations and ionization state sensitive imaging of functional groups in aqueous solutions by chemical force microscopy.</a> J Am Chem Soc. 119, 2006-2015 (1997).</li><li>Townsend, M. B., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Experimental+evaluation+of+the+FluChip+diagnostic+microarray+for+influenza+virus+surveillance.">Experimental evaluation of the FluChip diagnostic microarray for influenza virus surveillance.</a> J Clin Microbiol. 44, 2863-2871 (2006).</li><li>Wang, L. C., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Simultaneous+detection+and+differentiation+of+Newcastle+disease+and+avian+influenza+viruses+using+oligonucleotide+microarrays.">Simultaneous detection and differentiation of Newcastle disease and avian influenza viruses using oligonucleotide microarrays.</a> Vet Microbiol. 127, 217-226 (2008).</li><li>Lin, C. -. H., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Recovery+Based+Nanowire+Field-Effect+Transistor+Detection+of+Pathogenic+Avian+Influenza+DNA.">Recovery Based Nanowire Field-Effect Transistor Detection of Pathogenic Avian Influenza DNA.</a> Jpn J Appl Phys. 51 (02BL02), (2012).</li><li>Lee, K. N., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Well+controlled+assembly+of+silicon+nanowires+by+nanowire+transfer+method.">Well controlled assembly of silicon nanowires by nanowire transfer method.</a> Nanotechnology. 18 (445302), (2007).</li><li>Li, Z., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Sequence-specific+label-free+DNA+sensors+based+on+silicon+nanowires.">Sequence-specific label-free DNA sensors based on silicon nanowires.</a> Nano Lett. 4, 245-247 (2004).</li><li>McAlpine, M. C., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=High-performance+nanowire+electronics+and+photonics+on+glass+and+plastic+substrates.">High-performance nanowire electronics and photonics on glass and plastic substrates.</a> Nano Lett. 3, 1531-1535 (2003).</li><li>Cui, Y., Wei, Q., Park, H., Lieber, C. M. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Nanowire+nanosensors+for+highly+sensitive+and+selective+detection+of+biological+and+chemical+species.">Nanowire nanosensors for highly sensitive and selective detection of biological and chemical species.</a> Science. 293, 1289-1292 (2001).</li><li>Patolsky, F., Zheng, G., Lieber, C. M. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Nanowire-based+biosensors.">Nanowire-based biosensors.</a> Anal Chem. 78, 4260-4269 (2006).</li><li>Hsiao, C. Y., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Novel+poly-silicon+nanowire+field+effect+transistor+for+biosensing+application.">Novel poly-silicon nanowire field effect transistor for biosensing application.</a> Biosens Bioelectron. 24, 1223-1229 (2009).</li></ol>

The authors have nothing to disclose.

商业化自上而下和sSNWFETs，是因为它的成本32,33，SNW位置控制34,35，其低生产规模36认为难以自下而上的方法制造。与此相反，制造pSNWFETs是简单，成本低37。通过自上而下的方法和组合与侧墙形成技术（ 图1），该SNW的大小可通过调整反应性等离子体蚀刻的持续时间来控制。用于制备在图1a所示的所述pSNWFET的纳米线的步骤可容易地适于商业?...

硅纳米线场效应晶体管（SNWFETs）具有超高灵敏度的优势和环境电荷变化直接电响应。在n型SNWFETs例如，当一个负（或正）电荷的分子接近硅纳米线（SNW）在SNW的载流子被耗尽（或累加）。因此，SNWFET的导电性降低（或增加）1。因此，SNWFET装置的SNW表面附近的任何带电分子可以被检测出来。重要的生物分子包括酶，蛋白质，核苷酸，和许多分子在细胞表面上的电荷载流子，并且可以使用SNWFETs进行监测。用适当的改进，尤其是固定在SNW生物分子探针，SNWFET可开发成一个无标记生物传感器。 使用生物标志物监测是诊断疾病的关键。如表1所示，一些研究已经使用NWFE基于T型生物传感器为无标记，超高灵敏度，及各种生物靶的实时检测，包括单个病毒2，三磷酸腺苷和激酶结合3，神经信号4，金属离子5,6-，细菌毒素7，8多巴胺，9-11 DNA，RNA 12,13，酶和癌症生物标志物14-19，人体激素20，和细胞因子21,22。这些研究已经表明，基于NWFET生物传感器代表了一个广泛的范围内，在溶液中的生物和化学物质的强大检测平台。 在基于SNWFET生物传感器，固定在装置的SNW表面上的探头识别特定biotarget。固定化生物探针通常涉及一系列步骤，这是至关重要的是适当地进行每一步以确保生物传感器的适当运作。各种技术已经开发了用于分析在Surface组合物，包括X射线光电子能谱（XPS），椭圆偏振，接触角测定，原子力显微镜（AFM）和扫描电子显微镜（SEM）。法如原子力显微镜和SEM提供纳米线设备上的生物探针固定的直接证据，而如XPS，椭偏仪，接触角测量方法是依赖对其他类似材料进行平行实验。在这份报告中，我们描述每次修改一步使用两个独立的方法的确认。 XPS是用来检查在多晶硅晶片的特定原子的浓度，并且在该装置的电特性的变化被测量直接确认SNW表面上的电荷变化。我们通过使用多晶硅SNWFETs（pSNWFETs）为例来说明这个协议采用DNA生物传感器。在SNW表面上固定DNA探针包括三个步骤:在SNW，人的天然的羟基面上胺基改性醛团改性，和5&#39;-aminomodified DNA探针固定。在每一个修改步骤，该设备可以直接检测在电荷固定在SNW表面上的官能团的变型中，由于表面电荷造成过能改变沟道电流和电导1栅极电介质本地界面电势的变化。围绕SNW表面可电调节pSNWFET装置的电性能收费;因此，SNW的表面性质在确定pSNWFET器件的电特性起到至关重要的作用。在所报告的程序，SNW表面上的生物探针的固定化可直接测定，并通过电测定确认，且设备为生物传感应用制备。

<table><tbody><tr><td>Acetone</td><td>ECHO</td><td>AH-3102</td><td></td></tr><tr><td>(3-Amonopropyl)triethoxysilane (APTES), &amp;ge;98%</td><td>Sigma-Aldrich</td><td>A3648</td><td>Danger</td></tr><tr><td>Ethanol, anhydrous, 99.5%</td><td>ECHO</td><td>484000203108A-72EC</td><td></td></tr><tr><td>Glutaraldehyde solution (GA), 50%</td><td>Sigma-Aldrich</td><td>G7651</td><td>Avoid light</td></tr><tr><td>Sodium cyanoborohydride, &amp;ge;95.0%&amp;nbsp;</td><td>Fluka</td><td>71435</td><td>Danger and deliquescent</td></tr><tr><td>Sodium phosphate tribasic dodecahydrate, &amp;ge;98%</td><td>Sigma</td><td>04277</td><td></td></tr><tr><td>Phosphoric acid, &amp;ge;99.0%</td><td>Fluka</td><td>79622</td><td>Deliquescent</td></tr><tr><td>Photoresist (iP3650)</td><td>Tokyo Ohka Kogyo Co., LTD</td><td>THMR-iP3650 HP</td><td></td></tr><tr><td>Synthetic oligonucleotides, HPLC purified</td><td>Protech Technology</td><td></td><td></td></tr><tr><td>Tris(hydroxymethyl)aminomethane (Tris), &amp;ge;99.8%</td><td>USB</td><td>75825</td><td></td></tr><tr><td>Keithley 2636 System SourceMeter</td><td>Keithley</td><td></td><td></td></tr><tr><td>SR830 DSP Lock-In Amplifier</td><td>Stanford Research Systems</td><td></td><td></td></tr><tr><td>SR570 Low-noise Current Preamplifier</td><td>Stanford Research Systems</td><td></td><td></td></tr><tr><td>Ni PXI Express</td><td>National Instruments</td><td></td><td></td></tr></tbody></table>

preparation of silicon nanowire field-effect transistor for chemical and biosensing applications

Surveillance using biomarkers is critical for the early detection, rapid intervention, and reduction in the incidence of diseases. In this study, we describe the preparation of polycrystalline silicon nanowire field-effect transistors (pSNWFETs) that serve as biosensing devices for biomarker detection. A protocol for chemical and biomolecular sensing by using pSNWFETs is presented. The pSNWFET device was demonstrated to be a promising transducer for real-time, label-free, and ultra-high-sensitivity biosensing applications. The source/drain channel conductivity of a pSNWFET is sensitive to changes in the environment around its silicon nanowire (SNW) surface. Thus, by immobilizing probes on the SNW surface, the pSNWFET can be used to detect various biotargets ranging from small molecules (dopamine) to macromolecules (DNA and proteins). Immobilizing a bioprobe on the SNW surface, which is a multistep procedure, is vital for determining the specificity of the biosensor. It is essential that every step of the immobilization procedure is correctly performed. We verified surface modifications by directly observing the shift in the electric properties of the pSNWFET following each modification step. Additionally, X-ray photoelectron spectroscopy was used to examine the surface composition following each modification. Finally, we demonstrated DNA sensing on the pSNWFET. This protocol provides step-by-step procedures for verifying bioprobe immobilization and subsequent DNA biosensing application.

各种SNWFETs已经报道作为生物传感器（ 表1）的换能器。单晶SNWFETs（sSNWFETs）和pSNWFETs显示可比电特性如在水溶液中的换能器，并且都被报道具有许多生物传感应用。在此研究中使用的pSNWFET装置的一个有利的特点是它的简单和低成本的制造过程。 图1a示出了涉及在制造pSNWFET的关键步骤。获得从6英寸晶片（ 图1b）和一个单一的设备的SEM?...

Watch this Scientific Journal Video about Preparation of Silicon Nanowire Field-effect Transistor for Chemical and Biosensing Applications at JoVE.com

Preparation of Silicon Nanowire Field-effect Transistor for Chemical and Biosensing Applications

We describe key steps for biosensing by using polysilicon nanowire field-effect transistors, including the preparation of the device and the immobilization and confirmation of a DNA molecular probe on the nanowire surface, as well as conditions for DNA sensing.

硅纳米线场效应晶体管的研制化学生物传感与应用

Surveillance using biomarkers is critical for the early detection, rapid intervention, and reduction in the incidence of diseases. In this study, we ...

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11.0K 次观看.  National Chiao Tung University. We describe key steps for biosensing by using polysilicon nanowire field-effect transistors, including the preparation of the device and the immobilization and confirmation of a DNA molecular probe on the nanowire surface, as well as conditions for DNA sensing.

视频: Preparation of Silicon Nanowire Field-effect Transistor for Chemical and Biosensing Applications

Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds

Monolayer Contact Doping (MLCD) is a simple method for doping of surfaces and nanostructures1. MLCD results in the formation of highly controlled, ultra shallow and sharp doping profiles at the nanometer scale. In MLCD process the dopant source is a monolayer containing dopant atoms.
In this article a detailed procedure for surface doping of silicon substrate as well as silicon nanowires is demonstrated. Phosphorus dopant source was formed using tetraethyl methylenediphosphonate monolayer on a silicon substrate. This monolayer containing substrate was brought to contact with a pristine intrinsic silicon target substrate and annealed while in contact. Sheet resistance of the target substrate was measured using 4 point probe. Intrinsic silicon nanowires were synthesized by chemical vapor deposition (CVD) process using a vapor-liquid-solid (VLS) mechanism; gold nanoparticles were used as catalyst for nanowire growth. The nanowires were suspended in ethanol by mild sonication. This suspension was used to dropcast the nanowires on silicon substrate with a silicon nitride dielectric top layer. These nanowires were doped with phosphorus in similar manner as used for the intrinsic silicon wafer. Standard photolithography process was used to fabricate metal electrodes for the formation of nanowire based field effect transistor (NW-FET). The electrical properties of a representative nanowire device were measured by a semiconductor device analyzer and a probe station.

A detailed procedure for surface doping of Silicon interfaces is provided. The ultra-shallow surface doping is demonstrated by using phosphorus containing monolayers and rapid annealing process. The method can be used for doping of macroscopic area surfaces as well as nanostructures.

Monolayer Contact Doping (MLCD) is a simple method for doping of surfaces and nanostructures1. MLCD results in the formation of highly controlled, ultra ...

科研

工程学

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

As mass-produced silicon transistors have reached the nano-scale, their behavior and performances are increasingly affected, and often deteriorated, by quantum mechanical effects such as tunneling through single dopants, scattering via interface defects, and discrete trap charge states. However, progress in silicon technology has shown that these phenomena can be harnessed and exploited for a new class of quantum-based electronics. Among others, multi-layer-gated silicon metal-oxide-semiconductor (MOS) technology can be used to control single charge or spin confined in electrostatically-defined quantum dots (QD). These QD-based devices are an excellent platform for quantum computing applications and, recently, it has been demonstrated that they can also be used as single-electron pumps, which are accurate sources of quantized current for metrological purposes. Here, we discuss in detail the fabrication protocol for silicon MOS QDs which is relevant to both quantum computing and quantum metrology applications. Moreover, we describe characterization methods to test the integrity of the devices after fabrication. Finally, we give a brief description of the measurement set-up used for charge pumping experiments and show representative results of electric current quantization.

The fabrication process and experimental characterization techniques relevant to single-electron pumps based on silicon metal-oxide-semiconductor quantum dots are discussed.

硅金属 - 氧化物 - 半导体量子点单电子泵

As mass-produced silicon transistors have reached the nano-scale, their behavior and performances are increasingly affected, and often deteriorated, by ...

Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology

We demonstrate a method for the low temperature growth (350 &#176;C) of vertically-aligned carbon nanotubes (CNT) bundles on electrically conductive thin-films. Due to the low growth temperature, the process allows integration with modern low-&#954; dielectrics and some flexible substrates. The process is compatible with standard semiconductor fabrication, and a method for the fabrication of electrical 4-point probe test structures for vertical interconnect test structures is presented. Using scanning electron microscopy the morphology of the CNT bundles is investigated, which demonstrates vertical alignment of the CNT and can be used to tune the CNT growth time. With Raman spectroscopy the crystallinity of the CNT is investigated. It was found that the CNT have many defects, due to the low growth temperature. The electrical current-voltage measurements of the test vertical interconnects displays a linear response, indicating good ohmic contact was achieved between the CNT bundle and the top and bottom metal electrodes. The obtained resistivities of the CNT bundle are among the average values in the literature, while a record-low CNT growth temperature was used.

A method for the growth of low temperature vertically-aligned carbon nanotubes, and the subsequent fabrication of vertical interconnect electrical test structures using semiconductor fabrication is presented.

低温碳纳米管垂直互连的制作兼容半导体技术

We demonstrate a method for the low temperature growth (350 &#176;C) of vertically-aligned carbon nanotubes (CNT) bundles on electrically conductive ...

Fabrication of Carbon Nanotube High-Frequency Nanoelectronic Biosensor for Sensing in High Ionic Strength Solutions

The unique electronic properties and high surface-to-volume ratios of single-walled carbon nanotubes (SWNT) and semiconductor nanowires (NW) 1-4 make them good candidates for high sensitivity biosensors. When a charged molecule binds to such a sensor surface, it alters the carrier density5 in the sensor, resulting in changes in its DC conductance. However, in an ionic solution a charged surface also attracts counter-ions from the solution, forming an electrical double layer (EDL). This EDL effectively screens off the charge, and in physiologically relevant conditions ~100 millimolar (mM), the characteristic charge screening length (Debye length) is less than a nanometer (nm). Thus, in high ionic strength solutions, charge based (DC) detection is fundamentally impeded6-8.
We overcome charge screening effects by detecting molecular dipoles rather than charges at high frequency, by operating carbon nanotube field effect transistors as high frequency mixers9-11. At high frequencies, the AC drive force can no longer overcome the solution drag and the ions in solution do not have sufficient time to form the EDL. Further, frequency mixing technique allows us to operate at frequencies high enough to overcome ionic screening, and yet detect the sensing signals at lower frequencies11-12. Also, the high transconductance of SWNT transistors provides an internal gain for the sensing signal, which obviates the need for external signal amplifier.
Here, we describe the protocol to (a) fabricate SWNT transistors, (b) functionalize biomolecules to the nanotube13, (c) design and stamp a poly-dimethylsiloxane (PDMS) micro-fluidic chamber14 onto the device, and (d) carry out high frequency sensing in different ionic strength solutions11.

We describe the device fabrication and measurement protocol for carbon nanotube based high frequency biosensors. The high frequency sensing technique mitigates the fundamental ionic (Debye) screening effect and allows nanotube biosensor to be operated in high ionic strength solutions where conventional electronic biosensors fail. Our technology provides a unique platform for point-of-care (POC) electronic biosensors operating in physiologically relevant conditions.

制备碳纳米管高频纳电子生物传感器的传感高离子强度的解决方案

The unique electronic properties and high surface-to-volume ratios of single-walled carbon nanotubes (SWNT) and semiconductor nanowires (NW) 1-4 make them ...

生物工程

Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices

Flow-assisted dielectrophoresis (DEP) is an efficient self-assembly method for the controllable and reproducible positioning, alignment, and selection of nanowires. DEP is used for nanowire analysis, characterization, and for solution-based fabrication of semiconducting devices. The method works by applying an alternating electric field between metallic electrodes. The nanowire formulation is then dropped onto the electrodes which are on an inclined surface to create a flow of the formulation using gravity. The nanowires then align along the gradient of the electric field and in the direction of the liquid flow. The frequency of the field can be adjusted to select nanowires with superior conductivity and lower trap density. 
In this work, flow-assisted DEP is used to create nanowire field effect transistors. Flow-assisted DEP has several advantages: it allows selection of nanowire electrical properties; control of nanowire length; placement of nanowires in specific areas; control of orientation of nanowires; and control of nanowire density in the device. 
The technique can be expanded to many other applications such as gas sensors and microwave switches. The technique is efficient, quick, reproducible, and it uses a minimal amount of dilute solution making it ideal for the testing of novel nanomaterials. Wafer scale assembly of nanowire devices can also be achieved using this technique, allowing large numbers of samples for testing and large-area electronic applications.

In this paper, flow assisted dielectrophoresis is demonstrated for the self-assembly of nanowire devices. The fabrication of a silicon nanowire field effect transistor is shown as an example.

流动辅助介: 一种低成本的制备高性能溶液可纳米线器件的方法

Flow-assisted dielectrophoresis (DEP) is an efficient self-assembly method for the controllable and reproducible positioning, alignment, and selection of ...

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

A method of carrier number control by electrolyte gating is demonstrated. We have obtained WS2 thin flakes with atomically flat surface via scotch tape method or individual WS2 nanotubes by dispersing the suspension of WS2 nanotubes. The selected samples have been fabricated into devices by the use of the electron beam lithography and electrolyte is put on the devices. We have characterized the electronic properties of the devices under applying the gate voltage. In the small gate voltage region, ions in the electrolyte are accumulated on the surface of the samples which leads to the large electric potential drop and resultant electrostatic carrier doping at the interface. Ambipolar transfer curve has been observed in this electrostatic doping region. When the gate voltage is further increased, we met another drastic increase of source-drain current which implies that ions are intercalated into layers of WS2 and electrochemical carrier doping is realized. In such electrochemical doping region, superconductivity has been observed. The focused technique provides a powerful strategy for achieving the electric-filed-induced quantum phase transition.

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Here, we present a protocol to control the carrier number in solids by using the electrolyte.

用电解质浇注法对 WS2纳米器件电子态的电场控制

A method of carrier number control by electrolyte gating is demonstrated. We have obtained WS2 thin flakes with atomically flat surface via scotch tape ...

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors

Flexible photodetectors have been intensely studied for the use of curved image sensors, which are a crucial component in bio-inspired imaging systems, but several challenging points remain, such as a low absorption efficiency due to a thin active layer and low flexibility. We present an advanced method to fabricate a flexible phototransistor array with an improved electrical performance. The outstanding electrical performance is driven by a low dark current owing to deep impurity doping. Stretchable and flexible metal interconnectors simultaneously offer electrical and mechanical stabilities in a highly deformed state. The protocol explicitly describes the fabrication process of the phototransistor using a thin silicon membrane. By measuring I-V characteristics of the completed device in deformed states, we demonstrate that this approach improves the mechanical and electrical stabilities of the phototransistor array. We expect that this approach to a flexible phototransistor can be widely used for the applications of not only next-generation imaging systems/optoelectronics but also wearable devices such as tactile/pressure/temperature sensors and health monitors.

We present a detailed method to fabricate a deformable lateral NIPIN phototransistor array for curved image sensors. The phototransistor array with an open mesh form, which is composed of thin silicon islands and stretchable metal interconnectors, provides flexibility and stretchability. The parameter analyzer characterizes the electrical property of the fabricated phototransistor.

基于侧向 NIPIN Phototransistors 的柔性图像传感器的研制

Flexible photodetectors have been intensely studied for the use of curved image sensors, which are a crucial component in bio-inspired imaging systems, ...

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Two-dimensional (2D) materials have attracted huge attention due to their unique properties and potential applications. Since wafer scale synthesis of 2D materials is still in nascent stages, scientists cannot fully rely on traditional semiconductor techniques for related research. Delicate processes from locating the materials to electrode definition need to be well controlled. In this article, a universal fabrication protocol required in manufacturing nanoscale electronics, such as 2D quasi-heterojunction bipolar transistors (Q-HBT), and 2D back-gated transistors are demonstrated. This protocol includes the determination of material position, electron beam lithography (EBL), metal electrode definition, et al. A step by step narrative of the fabrication procedures for these devices are also presented. Furthermore, results show that each of the fabricated devices has achieved high performance with high repeatability. This work reveals a comprehensive description of process flow for preparing 2D nano-electronics, enables the research groups to access this information, and pave the way toward future electronics.

The article aims to introduce a standard and reliable fabrication procedure for the development of future low dimensional nanoelectronics.

制造二维电子学的标准可靠方法

Two-dimensional (2D) materials have attracted huge attention due to their unique properties and potential applications. Since wafer scale synthesis of 2D ...

Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection

In the current study, graphene and its derivatives have been investigated and used for many applications, including electronics, sensing, energy storage, and photocatalysis. Synthesis and fabrication of high quality, good uniformity, and low defects graphene are critical for high-performance and highly sensitive devices. Among many synthesis methods, chemical vapor deposition (CVD), considered a leading approach to manufacture graphene, can control the number of graphene layers and yield high-quality graphene. CVD graphene needs to be transferred from the metal substrates on which it is grown onto&#160;insulating substrates for practical applications. However, separation and transferring of graphene onto new substrates are challenging for a uniform layer without damaging or affecting graphene&#39;s structures and properties. Additionally, electrolyte-gated graphene field-effect transistor (EGGFET) has been demonstrated for its wide applications in various biomolecular detections because of its high sensitivity and standard device configuration. In this article, poly (methyl methacrylate) (PMMA)-assisted graphene transferring approach, fabrication of graphene field-effect transistor (GFET), and biomarker immunoglobulin G (IgG) detection are demonstrated. Raman spectroscopy and atomic force microscopy were applied to characterize the transferred graphene. The method is shown to be a practical approach for transferring clean and residue-free graphene while preserving the underlying graphene lattice onto an insulating substrate for electronics or biosensing applications.

The present protocol demonstrates the development of electrolyte-gated graphene field-effect transistor (EGGFET) biosensor and its application in biomarker immunoglobulin G (IgG) detection.

用于生物标志物检测的电解质门控石墨烯场效应晶体管的开发与功能化

In the current study, graphene and its derivatives have been investigated and used for many applications, including electronics, sensing, energy storage, ...

Focused Ion Beam Lithography to Etch Nano-architectures into Microelectrodes

With advances in electronics and fabrication technology, intracortical microelectrodes have undergone substantial improvements enabling the production of sophisticated microelectrodes with greater resolution and expanded capabilities. The progress in fabrication technology has supported the development of biomimetic electrodes, which aim to seamlessly integrate into the brain parenchyma, reduce the neuroinflammatory response observed after electrode insertion and improve the quality and longevity of electrophysiological recordings. Here we describe a protocol to employ a biomimetic approach recently classified as nano-architecture. The use of focused ion beam lithography (FIB) was utilized in this protocol to etch specific nano-architecture features into the surface of non-functional and functional single shank intracortical microelectrodes. Etching nano-architectures into the electrode surface indicated possible improvements of biocompatibility and functionality of the implanted device. One of the benefits of using FIB is the ability to etch on manufactured devices, as opposed to during the fabrication of the device, facilitating boundless possibilities to modify numerous medical devices post-manufacturing. The protocol presented herein can be optimized for various material types, nano-architecture features, and types of devices. Augmenting the surface of implanted medical devices can improve the device performance and integration into the tissue.

We have shown that the etching of nano-architecture into intracortical microelectrode devices may reduce the inflammatory response and has the potential to improve electrophysiological recordings. The methods described herein outline an approach to etch nano-architectures into the surface of non-functional and functional single shank silicon intracortical microelectrodes.

聚焦 Ion 光束平版印刷到蚀刻纳米架构到微电极

With advances in electronics and fabrication technology, intracortical microelectrodes have undergone substantial improvements enabling the production of ...