这项工作得到了台湾国家科学委员会的支持。最多105-2112 米-003-016 MY3。这项工作还部分由国家纳米设备实验室和国立台湾大学电气工程电子梁实验室支持。

1. 2D 准异质结晶体管制造工艺
<ol><li>准备商业 c 平面蓝宝石。<ol>
<li>用丙酮清洗全单面抛光蓝宝石 (2 英寸)。</li>
		<li>用异丙醇冲洗蓝宝石基底。</li>
	</ol></li>
	<li>在热壁炉中使用 CVD, 在蓝宝石基底上生长 MoS2 。<ol>
<li>将0.6 克三氧化钼 (MoO3) 粉放在位于炉膛加热区中心的石英船上。将蓝宝石衬底置于含有 MoO3粉末的石英船旁边。</li>
		<li>在炉子上游的另一只石英船上制备硫磺粉。在反应过程中保持温度在190摄氏度。</li>
		<li>使用氩 (Ar = 70 sccm, 40 乇) 气体流, 使 S 和 MoO3蒸气到蓝宝石基体, 同时加热中心区到750°c。</li>
		<li>保持加热区, 达到所需的750摄氏度的生长温度, 15 分钟, 然后自然冷却炉到室温。</li>
	</ol></li>
	<li>执行 EBL。 注: 在蓝宝石基底上的所有 EBL 过程中, 溅射沉积约 5 nm 的薄金。<ol>
<li>使用光学显微镜识别 MoS2单层薄片的区域, 然后使用设计软件 (AutoCAD) 为该特定区域设计条纹图案布局。</li>
		<li>自旋涂层光刻胶 (PR), 例如有机玻璃甲基丙烯酸甲酯 (PMMA) 或 P015, 上面的样品在 2000 rpm 六十年代 (室温)。确保 PR 覆盖整个样品后, 自旋涂层。</li>
		<li>加热样品 (软烘烤) 在100°c 在九十年代为了蒸发溶剂在 PR 和增强黏附力。</li>
		<li>将步骤1.3.1 中的模式布局转换为特定文件 (例如: GDS 文件), 然后将其上载到 EBL 软件中。</li>
		<li>根据布局中线条的宽度确定理想的电子束剂量。 注: 对于宽度小于1µm 的线宽, 理想的电子束剂量为110µC/厘米2;1至5µm 线宽, 剂量为100µC/厘米2;对于宽度大于5µm 的线宽, 剂量为80µC/厘米2。</li>
		<li>开始将样品暴露在电子束上。</li>
		<li>在样品曝光后应用曝光后烘烤 (PEB), 以减少驻波效应。在九十年代将样品加热120摄氏度。</li>
		<li>将四甲基氢氧化 TMAH 2.38% 作为开发人员使用。将样品浸入 TMAH 八十年代. 用200毫升的去离子水冲洗 TMAH 十年代。</li>
		<li>检查该模式是否良好的光学显微学发展。</li>
		<li>进行硬烘烤, 以摆脱额外的水在公关. 在九十年代将样品加热110摄氏度。</li>
	</ol></li>
	<li>定义条纹结构使用 50 W 氧 (O2) 等离子蚀刻 (1st蚀刻) 三十年代至2分钟, 并删除 PR 使用50毫升丙酮。</li>
	<li>在目标位置上使用 CVD 来生长钨硒醚 (WSe2), 这将导致在蓝宝石基底上已经存在的 MoS2条纹之间的 WSe2层的首选增长。<ol>
<li>将0.6 克三氧化钨 (禾3) 粉放在位于炉膛加热区中心的石英船上。将蓝宝石衬底置于含禾3粉的石英船旁边。</li>
		<li>在炉子上游的另一只石英船上制备硒 (硒) 粉。在反应过程中保持温度在260摄氏度。</li>
		<li>使用 ar/小时2 (ar = 90 sccm, H2 = 6 sccm, 20 乇) 气体流动带来 Se 和禾3蒸气到蓝宝石基体, 同时加热中心区到925°c。</li>
		<li>保持加热区, 达到所需的925摄氏度的生长温度, 15 分钟, 然后自然冷却炉到室温。</li>
	</ol></li>
	<li>制造金属垫阵列和对准标记。<ol>
<li>用光刻图案技术覆盖金属垫阵列的图案并对准标记。</li>
		<li>用电子枪蒸发器沉积 20 nm/60 纳米钛/Au。 注: 金用于避免金属衬垫的氧化。</li>
		<li>准备并将样品浸入100毫升丙酮中, 以溶解 PR 并进行升降。通过光学显微镜监测整个过程, 直到金属垫片变得明显时, 摇动并吹干丙酮。</li>
	</ol></li>
	<li>执行另一个 EBL 进程, 将功能区形状模式覆盖在 MoS2-WSe2异质结的顶部。<ol>
<li>使用光学显微镜测量 MoS2-WSe2异质结中的目标位置与对准标记之间的坐标位移, 并根据这些测量结果设计使用软件 (AutoCAD) 的带状形状布局。</li>
		<li>自旋涂层 PR, 例如 PMMA 或 P015, 在样品的顶部在 2000 rpm 六十年代 (室温)。确保 PR 覆盖整个样品后, 自旋涂层。</li>
		<li>加热样品 (软烘烤) 在100°c 在九十年代为了蒸发溶剂在 PR 和增强黏附力。</li>
		<li>将步骤1.7.1 中的模式布局转换为特定文件 (例如: GDS 文件), 然后将其上载到 EBL 软件中。</li>
		<li>根据布局中线条的宽度确定理想的电子束剂量。 注: 对于宽度小于1µm 的线宽, 理想的电子束剂量为110µC/厘米2;1至5µm 线宽, 剂量为100µC/厘米2;对于宽度大于5µm 的线宽, 剂量为80µC/厘米2。</li>
		<li>设置 EBL 机, 使在蓝宝石衬底上的对准标记位置与布局中的对应相匹配。</li>
		<li>开始将样品暴露在电子束上。</li>
		<li>在样品曝光后应用 PEB, 以减少驻波效应。在九十年代将样品加热120摄氏度。</li>
		<li>使用 TMAH 2.38% 作为开发人员。将样品浸入 TMAH 八十年代. 用200毫升去离子水冲洗 TMAH 十年代。</li>
		<li>检查该模式是否良好的光学显微学发展。</li>
		<li>进行硬烘烤, 以摆脱额外的水在公关. 在九十年代将样品加热110摄氏度。</li>
	</ol></li>
	<li>使用 O2等离子蚀刻 (2和蚀刻) 来定义带状形状的横向异质结, 并通过丙酮去除 PR。</li>
	<li>执行 EBL 过程覆盖钛/金金属电极的模式。<ol>
<li>用光学显微镜测量 MoS2-WSe2异质结中目标位置与对准标记之间的坐标位移, 并根据这些测量方法设计金属电极布局。</li>
		<li>自旋涂层 PR, 例如 PMMA 或 P015, 在样品的顶部在 2000 rpm 六十年代 (室温)。确保 PR 覆盖整个样品后, 自旋涂层。</li>
		<li>加热样品 (软烘烤) 在100°c 在九十年代为了蒸发溶剂在 PR 和增强黏附力。</li>
		<li>将步骤1.9.1 中的模式布局转换为特定文件 (例如: GDS 文件), 然后将其上载到 EBL 软件中。</li>
		<li>根据金属线在布局中的宽度确定理想的电子束剂量。 注: 对于窄于1µm 的金属线宽度, 理想的电子束剂量为110µC/厘米2;1至5µm 线宽, 剂量为100µC/厘米2;对于宽度大于5µm 的线宽, 剂量为80µC/厘米2。</li>
		<li>设置 EBL 机, 使蓝宝石衬底上的对准标记位置与布局中的对应相匹配。</li>
		<li>开始将样品暴露在电子束上。</li>
		<li>在样品曝光后应用 PEB, 以减少驻波效应。在九十年代将样品加热120摄氏度。</li>
		<li>使用 TMAH 2.38% 作为开发人员。将样品浸入 TMAH 八十年代. 用200毫升去离子水冲洗 TMAH 十年代。</li>
		<li>检查该模式是否良好的光学显微学发展。</li>
		<li>进行硬烘烤, 以摆脱额外的水在公关. 在九十年代将样品加热110摄氏度。</li>
	</ol></li>
	<li>执行钛/金金属沉积和升降<ol>
<li>用电子枪蒸发器沉积钛/金, 其厚度小于100纳米, 否则, 将很难去除 PR 和不需要的金属的升降。</li>
		<li>准备并将样品浸入100毫升丙酮中, 以溶解 PR 并进行升降。通过光学显微镜监测整个过程, 直到只剩下金属线和衬垫, 才能震动和吹干丙酮。</li>
	</ol></li>
	<li>执行步骤1.9 中的 EBL 过程, 但覆盖 Pd/au 金属电极的模式, 而不是 Ti/au。</li>
	<li>执行步骤1.10 中的金属沉积和升降过程, 但将 Pd/au 代替 Ti/au。</li>
</ol>2. 2D 后门控晶体管制造工艺
<ol><li>准备背面门控硅/2基板与对准标记。<ol>
<li>准备国产或商用2/硅基板。</li>
		<li>使用光刻或 EBL 图案技术来定义对齐标记。</li>
		<li>对2/硅基板进行反应离子蚀刻 (离子刻蚀), 直到目标区域的总深度达到 1000 nm, 并通过 O2等离子去除 PR, 以显示形成的对准标记。</li>
		<li>使用光刻图案技术覆盖金属垫阵列的图案。</li>
		<li>用电子枪蒸发器沉积 20 nm/60 纳米钛/Au。 注: 金用于避免金属垫的氧化。</li>
		<li>准备并将样品浸入100毫升丙酮中, 以溶解 PR 并进行升降。在用光学显微镜监测整个过程时, 摇动和吹丙酮, 直到金属垫片变得明显。</li>
	</ol>
</li>
	<li>在热壁炉上对蓝宝石基底上的 MoS2进行 CVD。<ol>
<li>将0.6 克 MoO3粉末放在位于熔炉加热区中心的石英船上。将蓝宝石衬底置于含有 MoO3粉末的石英船旁边。</li>
		<li>在炉子上游的一条独立的石英船上制备 S 粉末。在反应过程中保持温度在190摄氏度。</li>
		<li>使用氩 (Ar = 70 sccm, 40 乇) 气体流, 使 S 和 MoO3蒸气到蓝宝石基体, 同时加热中心区到750°c。</li>
		<li>保持加热区, 达到所需的750摄氏度的生长温度, 15 分钟, 然后自然冷却炉到室温。</li>
	</ol>
</li>
	<li>将 MoS2从蓝宝石传输到后端门式2/Si 衬底。<ol>
<li>自旋外套 PMMA 以 3500 rpm 的自转速度三十年代在 MoS2影片之上。</li>
		<li>烘烤 MoS2/蓝宝石样品在120°c 为3分钟, 以加强 PMMA 涂层。</li>
		<li>将 mos2/蓝宝石样品浸入50毫升氨溶液 (14.5%), 约30分钟至 2 h, 以将 mos2胶片与蓝宝石基底隔开。</li>
		<li>拿起胶卷, 把它转移到2/Si 衬底。</li>
		<li>烘烤 mos2/2/Si 样品, 以增强 mos2和2层之间的附着力。将样品加热120摄氏度, 约30分钟至1小时。</li>
		<li>用30毫升丙酮清洗有机玻璃, 大约30分钟到2小时, 除去 PMMA。</li>
		<li>用异丙醇冲洗样品, 用氮气吹干。</li>
	</ol>
</li>
	<li>执行 EBL。 注: EBL 过程中, 由于 Si 的导电性, 在2/硅基板上没有沉积薄金。<ol>
<li>用光学显微镜测量目标位置与对准标记之间的坐标位移, 并根据这些测量结果设计出金属电极的图案布局。 注: 金属电极将 MoS2样品中的靶点连接至2/Si 衬底的金属垫片。</li>
		<li>自旋涂层 PR, 例如 PMMA 或 P015, 在样品的顶部在 2000 rpm 六十年代 (室温)。确保 PR 覆盖了整个样品。</li>
		<li>加热样品 (软烘烤) 在100°c 在九十年代为了蒸发溶剂在 PR 和增强黏附力。</li>
		<li>将步骤2.4.1 中的模式布局转换为特定文件 (例如: GDS 文件), 然后将其上载到 EBL 软件中。</li>
		<li>根据金属线在布局中的宽度确定理想的电子束剂量。 注: 对于窄于1µm 的金属线宽度, 理想的电子束剂量为110µC/厘米2;1至5µm 线宽, 剂量为100µC/厘米2;对于宽度大于5µm 的线宽, 剂量为80µC/厘米2。</li>
		<li>设置 EBL 机, 使在 Si/2衬底上的对准标记位置与布局中的对应相匹配。</li>
		<li>开始将样品暴露在电子束上。</li>
		<li>在样品曝光后应用 PEB, 以减少驻波效应。在九十年代将样品加热120摄氏度。</li>
		<li>使用 TMAH 2.38% 作为开发人员。将样品浸入 TMAH 八十年代. 用200毫升的去离子水冲洗 TMAH 十年代。</li>
		<li>检查该模式是否良好的光学显微学发展。</li>
		<li>进行硬烘烤, 以摆脱额外的水在公关. 在九十年代将样品加热110摄氏度。</li>
	</ol>
</li>
	<li>执行金金属沉积和升降<ol>
<li>用电子枪蒸发器沉积金金属, 其厚度小于100纳米, 否则将难以去除 PR 和不需要的金属。</li>
		<li>准备并将样品浸入100毫升丙酮中, 以溶解 PR 并进行升降。在通过光学显微镜监测过程时, 摇动和吹丙酮, 直到只有金属线和衬垫。</li>
	</ol>
</li>
</ol>

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H., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Polymer-free+patterning+of+graphene+at+sub-10-nm+scale+by+low-energy+repetitive+electron+beam.">Polymer-free patterning of graphene at sub-10-nm scale by low-energy repetitive electron beam.</a> Small. 10 (22), 4778-4784 (2014).</li><li>Romero, M. F., Bosca, A., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Impact+of+2D-Graphene+on+SiN+Passivated+AlGaN/GaN+MIS-HEMTs+Under+Mist+Exposure.">Impact of 2D-Graphene on SiN Passivated AlGaN/GaN MIS-HEMTs Under Mist Exposure.</a> IEEE Electron Device Letters. 38 (10), 1441-1444 (2017).</li><li>Blaschke, B. M., Tort-Colet, N., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Mapping+brain+activity+with+flexible+graphene+micro-transistors.">Mapping brain activity with flexible graphene micro-transistors.</a> 2D Materials. 4 (2), 25040 (2017).</li><li>Zhu, Z., Murtaza, I., Meng, H., Huang, W. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Thin+film+transistors+based+on+two+dimensional+graphene+and+graphene/semiconductor+heterojunctions.">Thin film transistors based on two dimensional graphene and graphene/semiconductor heterojunctions.</a> RSC Advances. 7 (28), 17387-17397 (2017).</li><li>Kim, S. J., Choi, K., Lee, B., Kim, Y., Hong, B. H. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Materials+for+Flexible,+Stretchable+Electronics:+Graphene+and+2D+Materials.">Materials for Flexible, Stretchable Electronics: Graphene and 2D Materials.</a> Annual Review of Materials Research. 45 (1), 63-84 (2015).</li><li>Manzeli, S., Ovchinnikov, D., Pasquier, D., Yazyev, O. V., Kis, A. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=2D+transition+metal+dichalcogenides.">2D transition metal dichalcogenides.</a> Nature Reviews Materials. 2, (2017).</li><li>Kolobov, A. V., Tominaga, J. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=.">.</a> Emerging Applications of 2D TMDCs. 239, 473-512 (2016).</li><li>Nguyen, L. N., Lan, Y. W., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Resonant+tunneling+through+discrete+quantum+states+in+stacked+atomic-layered+MoS2.">Resonant tunneling through discrete quantum states in stacked atomic-layered MoS2.</a> Nano Letters. 14 (5), 2381-2386 (2014).</li><li>Torres, C. M., Lan, Y. W., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=High-Current+Gain+Two-Dimensional+MoS2-Base+Hot-Electron+Transistors.">High-Current Gain Two-Dimensional MoS2-Base Hot-Electron Transistors.</a> Nano Letters. 15 (12), 7905-7912 (2015).</li><li>Jariwala, D., Sangwan, V. K., Lauhon, L. J., Marks, T. J., Hersam, M. C. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Emerging+Device+Applications+for+Semiconducting+Two-Dimensional+Transition+Metal+Dichalcogenides.">Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides.</a> ACS Nano. 8 (2), 1102-1120 (2014).</li><li>Choi, W., Choudhary, N., Han, G. H., Park, J., Akinwande, D., Lee, Y. H. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Recent+development+of+two-dimensional+transition+metal+dichalcogenides+and+their+applications.">Recent development of two-dimensional transition metal dichalcogenides and their applications.</a> Materials Today. 20 (3), 116-130 (2017).</li><li>Xiao, H. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=.">.</a> Introduction to Semiconductor Manufacturing Technology, Second Edition. , (2012).</li><li>Lin, C. Y., Zhu, X., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Atomic-Monolayer+Two-Dimensional+Lateral+Quasi-Heterojunction+Bipolar+Transistors+with+Resonant+Tunneling+Phenomenon.">Atomic-Monolayer Two-Dimensional Lateral Quasi-Heterojunction Bipolar Transistors with Resonant Tunneling Phenomenon.</a> ACS Nano. 11 (11), 11015-11023 (2017).</li><li>Qi, J., Lan, Y. W., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Piezoelectric+effect+in+chemical+vapour+deposition-grown+atomic-monolayer+triangular+molybdenum+disulfide+piezotronics.">Piezoelectric effect in chemical vapour deposition-grown atomic-monolayer triangular molybdenum disulfide piezotronics.</a> Nature Communications. 6, (2015).</li></ol>

作者没有什么可透露的。

本文介绍了基于纳米尺度的2D 材料制作新型电子产品的具体程序。由于每种应用的样品制备程序有差异, 重叠过程被视为协议。电子束模式结合材料定位确定和金属电极的定义, 因此在这里充当协议。在上述两种类型的器件中, 提出了从湿式转移单晶 MoS2薄膜到2/硅基片上的2D 后门控晶体管的全过程, 以及在金属升降时的结束。在2D 后门控晶体管上给出焦点的原因是改进的2D 材料基场...

自过去几十年以来, 人类经历了晶体管大小的快速缩小, 因此, 集成电路 (ICs) 中晶体管的数量呈指数上升。这保持了硅基互补金属氧化物半导体 (CMOS) 技术1的持续发展。此外, 这一目前的规模和性能的制造设备仍在轨道上的摩尔定律, 其中指出, 电子芯片上的晶体管数量, 以及其性能, 大约每两年2倍。CMOS 晶体管是存在于大多数, 即使不是全部, 电子设备在市场上可用, 从而使它成为人类生活的一个组成部分。由于这一点, 不断的需求, 以改善芯片的规模和性能, 一直推动制造商遵循摩尔的法律轨道。
不幸的是, 摩尔定律似乎快要结束了, 因为更多的硅电路被压缩到一个小面积2的时候产生的热量。这就要求新类型的材料可以提供与硅相同的性能, 如果不是更好, 则可以在相对较小的范围内实现。近年来, 新材料已成为许多材料科学研究的主题。此类材料为一维 (1D) 碳纳米管3、4、5、6、7、2D 石墨烯8、9、10、11,12、过渡金属 dichalcogenides (TMDs)13、14、15、16、17、18, 是优秀的候选者, 可作为替代硅基 CMOS, 并继续摩尔的法律轨道。
制作小规模设备需要仔细确定材料的位置, 以成功地进行其他制造技术, 如光刻和金属电极的定义。因此, 本文提出的方法是为了满足这一需要而设计的。与传统的半导体制造技术19相比, 本文提出的方法适合于小尺寸器件的开发, 在寻找材料的位置方面需要更多的关注。该方法的目的是可靠地制造2D 纳米材料器件, 如2D 后门控晶体管和 Q 双, 使用标准制造工艺。这可以成为未来 nanodevice 发展的平台, 因为它为未来先进的纳米级器件的生产铺平了道路。
在程序部分, 详细讨论了2D 材料基器件的制造工艺, 即 Q HBT 和2D 后置门式晶体管。电子束模式结合材料定位确定和金属电极定义包括该协议, 因为它们在上述两个过程中都是必需的。第1部分讨论了 Q-双20的分步制作过程;和2部分展示了一种普遍的方法, 获得化学气相沉积 (CVD) 二硫化钼 (MoS2) 后门控晶体管从转移到推力21, 这已经完全显示在本文中。详细的流程流程如下所示 (图 1)。

<table border="0" cellpadding="0" cellspacing="0" style="width:973px;" width="973">
	<tbody>
		<tr height="21">
			<td height="21" style="height:21px;width:248px;">E-gun Evaporator</td>
			<td style="width:175px;">AST</td>
			<td style="width:255px;">PEVA 600I</td>
			<td style="width:296px;"></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:248px;">Au slug, 99.99%</td>
			<td>Well-Being Enterprise Co</td>
			<td>&#160;N/A</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:248px;">Ti slug, 99.99%</td>
			<td>Well-Being Enterprise Co</td>
			<td>&#160;N/A</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:248px;">E-beam Lithography System</td>
			<td style="width:175px;">Elionix</td>
			<td style="width:255px;">ELS7500-EX</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:248px;">Cold Wall CVD System</td>
			<td style="width:175px;">Sulfur Science</td>
			<td style="width:255px;">SCW600S</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:248px;">C-plane Sapphire substrate</td>
			<td style="width:175px;">Summit-Tech</td>
			<td style="width:255px;">X171999</td>
			<td>(0001) &#177; 0.2 &#176; one side polished</td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:248px;">100 nm SiO2/Si</td>
			<td style="width:175px;"></td>
			<td style="width:255px;"></td>
			<td>Fabricated in NDL</td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:248px;">Ammonia Solution</td>
			<td style="width:175px;">BASF</td>
			<td style="width:255px;">Ammonia Solution 28% Selectipur</td>
			<td style="width:296px;"></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:248px;">Molybdenum (Mo), 99.95%</td>
			<td style="width:175px;">Summit-Tech&#160;</td>
			<td style="width:255px;">N/A</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:248px;">Tungsten (W), 99.95%</td>
			<td style="width:175px;">Summit-Tech&#160;</td>
			<td style="width:255px;">N/A</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:248px;">Sulfur (S), 99.5%</td>
			<td style="width:175px;">Sigma-Aldrich&#160;</td>
			<td style="width:255px;">13803</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:248px;">Polymethyl Methacrylate (PMMA)</td>
			<td style="width:175px;">Microchem&#160;</td>
			<td style="width:255px;">8110788</td>
			<td>Use for transfer process</td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:248px;">Spin Coater</td>
			<td>Laurell&#160;</td>
			<td>WS 400B 6NPP LITE</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:248px;">Acetone</td>
			<td style="width:175px;">BASF</td>
			<td style="width:255px;">Acetone EL Selectipur</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:248px;">Isopropanol (IPA)</td>
			<td style="width:175px;">BASF</td>
			<td style="width:255px;">2-Propanol UPS</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:248px;">Photo Resist for EBL</td>
			<td style="width:175px;">TOK</td>
			<td style="width:255px;">TDUR-P-015</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:248px;">Plasma Cleaner</td>
			<td style="width:175px;">Harrick Plasma</td>
			<td style="width:255px;">PDC-32G</td>
			<td>Oxygen plasma</td>
		</tr>
	</tbody>
</table>

a standard and reliable method to fabricate two-dimensional nanoelectronics

二维 (2D) 材料由于其独特的性能和潜在的应用, 引起了人们的极大关注。由于2D 材料的硅片规模合成尚处于起步阶段, 科学家们不能完全依靠传统的半导体技术进行相关研究。微妙的过程从定位材料到电极的定义需要很好的控制。本文介绍了制造纳米电子所需的通用制造协议, 如2D 准异质结双极晶体管 (Q HBT) 和2D 后向门控晶体管。该协议包括材料位置的确定, 电子束光刻 (EBL), 金属电极的定义,等等。文中还介绍了这些装置的制作过程的逐步叙述。结果表明, 所研制的器件均具有较高的重复性和高的性能。这项工作揭示了制备2D 纳米电子的流程流程的全面描述, 使研究小组能够访问这些信息, 并为未来的电子学铺平道路。

该装置的制造工艺已应用于相应的作者研究, 涉及2D 材料器件的开发。在这一部分中, 本文给出的一些研究结果表明了上述协议的有效性。以2-MoS2 Q HBT20为例, 选取了一层侧向 WSe。使用协议中详细介绍的标准设备制造过程, heterojunctions 了单层侧向 WSe2-MoS2 (图 2a), 然后由 Q HBT 的形成进行。金属接触沉积?...

Watch this Scientific Journal Video about A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics at JoVE.com

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

本文旨在为未来低维电子学的开发提供一个标准可靠的制造程序。

制造二维电子学的标准可靠方法

Two-dimensional (2D) materials have attracted huge attention due to their unique properties and potential applications. Since wafer scale synthesis of 2D ...

a-standard-reliable-method-to-fabricate-two-dimensional

Universidad de Cartagena UDEC

Research

JoVE Journal

Engineering

9.5K 次观看.  National Taiwan Normal University. 本文旨在为未来低维电子学的开发提供一个标准可靠的制造程序。

视频: A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

A Method to Fabricate Disconnected Silver Nanostructures in 3D

The standard nanofabrication toolkit includes techniques primarily aimed at creating 2D patterns in dielectric media. Creating metal patterns on a submicron scale requires a combination of nanofabrication tools and several material processing steps. For example, steps to create planar metal structures using ultraviolet photolithography and electron-beam lithography can include sample exposure, sample development, metal deposition, and metal liftoff. To create 3D metal structures, the sequence is repeated multiple times. The complexity and difficulty of stacking and aligning multiple layers limits practical implementations of 3D metal structuring using standard nanofabrication tools. Femtosecond-laser direct-writing has emerged as a pre-eminent technique for 3D nanofabrication.1,2 Femtosecond lasers are frequently used to create 3D patterns in polymers and glasses.3-7 However, 3D metal direct-writing remains a challenge. Here, we describe a method to fabricate silver nanostructures embedded inside a polymer matrix using a femtosecond laser centered at 800 nm. The method enables the fabrication of patterns not feasible using other techniques, such as 3D arrays of disconnected silver voxels.8 Disconnected 3D metal patterns are useful for metamaterials where unit cells are not in contact with each other,9 such as coupled metal dot10,11or coupled metal rod12,13 resonators. Potential applications include negative index metamaterials, invisibility cloaks, and perfect lenses.
In femtosecond-laser direct-writing, the laser wavelength is chosen such that photons are not linearly absorbed in the target medium. When the laser pulse duration is compressed to the femtosecond time scale and the radiation is tightly focused inside the target, the extremely high intensity induces nonlinear absorption. Multiple photons are absorbed simultaneously to cause electronic transitions that lead to material modification within the focused region. Using this approach, one can form structures in the bulk of a material rather than on its surface.
Most work on 3D direct metal writing has focused on creating self-supported metal structures.14-16 The method described here yields sub-micrometer silver structures that do not need to be self-supported because they are embedded inside a matrix. A doped polymer matrix is prepared using a mixture of silver nitrate (AgNO3), polyvinylpyrrolidone (PVP) and water (H2O). Samples are then patterned by irradiation with an 11-MHz femtosecond laser producing 50-fs pulses. During irradiation, photoreduction of silver ions is induced through nonlinear absorption, creating an aggregate of silver nanoparticles in the focal region. Using this approach we create silver patterns embedded in a doped PVP matrix. Adding 3D translation of the sample extends the patterning to three dimensions.

Femtosecond-laser direct-writing is frequently used to create three-dimensional (3D) patterns in polymers and glasses. However, patterning metals in 3D remains a challenge. We describe a method for fabricating silver nanostructures embedded inside a polymer matrix using a femtosecond laser centered at 800 nm.

一个断开连接的银纳米结构的方法来制作的3D

The standard nanofabrication toolkit includes  techniques primarily aimed at creating 2D patterns in dielectric media. Creating  metal patterns on a ...

科研

工程学

Nanomoulding of Functional Materials, a Versatile Complementary Pattern Replication Method to Nanoimprinting

We describe a nanomoulding technique which allows low-cost nanoscale patterning of functional materials, materials stacks and full devices. Nanomoulding combined with layer transfer enables the replication of arbitrary surface patterns from a master structure onto the functional material. Nanomoulding can be performed on any nanoimprinting setup and can be applied to a wide range of materials and deposition processes. In particular we demonstrate the fabrication of patterned transparent zinc oxide electrodes for light trapping applications in solar cells.

We describe a nanomoulding technique which allows low-cost nanoscale patterning of functional materials, materials stacks and full devices. Nanomoulding can be performed on any nanoimprinting setup and can be applied to a wide range of materials and deposition processes.

Nanomoulding功能材料，灵活的互补模式的复制方法，以奈米

We describe a nanomoulding technique which  allows low-cost nanoscale patterning of functional materials, materials stacks  and full devices. Nanomoulding ...

A Method for Studying the Temperature Dependence of Dynamic Fracture and Fragmentation

The dynamic fracture of a body is a late-stage phenomenon typically studied under simplified conditions, in which a sample is deformed under uniform stress and strain rate. This can be produced by evenly loading the inner surface of a cylinder. Due to the axial symmetry, as the cylinder expands the wall is placed into a tensile hoop stress that is uniform around the circumference. While there are various techniques to generate this expansion such as explosives, electromagnetic drive, and existing gas gun techniques they are all limited in the fact that the sample cylinder must be at room temperature. We present a new method using a gas gun that facilitates experiments on cylinders from 150 K to 800 K with a consistent, repeatable loading. These highly diagnosed experiments are used to examine the effect of temperature on the fracture mechanisms responsible for failure, and their resulting influence on fragmentation statistics. The experimental geometry employs a steel ogive located inside the target cylinder, with the tip located about halfway in. A single stage light gas gun is then used to launch a polycarbonate projectile into the cylinder at 1,000 m/sec-1. The projectile impacts and flows around the rigid ogive, driving the sample cylinder from the inside. The use of a non-deforming ogive insert allows us to install temperature control hardware inside the rear of the cylinder. Liquid nitrogen (LN2) is used for cooling and a resistive high current load for heating. Multiple channels of upshifted photon Doppler velocimetry (PDV) track the expansion velocity along the cylinder enabling direct comparison to computer simulations, while High speed imaging is used to measure the strain to failure. The recovered cylinder fragments are also subject to optical and electron microscopy to ascertain the failure mechanism.

Fracture and fragmentation are late stage phenomena in dynamic loading scenarios and are typically studied using explosives. We present a technique for driving expansion using a gas gun which uniquely enables control of both loading rate and sample temperature.

为研究动态断裂及破碎的温度敏感性的方法

The dynamic fracture of a body is a late-stage phenomenon typically studied under simplified conditions, in which a sample is deformed under uniform ...

A Cost-effective and Reliable Method to Predict Mechanical Stress in Single-use and Standard Pumps

Pumps are mainly used when transferring sterile culture broths in biopharmaceutical and biotechnological production processes. However, during the pumping process shear forces occur which can lead to qualitative and/or quantitative product loss. To calculate the mechanical stress with limited experimental expense, an oil-water emulsion system was used, whose suitability was demonstrated for drop size detections in bioreactors1. As drop breakup of the oil-water emulsion system is a function of mechanical stress, drop sizes need to be counted over the experimental time of shear stress investigations. In previous studies, the inline endoscopy has been shown to be an accurate and reliable measurement technique for drop size detections in liquid/liquid dispersions. The aim of this protocol is to show the suitability of the inline endoscopy technique for drop size measurements in pumping processes. In order to express the drop size, the Sauter mean diameter d32 was used as the representative diameter of drops in the oil-water emulsion. The results showed low variation in the Sauter mean diameters, which were quantified by standard deviations of below 15%, indicating the reliability of the measurement technique.

Shear stress investigations on an oil-water emulsion system result in drop breakup over the experimental time. To count drop sizes in pumping processes, the suitability of inline endoscopy was successfully demonstrated in this protocol.

高性价比和可靠的方法来预测机械应力一次性使用和标准泵

Pumps are mainly used when transferring sterile culture broths in biopharmaceutical and biotechnological production processes. However, during the pumping ...

Standardized Method for Measuring Collection Efficiency from Wipe-sampling of Trace Explosives

One of the limiting steps to detecting traces of explosives at screening venues is effective collection of the sample. Wipe-sampling is the most common procedure for collecting traces of explosives, and standardized measurements of collection efficiency are needed to evaluate and optimize sampling protocols. The approach described here is designed to provide this measurement infrastructure, and controls most of the factors known to be relevant to wipe-sampling. Three critical factors (the applied force, travel distance, and travel speed) are controlled using an automated device. Test surfaces are chosen based on similarity to the screening environment, and the wipes can be made from any material considered for use in wipe-sampling. Particle samples of the explosive 1,3,5-trinitroperhydro-1,3,5-triazine (RDX) are applied in a fixed location on the surface using a dry-transfer technique. The particle samples, recently developed to simulate residues made after handling explosives, are produced by inkjet printing of RDX solutions onto polytetrafluoroethylene (PTFE) substrates. Collection efficiency is measured by extracting collected explosive from the wipe, and then related to critical sampling factors and the selection of wipe material and test surface. These measurements are meant to guide the development of sampling protocols at screening venues, where speed and throughput are primary considerations.

Optimized sampling protocols and the development of new wipe materials can be facilitated by standardized measurements of collection efficiency from wipe-sampling. Our approach for sampling trace explosives uses an automated device to control speed, force, and distance during wipe-sampling followed by extraction of collected explosives.

从微量炸药的擦拭取样测量收集效率的标准化方法

One of the limiting steps to detecting traces of explosives at screening venues is effective collection of the sample. Wipe-sampling is the most common ...

A Novel Method for In Situ Electromechanical Characterization of Nanoscale Specimens

Electrically assisted deformation (EAD) is increasingly being used to improve the formability of metals during processes such as sheet metal rolling and forging. Adoption of this technique is proceeding despite disagreement concerning the underlying mechanism responsible for EAD. The experimental procedure described herein enables a more explicit study compared to previous EAD research by removing thermal effects, which are responsible for disagreement in interpreting previous EAD results. Furthermore, as the procedure described here enables EAD observation in situ and in real time in a transmission electron microscope (TEM), it is superior to existing post-mortem methods that observe EAD effects post-test. Test samples consist of a single crystal copper (SCC) foil having a free-standing tensile test section of nanoscale thickness, fabricated using a combination of laser and ion beam milling. The SCC is mounted to an etched silicon base that provides mechanical support and electrical isolation while serving as a heat sink. Using this geometry, even at high current density (~3,500 A/mm2), the test section experiences a negligible temperature increase (&#60;0.02 &#176;C), thus eliminating Joule heating effects. Monitoring material deformation and identifying the corresponding changes to microstructures, e.g. dislocations, are accomplished by acquiring and analyzing a series of TEM images. Our sample preparation and in situ experiment procedures are robust and versatile as they can be readily utilized to test materials with different microstructures, e.g., single and polycrystalline copper.

A Novel Method for In Situ Electromechanical Characterization of Nanoscale Specimens

Isolating electrical and thermal effects on electrically assisted deformation (EAD) is very difficult using macroscopic samples. Metallic sample micro- and nanostructures together with a custom test procedure have been developed to evaluate the impact of applied current on the formation without joule heating and evolution of dislocations on these samples.

一种新的方法<em&gt;原位</em&gt;纳米级样品的机电表征

Electrically assisted deformation (EAD) is increasingly being used to improve the formability of metals during processes such as sheet metal rolling and ...

Experimental Implementation of a New Composite Fabrication Method: Exposing Bare Fibers on the Composite Surface by the Soft Layer Method

The bipolar plate is a key component in proton exchange membrane fuel cells (PEMFCs) and vanadium redox flow batteries (VRFBs). It is a multi-functional component that should have high electrical conductivity, high mechanical properties, and high productivity.
In this regard, a carbon fiber/epoxy resin composite can be an ideal material to replace the conventional graphite bipolar plate, which often leads to the catastrophic failure of the entire system because of its inherent brittleness. Though the carbon/epoxy composite has high mechanical properties and is easy to manufacture, the electrical conductivity in the through-thickness direction is poor because of the resin-rich layer that forms on its surface. Therefore, an expanded graphite coating was adopted to solve the electrical conductivity issue. However, the expanded graphite coating not only increases the manufacturing costs but also has poor mechanical properties.
In this study, a method to expose fibers on the composite surface is demonstrated. There are currently many methods that can expose fibers by surface treatment after the fabrication of the composite. This new method, however, does not require surface treatment because the fibers are exposed during the manufacture of the composite. By exposing bare carbon fibers on the surface, the electrical conductivity and mechanical strength of the composite are increased drastically.

A protocol to expose bare fibers on the composite surface by eliminating resin rich area is presented. The fibers are exposed during fabrication of the composites, not by the post surface treatment. The exposed carbon composites exhibit high electrical conductivity in the through-thickness direction and high mechanical property.

一种新的复合制备方法的实验实现: 用软层法对复合材料表面裸露纤维进行曝光

The bipolar plate is a key component in proton exchange membrane fuel cells (PEMFCs) and vanadium redox flow batteries (VRFBs). It is a multi-functional ...

Method for Recording Broadband High Resolution Emission Spectra of Laboratory Lightning Arcs

Lightning is one of the most common and destructive forces in nature and has long been studied using spectroscopic techniques, first with traditional camera film methods and then digital camera technology, from which several important characteristics have been derived. However, such work has always been limited due to the inherently random and non-repeatable nature of natural lightning events in the field. Recent developments in lightning test facilities now allow the reproducible generation of lightning arcs within controlled laboratory environments, providing a test bed for the development of new sensors and diagnostic techniques to understand lightning mechanisms better. One such technique is a spectroscopic system using digital camera technology capable of identifying the chemical elements with which the lightning arc interacts, with these data then being used to derive further characteristics. In this paper, the spectroscopic system is used to obtain the emission spectrum from a 100 kA peak, 100 &#181;s duration lightning arc generated across a pair of hemispherical tungsten electrodes separated by a small air gap. To maintain a spectral resolution of less than 1 nm, several individual spectra were recorded across discrete wavelength ranges, averaged, stitched, and corrected to produce a final composite spectrum in the 450 nm (blue light) to 890 nm (near infrared light) range. Characteristic peaks within the data were then compared to an established publicly available database to identify the chemical element interactions. This method is readily applicable to a variety of other light emitting events, such as fast electrical discharges, partial discharges, and sparking in electrical equipment, apparatus, and systems.

Emission spectroscopy techniques have traditionally been used to analyze inherently random lightning arcs occurring in nature. In this paper, a method developed to obtain the emission spectroscopy from reproducible lightning arcs generated within a laboratory environment is described.

记录实验室闪电弧宽带高分辨率发射光谱的方法

Lightning is one of the most common and destructive forces in nature and has long been studied using spectroscopic techniques, first with traditional ...

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Flexible non-volatile memories have received much attention as they are applicable for portable smart electronic device in the future, relying on high-density data storage and low-power consumption capabilities. However, the high-quality oxide based nonvolatile memory on flexible substrates is often constrained by the material characteristics and the inevitable high-temperature fabrication process. In this paper, a protocol is proposed to directly grow an epitaxial yet flexible lead zirconium titanate memory element on muscovite mica. The versatile deposition technique and measurement method enable the fabrication of flexible yet single-crystalline non-volatile memory elements necessary for the next generation of smart devices.

In this paper, we present a protocol to directly grow an epitaxial yet flexible lead zirconium titanate memory element on muscovite mica.

基于范德华 Heteroepitaxy 的柔性铁电元件制备及测量方法

Flexible non-volatile memories have received much attention as they are applicable for portable smart electronic device in the future, relying on ...

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

To form a coherent quantum transport in hybrid superconductor-semiconductor (S-Sm) junctions, the formation of a homogeneous and barrier-free interface between two different materials is necessary. The S-Sm junction with high interface transparency will then facilitate the observation of the induced hard superconducting gap, which is the key requirement to access the topological phases (TPs) and observation of exotic quasiparticles such as Majorana zero modes (MZM) in hybrid systems. A material platform that can support observation of TPs and allows the realization of complex and branched geometries is therefore highly demanding in quantum processing and computing science and technology. Here, we introduce a two-dimensional material system and study the proximity induced superconductivity in semiconducting two-dimensional electron gas (2DEG) that is the basis of a hybrid quantum integrated circuit (QIC). The 2DEG is a 30 nm thick In0.75Ga0.25As quantum well that is buried between two In0.75Al0.25As barriers in a heterostructure. Niobium (Nb) films are used as the superconducting electrodes to form Nb- In0.75Ga0.25As -Nb Josephson junctions (JJs) that are symmetric, planar and ballistic. Two different approaches were used to form the JJs and QICs. The long junctions were fabricated photolithographically, but e-beam lithography was used for short junctions&#8217; fabrication. The coherent quantum transport measurements as a function of temperature in the presence/absence of magnetic field B are discussed. In both device fabrication approaches, the proximity induced superconducting properties were observed in the In0.75Ga0.25As 2DEG. It was found that e-beam lithographically patterned JJs of shorter lengths result in observation of induced superconducting gap at much higher temperature ranges. The results that are reproducible and clean suggesting that the hybrid 2D JJs and QICs based on In0.75Ga0.25As quantum wells could be a promising material platform to realize the real complex and scalable electronic and photonic quantum circuitry and devices.

Quantum integrated circuits (QICs) consisting of array of planar and ballistic Josephson junctions (JJs) based on In0.75Ga0.25As two-dimensional electron gas (2DEG) is demonstrated. Two different methods for fabrication of the two-dimensional (2D) JJs and QICs are discussed followed by the demonstration of quantum transport measurements in sub-Kelvin temperatures.

超导二维电子气体平台上的可扩展量子集成电路

To form a coherent quantum transport in hybrid superconductor-semiconductor (S-Sm) junctions, the formation of a homogeneous and barrier-free interface ...