This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) (No.2014R1A2A1A11051146). This work was also supported by National Research Foundation of Korea Grant funded by the Korean Government (NRF-2014R1A1A2058350).

1.化学气相沉积（CVD）生长单层石墨烯的注意:在此研究中使用的石墨上生长铜（Cu）箔使用热化学气相沉积（CVD）技术（图1A）。生长上是均匀的2厘米×10厘米为这个系统的区域。 <ol><li>用丙酮的温和流动，异丙醇（IPA）和蒸馏水，洗涤Cu箔（2厘米×10厘米）分别。 </li><li>放置清洗Cu箔在一个2中。石英管（图1B），然后通过使用旋转泵吹扫真空（大约1毫乇）的腔室10分钟。 </li><li>配置数字化炉的温度，并且斜升炉内995℃，同时保持所需的流速（以100sccm的氩气和50sccm的氢气）（ 图1C）。 </li><li>引入20sccm的甲烷 （CH 4）的10分钟中生长的单层石墨烯。保持80 SC氩厘米和20sccm的氢气通过的过程。 </li><li>让炉冷却至室温在5分钟内，在步骤1.4中指定的流率。用氩气再吹扫室中为100sccm。 </li></ol> 2.制备石墨烯/聚乙烯对苯二甲酸酯（PET）基板<ol><li>放置石墨烯生长Cu箔（1.5厘米×2厘米）上的载玻片，并修复由商业带（ 图2A）的边缘。 </li><li>旋涂一层聚（甲基丙烯酸甲酯）（PMMA）以500rpm，持续5秒，然后3000rpm离心30秒（Figure2B）。然后，烘烤的PMMA包覆的Cu箔基材在60℃下进行2分钟，以除去溶剂残余物。 </li><li>骰子PMMA包覆铜箔成更小的构件1厘米×1.5使用刀片。 </li><li>通过将Cu箔面朝下30分钟浸泡PMMA包覆Cu箔成镍蚀刻剂贮存器（超过500毫升）。这使得在蚀刻液浮PMMA /石墨烯层（ <stroNG&gt;图2C）。一块PMMA包覆Cu箔是足够的实验向前。 </li><li>炒到PMMA /石墨烯层上载玻片，然后浸入PMMA /石墨烯层为去离子水水库。重复两次。最后，舀PMMA /石墨烯层上的PET基板（图2D），然后烘烤衬底在105℃下进行2分钟，以除去水残余物。 </li><li>通过浸渍在温水丙酮（60℃）10分钟去除的PMMA层。 </li></ol> 3.合成氧化锌纳米棒/石墨烯/氧化锌纳米棒外延双异质结的<ol><li>开始加热用40mM六水合硝酸锌的前体溶液，40毫六亚甲基四胺（HMT），并在95℃的对流烘箱（图3A）9毫聚乙烯亚胺（PEI）在DI水中60分钟。也就是说，预热过程。 </li><li>而预热的过程中，完全覆盖在基板和旋涂用5mM乙酸锌溶液的乙醇层寻在500rpm，持续5秒的石墨烯/ PET基材上Ç乙酸，然后2000rpm下60秒钟（图3B和图3C）。然后，烘烤基板在200℃下30分钟。重复两次。层的厚度约为30纳米。 </li><li>通过将基材面朝下，在95℃（图3D）浸泡种子包覆石墨烯/ PET基材入预热的溶液中。确定加热时间所需的纳米结构， 即单异质结（T &lt;12小时， 图3E）和双异质结（T&gt; 12小时， 图3F）。 </li><li>小心喷洒乙醇在基板上并干燥它在RT 1小时。 注意:对于扫描电子显微镜（SEM），使用剃刀刀片切块的样品为更小的片5毫米×5毫米，安装在SEM阶段样品。 </li></ol> 4.制造压电纳米发电机的注:压电NANOGenerator在这项研究中具有三个电极（顶部，中部，底部）。使用铟锡氧化物（ITO）涂覆的PET作为底电极（图4A）。 <ol><li>旋涂的层的聚二甲基硅氧烷（PDMS）在500rpm下5秒，然后6,000rpm下60秒，以形成ITO和ZnO纳米棒（图4B）之间的绝缘层。层的厚度为大约3微米。 </li><li>完全固化基板在80℃下2小时在对流烘箱。 </li><li>通过使用该方法在第2（ 图4C）的石墨烯转移至PDMS涂覆的ITO / PET基底上。 </li><li>通过使用该方法在第3（ 图4D）合成在基板上的双异质结构。 </li><li>旋涂的层的PDMS在500rpm，持续5秒，然后5000rpm下60秒，以改善在ZnO纳米棒的鲁棒性和耐久性，然后完全治愈它在80℃下进行2小时（图4E）。层的厚度是约8微米。 </li><li>覆盖ITO涂布的PET基片作为上电极（图4F）。 </li></ol> 5，电气性能测量设置注意:我们设置了定制设备的电气性能表征采用直线电机，工业规模和示波器。建立帧用于垂直支承线性马达，并将商业规模的线性电动机下，如图5A所示。规模应该是小，重量轻（0.02 KG - 20千克）很敏感。 <ol><li>将纳米发电机的规模，然后连接纳米发生器的电极以感测示波器的探头（图5A 和 5B）。 </li><li>设置线性电机的初始和最终位置和速度，同时密切监测重量中的比例。 提示:配置，其中纳米发电机轻微接触测量电初始位置键相设置。线性电动机的速度决定的应变速率。 </li><li>启动直线电机和监测随时间的电压信号。保存在闪速存储器中的时间相关的电压信号。应变速率:100毫米/秒和施加载荷:50N。 </li></ol>

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The authors declare that they have no competing financial interests.

请注意，高品质（&gt; 99.8％，退火）的Cu箔的应被视为一个基板单层石墨烯的成功生长。否则，单个石墨烯层是不均匀地在Cu箔长大，导致显着地减少在石墨烯的导电性。阿1小时退火的高温将有助于Cu箔结晶从Cu箔的任何污染物的提高以及去除。 的ZnO纳米棒的生长依赖于用于预热水热条件，因此，最佳浓度，温度和时间的增长必须仔细进行校准。六水合硝酸锌和HMT的浓度决定?...

最近，便携式和可佩戴电子设备成为舒适的生活由于纳米技术的发展，这导致对于在微瓦到毫瓦的范围内的功率源的巨大需求的一个基本要素。可观的方法用于便携式和可穿戴设备的电源已经由可再生能源来实现，包括太阳能1,2-，3,4-热和机械源5,6。压电纳米发生器已被深入研究，作为可能的候选用于从环境中，如沙沙叶片7，声波8和人类被9运动能量采集设备之一。主原理的纳米发生器底层是压电潜力和介电材料作为阻挡之间的耦合。在应变材料中产生的压电势引起流经外部CIRC瞬变电流UIT，这在压电和介电材料之间的界面平衡的潜力。纳米发电机的性能将通过使用压电材料的纳米结构，由于在高应力和响应速度下的鲁棒性的鲁棒性，微小的变形10得到改善。 一维氧化锌纳米结构是一种很有前途的组件压电材料在纳米发电机由于其吸引人的特性， 例如 ，它的高压电（26.7分/ V）11，光学透明度12，和浅显的合成用化学方法13。种植了完全一致的ZnO纳米棒的水热方法受到很大的关注，因为成本低，环保的合成和潜在的易结垢起来。此外，预热水热技术是容易控制的实验条件下，从而导致多种新颖的纳米结构，如nanoleaves 14，纳米花15和纳米管16。新颖的纳米结构使在电气和光电装置只要材料的高比表面积要求的性能具有有益效果。 在这个协议中，我们描述了实验方法合成更新颖的纳米结构（即，独立的双异质结构）。的ZnO纳米棒的在石墨烯和聚对苯二甲酸乙酯（PET）的基底之间的界面生长导致自升在ZnO纳米棒/石墨烯单异质结构，得到了独立的双异质结构。此外，这种独特的纳米结构的电子和光电器件的可行的应用证明了制造压电纳米发电机。独立式的双异质结构不仅提供高的比表面积，而且纳米棒的给定区域中高数量密度。这种独特的纳米结构具有巨大的强效IAL为电气和光 - 电装置，如压力传感器，免疫传感器和染料敏化太阳能电池的应用程序。

<table><tbody><tr><td>Cu foil</td><td>Alfa Aesar</td><td>13382</td><td></td></tr><tr><td>poly(methyl methacrylate) (PMMA)</td><td>Aldrich</td><td>182230</td><td></td></tr><tr><td>zinc nitrate hexahydrate</td><td>Sigma-Aldrich</td><td>228732</td><td></td></tr><tr><td>hexamethylenetetramine (HMT)</td><td>Sigma-Aldrich</td><td>398160</td><td></td></tr><tr><td>polyethylenimine (PEI)</td><td>Sigma-Aldrich</td><td>408719</td><td></td></tr><tr><td>indium tin oxide (ITO) coated PET</td><td>Aldrich</td><td>639303</td><td></td></tr><tr><td>Silicone Elastomer Kit</td><td>Dow Corning</td><td>Sylgard 184 a, b</td><td></td></tr><tr><td>Nickel Etchant Type1</td><td>Transene Company</td><td>41212</td><td></td></tr></tbody></table>

preparation of zno nanorod/graphene/zno nanorod epitaxial double heterostructure for piezoelectrical nanogenerator by using preheating hydrothermal

那么对齐ZnO纳米结构已经深入研究过了显着的物理特性和巨大的应用在过去的十年。这里，我们描述一个一步法制造技术制合成独立式的ZnO纳米棒/石墨烯/氧化锌纳米棒双异质结构。双异质结构的制备是通过使用热化学气相沉积（CVD）和预热水热技术进行。此外，该形态性质通过使用扫描电子显微镜（SEM）。独立式双异质结构的效用表现为制造压电纳米发电机。电输出提高至200％相比，由于ZnO纳米棒的顶部和石墨烯的底部阵列之间的压电的耦合效应的单个异质结构。这种独特的双异质结构有巨大潜力的电气和光 - 电应用在需要高数密度与纳米棒的比表面积装置，如压力传感器，免疫传感器和染料敏化太阳能电池。

扫描电子显微镜（SEM） 图 6示出本的水热生长的ZnO纳米棒的形态的图像。预热水热技术可以导致两个不同的纳米结构根据生长时间。 图6A示出了上，以5小时的生长时间石墨烯/ PET基材的ZnO纳米棒的一个典型的图像。与此相反，在图6B所示的图像表明氧化锌纳米棒在12小时的生长时间的增长已成功进行不仅对石墨烯的顶部，而且在石墨烯...

Watch this Scientific Journal Video about Preparation of ZnO Nanorod/Graphene/ZnO Nanorod Epitaxial Double Heterostructure for Piezoelectrical Nanogenerator by Using Preheating Hydrothermal at JoVE.co

Preparation of ZnO Nanorod/Graphene/ZnO Nanorod Epitaxial Double Heterostructure for Piezoelectrical Nanogenerator by Using Preheating Hydrothermal

利用预热水热氧化锌纳米棒/石墨烯/氧化锌纳米棒外延双异质结的机压电纳米发电机的研制

一步法制备方法获得独立的外延双异质结构呈现。这种方法可以实现的ZnO覆盖率比外延单异质结构的更高的数密度，导致了压电纳米发电机具有增加输出电性能。

Well-aligned ZnO nanostructures have been intensively studied over the last decade for remarkable physical properties and enormous applications. Here, we ...

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12.5K 次观看.  Pusan National University (PNU), Miryang. 一步法制备方法获得独立的外延双异质结构呈现。这种方法可以实现的ZnO覆盖率比外延单异质结构的更高的数密度，导致了压电纳米发电机具有增加输出电性能。 

视频: Preparation of ZnO Nanorod/Graphene/ZnO Nanorod Epitaxial Double Heterostructure for Piezoelectrical Nanogenerator by Using Preheating Hydrothermal

Preparation and Use of Photocatalytically Active Segmented Ag|ZnO and Coaxial TiO2-Ag Nanowires Made by Templated Electrodeposition

Photocatalytically active nanostructures require a large specific surface area with the presence of many catalytically active sites for the oxidation and reduction half reactions, and fast electron (hole) diffusion and charge separation. Nanowires present suitable architectures to meet these requirements. Axially segmented Ag|ZnO and radially segmented (coaxial) TiO2-Ag nanowires with a diameter of 200 nm and a length of 6-20 &#181;m were made by templated electrodeposition within the pores of polycarbonate track-etched (PCTE) or anodized aluminum oxide (AAO) membranes, respectively. In the photocatalytic experiments, the ZnO and TiO2 phases acted as photoanodes, and Ag as cathode. No external circuit is needed to connect both electrodes, which is a key advantage over conventional photo-electrochemical cells. For making segmented Ag|ZnO nanowires, the Ag salt electrolyte was replaced after formation of the Ag segment to form a ZnO segment attached to the Ag segment. For making coaxial TiO2-Ag nanowires, a TiO2 gel was first formed by the electrochemically induced sol-gel method. Drying and thermal annealing of the as-formed TiO2 gel resulted in the formation of crystalline TiO2 nanotubes. A subsequent Ag electrodeposition step inside the TiO2 nanotubes resulted in formation of coaxial TiO2-Ag nanowires. Due to the combination of an n-type semiconductor (ZnO or TiO2) and a metal (Ag) within the same nanowire, a Schottky barrier was created at the interface between the phases. To demonstrate the photocatalytic activity of these nanowires, the Ag|ZnO nanowires were used in a photocatalytic experiment in which H2 gas was detected upon UV illumination of the nanowires dispersed in a methanol/water mixture. After 17 min&#160;of illumination, approximately 0.2 vol% H2 gas was detected from a suspension of ~0.1 g of Ag|ZnO nanowires in a 50 ml 80 vol% aqueous methanol solution.

Preparation and Use of Photocatalytically Active Segmented Ag|ZnO and Coaxial TiO2-Ag Nanowires Made by Templated Electrodeposition

Procedures are outlined to prepare segmented and coaxial nanowires via templated electrodeposition in nanopores. As examples, segmented nanowires consisting of Ag and ZnO segments, and coaxial nanowires consisting of a TiO2 shell and a Ag core were made. The nanowires were used in photocatalytic hydrogen formation experiments.

制备和使用光催化活性分段银|氧化锌和二氧化钛同轴<sub&gt; 2</sub&gt;银纳米线制成由模板电

Photocatalytically active nanostructures require a large specific surface area with the presence of many catalytically active sites for the oxidation and ...

科研

工程学

Synthesis and Characterization of High c-axis ZnO Thin Film by Plasma Enhanced Chemical Vapor Deposition System and its UV Photodetector Application

In this study, zinc oxide (ZnO) thin films with high c-axis (0002) preferential orientation have been successfully and effectively synthesized onto silicon (Si) substrates via different synthesized temperatures by using plasma enhanced chemical vapor deposition (PECVD) system. The effects of different synthesized temperatures on the crystal structure, surface morphologies and optical properties have been investigated. The X-ray diffraction (XRD) patterns indicated that the intensity of (0002) diffraction peak became stronger with increasing synthesized temperature until 400 oC. The diffraction intensity of (0002) peak gradually became weaker accompanying with appearance of (10-10) diffraction peak as the synthesized temperature up to excess of 400 oC. The RT photoluminescence (PL) spectra exhibited a strong near-band-edge (NBE) emission observed at around 375 nm and a negligible deep-level (DL) emission located at around 575 nm under high c-axis ZnO thin films. Field emission scanning electron microscopy (FE-SEM) images revealed the homogeneous surface and with small grain size distribution. The ZnO thin films have also been synthesized onto glass substrates under the same parameters for measuring the transmittance.
For the purpose of ultraviolet (UV) photodetector application, the interdigitated platinum (Pt) thin film (thickness ~100 nm) fabricated via conventional optical lithography process and radio frequency (RF) magnetron sputtering. In order to reach Ohmic contact, the device was annealed in argon circumstances at 450 oC by rapid thermal annealing (RTA) system for 10 min. After the systematic measurements, the current-voltage (I-V) curve of photo and dark current and time-dependent photocurrent response results exhibited a good responsivity and reliability, indicating that the high c-axis ZnO thin film is a suitable sensing layer for UV photodetector application.

We offered a method to directly synthesize high c-axis (0002) ZnO thin film by plasma enhanced chemical vapor deposition. The as-synthesized ZnO thin film combined with Pt interdigitated electrode was used as sensing layer for ultraviolet photodetector, showing a high performance through a combination of its good responsivity and reliability.

合成和高c轴ZnO薄膜等离子体的特性增强化学气相沉积系统及其紫外探测器的应用

In this study, zinc oxide (ZnO) thin films with high c-axis (0002) preferential orientation have been successfully and effectively synthesized onto ...

Synthesis of Hierarchical ZnO/CdSSe Heterostructure Nanotrees

A two-step chemical vapor deposition procedure is here employed to prepare tree-like hierarchical ZnO/CdSSe hetero-nanostructures. The structures are composed of CdSSe branches grown on ZnO nanowires that are vertically aligned on a transparent sapphire substrate. The morphology was measured via scanning electron microscopy. The crystal structure was determined by X-ray powder diffraction analysis. Both the ZnO stem and CdSSe branches have a predominantly wurtzite crystal structure. The mole ratio of S and Se in the CdSSe branches was measured by energy dispersive X-ray spectroscopy. The CdSSe branches result in strong visible light absorption. Photoluminescence (PL) spectroscopy showed that the stem and branches form a type-II heterojunction. PL lifetime measurements showed a decrease in the lifetime of emission from the trees when compared to emission from individual ZnO stems or CdSSe branches and indicate fast charge transfer between CdSSe and ZnO. The vertically aligned ZnO stems provide a direct electron transport pathway to the substrate and allow for efficient charge separation after photoexcitation by visible light. The combination of the abovementioned properties makes ZnO/CdSSe nanotrees promising candidates for applications in solar cells, photocatalysis, and opto-electronic devices.

Here, we prepare and characterize novel tree-like hierarchical ZnO/CdSSe nanostructures, where CdSSe branches are grown on vertically aligned ZnO nanowires. The resulting nanotrees are a potential material for solar energy conversion and other opto-electronic devices.

分层的ZnO / CdSSe异质Nanotrees的合成

A two-step chemical vapor deposition procedure is here employed to prepare tree-like hierarchical ZnO/CdSSe hetero-nanostructures. The structures are ...

化学

High Temperature Fabrication of Nanostructured Yttria-Stabilized-Zirconia (YSZ) Scaffolds by In Situ Carbon Templating Xerogels

We demonstrate a method for the high temperature fabrication of porous, nanostructured yttria-stabilized-zirconia (YSZ, 8 mol% yttria - 92 mol% zirconia) scaffolds with tunable specific surface areas up to 80 m2&#183;g-1. An aqueous solution of a zirconium salt, yttrium salt, and glucose is mixed with propylene oxide (PO) to form a gel. The gel is dried under ambient conditions to form a xerogel. The xerogel is pressed into pellets and then sintered in an argon atmosphere. During sintering, a YSZ ceramic phase forms and the organic components decompose, leaving behind amorphous carbon. The carbon formed in situ serves as a hard template, preserving a high surface area YSZ nanomorphology at sintering temperature. The carbon is subsequently removed by oxidation in air at low temperature, resulting in a porous, nanostructured YSZ scaffold. The concentration of the carbon template and the final scaffold surface area can be systematically tuned by varying the glucose concentration in the gel synthesis. The carbon template concentration was quantified using thermogravimetric analysis (TGA), the surface area and pore size distribution was determined by physical adsorption measurements, and the morphology was characterized using scanning electron microscopy (SEM). Phase purity and crystallite size was determined using X-ray diffraction (XRD). This fabrication approach provides a novel, flexible platform for realizing unprecedented scaffold surface areas and nanomorphologies for ceramic-based electrochemical energy conversion applications, e.g. solid oxide fuel cell (SOFC) electrodes.

High Temperature Fabrication of Nanostructured Yttria-Stabilized-Zirconia YSZ Scaffolds by In Situ Carbon Templating Xerogels

A protocol for fabricating porous, nanostructured yttria-stabilized-zirconia (YSZ) scaffolds at temperatures between 1,000 &#176;C and 1,400 &#176;C is presented.

通过纳米氧化钇稳定的二氧化锆（YSZ）的支架的高温加工<em&gt;原位</em&gt;碳模板干凝胶

We demonstrate a method for the high temperature fabrication of porous, nanostructured yttria-stabilized-zirconia (YSZ, 8 mol% yttria - 92 mol% zirconia) ...

Well-aligned Vertically Oriented ZnO Nanorod Arrays and their Application in Inverted Small Molecule Solar Cells

This manuscript describes how to design and fabricate efficient inverted solar cells, which are based on a two-dimensional conjugated small molecule (SMPV1) and [6,6]-phenyl-C71-butyric acid methyl ester (PC71BM), by utilizing ZnO nanorods (NRs) grown on a high quality Al-doped ZnO (AZO) seed layer. The inverted SMPV1:PC71BM solar cells with ZnO NRs that grew on both a sputtered and sol-gel processed AZO seed layer are fabricated. Compared with the AZO thin film prepared by the sol-gel method, the sputtered AZO thin film exhibits better crystallization and lower surface roughness, according to X-ray diffraction (XRD) and atomic force microscope (AFM) measurements. The orientation of the ZnO NRs grown on a sputtered AZO seed layer shows better vertical alignment, which is beneficial for the deposition of the subsequent active layer, forming better surface morphologies. Generally, the surface morphology of the active layer mainly dominates the fill factor (FF) of the devices. Consequently, the well-aligned ZnO NRs can be used to improve the carrier collection of the active layer and to increase the FF of the solar cells. Moreover, as an anti-reflection structure, it can also be utilized to enhance the light harvesting of the absorption layer, with the power conversion efficiency (PCE) of solar cells reaching 6.01%, higher than the sol-gel based solar cells with an efficiency of 4.74%.

This manuscript describes how to design and fabricate efficient inverted SMPV1:PC71BM solar cells with ZnO nanorods (NRs) grown on a high quality Al-doped ZnO (AZO) seed layer. The well-aligned vertically oriented ZnO NRs exhibit high crystalline properties. The power conversion efficiency of solar cells can reach 6.01%.

定向定向 ZnO 纳米阵列及其在倒小分子太阳电池中的应用

This manuscript describes how to design and fabricate efficient inverted solar cells, which are based on a two-dimensional conjugated small molecule ...

Preparation and Characterization of C60/Graphene Hybrid Nanostructures

Physical thermal deposition in a high vacuum environment is a clean and controllable method for fabricating novel molecular nanostructures on graphene. We present methods for depositing and passively manipulating C60 molecules on rippled graphene that advance the pursuit of realizing applications involving 1D C60/graphene hybrid structures. The techniques applied in this exposition are geared towards high vacuum systems with preparation areas capable of supporting molecular deposition as well as thermal annealing of the samples. We focus on C60 deposition at low pressure using a homemade Knudsen cell connected to a scanning tunneling microscopy (STM) system. The number of molecules deposited is regulated by controlling the temperature of the Knudsen cell and the deposition time. One-dimensional (1D) C60 chain structures with widths of two to three molecules can be prepared via tuning of the experimental conditions. The surface mobility of the C60 molecules increases with annealing temperature allowing them to move within the periodic potential of the rippled graphene. Using this mechanism, it is possible to control the transition of 1D C60 chain structures to a hexagonal close packed quasi-1D stripe structure.

Preparation and Characterization of C60/Graphene Hybrid Nanostructures

Here we present a protocol for the fabrication of C60/graphene hybrid nanostructures by physical thermal evaporation. Particularly, the proper manipulation of deposition and annealing conditions allow the control over the creation of 1D and quasi 1D C60 structures on rippled graphene.

C 型60/石墨烯混合纳米结构的制备与表征

Physical thermal deposition in a high vacuum environment is a clean and controllable method for fabricating novel molecular nanostructures on graphene. We ...

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Flexible non-volatile memories have received much attention as they are applicable for portable smart electronic device in the future, relying on high-density data storage and low-power consumption capabilities. However, the high-quality oxide based nonvolatile memory on flexible substrates is often constrained by the material characteristics and the inevitable high-temperature fabrication process. In this paper, a protocol is proposed to directly grow an epitaxial yet flexible lead zirconium titanate memory element on muscovite mica. The versatile deposition technique and measurement method enable the fabrication of flexible yet single-crystalline non-volatile memory elements necessary for the next generation of smart devices.

In this paper, we present a protocol to directly grow an epitaxial yet flexible lead zirconium titanate memory element on muscovite mica.

基于范德华 Heteroepitaxy 的柔性铁电元件制备及测量方法

Flexible non-volatile memories have received much attention as they are applicable for portable smart electronic device in the future, relying on ...

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Two-dimensional (2D) materials have attracted huge attention due to their unique properties and potential applications. Since wafer scale synthesis of 2D materials is still in nascent stages, scientists cannot fully rely on traditional semiconductor techniques for related research. Delicate processes from locating the materials to electrode definition need to be well controlled. In this article, a universal fabrication protocol required in manufacturing nanoscale electronics, such as 2D quasi-heterojunction bipolar transistors (Q-HBT), and 2D back-gated transistors are demonstrated. This protocol includes the determination of material position, electron beam lithography (EBL), metal electrode definition, et al. A step by step narrative of the fabrication procedures for these devices are also presented. Furthermore, results show that each of the fabricated devices has achieved high performance with high repeatability. This work reveals a comprehensive description of process flow for preparing 2D nano-electronics, enables the research groups to access this information, and pave the way toward future electronics.

The article aims to introduce a standard and reliable fabrication procedure for the development of future low dimensional nanoelectronics.

制造二维电子学的标准可靠方法

Two-dimensional (2D) materials have attracted huge attention due to their unique properties and potential applications. Since wafer scale synthesis of 2D ...

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Heterostructure field effect transistors (HFETs) utilizing a two dimensional electron gas (2DEG) channel have a great potential for high speed device applications. Zinc oxide (ZnO), a semiconductor with a wide bandgap (3.4 eV) and high electron saturation velocity has gained a great deal of attention as an attractive material for high speed devices. Efficient gate modulation, however, requires high-quality Schottky contacts on the barrier layer. In this article, we present our Schottky diode fabrication procedure on Zn-polar BeMgZnO/ZnO heterostructure with high density 2DEG which is achieved through strain modulation and incorporation of a few percent Be into the MgZnO-based barrier during growth by molecular beam epitaxy (MBE). To achieve high crystalline quality, nearly lattice-matched high-resistivity GaN templates grown by metal-organic chemical vapor deposition (MOCVD) are used as the substrate for the subsequent MBE growth of the oxide layers. To obtain the requisite Zn-polarity, careful surface treatment of GaN templates and control over the VI/II ratio during the growth of low temperature ZnO nucleation layer are utilized. Ti/Au electrodes serve as Ohmic contacts, and Ag electrodes deposited on the O2 plasma pretreated BeMgZnO surface are used for Schottky contacts.

Attainment of high-quality Schottky contacts is imperative for achieving efficient gate modulation in heterostructure field effect transistors (HFETs). We present the fabrication methodology and characteristics of Schottky diodes on Zn-polar BeMgZnO/ZnO heterostructures with high-density two dimensional electron gas (2DEG), grown by plasma-assisted molecular beam epitaxy on GaN templates.

等离子体辅助分子束外延法制备的锌极性 BeMgZnO/氧化锌异质结构肖特基二极管的制备

Heterostructure field effect transistors (HFETs) utilizing a two dimensional electron gas (2DEG) channel have a great potential for high speed device ...

Preparation of Graphene Liquid Cells for the Observation of Lithium-ion Battery Material

In this work, we introduce the preparation of graphene liquid cells (GLCs), encapsulating both electrode materials and organic liquid electrolytes between two graphene sheets, and the facile synthesis of one-dimensional nanostructures using electrospinning. The GLC enables in situ transmission electron microscopy (TEM) for the lithiation dynamics of electrode materials. The in situ GLC-TEM using an electron beam for both imaging and lithiation can utilize not only realistic battery electrolytes, but also the high-resolution imaging of various morphological, phase, and interfacial transitions.

Here, we present a protocol for the fabrication and preparation of a graphene liquid cell for in situ transmission electron microscopy observation, along with a synthesis of electrode materials and electrochemical battery cell tests.

锂离子电池材料用石墨烯液位的制备

In this work, we introduce the preparation of graphene liquid cells (GLCs), encapsulating both electrode materials and organic liquid electrolytes between ...

利用预热水热氧化锌纳米棒/石墨烯/氧化锌纳米棒外延双异质结的机压电纳米发电机的研制

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制备和使用光催化活性分段银|氧化锌和二氧化钛同轴