Name: a fabrication and measurement method for a flexible ferroelectric element based on van der waals heteroepitaxy
Uploaded: 2018-04-08T14:00:00.000+00:00
Duration: 10 min 40 s
Description: Watch this Scientific Journal Video about A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy at JoVE.com

この作品は、国家自然科学基金、中国の (許可番 11402221 と 11502224)、状態キー研究所の強烈なパルス放射シミュレーション効果 (SKLIPR1513) と湖南地方キー研究と開発計画 (号によって支えられました。2016 週 2014)。

1. 柔軟な PZT 薄膜の作製
<ol><li>雲母シートから 1 cm x 1 cm のマイカ基板をハサミでカットします。</li>
	<li>この 1 cm x 1 cm のマイカ基板を両面テープを使用して机の上修正します。</li>
	<li>ピンセットを使用して、剥離、雲母の層の所望の厚さ (50 μ m) までマイクロメータで測定します。</li>
	<li>これをたてに貼り付ける銀塗料の薄い層を使用して 5 ' 基板ホルダーにマイカ基板を劈開し、しっかりと雲母基板上に 10 分間ホット プレート上 120 ° C でそれを治します。</li>
	<li>PLD (パルス レーザー蒸着) 基板ホルダーを PLD チャンバーに入れ。</li>
	<li>繰返し率 (例えば、10 Hz) を選択し、レーザーのエネルギー (例えば、300 mJ)。</li>
	<li>集光レンズをセット ポジションに移動します。</li>
	<li>シャッターを開くし、預金 5 nm CoFe2O4 (CFO) [エネルギーをレーザー: 300 mJ、酸素圧力: 50 mTorr、試料温度: 590 ° C、成膜時間: 5 分] 薄膜のレーザー (図 1) をトリガーすることによってバッファー層として。</li>
	<li>20-80 nm SrRuO3 (SRO) を預金 [レーザー エネルギー: 300 mJ、酸素圧力: 100 mTorr、試料温度: 680 ° C、成膜時間: 10-30 分] レーザー (をトリガーすることによってその後の電気的性能テストの下部電極として CFO バッファー層を図 1)。</li>
	<li>150 のデポジット nm PZT [レーザー エネルギー: 300 mJ、酸素圧力: 100 mTorr、試料温度: 650 ° C、成膜時間: 60 分] SRO 下部電極上に薄膜のレーザー (図 1) をトリガーすることによって。</li>
	<li>N2チャンバーを発散し、温度が室内の温度に達したら PZT/マイカ サンプル (図 2) を削除します。</li>
	<li>ガラスの部分にサンプルを置きます。</li>
	<li>サンプルの上に 200 μ m 径のあらかじめデザインされたメッシュを置きます。よくメッシュを修正し、スパッタ室にメッシュのサンプルを置きます。</li>
	<li>使用 DC スパッタ 10 mA、8 mbar (6 分) フィルムに Pt 上部電極を入金します。スパッタリングした後サンプルを削除します。</li>
	<li>ナイフまたは 20% のフッ酸を使用すると、1 mm × 1 mm の PZT セクションを削除できます。これ下 sro 表面電極を明らかにし、多くの小さなフレキシブル強誘電体キャパシタを形成するためです。 注: は SRO 下部電極として育ち、DC は図 3に示すように PZT 薄膜の電子特性を測定する多くの小さなコンデンサーを形成するスパッタリングによる薄膜の電極上に Pt を入金します。</li>
	<li>下部 sro 表面電極の電気伝導率を増加する露出 sro 表面に導電性銀のコートをペイントします。導電性の銀が露出した SRO を連絡できるを確認します。</li>
</ol>2 強誘電体特性評価
<ol><li>曲げ試験<ol>
<li>柔軟なサンプルの裏面には、1 つのステージから別のサンプルの簡単転送のサンプルと同じサイズの紙の部分に接着します。</li>
		<li>強誘電体テスト システムや半導体デバイス ・ アナライザーのテスト基板上の PZT/マイカを配置します。</li>
		<li>強誘電体テスト システムや半導体デバイス ・ アナライザーの 1 つの測定プローブを pt トップに置いて分極電界 (P E) ヒステリシス ループを取得する銀 SRO レイヤーに他の測定プローブを置くとサンプルは曲がった曲線を容量電界 (C E)。<ol>
<li>P-E ヒステリシス ループを 2 kHz の周波数で 2 つのプローブで測定し、4 で V. メジャー C E カーブの 2 つのプローブ周波数 1 MHz、削除対 4 ベンド解除したサンプル。</li>
		</ol>
</li>
		<li>両面テープを使用して、必要な金型に柔軟な PZT/マイカ薄膜を保護します。測定の間に雲母の滑り/グライダーを避けるために注意してください。</li>
		<li>強誘電体テスト システムや半導体デバイス ・ アナライザーのテスト基板にマウントしています。</li>
		<li>他のプローブに触れる以前に使用した構成に類似したコーティング シルバー (ステップ 2.1.3) 下部 sro 表面電極間 pt トップに 1 つのプローブを置きます。</li>
		<li>P-E ヒステリシス ループと様々 な引張・圧縮曲げ半径 (図 4) の下で C E 曲線を測定します。<ol>
<li>4 V、周波数 1 MHz で 2 つのプローブで 2 つのプローブ周波数 2 kHz、4 v. メジャー C E カーブと P-E ヒステリシス ループを測定します。</li>
		</ol>
</li>
		<li>P E C E 測定が完了したときは、柔軟な PZT サンプルを削除します。</li>
	</ol>
</li>
	<li>熱安定性<ol>
<li>強誘電体テスト システムや半導体デバイス ・ アナライザーのテスト基板上の PZT/マイカを置きます。</li>
		<li>Pt トップに 1 つの測定プローブを入れて、銀 SRO 層の他の測定プローブを置きます。</li>
		<li>サンプルを加熱する温度制御システムを開きます。</li>
		<li>異なる温度 (25 ° C、50 ° C、75 ° C、100 ° C、125 ° C、150 ° C、175 ° C) で P E と C E の測定を実施します。</li>
		<li>測定が行われた後、ヒーター アセンブリの電源を切ります。</li>
	</ol>
</li>
	<li>Cyclability 曲げ<ol>
<li>このセットアップの 2 つの溝に柔軟な PZT/マイカをマウントします。</li>
		<li>モーターの助けを借りてのもう一方の端が曲がっている間サンプルの一方の端を修正します。</li>
		<li>曲げ加工 (図 5) 8 mm 前にモーターの移動 (曲げ) 方向に沿って PZT/マイカ長さを測定するのにには、定規を使用します。</li>
		<li>サンプルの数式によると 5 mm を曲げる動き長さ C を計算する: C=L-2Rsin(L/2R)、L は PZT/マイカ ベンド解除した状態での長さ、R は曲げ半径、C はモーターの移動距離。</li>
		<li>曲げサイクル (1000) コンピューター (図 6) の数を設定します。</li>
		<li>前後モーターの運動を開始する (図 6) の [スタート] ボタンをクリックします。</li>
		<li>サンプルを削除し、強誘電特性を保持するかどうかをチェックする P E を測定します。</li>
	</ol>
</li>
</ol>

<ol>
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著者は開示する競合金融興味を持ってないです。

強誘電性要素の作製の重要なステップは、きれいとも/フラット基板表面の使用にあります。たて劈開マイカ表面は平坦ですが、表示される分裂を苦しみから表面を防止に注意を払う、PZT 層の堆積後層、クラック、インクルー ジョン等を分割する必要がある、サンプルは下に冷却された、高酸素圧下酸素空孔を減らすために (200-500 Torr)。元場トップ プラチナ電極は、多くの Pt、...

柔軟な不揮発性記憶素子 (NVME) の作製は、フレキシブルな電子機器のポテンシャルを最大限に悪用する重要な役割を果たしています。NVME は、軽量、低コスト、低電力消費、高速スピード、データ ストレージ、情報処理と通信以外の高いストレージ密度機能を特徴とするでしょう。ペロブスカイト型 Pb (Zr, Ti) O3 (PZT) は、その大きな分極、高速偏光スイッチング、高キュリー温度、低保磁力、高圧電係数を考慮したこのようなアプリケーションのための人気のあるシステムとして機能します。強誘電体不揮発性メモリの外部電圧パルスは '0' と '1' で表される 2 つの安定な方向間 2 つ残偏波を切り替えることができます。非揮発性で、ナノ秒内に読み取り/書き込みプロセスを完了できます。有機1,2,3,4,5,6と無機7,8,9,10 NVME ,11,12,13,14,15強誘電性材料はフレキシブル基板上に試行されています。しかし、このような統合は高温成長も劣化したデバイスのパフォーマンス、リーク電流、電気ショートの粗い表面のためのだけでなく基板の無力によって制限されます。代替基板8が薄くなるような戦略の有望な結果にもかかわらず、フレキシブル基板15上のエピタキシャル層転送洗練されたマルチ ステップ プロセスの観点から制限されている生存率に苦しむ、転送、および限られた適用の可能性の予測。
前述の理由により、フレキシブルな電子機器を更に前進させるソフト基板の限られた熱・運用安定性を克服することができる適切な基板を探索するが重要です。自然な白雲母雲母 (KAl2(AlSi3O10) (OH)2) アトミック滑らかな表面、高い熱安定性、化学的不活性、高透明性、機械的柔軟性のようなユニークな機能を有する基板と現在の製造方法との互換性を使用して、効果的にこれらの問題に対処できます。もっとそう、単斜晶雲母の二次元層状構造は格子と基板効果をクランプを抑制することにより、条件に一致する熱を緩和する van der waals 力成長をサポートしています。これらの利点は、機能性酸化物16,17,18,19,20,21,の22、直接成長に悪用されています。 23白雲母に最近では、柔軟なデバイス アプリケーションの観点から。
ここで、まだフレキシブル リード ジルコニウム (pzt) 薄膜の作製は、雲母白雲母上にエピタキシャルを直接成長するプロトコルについて述べる.これは雲母、van der waals 力への結果の多彩な特性に依存するパルス レーザー成膜プロセスによって実現されます。このような捏造の構造は硬い単結晶基板上にエピタキシャル PZT のすべての優れた特性を保持し、優れた熱・機械的安定性を表わします。このシンプルで信頼性の高いアプローチ マルチ ステップ転送と戦略を間伐基板技術の優位性を提供しの前提条件となる待望柔軟かつ単結晶の非揮発性メモリ素子の開発が容易になります高性能な次世代のスマート デバイス。

<table><tbody><tr><td>&lt;strong&gt;Equipment&lt;/strong&gt;</td><td></td><td></td><td></td></tr><tr><td>hot plate</td><td>Polish</td><td>P-20</td><td></td></tr><tr><td>PLD system</td><td>PVD products</td><td>PLD 5000</td><td></td></tr><tr><td>Ferroelectric test system&amp;nbsp;</td><td>Radiant Technologies Precisions workstations&amp;nbsp;</td><td>RT66A</td><td></td></tr><tr><td>Semiconductor device analyzer&amp;nbsp;</td><td>Agilent&amp;nbsp;</td><td>B1500A</td><td></td></tr><tr><td>Bending molds</td><td>home-made</td><td></td><td>Machined teflon material</td></tr><tr><td>Bending stage</td><td>home-built</td><td></td><td>Labview interfaced setup which provides a prescise displacemnt as small as 1 micrometer</td></tr><tr><td>Sputtering system</td><td>Beijing&amp;nbsp;Elaborate</td><td>ETD-3000</td><td></td></tr><tr><td>&lt;strong&gt;Materials&lt;/strong&gt;</td><td></td><td></td><td></td></tr><tr><td>mica(001) sheets</td><td>Nilaco corporation&amp;nbsp;</td><td>990066</td><td></td></tr><tr><td>conductive silver paint</td><td>Ted Pella, INC</td><td>No.16033</td><td></td></tr><tr><td>CoFe&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;4&lt;/sub&gt; target</td><td>Kurt J.Lesker</td><td></td><td></td></tr><tr><td>SrRuO&lt;sub&gt;3&lt;/sub&gt; target</td><td>Kurt J.Lesker</td><td></td><td></td></tr><tr><td>PbZr&lt;sub&gt;0.2&lt;/sub&gt;Ti&lt;sub&gt;0.8&lt;/sub&gt;O&lt;sub&gt;3 &lt;/sub&gt;target</td><td>Kurt J.Lesker</td><td></td><td></td></tr><tr><td>Pt target</td><td>Hefei Ke jing</td><td></td><td></td></tr></tbody></table>

a fabrication and measurement method for a flexible ferroelectric element based on van der waals heteroepitaxy

柔軟な非揮発性メモリとして注目されている多くが適用されるポータブル スマート電子デバイスの将来は、高密度データ記憶域および低消費電力機能に依存します。ただし、フレキシブル基板上に高品質の酸化物ベースの不揮発性メモリは、材料特性と避けられない高温製造工程でならなくなっています。本稿で柔軟なエピタキシャル鉛ジルコニウム チタン酸メモリ要素雲母白雲母を直接成長するプロトコルを提案する.汎用性の高い成膜技術と測定法は、次世代のスマート デバイスに必要な柔軟かつ単結晶の非揮発性メモリ要素の作製を有効にします。

エピタキシャル PZT、SRO、CFO、雲母の薄膜は、ステップ 1 に記載されているパルス レーザー蒸着法と沈殿させた。成長スキーム図 1 図 2 PZT に基づいて実際の柔軟な不揮発性メモリ要素を示しています。

機械安定性、柔軟なデバイス アプリケーションの重要な側面です。?...

Watch this Scientific Journal Video about A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy at JoVE.com

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

この稿ではプロトコルを提案直接まだエピタキシャル成長するフレキシブル リード ジルコニウム チタン酸メモリ要素雲母白雲母。

作製と Van Der waals 力ヘテロエピタキシーに基づくフレキシブル強誘電性要素の測定法

Flexible non-volatile memories have received much attention as they are applicable for portable smart electronic device in the future, relying on ...

a-fabrication-measurement-method-for-flexible-ferroelectric-element

Universidad de Cartagena UDEC

Research

JoVE Journal

Engineering

8.2K ビュー.  Xiangtan University. この稿ではプロトコルを提案直接まだエピタキシャル成長するフレキシブル リード ジルコニウム チタン酸メモリ要素雲母白雲母。

ビデオ: A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Fabrication of Spatially Confined Complex Oxides

Complex materials such as high Tc superconductors, multiferroics, and colossal magnetoresistors have electronic and magnetic properties that arise from the inherent strong electron correlations that reside within them. These materials can also possess electronic phase separation in which regions of vastly different resistive and magnetic behavior can coexist within a single crystal alloy material. By reducing the scale of these materials to length scales at and below the inherent size of the electronic domains, novel behaviors can be exposed. Because of this and the fact that spin-charge-lattice-orbital order parameters each involve correlation lengths, spatially reducing these materials for transport measurements is a critical step in understanding the fundamental physics that drives complex behaviors. These materials also offer great potential to become the next generation of electronic devices 1-3. Thus, the fabrication of low dimensional nano- or micro-structures is extremely important to achieve new functionality. This involves multiple controllable processes from high quality thin film growth to accurate electronic property characterization. Here, we present fabrication protocols of high quality microstructures for complex oxide manganite devices. Detailed descriptions and required equipment of thin film growth, photo-lithography, and wire-bonding are presented.

We describe the use of pulsed laser deposition (PLD), photolithography and wire-bonding techniques to create micrometer scale complex oxides devices. The PLD is utilized to grow epitaxial thin films. Photolithography and wire-bonding techniques are introduced to create practical devices for measurement purposes.

空間的に閉じ込められた複合酸化物の作製

Complex materials such as high Tc superconductors, multiferroics, and colossal magnetoresistors have electronic and magnetic properties that arise from ...

工学

Sputter Growth and Characterization of Metamagnetic B2-ordered FeRh Epilayers

Chemically ordered alloys are useful in a variety of magnetic nanotechnologies. They are most conveniently prepared at an industrial scale using sputtering techniques. Here we describe a method for preparing epitaxial thin films of B2-ordered FeRh by sputter deposition onto single crystal MgO substrates. Deposition at a slow rate onto a heated substrate allows time for the adatoms to both settle into a lattice with a well-defined epitaxial relationship with the substrate and also to find their proper places in the Fe and Rh sublattices of the B2 structure. The structure is conveniently characterized with X-ray reflectometry and diffraction and can be visualised directly using transmission electron micrograph cross-sections. B2-ordered FeRh exhibits an unusual metamagnetic phase transition: the ground state is antiferromagnetic but the alloy transforms into a ferromagnet on heating with a typical transition temperature of about 380 K. This is accompanied by a 1% volume expansion of the unit cell: isotropic in bulk, but laterally clamped in an epilayer. The presence of the antiferromagnetic ground state and the associated first order phase transition is very sensitive to the correct equiatomic stoichiometry and proper B2 ordering, and so is a convenient means to demonstrate the quality of the layers that can be deposited with this approach. We also give some examples of the various techniques by which the change in phase can be detected.

A method to prepare epitaxial layers of ordered alloys by sputtering is described. The B2-ordered FeRh compound is used as an example, as it displays a metamagnetic transition that depends sensitively on the degree of chemical order and the exact composition of the alloy.

メタ磁性B2-命じFeRhエピ層のスパッタ成長と評価

Chemically ordered alloys are useful in a variety of magnetic nanotechnologies. They are most conveniently prepared at an industrial scale using ...

Chemical Vapor Deposition of an Organic Magnet, Vanadium Tetracyanoethylene

Recent progress in the field of organic materials has yielded devices such as organic light emitting diodes (OLEDs) which have advantages not found in traditional materials, including low cost and mechanical flexibility. In a similar vein, it would be advantageous to expand the use of organics into high frequency electronics and spin-based electronics. This work presents a synthetic process for the growth of thin films of the room temperature organic ferrimagnet, vanadium tetracyanoethylene (V[TCNE]x, x~2) by low temperature chemical vapor deposition (CVD). The thin film is grown at &#60;60 &#176;C, and can accommodate a wide variety of substrates including, but not limited to, silicon, glass, Teflon and flexible substrates. The conformal deposition is conducive to pre-patterned and three-dimensional structures as well. Additionally this technique can yield films with thicknesses ranging from 30 nm to several microns. Recent progress in optimization of film growth creates a film whose qualities, such as higher Curie temperature (600 K), improved magnetic homogeneity, and narrow ferromagnetic resonance line-width (1.5 G) show promise for a variety of applications in spintronics and microwave electronics.

We present the synthesis of the organic-based ferrimagnet vanadium tetracyanoethylene (V[TCNE]x, x~2) via low temperature chemical vapor deposition (CVD). This optimized recipe yields an increase in Curie temperature from 400 K to over 600 K and a dramatic improvement in magnetic resonance properties.

有機マグネットの化学気相堆積、バナジウムテトラ

Recent progress in the field of organic materials has yielded devices such as organic light emitting diodes (OLEDs) which have advantages not found in ...

化学

Advanced Experimental Methods for Low-temperature Magnetotransport Measurement of Novel Materials

Novel electronic materials are often produced for the first time by synthesis processes that yield bulk crystals (in contrast to single crystal thin film synthesis) for the purpose of exploratory materials research. Certain materials pose a challenge wherein the traditional bulk Hall bar device fabrication method is insufficient to produce a measureable device for sample transport measurement, principally because the single crystal size is too small to attach wire leads to the sample in a Hall bar configuration. This can be, for example, because the first batch of a new material synthesized yields very small single crystals or because flakes of samples of one to very few monolayers are desired. In order to enable rapid characterization of materials that may be carried out in parallel with improvements to their growth methodology, a method of device fabrication for very small samples has been devised to permit the characterization of novel materials as soon as a preliminary batch has been produced. A slight variation of this methodology is applicable to producing devices using exfoliated samples of two-dimensional materials such as graphene, hexagonal boron nitride (hBN), and transition metal dichalcogenides (TMDs), as well as multilayer heterostructures of such materials. Here we present detailed protocols for the experimental device fabrication of fragments and flakes of novel materials with micron-sized dimensions onto substrate and subsequent measurement in a commercial superconducting magnet, dry helium close-cycle cryostat magnetotransport system at temperatures down to 0.300 K and magnetic fields up to 12 T.

We describe the methodology of mechanical exfoliation and deposition of flakes of novel materials with micron-sized dimensions onto substrate, fabrication of experimental device structures for transport experimentation, and the magnetotransport measurement in a dry helium close-cycle cryostat at temperatures down to 0.300 K and magnetic fields up to 12 T.

新規材料の低温磁気伝導測定のための高度な実験方法

Novel electronic materials are often produced for the first time by synthesis processes that yield bulk crystals (in contrast to single crystal thin film ...

Epitaxial Growth of Perovskite Strontium Titanate on Germanium via Atomic Layer Deposition

Atomic layer deposition (ALD) is a commercially utilized deposition method for electronic materials. ALD growth of thin films offers thickness control and conformality by taking advantage of self-limiting reactions between vapor-phase precursors and the growing film. Perovskite oxides present potential for next-generation electronic materials, but to-date have mostly been deposited by physical methods. This work outlines a method for depositing SrTiO3 (STO) on germanium using ALD. Germanium has higher carrier mobilities than silicon and therefore offers an alternative semiconductor material with faster device operation. This method takes advantage of the instability of germanium's native oxide by using thermal deoxidation to clean and reconstruct the Ge (001) surface to the 2&#215;1 structure. 2-nm thick, amorphous STO is then deposited by ALD. The STO film is annealed under ultra-high vacuum and crystallizes on the reconstructed Ge surface. Reflection high-energy electron diffraction (RHEED) is used during this annealing step to monitor the STO crystallization. The thin, crystalline layer of STO acts as a template for subsequent growth of STO that is crystalline as-grown, as confirmed by RHEED. In situ X-ray photoelectron spectroscopy is used to verify film stoichiometry before and after the annealing step, as well as after subsequent STO growth. This procedure provides framework for additional perovskite oxides to be deposited on semiconductors via chemical methods in addition to the integration of more sophisticated heterostructures already achievable by physical methods.

This work details the procedures for the growth and characterization of crystalline SrTiO3 directly on germanium substrates by atomic layer deposition. The procedure illustrates the ability of an all-chemical growth method to integrate oxides monolithically onto semiconductors for metal-oxide semiconductor devices.

原子層堆積法を介してゲルマニウム上のペロブスカイト型チタン酸ストロンチウムのエピタキシャル成長

Atomic layer deposition (ALD) is a commercially utilized deposition method for electronic materials. ALD growth of thin films offers thickness control and ...

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors

Flexible photodetectors have been intensely studied for the use of curved image sensors, which are a crucial component in bio-inspired imaging systems, but several challenging points remain, such as a low absorption efficiency due to a thin active layer and low flexibility. We present an advanced method to fabricate a flexible phototransistor array with an improved electrical performance. The outstanding electrical performance is driven by a low dark current owing to deep impurity doping. Stretchable and flexible metal interconnectors simultaneously offer electrical and mechanical stabilities in a highly deformed state. The protocol explicitly describes the fabrication process of the phototransistor using a thin silicon membrane. By measuring I-V characteristics of the completed device in deformed states, we demonstrate that this approach improves the mechanical and electrical stabilities of the phototransistor array. We expect that this approach to a flexible phototransistor can be widely used for the applications of not only next-generation imaging systems/optoelectronics but also wearable devices such as tactile/pressure/temperature sensors and health monitors.

We present a detailed method to fabricate a deformable lateral NIPIN phototransistor array for curved image sensors. The phototransistor array with an open mesh form, which is composed of thin silicon islands and stretchable metal interconnectors, provides flexibility and stretchability. The parameter analyzer characterizes the electrical property of the fabricated phototransistor.

横 NIPIN フォト トランジスタを用いた柔軟な画像センサーの作製

Flexible photodetectors have been intensely studied for the use of curved image sensors, which are a crucial component in bio-inspired imaging systems, ...

Bulk and Thin Film Synthesis of Compositionally Variant Entropy-stabilized Oxides

Here, we present a procedure for the synthesis of bulk and thin film multicomponent (Mg0.25(1-x)CoxNi0.25(1-x)Cu0.25(1-x)Zn0.25(1-x))O (Co variant) and (Mg0.25(1-x)Co0.25(1-x)Ni0.25(1-x)CuxZn0.25(1-x))O (Cu variant) entropy-stabilized oxides. Phase pure and chemically homogeneous (Mg0.25(1-x)CoxNi0.25(1-x)Cu0.25(1-x)Zn0.25(1-x))O (x = 0.20, 0.27, 0.33) and (Mg0.25(1-x)Co0.25(1-x)Ni0.25(1-x)CuxZn0.25(1-x))O (x = 0.11, 0.27) ceramic pellets are synthesized and used in the deposition of ultra-high quality, phase pure, single crystalline thin films of the target stoichiometry. A detailed methodology for the deposition of smooth, chemically homogeneous, entropy-stabilized oxide thin films by pulsed laser deposition on (001)-oriented MgO substrates is described. The phase and crystallinity of bulk and thin film materials are confirmed using X-ray diffraction. Composition and chemical homogeneity are confirmed by X-ray photoelectron spectroscopy and energy dispersive X-ray spectroscopy. The surface topography of thin films is measured with scanning probe microscopy. The synthesis of high quality, single crystalline, entropy-stabilized oxide thin films enables the study of interface, size, strain, and disorder effects on the properties in this new class of highly disordered oxide materials.

The synthesis of high quality bulk and thin film (Mg0.25(1-x)CoxNi0.25(1-x)Cu0.25(1-x)Zn0.25(1-x))O and (Mg0.25(1-x)Co0.25(1-x)Ni0.25(1-x)CuxZn0.25(1-x))O entropy-stabilized oxides is presented.

バルクと組成バリエーション エントロピー安定化酸化物薄膜合成

Here, we present a procedure for the synthesis of bulk and thin film multicomponent (Mg0.25(1-x)CoxNi0.25(1-x)Cu0.25(1-x)Zn0.25(1-x))O (Co variant) and ...

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Two-dimensional (2D) materials have attracted huge attention due to their unique properties and potential applications. Since wafer scale synthesis of 2D materials is still in nascent stages, scientists cannot fully rely on traditional semiconductor techniques for related research. Delicate processes from locating the materials to electrode definition need to be well controlled. In this article, a universal fabrication protocol required in manufacturing nanoscale electronics, such as 2D quasi-heterojunction bipolar transistors (Q-HBT), and 2D back-gated transistors are demonstrated. This protocol includes the determination of material position, electron beam lithography (EBL), metal electrode definition, et al. A step by step narrative of the fabrication procedures for these devices are also presented. Furthermore, results show that each of the fabricated devices has achieved high performance with high repeatability. This work reveals a comprehensive description of process flow for preparing 2D nano-electronics, enables the research groups to access this information, and pave the way toward future electronics.

The article aims to introduce a standard and reliable fabrication procedure for the development of future low dimensional nanoelectronics.

二次元ナノエレクトロニクスを作製する標準および信頼性の高いメソッド

Two-dimensional (2D) materials have attracted huge attention due to their unique properties and potential applications. Since wafer scale synthesis of 2D ...

Measuring Magnetically-Tuned Ferroelectric Polarization in Liquid Crystals

Materials showing coupling phenomena between magnetism and (ferro)electricity, i.e., magnetoelectric effects, have attracted a great deal of attention due to their potential applications for future device technologies such as sensors and storage. However, conventional approaches, which usually utilize materials containing magnetic metal ions (or radicals), have a major problem: only a few materials have been found to show the coupling phenomena at room temperature. Recently, we proposed a new approach to achieve room-temperature magnetoelectrics. In contrast to conventional approaches, our alternative proposal focuses on a completely different material, a &#34;liquid crystal&#34;, free from magnetic metal ions. In such liquid crystals, a magnetic field can be utilized to control the orientational state of constituent molecules and the corresponding electric polarization through magnetic anisotropy of the molecules; it is an unprecedented mechanism of the magnetoelectric effect. In this context, this paper provides a protocol to measure ferroelectric properties induced by a magnetic field, that is, the direct magnetoelectric effect, in a liquid crystal. With the method detailed here, we successfully detected magnetically-tuned electric polarization in the chiral smectic C phase of a liquid crystal at room temperature. Taken together with the flexibility of constituent molecules, which directly affects the magnetoelectric responses, the introduced method will serve to allow liquid crystal cells to acquire more functions as room-temperature magnetoelectrics and associated optical materials.

In this report, we present a protocol to examine direct magnetoelectric effects, i.e., induction of ferroelectric polarization by applying magnetic fields, in liquid crystals. This protocol provides a unique approach, supported by the softness of liquid crystals, to achieve room-temperature magnetoelectrics.

液晶における強誘電分極の磁場調整を測定

Materials showing coupling phenomena between magnetism and (ferro)electricity, i.e., magnetoelectric effects, have attracted a great deal of attention due ...

Fabricating van der Waals Heterostructures with Precise Rotational Alignment

In this work we describe a technique for creating new crystals (van der Waals heterostructures) by stacking distinct ultrathin layered 2D materials. We demonstrate not only lateral control but, importantly, also control over the angular alignment of adjacent layers. The core of the technique is represented by a home-built transfer setup which allows the user to control the position of the individual crystals involved in the transfer. This is achieved with sub-micrometer (translational) and sub-degree (angular) precision. Prior to stacking them together, the isolated crystals are individually manipulated by custom-designed moving stages that are controlled by a programmed software interface. Moreover, since the entire transfer setup is computer controlled, the user can remotely create precise heterostructures without coming into direct contact with the transfer setup, labeling this technique as &#8220;hands-free&#8221;. In addition to presenting the transfer set-up, we also describe two techniques for preparing the crystals that are subsequently stacked.

In this work we describe a technique that is used to create new crystals (van der Waals heterostructures) by stacking ultrathin layered 2D materials with precise control over position and relative orientation.

精密な回転位置合わせによるファンデルワールスヘテロ構造の製作

In this work we describe a technique for creating new crystals (van der Waals heterostructures) by stacking distinct ultrathin layered 2D materials. We ...

作製と Van Der waals 力ヘテロエピタキシーに基づくフレキシブル強誘電性要素の測定法

要約

さらに動画を探す

この動画の章

空間的に閉じ込められた複合酸化物の作製

メタ磁性B2-命じFeRhエピ層のスパッタ成長と評価

有機マグネットの化学気相堆積、バナジウムテトラ

新規材料の低温磁気伝導測定のための高度な実験方法

原子層堆積法を介してゲルマニウム上のペロブスカイト型チタン酸ストロンチウムのエピタキシャル成長

横 NIPIN フォトトランジスタを用いた柔軟な画像センサーの作製

バルクと組成バリエーションエントロピー安定化酸化物薄膜合成

二次元ナノエレクトロニクスを作製する標準および信頼性の高いメソッド

液晶における強誘電分極の磁場調整を測定

精密な回転位置合わせによるファンデルワールスヘテロ構造の製作

作製と Van Der waals 力ヘテロエピタキシーに基づくフレキシブル強誘電性要素の測定法

要約

さらに動画を探す

この動画の章

空間的に閉じ込められた複合酸化物の作製

メタ磁性B2-命じFeRhエピ層のスパッタ成長と評価

有機マグネットの化学気相堆積、バナジウムテトラ

新規材料の低温磁気伝導測定のための高度な実験方法

原子層堆積法を介してゲルマニウム上のペロブスカイト型チタン酸ストロンチウムのエピタキシャル成長

横 NIPIN フォト トランジスタを用いた柔軟な画像センサーの作製

バルクと組成バリエーション エントロピー安定化酸化物薄膜合成

二次元ナノエレクトロニクスを作製する標準および信頼性の高いメソッド

液晶における強誘電分極の磁場調整を測定

精密な回転位置合わせによるファンデルワールスヘテロ構造の製作

横 NIPIN フォトトランジスタを用いた柔軟な画像センサーの作製

バルクと組成バリエーションエントロピー安定化酸化物薄膜合成