This work was supported by the Ministry of Science and Technology, Taiwan, Republic of China through Grant No. 101-2113-M-001-006-MY3.

TCDAP 12の調製<ol><li>文献の手順13に従うことによってTCDAPを合成します。 </li><li> 10 -6トル12,14の減圧下で、それぞれ、3つの温度340に設定されたゾーン、270、250°Cで、温度勾配昇華法によりTCDAP生成物を精製します。 </li></ol> 2. TCDAP物理的気相成長転送を使用して（PVT）システム14の単結晶を成長させます<ol><li> （1.2センチ、直径と長さ15cm）（長さ5cm）ボートの一端にTCDAPサンプルを入れて、ガラスインナーチューブの中にボートをロードします。 </li><li>長いガラス管（83センチメートル長いと直径2センチ）にインナーチューブをロードし、開口部から約17センチメートルで、それを押してください。 </li><li>水平にラックに固定された銅管（長さ60cm、直径2.5センチ）に長いガラス管をロードします。 TCDAPのボートを加熱帯域ARによって定義された加熱領域の中央に位置していることを確認します銅管をound。 </li><li> 30 CC /分の流量でヘリウムガスとPVTシステムをパージし、次いで310℃に加熱帯を加熱するために変圧器の電源をオンに2日間、この温度で維持します。 </li><li>室温にシステムを冷却した後、インナーチューブから結晶を集めます。 </li></ol> 3.デバイスの製造<ol><li> 30分間ずつ、順番に、バイアルに200μmの厚さの、透明な、プレカットPET基板（×1 cm 2のセンチ）入れて、洗剤溶液、脱イオン水、およびアセトン中で超音波処理することにより、それをきれいに。窒素流により基板を乾燥させます。 </li><li> PET基板上に両面テープを配置します。 </li><li>実体顕微鏡下で結晶を調べます。デバイス製造のための〜5ミリメートルのx〜0.03ミリメートルの寸法を有する結晶を輝く、良い品質を選択します。両面テープ上のPET基板の長さの針状TCDAP結晶を平行に配置し、しっかりと固定します。 </li><li>実体顕微鏡下では、ワットを適用ソース及びドレインとして作用する結晶の両端から延びる線（数mm）におけるマイクロリットルの注射針を介してERベースコロイドグラファイト。乾燥し（0.6〜1ミリメートルでそれを保つため）正確なチャネル長を決定するために、光学顕微鏡下で2グラファイトスポット間の距離を測定するためのコロイド黒鉛で約30分間待ちます。 </li><li>顕微鏡スライド上のPET基板を固定するために、炭素導電性テープを使用してください。堆積チャンバの熱分解管の端部の近くにスライドを置きます。 </li><li>誘電絶縁体の前駆体の0.5グラム、[2.2]パラシクロファンを計量し、熱分解管の入口の近くに配置します。 </li><li> 10 -2 Torrの真空にシステムをポンプダウン。 700°Cの予め設定された温度にチューブを上の中央付近熱分解ゾーンを予め加熱し、この温度で維持します。 </li><li> 150℃に[2.2]パラシクロファンのサンプルを加熱。前駆体の蒸気は熱分解ゾーンを通過することになります重合する熱分解チューブの端部の近くに凝縮したモノマーを得ました。 </li><li>熱分解/重合反応を2時間続けましょう。 </li><li>システムを冷却し、熱分解管からサンプルを取り出します。 </li><li>製造者の指示に従ってプロフィルメータを用いて膜と基板との段差を測定することによって、堆積された誘電体層の厚さを決定します。 </li><li>ゲート電極として機能する結晶上記誘電体層の背面にあるラインのマイクロリットルの注射針を通してイソプロパノールベースのコロイド黒鉛を適用します。 </li></ol> 4.デバイスの性能を測定<ol><li>接続用の下に電極を露出させるために、ソース/ドレイン電極の面積以上の高分子誘電体膜に穴をカットするメスを使用してください。 </li><li>スタンドとクランプの助けを借りて、と接触するようにパラメータアナライザから電極プローブをもたらしますソース/ドレイン/ゲート電極。製造業者の説明書に従って、異なるゲート電位におけるI-V特性を記録します。 注：ここでは、ゲート電位は、15 Vステップで-60 Vから60 Vに設定されています。 </li></ol> 5.曲げ実験<ol><li>異なる半径（14.0ミリメートル、12.4ミリメートル、8.0ミリメートル、および5.8ミリメートル）の円柱周りの柔軟なPET基板の裏面をラップ、引張状態での特性を測定し、真空テープで四方をシリンダーにPET基板を修正するには。 </li><li>ソース/ドレイン/ゲート電極にプローブを接続し、4.2で説明したように異なるゲート電位でのIV特性を測定します。 </li><li>圧縮の状態で測定するために、シリンダーの端の周りにPET基板の表面側の半分をラップ、結晶/ソース/ドレイン/ゲート電極がまだシリンダーに直面しており、そのようなことは、まだ公開されています。 図を参照してください（真空テープでシリンダー上のPET基板を固定してください。5 </stronグラム&gt;）。 </li><li>ソース/ドレイン/ゲート電極にプローブを接続し、4.2で説明したように異なるゲート電位でのIV特性を測定します。 注：デバイス構造の断面図を図4に示します。 1。 </li></ol>

<ol>
	<li>Sekitani, T., Zschieschang, U., Klauk, H., Someya, T. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Flexible+Organic+Transistors+and+Circuits+with+Extreme+Bending+Stability.">Flexible Organic Transistors and Circuits with Extreme Bending Stability.</a> Nat. Mater. 9, 1015-1022 (2010).</li><li>Yang, Y., Ruan, G., Xiang, C., Wang, G., Tour, J. M. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Flexible+Three-Dimensional+Nanoporous+Metal-Based+Energy+Devices.">Flexible Three-Dimensional Nanoporous Metal-Based Energy Devices.</a> J. Am. Chem. Soc. 136, 6187-6190 (2014).</li><li>Zhan, Y., Mei, Y., Zheng, L. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Materials+Capability+and+Device+Performance+in+Flexible+Electronics+for+the+Internet+of+Things.">Materials Capability and Device Performance in Flexible Electronics for the Internet of Things.</a> J. Mater. Chem. C. 2, 1220-1232 (2014).</li><li>Zhang, L., Wang, H., Zhao, Y., Guo, Y., Hu, W., Yu, G., Liu, Y. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Substrate-Free+Ultra-Flexible+Organic+Field-Effect+Transistors+and+Five-Stage+Ring+Oscillators.">Substrate-Free Ultra-Flexible Organic Field-Effect Transistors and Five-Stage Ring Oscillators.</a> Adv. Mater. 25, 5455-5460 (2013).</li><li>Jedaa, A., Halik, M. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Toward+Strain+Resistant+Flexible+Organic+Thin+Film+Transistors.">Toward Strain Resistant Flexible Organic Thin Film Transistors.</a> Appl. Phys. Lett. 95, (2009).</li><li>Nomura, K., Ohta, H., Takagi, A., Kamiya, T., Hirano, M., Hosono, H. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Room-Temperature+Fabrication+of+Transparent+Flexible+Thin-Film+Transistors+Using+Amorphous+Oxide+Semiconductors.">Room-Temperature Fabrication of Transparent Flexible Thin-Film Transistors Using Amorphous Oxide Semiconductors.</a> Nature. 432, 488-492 (2004).</li><li>Sekitani, T., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Bending+Experiment+on+Pentacene+Field-Effect+Transistors+on+Plastic+Films.">Bending Experiment on Pentacene Field-Effect Transistors on Plastic Films.</a> Appl. Phys. Lett. 86, 073511 (2005).</li><li>Tseng, C. -. W., Huang, D. -. C., Tao, Y. -. T. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Organic+Transistor+Memory+with+a+Charge+Storage+Molecular+Double-Floating-Gate+Monolayer.">Organic Transistor Memory with a Charge Storage Molecular Double-Floating-Gate Monolayer.</a> ACS Appl. Mater. Interfaces. 7, 9767-9775 (2015).</li><li>Coropceanu, V., Cornil, J., da Silva Filjo, D. A., Olivier, Y., Silbey, R., Bredas, J. L. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Charge+Transport+in+Organic+Semiconductors.">Charge Transport in Organic Semiconductors.</a> Chem. Rev. 107, 926-952 (2007).</li><li>Briseno, A. L., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=High-Performance+Organic+Single-Crystal+Transistors+on+Flexible+Substrates.">High-Performance Organic Single-Crystal Transistors on Flexible Substrates.</a> Adv. Mater. 18, 2320-2324 (2006).</li><li>Tang, Q., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Organic+Nanowire+Crystals+Combing+Excellent+Device+Performance+and+Mechanical+Flexibility.">Organic Nanowire Crystals Combing Excellent Device Performance and Mechanical Flexibility.</a> Small. 7, 189-193 (2011).</li><li>Islam, M. M., Pola, S., Tao, Y. -. T. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=High+Mobility+N-Channel+Single-Crystal+Field-Effect+Transistors+Based+on+5,7,12,14-Tetrachloro-6,13-Diazapentacene.">High Mobility N-Channel Single-Crystal Field-Effect Transistors Based on 5,7,12,14-Tetrachloro-6,13-Diazapentacene.</a> Chem. Commun. 47, 6356-6358 (2011).</li><li>Weng, S. Z., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Diazapentacene+Derivatives+as+Thin-Film+Transistor+Materials:+Morphology+Control+in+Realizing+High-Field-Effect+Mobility.">Diazapentacene Derivatives as Thin-Film Transistor Materials: Morphology Control in Realizing High-Field-Effect Mobility.</a> ACS Appl. Mater. Interfaces. 1, 2071-2079 (2009).</li><li>Kloc, C., Simpkins, P. G., Siegrist, T., Laudise, R. A. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Physical+Vapor+Growth+of+Centimeter-Sized+Crystals+of+&#913;-Hexathiophene.">Physical Vapor Growth of Centimeter-Sized Crystals of &#913;-Hexathiophene.</a> J. Cryst. Growth. 182, 416-427 (1997).</li></ol>

The authors have nothing to disclose.

この実験では、パラメータの数は、電界効果移動度の正常な測定に影響を与えます。まず、単結晶特性測定のための電界効果デバイスに加工されるのに十分大きくなければなりません。物理気相移送（PVT）メソッドは、大きな結晶を成長させることを可能にするものです。温度およびキャリアガスの流量を調整することにより、半センチメートルまでのサイズの結晶を得ることができます。?...

このようなセンサ、ディスプレイ、ウェアラブルエレクトロニクスなどのソフトの電子デバイスは、現在設計されていると、より積極的に研究し、多くのも近年1,2,3,4に市場で発売されていますされています。有機半導体材料は無機半導体5,6と比較して、低開発費、溶液中でまたは低温で製造することができる能力、及び、特に、それらの柔軟性を含む、それらの固有の利点にこれらの電子デバイスにおいて重要な役割を演じます。これらの電子機器のための一つの特別な配慮は、彼らが頻繁な曲げにさらされることです。曲げは、コンポーネントやデバイス内の材料に歪みを導入しています。このようなデバイスが曲がっているように安定しており、安定した性能が要求されます。トランジスタは、これらの電子機器のほとんどにおいて重要な要素であり、曲げの下での性能が重要です。多くの研究が有機トンを折り曲げて、このパフォーマンスの問題に対処していますヒンフィルムは7,8トランジスタ 。曲げ時のコンダクタンスの変化は、多結晶薄膜中の粒子間の間隔の変化に起因することができるが、聞いて、より根本的な問題は、コンダクタンスは、曲げ時に単結晶内で変更できるかどうかです。有機分子間の電荷輸送が分子と中性および荷電状態9との間の相互変換に関与再編エネルギーと電子結合に強く依存することが認められています。電子結合は、隣接する分子間のフロンティア分子軌道の重なりまでの距離に非常に敏感です。秩序だった結晶の曲げひずみを導入し、結晶内の分子の相対的な位置を変更することができます。これは、単結晶ベースの電界効果トランジスタを用いて試験することができます。一つのレポートには、10を曲げる際に、結晶の厚さの効果を研究するために、フレキシブル基板上のルブレンの単結晶を用います。デ平坦な基板上に作製した銅フタロシアニンナノワイヤー結晶で悪徳11を曲げる際に、より高い移動度を有することが示されました。しかし、異なる方向に曲げられたFETデバイスのプロパティが検討されていません。 分子5,7,12,16テトラクロロ-6,13- diazapentacene（TCDAP）は、n型半導体材料12です。 TCDAPの結晶が持つ単斜パッキングモチーフは3.911Åのセル長で単位セルの軸に沿って隣接する分子間のπ-πスタッキングをシフトしています。結晶は、長い針を与えるために、このパッキング方向に沿って成長します。この方向に沿って測定された最大のn型の電界効果移動度は、CM 2 / V・secで3.39に達しました。脆くて壊れやすい多くの有機結晶とは異なり、TCDAP結晶は非常に柔軟であることが判明しました。この研究では、導電チャネルとしてTCDAPを使用し、フレキシブル基板のO上に単結晶電界効果トランジスタを用意しFポリエチレンテレフタレート（PET）。モビリティは、フレキシブル基板（下向き）またはゲート/誘電側に向かって曲がった（上方）に向かって、デバイスを曲げて、平坦な基板上に結晶を測定した。IVデータは、隣接間のスタッキング/結合距離の変化に基づいて分析しました分子。

<table><tbody><tr><td>Colloidal Graphite (water-based)</td><td>TED PELLA,INC</td><td>NO.16053</td><td></td></tr><tr><td>Colloidal Graphite (IPA-based)</td><td>TED PELLA,INC</td><td>NO.16051</td><td></td></tr><tr><td>[2.2]Paracyclophane, 99%</td><td>Alfa Aesar</td><td>1633-22-3</td><td></td></tr><tr><td>polyethylene terephthalate</td><td>Uni-Onward</td><td></td><td></td></tr><tr><td>Mini-Mite 1,100 &amp;deg;C Tube Furnaces (Single Zone)</td><td>Thermo Scientific</td><td>TF55030A</td><td></td></tr><tr><td>Agilent 4156C Precision Semiconductor Parameter</td><td>Keysight</td><td>HP4156</td><td></td></tr></tbody></table>

effect of bending on the electrical characteristics of flexible organic single crystal-based field-effect transistors

有機半導体における電荷輸送は非常に電子的結合に影響を与え、結晶中の分子充填、に非常に依存しています。しかし、有機半導体は重要な役割を果たしているソフトエレクトロニクス、で、デバイスが曲げられるだろうか繰り返し折り畳まれました。結晶パッキングに曲げ、したがって、電荷輸送の効果は、デバイスの性能に不可欠です。この原稿では、電界効果トランジスタ構成で5,7,12,16テトラクロロ-6,13-​​ diazapentacene（TCDAP）の単結晶を曲げるために、結晶を曲げ時に再現性のIV特性を得るためのプロトコルを記述します。結果は、電荷移動度がほぼ可逆まだ反対の傾向におけるフレキシブル基板結果に調製した電界効果トランジスタを曲げる曲げ方向に依存することを示します。デバイスはトップゲート/誘電体層（上向き、圧縮状態）に向かって折り曲げられてなるとき低下するモビリティ増加ntの結晶/基板側（下方、引張状態）に向かいます。曲率の​​曲げの効果は、より高い曲げ曲率に起因する高い移動度の変化で観察されました。それは、それによって電子的結合およびその後のキャリア輸送能に影響を与える曲げ時に分子間π-πの距離が変化することが示唆されました。

単結晶XRD分析はTCDAP軸に沿ったパッキング分子と拡張π系であることがわかる。 図。 2は TCDAP結晶の粉末XRDにより走査パターンを示しています。鋭いピークの一連の結晶の粉末回折パターンと比較することによって、（0、K、ℓ）面のファミリーにのみ対応し、観測されます。これは、 図2に示すように 、結晶構造が配向されてい?...

Watch this Scientific Journal Video about Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors at JoVE.com

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors

この原稿は、電子的特性測定のための機能デバイスを維持するために、有機単結晶ベースの電界効果トランジスタの曲げ方法を記載しています。結果は、曲げが結晶中のため、フレキシブルエレクトロニクスのに重要である充電ホッピングレート、中の分子間隔の変化を引き起こすことを示唆しています。

フレキシブル有機単結晶ベースの電界効果トランジスタの電気的特性に曲げの影響

The charge transport in an organic semiconductor depends highly on the molecular packing in the crystal, which influences the electronic coupling ...

effect-bending-on-electrical-characteristics-flexible-organic-single

Universidad de Cartagena UDEC

Research

JoVE Journal

Engineering

8.0K ビュー.  Academia Sinica. この原稿は、電子的特性測定のための機能デバイスを維持するために、有機単結晶ベースの電界効果トランジスタの曲げ方法を記載しています。結果は、曲げが結晶中のため、フレキシブルエレクトロニクスのに重要である充電ホッピングレート、中の分子間隔の変化を引き起こすことを示唆しています。 

ビデオ: Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors

Concurrent Quantitative Conductivity and Mechanical Properties Measurements of Organic Photovoltaic Materials using AFM

Organic photovoltaic (OPV) materials are inherently inhomogeneous at the nanometer scale. Nanoscale inhomogeneity of OPV materials affects performance of photovoltaic devices. Thus, understanding of spatial variations in composition as well as electrical properties of OPV materials is of paramount importance for moving PV technology forward.1,2 In this paper, we describe a protocol for quantitative measurements of electrical and mechanical properties of OPV materials with sub-100 nm resolution. Currently, materials properties measurements performed using commercially available AFM-based techniques (PeakForce, conductive AFM) generally provide only qualitative information. The values for resistance as well as Young's modulus measured using our method on the prototypical ITO/PEDOT:PSS/P3HT:PC61BM system correspond well with literature data. The P3HT:PC61BM blend separates onto PC61BM-rich and P3HT-rich domains. Mechanical properties of PC61BM-rich and P3HT-rich domains are different, which allows for domain attribution on the surface of the film. Importantly, combining mechanical and electrical data allows for correlation of the domain structure on the surface of the film with electrical properties variation measured through the thickness of the film.

Organic photovoltaic (OPV) materials are inherently inhomogeneous at the nanometer scale. Nanoscale inhomogeneity of OPV materials affects performance of photovoltaic devices. In this paper, we describe a protocol for quantitative measurements of electrical and mechanical properties of OPV materials with sub-100 nm resolution.

同時定量伝導率およびAFMを用いた有機太陽電池材料の機械的特性の測定

Organic photovoltaic  (OPV) materials are inherently inhomogeneous at the nanometer scale. Nanoscale  inhomogeneity of OPV materials affects performance ...

工学

Strain Sensing Based on Multiscale Composite Materials Reinforced with Graphene Nanoplatelets

The electrical response of NH2-functionalized graphene nanoplatelets composite materials under strain was studied. Two different manufacturing methods are proposed to create the electrical network in this work: (a) the incorporation of the nanoplatelets into the epoxy matrix and (b) the coating of the glass fabric with a sizing filled with the same nanoplatelets. Both types of multiscale composite materials, with an in-plane electrical conductivity of ~10-3 S/m, showed an exponential growth of the electrical resistance as the strain increases due to distancing between adjacent functionalized graphene nanoplatelets and contact loss between overlying ones. The sensitivity of the materials analyzed during this research, using the described procedures, has been shown to be higher than commercially available strain gauges. The proposed procedures for self-sensing of the structural composite material would facilitate the structural health monitoring of components in difficult to access emplacements such as offshore wind power farms. Although the sensitivity of the multiscale composite materials was considerably higher than the sensitivity of metallic foils used as strain gauges, the value reached with NH2 functionalized graphene nanoplatelets coated fabrics was nearly an order of magnitude superior. This result elucidated their potential to be used as smart fabrics to monitor human movements such as bending of fingers or knees. By using the proposed method, the smart fabric could immediately detect the bending and recover instantly. This fact permits precise monitoring of the time of bending as well as the degree of bending.

The integration of conductive nanoparticles, such as graphene nanoplatelets, into glass fiber composite materials creates an intrinsic electrical network susceptible to strain. Here, different methods to obtain strain sensors based on the addition of graphene nanoplatelets into the epoxy matrix or as a coating on glass fabrics are proposed.

グラフェンナノプレートレットとマルチスケール複合材料強化に基づくひずみセンシング

The electrical response of NH2-functionalized graphene nanoplatelets composite materials under strain was studied. Two different manufacturing methods are ...

Sensing of Barrier Tissue Disruption with an Organic Electrochemical Transistor

The gastrointestinal tract is an example of barrier tissue that provides a physical barrier against entry of pathogens and toxins, while allowing the passage of necessary ions and molecules. A breach in this barrier can be caused by a reduction in the extracellular calcium concentration. This reduction in calcium concentration causes a conformational change in proteins involved in the sealing of the barrier, leading to an increase of the paracellular flux. To mimic this effect the calcium chelator ethylene glycol-bis(beta-aminoethyl ether)-N,N,N&#39;,N&#39;-tetra acetic acid (EGTA) was used on a monolayer of cells known to be representative of the gastrointestinal tract. Different methods to detect the disruption of the barrier tissue already exist, such as immunofluorescence and&#160;permeability assays. However, these methods are time-consuming and costly and not suited to dynamic or high-throughput measurements. Electronic methods for measuring barrier tissue integrity also exist for measurement of the transepithelial resistance (TER), however these are often costly and complex. The development of rapid, cheap, and sensitive methods is urgently needed as the integrity of barrier tissue is a key parameter in drug discovery and pathogen/toxin diagnostics. The organic electrochemical transistor (OECT) integrated with barrier tissue forming cells has been shown as a new device capable of dynamically monitoring barrier tissue integrity. The device is able to measure minute variations in ionic flux with unprecedented temporal resolution and sensitivity, in real time, as an indicator of barrier tissue integrity. This new method is based on a simple device that can be compatible with high throughput screening applications and fabricated at low cost.

The Organic Electrochemical Transistor is integrated with live cells and used to monitor ion flux across the gastrointestinal epithelial barrier. In this study, an increase in ion flux, related to disruption of tight junctions, induced by the presence of the calcium chelator EGTA (ethylene glycol-bis(beta-aminoethyl ether)-N,N,N',N'-tetra acetic acid), is measured.

有機電気化学トランジスタにバリア組織破壊の検出

The gastrointestinal tract is an example of barrier tissue that provides a physical barrier against entry of pathogens and toxins, while allowing the ...

生物工学

Preparation of Liquid Crystal Networks for Macroscopic Oscillatory Motion Induced by Light

A strategy based on doped liquid crystalline networks is described to create mechanical self-sustained oscillations of plastic films under continuous light irradiation. The photo-excitation of dopants that can quickly dissipate light into heat, coupled with anisotropic thermal expansion and self-shadowing of the film, gives rise to the self-sustained deformation. The oscillations observed are influenced by the dimensions and the modulus of the film, and by the directionality and intensity of the light. The system developed offers applications in energy conversion and harvesting for soft-robotics and automated systems.
The general method described here consists of creating free-standing liquid crystalline films and characterizing the mechanical and thermal effects observed. The molecular alignment is achieved using alignment layers (rubbed polyimide), commonly used in the display manufacturing industry. To obtain actuators with large deformation, the mesogens are aligned and polymerized in a splay/bend configuration, i.e., with the director of the liquid crystals (LCs) going gradually from planar to homeotropic through the film thickness. Upon irradiation, the mechanical and thermal oscillations obtained are monitored with a high-speed camera. The results are further quantified by image analysis using an image processing program.

The goal of the protocol is to create liquid crystalline polymer films that can mechanically oscillate under continuous light irradiation. We describe in great detail the conception of free-standing films, from the liquid crystal alignment method to the photo-actuation. The experimental protocol applied to prepare this material is broadly applicable.

巨視的揺動運動の光によって誘起される液晶ネットワークの準備

A strategy based on doped liquid crystalline networks is described to create mechanical self-sustained oscillations of plastic films under continuous ...

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

A method of carrier number control by electrolyte gating is demonstrated. We have obtained WS2 thin flakes with atomically flat surface via scotch tape method or individual WS2 nanotubes by dispersing the suspension of WS2 nanotubes. The selected samples have been fabricated into devices by the use of the electron beam lithography and electrolyte is put on the devices. We have characterized the electronic properties of the devices under applying the gate voltage. In the small gate voltage region, ions in the electrolyte are accumulated on the surface of the samples which leads to the large electric potential drop and resultant electrostatic carrier doping at the interface. Ambipolar transfer curve has been observed in this electrostatic doping region. When the gate voltage is further increased, we met another drastic increase of source-drain current which implies that ions are intercalated into layers of WS2 and electrochemical carrier doping is realized. In such electrochemical doping region, superconductivity has been observed. The focused technique provides a powerful strategy for achieving the electric-filed-induced quantum phase transition.

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Here, we present a protocol to control the carrier number in solids by using the electrolyte.

電解質ゲートによって WS2ナノデバイスにおける電子状態の電界制御

A method of carrier number control by electrolyte gating is demonstrated. We have obtained WS2 thin flakes with atomically flat surface via scotch tape ...

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Flexible non-volatile memories have received much attention as they are applicable for portable smart electronic device in the future, relying on high-density data storage and low-power consumption capabilities. However, the high-quality oxide based nonvolatile memory on flexible substrates is often constrained by the material characteristics and the inevitable high-temperature fabrication process. In this paper, a protocol is proposed to directly grow an epitaxial yet flexible lead zirconium titanate memory element on muscovite mica. The versatile deposition technique and measurement method enable the fabrication of flexible yet single-crystalline non-volatile memory elements necessary for the next generation of smart devices.

In this paper, we present a protocol to directly grow an epitaxial yet flexible lead zirconium titanate memory element on muscovite mica.

作製と Van Der waals 力ヘテロエピタキシーに基づくフレキシブル強誘電性要素の測定法

Flexible non-volatile memories have received much attention as they are applicable for portable smart electronic device in the future, relying on ...

Measuring Magnetically-Tuned Ferroelectric Polarization in Liquid Crystals

Materials showing coupling phenomena between magnetism and (ferro)electricity, i.e., magnetoelectric effects, have attracted a great deal of attention due to their potential applications for future device technologies such as sensors and storage. However, conventional approaches, which usually utilize materials containing magnetic metal ions (or radicals), have a major problem: only a few materials have been found to show the coupling phenomena at room temperature. Recently, we proposed a new approach to achieve room-temperature magnetoelectrics. In contrast to conventional approaches, our alternative proposal focuses on a completely different material, a &#34;liquid crystal&#34;, free from magnetic metal ions. In such liquid crystals, a magnetic field can be utilized to control the orientational state of constituent molecules and the corresponding electric polarization through magnetic anisotropy of the molecules; it is an unprecedented mechanism of the magnetoelectric effect. In this context, this paper provides a protocol to measure ferroelectric properties induced by a magnetic field, that is, the direct magnetoelectric effect, in a liquid crystal. With the method detailed here, we successfully detected magnetically-tuned electric polarization in the chiral smectic C phase of a liquid crystal at room temperature. Taken together with the flexibility of constituent molecules, which directly affects the magnetoelectric responses, the introduced method will serve to allow liquid crystal cells to acquire more functions as room-temperature magnetoelectrics and associated optical materials.

In this report, we present a protocol to examine direct magnetoelectric effects, i.e., induction of ferroelectric polarization by applying magnetic fields, in liquid crystals. This protocol provides a unique approach, supported by the softness of liquid crystals, to achieve room-temperature magnetoelectrics.

液晶における強誘電分極の磁場調整を測定

Materials showing coupling phenomena between magnetism and (ferro)electricity, i.e., magnetoelectric effects, have attracted a great deal of attention due ...

High-Contrast and Fast Photorheological Switching of a Twist-Bend Nematic Liquid Crystal

Smart viscoelastic materials that respond to specific stimuli are one of the most attractive classes of materials important to future technologies, such as on-demand switchable adhesion technologies, actuators, molecular clutches, and nano-/microscopic mass transporters. Recently it was found that through a special solid-liquid transition, rheological properties can exhibit significant changes, thus providing suitable smart viscoelastic materials. However, designing materials with such a property is complex, and forward and backward switching times are usually long. Therefore, it is important to explore new working mechanisms to realize solid-liquid transitions, shorten the switching time, and enhance the contrast of rheological properties during switching. Here, a light-induced crystal-liquid phase transition is observed, which is characterized by means of polarizing light microscopy (POM), photorheometry, photo-differential scanning calorimetry (photo-DSC), and X-ray diffraction (XRD). The light-induced crystal-liquid phase transition presents key features such as (1) fast switching of crystal-liquid phases for both forward and backward reactions and (2) a high contrast ratio of viscoelasticity. In the characterization, POM is advantageous in offering information on the spatial distribution of LC molecule orientations, determining the type of liquid crystalline phases appearing in the material, and studying the orientation of LCs. Photorheometry allows measurement of a material&#8217;s rheological properties under light stimuli and can reveal the photorheological switching properties of materials. Photo-DSC is a technique to investigate thermodynamic information of materials in darkness and under light irradiation. Lastly, XRD allows studying of microscopic structures of materials. The goal of this article is to clearly present how to prepare and measure the discussed properties of a photorheological material.

This protocol demonstrates the preparation of a photorheological material that exhibits a solid phase, various liquid crystalline phases, and an isotropic liquid phase by increasing temperature. Presented here are methods for measuring the structure-viscoelasticity relationship of the material.

ツイストベンドネマティック液晶の高コントラストと高速フォトレオロジースイッチング

Smart viscoelastic materials that respond to specific stimuli are one of the most attractive classes of materials important to future technologies, such ...

化学

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors

Aluminum-oxide (Al2O3) is a low cost, easily processable and high dielectric constant insulating material that is particularly appropriate for use as the dielectric layer of thin-film transistors (TFTs). Growth of aluminum-oxide layers from anodization of metallic aluminum films is greatly advantageous when compared to sophisticated processes such as atomic layer deposition (ALD) or deposition methods that demand relatively high temperatures (above 300 &#176;C) such as aqueous combustion or spray-pyrolysis. However, the electrical properties of the transistors are highly dependent on the presence of defects and localized states at the semiconductor/dielectric interface, which are strongly affected by the manufacturing parameters of the anodized dielectric layer. To determine how several fabrication parameters influence the device performance without performing all possible combination of factors, we used a reduced factorial analysis based on a Plackett-Burman design of experiments (DOE). The choice of this DOE permits the use of only 12 experimental runs of combinations of factors (instead of all 256 possibilities) to obtain the optimized device performance. The ranking of the factors by the effect on device responses such as the TFT mobility is possible by applying analysis of variance (ANOVA) to the obtained results.

Anodization parameters for growth of the aluminum-oxide dielectric layer of zinc-oxide thin-film transistors (TFTs) are varied to determine the effects on the electrical parameter responses. Analysis of variance (ANOVA) is applied to a Plackett-Burman design of experiments (DOE) to determine the manufacturing conditions that result in optimized device performance.

薄膜トランジスタの酸化アルミニウム誘電体層に及ぼす陽極化パラメータの効果

Aluminum-oxide (Al2O3) is a low cost, easily processable and high dielectric constant insulating material that is particularly appropriate for use as the ...

A Simple and Scalable Fabrication Method for Organic Electronic Devices on Textiles

Today, wearable electronics devices combine a large variety of functional, stretchable, and flexible technologies. However, in many cases, these devices cannot be worn under everyday conditions. Therefore, textiles are commonly considered the best substrate to accommodate electronic devices in wearable use. In this paper, we describe how to selectively pattern organic electroactive materials on textiles from a solution in an easy and scalable manner. This versatile deposition technique enables the fabrication of wearable organic electronic devices on clothes.

In this paper, we present a protocol to selectively deposit organic materials on textiles, which allows for the direct integration of organic electronic devices with wearables. The fabricated devices can be fully integrated in textiles, respecting their mechanical appearance and enabling sensing capabilities.

テキスタイル上の有機電子デバイスのためのシンプルでスケーラブルな製造方法

Today, wearable electronics devices combine a large variety of functional, stretchable, and flexible technologies. However, in many cases, these devices ...