Name: a fabrication and measurement method for a flexible ferroelectric element based on van der waals heteroepitaxy
Uploaded: 2018-04-08T14:00:00.000+00:00
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Description: Watch this Scientific Journal Video about A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy at JoVE.com

Questo lavoro è stato supportato dalla Fondazione nazionale di scienze naturali della Cina (Grant nn. 11402221 e 11502224), la simulazione di stato chiave laboratorio di intensa pulsata radiazione ed effetto (SKLIPR1513) e Hunan provinciale chiave ricerca e piano di sviluppo (n. 2016 WK 2014).

1. fabbricazione flessibile PZT film sottili
<ol><li>Tagliare un substrato di mica di 1 x 1 cm da un foglio di mica con le forbici.</li>
	<li>Difficoltà questo substrato di mica di 1 x 1 cm su una scrivania utilizzando il nastro biadesivo.</li>
	<li>Utilizzare una pinzetta per peel-off il mica--strati fino allo spessore desiderato (50 µm), misurato con un micrometro.</li>
	<li>Incolla questo appena spaccati substrati di mica su un supporto di substrato 5 ' utilizzando un sottile strato di vernice argento e curarla a 120 ° C su una piastra calda per 10 minuti ad apporre mica su substrato saldamente.</li>
	<li>Mettere il titolare substrato PLD (Pulsed Laser Deposition) nella camera di PLD.</li>
	<li>Selezionare il tasso di ripetizione (ad es., 10 Hz) ed energia (ad esempio, 300 mJ) del laser.</li>
	<li>Spostare la lente di focalizzazione alla posizione impostata.</li>
	<li>Aprire l'otturatore e depositare un 5 nm CoFe2O4 (CFO) [energia del Laser: 300 mJ, pressione dell'ossigeno: 50 mTorr, temperatura del campione: 590 ° C, tempo di deposizione: 5 min] film sottile come uno strato cuscinetto innescando il laser (Figura 1).</li>
	<li>Depositare un 20-80 nm SrRuO3 (SRO) [energia del Laser: 300 mJ, pressione dell'ossigeno: 100 mTorr, temperatura del campione: 680 ° C, tempo di deposizione: 10-30 min] sul livello di buffer CFO come l'elettrodo inferiore per prove successive prestazioni elettriche innescando il (laser Figura 1).</li>
	<li>Deposito a circa 150 nm PZT [energia del Laser: 300 mJ, pressione dell'ossigeno: 100 mTorr, temperatura del campione: 650 ° C, tempo di deposizione: 60 min] sottile pellicola nella parte superiore dell'elettrodo inferiore di SRO innescando il laser (Figura 1).</li>
	<li>Sfiatare la camera usando N2 e rimuovere il campione PZT/mica (Figura 2) quando la temperatura raggiunge la temperatura ambiente.</li>
	<li>Porre il campione su un pezzo di vetro.</li>
	<li>Mettere una mesh predefinita con 200 micron di diametro sulla parte superiore del campione. Fissare bene la mesh e mettere maglia-campione nella camera di sputtering.</li>
	<li>Uso DC sputtering (10 mA, 8 mbar, 6 min) a depositare Pt superiori elettrodi sulla pellicola. Rimuovere il campione dopo il sputtering.</li>
	<li>Utilizzare un coltello o 20% acido HF per rimuovere una sezione PZT di 1 x 1 mm. Si tratta di svelare l'elettrodo di SRO di fondo e formare tanti piccoli condensatori ferroelettrici flessibile. Nota: Crescere SRO come l'elettrodo inferiore e poi depositare Pt sopra gli elettrodi sui film da DC sputtering per formare molti piccoli condensatori per misurare le proprietà elettroniche dei film sottili PZT, che è illustrato nella Figura 3.</li>
	<li>Dipingere un cappotto d'argento conduttivo su OAD esposta per aumentare la conduttività elettrica dell'elettrodo inferiore SRO. Garantire che l'argento conduttivo può contattare l'OAD esposta.</li>
</ol>2. ferroelettrici caratterizzazione
<ol><li>Prova di flessione<ol>
<li>Sul retro del campione flessibile, incollare un pezzo di carta con le stesse dimensioni come il campione per un facile trasferimento del campione da uno stadio a altro.</li>
		<li>Posto il PZT/mica su consiglio di prova dell'analizzatore di dispositivo a semiconduttore e del sistema di test ferroelettrici.</li>
		<li>Mettere una sonda di misura dell'analizzatore di dispositivo a semiconduttore e sistema ferroelettrici prova sull'elettrodo superiore Pt e l'altra sonda di misurazione sullo strato di argento-SRO per ottenere i cicli di isteresi di campo di polarizzazione-elettrico (P-E) e curve di capacità elettrica campo (C-E) mentre il campione è raddrizzato.<ol>
<li>Misurare i cicli di isteresi di P-E con le due sonde ad una frequenza di 2 kHz e alle 4 curve V. misura il C-E con le due sonde ad una frequenza di 1 MHz e a 4 V. Rimuovi il campione raddrizzato.</li>
		</ol>
</li>
		<li>Fissare il flessibile film sottile PZT/mica sullo stampo desiderato utilizzando il nastro biadesivo. Prestare attenzione per evitare lo scivolamento/scorrimento di mica durante la misurazione.</li>
		<li>Montarlo sulla scheda prova dell'analizzatore di dispositivo ferroelettrici test di sistema e dei semiconduttori.</li>
		<li>Mettere una sonda sull'elettrodo superiore Pt mentre l'altra sonda tocca l'elettrodo di SRO di fondo attraverso l'argento rivestimento simile alla configurazione utilizzata in precedenza (punto 2.1.3).</li>
		<li>Misurare la P-E cicli di isteresi e curve C-E in varie trazione e compressione (Figura 4) raggi di curvatura.<ol>
<li>Misurare i cicli di isteresi di P-E con le due sonde ad una frequenza di 2 kHz e alle 4 curve di misura V. il C-E con le due sonde ad una frequenza di 1 MHz e a 4 V.</li>
		</ol>
</li>
		<li>Rimuovere il campione PZT flessibile quando le misurazioni P-E e C-E sono state completate.</li>
	</ol>
</li>
	<li>Stabilità termica<ol>
<li>Mettere la PZT/mica sulla scheda di prova dell'analizzatore di dispositivo a semiconduttore e del sistema di test ferroelettrici.</li>
		<li>Inserire una sonda di misura sull'elettrodo superiore Pt e l'altra sonda di misurazione sullo strato di argento-SRO.</li>
		<li>Aprire il sistema di controllo di temperatura per riscaldare il campione.</li>
		<li>Condurre le misurazioni P-E e C-E a diverse temperature (25 ° C, 50 ° C, 75 ° C, 100 ° C, 125 ° C, 150 ° C, 175 ° C).</li>
		<li>Spegnere il gruppo riscaldatore dopo le misurazioni sono fatto.</li>
	</ol>
</li>
	<li>Prove di flessione ciclabilità<ol>
<li>Montare il flessibile PZT/mica nelle due scanalature di questa configurazione.</li>
		<li>Fissare un'estremità del campione mentre è piegato da altra estremità con l'aiuto di un motore.</li>
		<li>Usare un righello per misurare la lunghezza PZT/mica insieme con la direzione del movimento (flessione) del motore prima del 8 mm piegatura processo (Figura 5).</li>
		<li>Calcolare la lunghezza del movimento C per piegare il campione 5 mm secondo la formula: C=L-2Rsin(L/2R), dove L è la lunghezza di PZT/mica stato raddrizzato, R è il raggio di curvatura, e C è la lunghezza del movimento del motore.</li>
		<li>Impostare il numero di cicli (1000) di piegatura nel computer (Figura 6).</li>
		<li>Fare clic sul pulsante Start (Figura 6) per avviare il movimento del motore avanti e indietro.</li>
		<li>Rimuovere l'esempio e misurare la P-E per verificare se le proprietà ferroelettriche vengono mantenute.</li>
	</ol>
</li>
</ol>

<ol>
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G., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=The+flexible+non-volatile+memory+devices+using+oxide+semiconductors+and+ferroelectric+polymer+poly(vinylidene+fluoride-trifluoroethylene).">The flexible non-volatile memory devices using oxide semiconductors and ferroelectric polymer poly(vinylidene fluoride-trifluoroethylene).</a> Applied Physics Letters. 99 (1), 012901-012903 (2011).</li><li>Kim, R. 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Il passo chiave nella fabbricazione di elementi ferroelettrici risiede nell'uso di una superficie di substrato pulito e persino/piatto. Anche se appena fenduti mica superficie è atomicamente liscia, è necessario prestare attenzione ad evitare che le superfici sofferenza visibile scheggiarsi, split strati, cricche, inclusioni, ecc dopo la deposizione dello strato PZT, il campione è stato raffreddato sotto un pressione di ossigeno ad alta (200-500 Torr) per ridurre i posti vacanti di ossigeno. Ex situ ...

Il successo produzione di elementi di memoria non volatile flessibile (NVME) svolge un ruolo chiave nello sfruttare il pieno potenziale di elettronica flessibile. NVME deve dispongono di peso leggero, basso costo, basso consumo consumo, velocità e capacità di storage ad alta densità oltre alla memorizzazione dei dati, elaborazione dell'informazione e della comunicazione. Pb perovskite (Zr, Ti) O3 (PZT) agisce come un sistema popolare per tali applicazioni, considerando la sua grande polarizzazione, veloce polarizzazione switching, alta temperatura di Curie, basso campo coercitivo e alto coefficente piezoelettrico. Nelle memorie non volatili ferroelettriche, un impulso di tensione esterna può passare le polarizzazioni di due residuo tra due direzioni stabili, rappresentate da '0' e '1'. È non volatile, e il processo di lettura/scrittura può essere completato in nanosecondi. NVME basato su organico1,2,3,4,5,6 e inorganici7,8,9,10 ,11,12,13,14,15 materiali ferroelettrici sono state tentate su substrati flessibili. Tuttavia, tale integrazione è limitata dalla non solo incapacità dei substrati di crescita ad alta temperatura, ma anche le prestazioni del dispositivo degradati, dispersione di corrente e corto circuito elettrico grazie alle loro superfici più ruvide. Nonostante risultati promettenti, si alternano come l'assottigliamento del substrato8 strategie e il trasferimento di strato epitassiale su un substrato flessibile15 soffrire limitata redditività in considerazione il sofisticato processo multifasico, il imprevedibilità del trasferimento e la limitata applicabilità.
Per tali ragioni è fondamentale per esplorare un substrato appropriato che è in grado di superare la limitata stabilità termica e operativa di substrati morbidi per avanzare ulteriormente elettronica flessibile. Una mica muscovite naturale (KAl2(AlSi3O10) (OH)2) substrato con caratteristiche uniche come atomicamente lisciare superfici, elevata stabilità termica, inerzia chimica, elevata trasparenza, flessibilità meccanica, e compatibilità con i metodi attuali di fabbricazione può essere utilizzato per affrontare efficacemente questi problemi. Più così, la struttura a strati bidimensionale di mica monoclino supporta epitassia di van der Waals, che mitiga la grata e termico corrispondenti condizioni, quindi significativamente sopprimere il substrato effetto di bloccaggio. Questi vantaggi sono stati sfruttati nella crescita diretta di ossidi funzionali16,17,18,19,20,21,22, 23 il moscovita recentemente, in vista di applicazioni dispositivo flessibile.
Qui, descriviamo un protocollo per crescere direttamente epitassiale film sottili di piombo ma flessibile zirconio titanato (PZT) su mica muscovite. Ciò è ottenuto attraverso un processo di deposizione laser pulsato basandosi sulle proprietà versatili di mica, con conseguente eteroepitassia di van der Waals. Tali strutture fabbricate conservano tutte le proprietà superiori di PZT epitassiali su substrati cristallini singoli rigidi ed esibisce eccellente stabilità termica e meccanica. Questo approccio semplice ed affidabile fornisce un vantaggio tecnologico rispetto multistep-trasferimento e substrato assottigliamento strategie e facilita lo sviluppo di elementi molto atteso flessibile ma single-cristallina memoria non-volatile dei prerequisiti per dispositivi intelligenti di nuova generazione ad alte prestazioni.

<table><tbody><tr><td>&lt;strong&gt;Equipment&lt;/strong&gt;</td><td></td><td></td><td></td></tr><tr><td>hot plate</td><td>Polish</td><td>P-20</td><td></td></tr><tr><td>PLD system</td><td>PVD products</td><td>PLD 5000</td><td></td></tr><tr><td>Ferroelectric test system&amp;nbsp;</td><td>Radiant Technologies Precisions workstations&amp;nbsp;</td><td>RT66A</td><td></td></tr><tr><td>Semiconductor device analyzer&amp;nbsp;</td><td>Agilent&amp;nbsp;</td><td>B1500A</td><td></td></tr><tr><td>Bending molds</td><td>home-made</td><td></td><td>Machined teflon material</td></tr><tr><td>Bending stage</td><td>home-built</td><td></td><td>Labview interfaced setup which provides a prescise displacemnt as small as 1 micrometer</td></tr><tr><td>Sputtering system</td><td>Beijing&amp;nbsp;Elaborate</td><td>ETD-3000</td><td></td></tr><tr><td>&lt;strong&gt;Materials&lt;/strong&gt;</td><td></td><td></td><td></td></tr><tr><td>mica(001) sheets</td><td>Nilaco corporation&amp;nbsp;</td><td>990066</td><td></td></tr><tr><td>conductive silver paint</td><td>Ted Pella, INC</td><td>No.16033</td><td></td></tr><tr><td>CoFe&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;4&lt;/sub&gt; target</td><td>Kurt J.Lesker</td><td></td><td></td></tr><tr><td>SrRuO&lt;sub&gt;3&lt;/sub&gt; target</td><td>Kurt J.Lesker</td><td></td><td></td></tr><tr><td>PbZr&lt;sub&gt;0.2&lt;/sub&gt;Ti&lt;sub&gt;0.8&lt;/sub&gt;O&lt;sub&gt;3 &lt;/sub&gt;target</td><td>Kurt J.Lesker</td><td></td><td></td></tr><tr><td>Pt target</td><td>Hefei Ke jing</td><td></td><td></td></tr></tbody></table>

a fabrication and measurement method for a flexible ferroelectric element based on van der waals heteroepitaxy

Memorie non-volatili flessibile hanno ricevuto molta attenzione in quanto sono applicabili per dispositivo elettronico intelligente in futuro, basandosi sulla memorizzazione dei dati ad alta densità e funzionalità a basso consumo energetico. Tuttavia, la memoria non volatile di ossido di alta qualità basato su substrati flessibili spesso è limitata dalla caratteristiche del materiale e del processo di fabbricazione ad alta temperatura inevitabile. In questa carta, un protocollo è proposto a crescere direttamente un epitassiale ma flessibile piombo zirconio titanato memoria elemento su mica muscovite. Il metodo di misura e tecnica di deposizione versatili permettono la fabbricazione di elementi di memoria non-volatile flessibile ma single-cristallino necessari per la prossima generazione di dispositivi intelligenti.

Film sottili epitassiali PZT/SRO/CFO/mica sono stati depositati con la tecnica di deposizione laser pulsato come indicato nel passaggio 1. La figura 1 Mostra lo schema di crescita e la figura 2 Mostra un effettivo elemento NVM flessibile basato sul PZT.

Stabilità meccanica è un aspetto cruciale dell'applicazione dispositivo flessibile. Le prestazioni ferroelet...

Watch this Scientific Journal Video about A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy at JoVE.com

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

In questa carta, presentiamo un protocollo a crescere direttamente un epitassiale ancora elemento di memoria titanato di piombo flessibile zirconio su mica muscovite.

Una fabbricazione e un metodo di misurazione per un elemento ferroelettrico flessibile basato su eteroepitassia di Van Der Waals

Flexible non-volatile memories have received much attention as they are applicable for portable smart electronic device in the future, relying on ...

a-fabrication-measurement-method-for-flexible-ferroelectric-element

Universidad de Cartagena UDEC

Research

JoVE Journal

Engineering

8.2K Views.  Xiangtan University. In questa carta, presentiamo un protocollo a crescere direttamente un epitassiale ancora elemento di memoria titanato di piombo flessibile zirconio su mica muscovite.

Video: A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Fabrication of Spatially Confined Complex Oxides

Complex materials such as high Tc superconductors, multiferroics, and colossal magnetoresistors have electronic and magnetic properties that arise from the inherent strong electron correlations that reside within them. These materials can also possess electronic phase separation in which regions of vastly different resistive and magnetic behavior can coexist within a single crystal alloy material. By reducing the scale of these materials to length scales at and below the inherent size of the electronic domains, novel behaviors can be exposed. Because of this and the fact that spin-charge-lattice-orbital order parameters each involve correlation lengths, spatially reducing these materials for transport measurements is a critical step in understanding the fundamental physics that drives complex behaviors. These materials also offer great potential to become the next generation of electronic devices 1-3. Thus, the fabrication of low dimensional nano- or micro-structures is extremely important to achieve new functionality. This involves multiple controllable processes from high quality thin film growth to accurate electronic property characterization. Here, we present fabrication protocols of high quality microstructures for complex oxide manganite devices. Detailed descriptions and required equipment of thin film growth, photo-lithography, and wire-bonding are presented.

We describe the use of pulsed laser deposition (PLD), photolithography and wire-bonding techniques to create micrometer scale complex oxides devices. The PLD is utilized to grow epitaxial thin films. Photolithography and wire-bonding techniques are introduced to create practical devices for measurement purposes.

Fabbricazione di ossidi complessi spazialmente confinati

Complex materials such as high Tc superconductors, multiferroics, and colossal magnetoresistors have electronic and magnetic properties that arise from ...

Ricerca

Ingegneria

Sputter Growth and Characterization of Metamagnetic B2-ordered FeRh Epilayers

Chemically ordered alloys are useful in a variety of magnetic nanotechnologies. They are most conveniently prepared at an industrial scale using sputtering techniques. Here we describe a method for preparing epitaxial thin films of B2-ordered FeRh by sputter deposition onto single crystal MgO substrates. Deposition at a slow rate onto a heated substrate allows time for the adatoms to both settle into a lattice with a well-defined epitaxial relationship with the substrate and also to find their proper places in the Fe and Rh sublattices of the B2 structure. The structure is conveniently characterized with X-ray reflectometry and diffraction and can be visualised directly using transmission electron micrograph cross-sections. B2-ordered FeRh exhibits an unusual metamagnetic phase transition: the ground state is antiferromagnetic but the alloy transforms into a ferromagnet on heating with a typical transition temperature of about 380 K. This is accompanied by a 1% volume expansion of the unit cell: isotropic in bulk, but laterally clamped in an epilayer. The presence of the antiferromagnetic ground state and the associated first order phase transition is very sensitive to the correct equiatomic stoichiometry and proper B2 ordering, and so is a convenient means to demonstrate the quality of the layers that can be deposited with this approach. We also give some examples of the various techniques by which the change in phase can be detected.

A method to prepare epitaxial layers of ordered alloys by sputtering is described. The B2-ordered FeRh compound is used as an example, as it displays a metamagnetic transition that depends sensitively on the degree of chemical order and the exact composition of the alloy.

Polverizzazione crescita e caratterizzazione di Metamagnetic B2-ordinato FeRh Epilayers

Chemically ordered alloys are useful in a variety of magnetic nanotechnologies. They are most conveniently prepared at an industrial scale using ...

Chemical Vapor Deposition of an Organic Magnet, Vanadium Tetracyanoethylene

Recent progress in the field of organic materials has yielded devices such as organic light emitting diodes (OLEDs) which have advantages not found in traditional materials, including low cost and mechanical flexibility. In a similar vein, it would be advantageous to expand the use of organics into high frequency electronics and spin-based electronics. This work presents a synthetic process for the growth of thin films of the room temperature organic ferrimagnet, vanadium tetracyanoethylene (V[TCNE]x, x~2) by low temperature chemical vapor deposition (CVD). The thin film is grown at &#60;60 &#176;C, and can accommodate a wide variety of substrates including, but not limited to, silicon, glass, Teflon and flexible substrates. The conformal deposition is conducive to pre-patterned and three-dimensional structures as well. Additionally this technique can yield films with thicknesses ranging from 30 nm to several microns. Recent progress in optimization of film growth creates a film whose qualities, such as higher Curie temperature (600 K), improved magnetic homogeneity, and narrow ferromagnetic resonance line-width (1.5 G) show promise for a variety of applications in spintronics and microwave electronics.

We present the synthesis of the organic-based ferrimagnet vanadium tetracyanoethylene (V[TCNE]x, x~2) via low temperature chemical vapor deposition (CVD). This optimized recipe yields an increase in Curie temperature from 400 K to over 600 K and a dramatic improvement in magnetic resonance properties.

Chemical Vapor Deposition di un magnete biologico, Vanadium Tetracyanoethylene

Recent progress in the field of organic materials has yielded devices such as organic light emitting diodes (OLEDs) which have advantages not found in ...

Chimica

Advanced Experimental Methods for Low-temperature Magnetotransport Measurement of Novel Materials

Novel electronic materials are often produced for the first time by synthesis processes that yield bulk crystals (in contrast to single crystal thin film synthesis) for the purpose of exploratory materials research. Certain materials pose a challenge wherein the traditional bulk Hall bar device fabrication method is insufficient to produce a measureable device for sample transport measurement, principally because the single crystal size is too small to attach wire leads to the sample in a Hall bar configuration. This can be, for example, because the first batch of a new material synthesized yields very small single crystals or because flakes of samples of one to very few monolayers are desired. In order to enable rapid characterization of materials that may be carried out in parallel with improvements to their growth methodology, a method of device fabrication for very small samples has been devised to permit the characterization of novel materials as soon as a preliminary batch has been produced. A slight variation of this methodology is applicable to producing devices using exfoliated samples of two-dimensional materials such as graphene, hexagonal boron nitride (hBN), and transition metal dichalcogenides (TMDs), as well as multilayer heterostructures of such materials. Here we present detailed protocols for the experimental device fabrication of fragments and flakes of novel materials with micron-sized dimensions onto substrate and subsequent measurement in a commercial superconducting magnet, dry helium close-cycle cryostat magnetotransport system at temperatures down to 0.300 K and magnetic fields up to 12 T.

We describe the methodology of mechanical exfoliation and deposition of flakes of novel materials with micron-sized dimensions onto substrate, fabrication of experimental device structures for transport experimentation, and the magnetotransport measurement in a dry helium close-cycle cryostat at temperatures down to 0.300 K and magnetic fields up to 12 T.

Metodi sperimentali avanzati per bassa temperatura magnetotrasporto Misura di nuovi materiali

Novel electronic materials are often produced for the first time by synthesis processes that yield bulk crystals (in contrast to single crystal thin film ...

Epitaxial Growth of Perovskite Strontium Titanate on Germanium via Atomic Layer Deposition

Atomic layer deposition (ALD) is a commercially utilized deposition method for electronic materials. ALD growth of thin films offers thickness control and conformality by taking advantage of self-limiting reactions between vapor-phase precursors and the growing film. Perovskite oxides present potential for next-generation electronic materials, but to-date have mostly been deposited by physical methods. This work outlines a method for depositing SrTiO3 (STO) on germanium using ALD. Germanium has higher carrier mobilities than silicon and therefore offers an alternative semiconductor material with faster device operation. This method takes advantage of the instability of germanium's native oxide by using thermal deoxidation to clean and reconstruct the Ge (001) surface to the 2&#215;1 structure. 2-nm thick, amorphous STO is then deposited by ALD. The STO film is annealed under ultra-high vacuum and crystallizes on the reconstructed Ge surface. Reflection high-energy electron diffraction (RHEED) is used during this annealing step to monitor the STO crystallization. The thin, crystalline layer of STO acts as a template for subsequent growth of STO that is crystalline as-grown, as confirmed by RHEED. In situ X-ray photoelectron spectroscopy is used to verify film stoichiometry before and after the annealing step, as well as after subsequent STO growth. This procedure provides framework for additional perovskite oxides to be deposited on semiconductors via chemical methods in addition to the integration of more sophisticated heterostructures already achievable by physical methods.

This work details the procedures for the growth and characterization of crystalline SrTiO3 directly on germanium substrates by atomic layer deposition. The procedure illustrates the ability of an all-chemical growth method to integrate oxides monolithically onto semiconductors for metal-oxide semiconductor devices.

Crescita epitassiale di perovskite titanato di stronzio su Germanio via Atomic Layer Deposition

Atomic layer deposition (ALD) is a commercially utilized deposition method for electronic materials. ALD growth of thin films offers thickness control and ...

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors

Flexible photodetectors have been intensely studied for the use of curved image sensors, which are a crucial component in bio-inspired imaging systems, but several challenging points remain, such as a low absorption efficiency due to a thin active layer and low flexibility. We present an advanced method to fabricate a flexible phototransistor array with an improved electrical performance. The outstanding electrical performance is driven by a low dark current owing to deep impurity doping. Stretchable and flexible metal interconnectors simultaneously offer electrical and mechanical stabilities in a highly deformed state. The protocol explicitly describes the fabrication process of the phototransistor using a thin silicon membrane. By measuring I-V characteristics of the completed device in deformed states, we demonstrate that this approach improves the mechanical and electrical stabilities of the phototransistor array. We expect that this approach to a flexible phototransistor can be widely used for the applications of not only next-generation imaging systems/optoelectronics but also wearable devices such as tactile/pressure/temperature sensors and health monitors.

We present a detailed method to fabricate a deformable lateral NIPIN phototransistor array for curved image sensors. The phototransistor array with an open mesh form, which is composed of thin silicon islands and stretchable metal interconnectors, provides flexibility and stretchability. The parameter analyzer characterizes the electrical property of the fabricated phototransistor.

Fabbricazione di sensore di immagine flessibile basato su Francesca laterale fototransistori

Flexible photodetectors have been intensely studied for the use of curved image sensors, which are a crucial component in bio-inspired imaging systems, ...

Bulk and Thin Film Synthesis of Compositionally Variant Entropy-stabilized Oxides

Here, we present a procedure for the synthesis of bulk and thin film multicomponent (Mg0.25(1-x)CoxNi0.25(1-x)Cu0.25(1-x)Zn0.25(1-x))O (Co variant) and (Mg0.25(1-x)Co0.25(1-x)Ni0.25(1-x)CuxZn0.25(1-x))O (Cu variant) entropy-stabilized oxides. Phase pure and chemically homogeneous (Mg0.25(1-x)CoxNi0.25(1-x)Cu0.25(1-x)Zn0.25(1-x))O (x = 0.20, 0.27, 0.33) and (Mg0.25(1-x)Co0.25(1-x)Ni0.25(1-x)CuxZn0.25(1-x))O (x = 0.11, 0.27) ceramic pellets are synthesized and used in the deposition of ultra-high quality, phase pure, single crystalline thin films of the target stoichiometry. A detailed methodology for the deposition of smooth, chemically homogeneous, entropy-stabilized oxide thin films by pulsed laser deposition on (001)-oriented MgO substrates is described. The phase and crystallinity of bulk and thin film materials are confirmed using X-ray diffraction. Composition and chemical homogeneity are confirmed by X-ray photoelectron spectroscopy and energy dispersive X-ray spectroscopy. The surface topography of thin films is measured with scanning probe microscopy. The synthesis of high quality, single crystalline, entropy-stabilized oxide thin films enables the study of interface, size, strain, and disorder effects on the properties in this new class of highly disordered oxide materials.

The synthesis of high quality bulk and thin film (Mg0.25(1-x)CoxNi0.25(1-x)Cu0.25(1-x)Zn0.25(1-x))O and (Mg0.25(1-x)Co0.25(1-x)Ni0.25(1-x)CuxZn0.25(1-x))O entropy-stabilized oxides is presented.

Massa e sintesi di Film sottile di ossidi compositivamente varianti entropia-stabilizzato

Here, we present a procedure for the synthesis of bulk and thin film multicomponent (Mg0.25(1-x)CoxNi0.25(1-x)Cu0.25(1-x)Zn0.25(1-x))O (Co variant) and ...

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Two-dimensional (2D) materials have attracted huge attention due to their unique properties and potential applications. Since wafer scale synthesis of 2D materials is still in nascent stages, scientists cannot fully rely on traditional semiconductor techniques for related research. Delicate processes from locating the materials to electrode definition need to be well controlled. In this article, a universal fabrication protocol required in manufacturing nanoscale electronics, such as 2D quasi-heterojunction bipolar transistors (Q-HBT), and 2D back-gated transistors are demonstrated. This protocol includes the determination of material position, electron beam lithography (EBL), metal electrode definition, et al. A step by step narrative of the fabrication procedures for these devices are also presented. Furthermore, results show that each of the fabricated devices has achieved high performance with high repeatability. This work reveals a comprehensive description of process flow for preparing 2D nano-electronics, enables the research groups to access this information, and pave the way toward future electronics.

The article aims to introduce a standard and reliable fabrication procedure for the development of future low dimensional nanoelectronics.

Un metodo Standard e affidabile per fabbricare nanoelettronica bidimensionale

Two-dimensional (2D) materials have attracted huge attention due to their unique properties and potential applications. Since wafer scale synthesis of 2D ...

Measuring Magnetically-Tuned Ferroelectric Polarization in Liquid Crystals

Materials showing coupling phenomena between magnetism and (ferro)electricity, i.e., magnetoelectric effects, have attracted a great deal of attention due to their potential applications for future device technologies such as sensors and storage. However, conventional approaches, which usually utilize materials containing magnetic metal ions (or radicals), have a major problem: only a few materials have been found to show the coupling phenomena at room temperature. Recently, we proposed a new approach to achieve room-temperature magnetoelectrics. In contrast to conventional approaches, our alternative proposal focuses on a completely different material, a &#34;liquid crystal&#34;, free from magnetic metal ions. In such liquid crystals, a magnetic field can be utilized to control the orientational state of constituent molecules and the corresponding electric polarization through magnetic anisotropy of the molecules; it is an unprecedented mechanism of the magnetoelectric effect. In this context, this paper provides a protocol to measure ferroelectric properties induced by a magnetic field, that is, the direct magnetoelectric effect, in a liquid crystal. With the method detailed here, we successfully detected magnetically-tuned electric polarization in the chiral smectic C phase of a liquid crystal at room temperature. Taken together with the flexibility of constituent molecules, which directly affects the magnetoelectric responses, the introduced method will serve to allow liquid crystal cells to acquire more functions as room-temperature magnetoelectrics and associated optical materials.

In this report, we present a protocol to examine direct magnetoelectric effects, i.e., induction of ferroelectric polarization by applying magnetic fields, in liquid crystals. This protocol provides a unique approach, supported by the softness of liquid crystals, to achieve room-temperature magnetoelectrics.

Misurare la polarizzazione ferroelettrica magneticamente-sintonizzati in cristalli liquidi

Materials showing coupling phenomena between magnetism and (ferro)electricity, i.e., magnetoelectric effects, have attracted a great deal of attention due ...

Fabricating van der Waals Heterostructures with Precise Rotational Alignment

In this work we describe a technique for creating new crystals (van der Waals heterostructures) by stacking distinct ultrathin layered 2D materials. We demonstrate not only lateral control but, importantly, also control over the angular alignment of adjacent layers. The core of the technique is represented by a home-built transfer setup which allows the user to control the position of the individual crystals involved in the transfer. This is achieved with sub-micrometer (translational) and sub-degree (angular) precision. Prior to stacking them together, the isolated crystals are individually manipulated by custom-designed moving stages that are controlled by a programmed software interface. Moreover, since the entire transfer setup is computer controlled, the user can remotely create precise heterostructures without coming into direct contact with the transfer setup, labeling this technique as &#8220;hands-free&#8221;. In addition to presenting the transfer set-up, we also describe two techniques for preparing the crystals that are subsequently stacked.

In this work we describe a technique that is used to create new crystals (van der Waals heterostructures) by stacking ultrathin layered 2D materials with precise control over position and relative orientation.

Fabbricazione di eterostrutture van der Waals con allineamento rotazionale preciso

In this work we describe a technique for creating new crystals (van der Waals heterostructures) by stacking distinct ultrathin layered 2D materials. We ...