The authors would like to thank the Ministry of Science and Technology of Taiwan, for their financial support of this research under Contract Nos. MOST-102-2923-E-492- 001-MY3 (W. J. Lee) and NSC-102- 2112-M-005-003-MY3 (M. S. Ho). Support from the High-performance Computing of Taiwan in providing huge computing resources to facilitate this research is also gratefully acknowledged.

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Die Autoren haben nichts zu offenbaren.

<html> In dieser Studie zeigen wir die Herstellung einer selbstorganisierenden Monoschicht von C 84 auf einem Si - Substrat durch einen neuartigen Glühprozeß (Abbildung 1). Dieses Verfahren kann auch andere Arten von Nanopartikeln eingebetteten Halbleitersubstrate zur Herstellung verwendet werden. Der C 84 -embedded Si - Substrat auf atomarer Skala mit UHV-STM (Abbildung 2) charakterisiert, Feldemissionsspektrometer, Photolumineszenz - Spektroskopie, MFM und SQUID...

Fulleren - Moleküle und die zusammengesetzten Materialien , die sie enthalten , sind unter den Unterscheidungsnanomaterialien aufgrund ihrer ausgezeichneten strukturellen Eigenschaften, elektrische Leitfähigkeit, mechanische Festigkeit und chemische Eigenschaften 1-4. Diese Materialien haben sich als sehr nützlich in einer Reihe von Bereichen, wie Elektronik, Computer, Brennstoffzellen-Technologie, Solarzellen und Feldemissionstechnologie 5,6. Unter diesen Materialien sind Siliziumkarbid (SiC) Nanopartikel Verbunde haben besondere Aufmerksamkeit aufgrund ihrer breiten Bandlücke, eine hohe thermische Leitfähigkeit und Stabilität, hohe elektrische Durchschlagsfähigkeit und chemische Inertheit empfangen. Diese Vorteile sind besonders offensichtlich, in optoelektronischen Vorrichtungen, Metalloxid-Halbleiter-Feldeffekttransistoren (MOSFET), Leuchtdioden (LEDs) und High-Power-Hochfrequenz und Hochtemperaturanwendungen. hoher Dichte Defekte jedoch häufig auf der Oberfläche beobachtet Conventional Siliziumkarbid haben nachteilige Auswirkungen auf die elektronische Struktur kann, auch auf Geräteausfall 7,8 führt. Trotz der Tatsache, dass die Anwendung von SiC hat seit 1960, ist diese besondere ungelöstes Problem bleibt sucht. Das Ziel dieser Studie war die Herstellung eines C 84 -embedded Si Substrat Heteroübergang und eine nachfolgende Analyse ein umfassendes Verständnis der elektronischen, optoelektronischen, mechanischen, magnetischen und Feldemissionseigenschaften der resultierenden Materialien zu erhalten. Ferner befassten wir uns mit der Frage der Verwendung der numerischen Simulation der Eigenschaften von Nanomaterialien durch die neuartige Anwendung von Molekulardynamik-Berechnungen vorhersagen.

<table border="0" cellpadding="0" cellspacing="0" width="972">
	<tbody>
		<tr height="20">
			<td height="20" style="height:20px;width:216px;">Silicon wafer</td>
			<td style="width:203px;"></td>
			<td style="width:119px;"></td>
			<td style="width:435px;">Si(111) Type/Dopant: P/Boron&#160; Resistivity: 0.05-0.1 Ohm.cm</td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;width:216px;">Carbon,C84</td>
			<td style="width:203px;">Legend Star</td>
			<td style="width:119px;"></td>
			<td>C84 powder, 98%</td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;width:216px;">Hydrochloric acid</td>
			<td style="width:203px;">Sigma-Aldrich</td>
			<td style="width:119px;">84422</td>
			<td>RCA,37%</td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;width:216px;">Ammonium</td>
			<td style="width:203px;">Choneye Pure Chemical</td>
			<td style="width:119px;"></td>
			<td>RCA,25%</td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;width:216px;">Hydrogen peroxide</td>
			<td style="width:203px;">Choneye Pure Chemical</td>
			<td style="width:119px;"></td>
			<td>RCA,35%</td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">Nitrogen&#160;</td>
			<td style="width:203px;">Ni Ni Air</td>
			<td style="width:119px;"></td>
			<td>high-pressure bottle,95%</td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;width:216px;">Tungsten</td>
			<td style="width:203px;">Nilaco</td>
			<td style="width:119px;">461327</td>
			<td>wire, diameter 0.3 mm, tip</td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;width:216px;">Sodium hydroxide</td>
			<td style="width:203px;">UCW</td>
			<td style="width:119px;">85765</td>
			<td>etching Tungsten wire for tip,</td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">Acetone</td>
			<td style="width:203px;">Marcon Fine Chemicals</td>
			<td style="width:119px;">99920</td>
			<td>suitable for liquid chromatography and UV-spectrophotometry</td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;width:216px;">Methanol</td>
			<td style="width:203px;">Marcon Fine Chemicals</td>
			<td style="width:119px;">64837</td>
			<td>suitable for liquid chromatography and UV-spectrophotometry</td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;">UHV-SPM</td>
			<td style="width:203px;">JEOL Ltd</td>
			<td style="width:119px;">JSPM-4500A</td>
			<td>Ultrahigh Vacuum Scanning Tunneling Microscope and Ultrahigh Vacuum Atomic Force Microscope</td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;">Power supply</td>
			<td style="width:203px;">&#160;Keithley&#160;</td>
			<td style="width:119px;">237</td>
			<td>High-Voltage Source-Measure Unit</td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:216px;">SQUID</td>
			<td style="width:203px;">Quantum desigh</td>
			<td style="width:119px;">MPMS-7</td>
			<td>Magnetic field strength: &#177; 7.0 Tesla, Temperature range: 2 ~ 400 K, Magnetic-dipole range:5 &#215; 10^-7 ~ 300 emu</td>
		</tr>
		<tr height="63">
			<td height="63" style="height:63px;width:216px;">ALPS</td>
			<td style="width:203px;">National Center for High-performance Computing, Taiwan</td>
			<td style="width:119px;"></td>
			<td>Advanced Large-scale Parallel Supercluster, 177Tflops; 25,600 CPU cores; 73,728 GB RAM; 1074 TB storage</td>
		</tr>
	</tbody>
</table>

probing c84-embedded si substrate using scanning probe microscopy and molecular dynamics

Dieser Artikel berichtet ein Array gestaltete C 84 -embedded Si Substrat mit einer kontrollierten Selbstorganisation Verfahren in einer Ultrahochvakuumkammer fabriziert werden. Die Eigenschaften des C 84 -embedded Si - Oberfläche, wie atomarer Auflösung Topographie, lokale elektronische Zustandsdichte, Bandlückenenergie, Feldemissionseigenschaften, nanomechanische Steifigkeit und Oberflächenmagnetismus, wurden unter Verwendung einer Vielzahl von Oberflächenanalysetechniken unter Ultra geprüft, Hochvakuum (UHV) sowie in ein atmosphärisches System. Die experimentellen Ergebnisse zeigen die hohe Gleichmäßigkeit der 84 C -embedded Si - Oberfläche eine kontrollierte Selbstorganisation Nanotechnologie Mechanismus Hergestellt mit, eine wichtige Entwicklung bei der Anwendung der Feldemissionsanzeige (FED) repräsentiert, opto - elektronischen Bauelementherstellung, MEMS Schneidwerkzeuge, und bei den Bemühungen um einen geeigneten Ersatz für Hartmetall-Halbleiter zu finden. Molekulardynamik (MD) Verfahren mit semiempirischer Potential be verwendet , um die Nanoindentierung von C 84 -embedded Si - Substrat zu studieren. Eine detaillierte Beschreibung zur Durchführung einer MD-Simulation wird hier vorgestellt. Details für eine umfassende Studie zur mechanischen Analyse der MD-Simulation wie Eindrückkraft, Elastizitätsmodul, Oberflächensteifigkeit, Atom Stress und Atom Stamm enthalten sind. Die Atom Stress und von-Mises-Dehnungsverteilungen des Eindrucks Modell berechnet werden, um Verformungsmechanismus mit Zeitauswertung in atomarer Ebene zu überwachen.

Eine Monoschicht aus C 84 Molekülen auf einer ungeordneten Si (111) -Oberfläche wurde hergestellt in einer UHV - Kammer eine kontrollierte Selbstorganisationsprozess unter Verwendung von Figur 1 zeigt eine Reihe von topographischen Bildern gemessen durch UHV-STM mit verschiedenen Graden der Abdeckung:. (A) 0,01 ML, (b) 0,2 ml, (c) 0,7 ml und (d) 0,9 ml. Die elektronischen und optischen Eigenschaften der C 84 eingebettet Si - Substrat wurden ebenfalls unter Verwendung einer Vielza...

Watch this Scientific Journal Video about Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics at JoVE.com

Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics

This paper reports the nanomaterial fabrication of a fullerene Si substrate inspected and verified by nanomeasurements and molecular dynamic simulation.

Probing C<sub&gt; 84</sub&gt; -embedded Si-Substrat mit Hilfe der Rastersondenmikroskopie und Molecular Dynamics

This paper reports an array-designed C84-embedded Si substrate fabricated using a controlled self-assembly method in an ultra-high vacuum chamber. The ...

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Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics

11.6K Aufrufe.  National Chung Hsing University. This paper reports the nanomaterial fabrication of a fullerene Si substrate inspected and verified by nanomeasurements and molecular dynamic simulation.

Serie: Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics

Probing and Mapping Electrode Surfaces in Solid Oxide Fuel Cells

Solid oxide fuel cells (SOFCs) are potentially the most efficient and cost-effective solution to utilization of a wide variety of fuels beyond hydrogen 1-7. The performance of SOFCs and the rates of many chemical and energy transformation processes in energy storage and conversion devices in general are limited primarily by charge and mass transfer along electrode surfaces and across interfaces. Unfortunately, the mechanistic understanding of these processes is still lacking, due largely to the difficulty of characterizing these processes under in situ conditions. This knowledge gap is a chief obstacle to SOFC commercialization. The development of tools for probing and mapping surface chemistries relevant to electrode reactions is vital to unraveling the mechanisms of surface processes and to achieving rational design of new electrode materials for more efficient energy storage and conversion2. Among the relatively few in situ surface analysis methods, Raman spectroscopy can be performed even with high temperatures and harsh atmospheres, making it ideal for characterizing chemical processes relevant to SOFC anode performance and degradation8-12. It can also be used alongside electrochemical measurements, potentially allowing direct correlation of electrochemistry to surface chemistry in an operating cell. Proper in situ Raman mapping measurements would be useful for pin-pointing important anode reaction mechanisms because of its sensitivity to the relevant species, including anode performance degradation through carbon deposition8, 10, 13, 14 ("coking") and sulfur poisoning11, 15 and the manner in which surface modifications stave off this degradation16. The current work demonstrates significant progress towards this capability. In addition, the family of scanning probe microscopy (SPM) techniques provides a special approach to interrogate the electrode surface with nanoscale resolution. Besides the surface topography that is routinely collected by AFM and STM, other properties such as local electronic states, ion diffusion coefficient and surface potential can also be investigated17-22. In this work, electrochemical measurements, Raman spectroscopy, and SPM were used in conjunction with a novel test electrode platform that consists of a Ni mesh electrode embedded in an yttria-stabilized zirconia (YSZ) electrolyte. Cell performance testing and impedance spectroscopy under fuel containing H2S was characterized, and Raman mapping was used to further elucidate the nature of sulfur poisoning. In situ Raman monitoring was used to investigate coking behavior. Finally, atomic force microscopy (AFM) and electrostatic force microscopy (EFM) were used to further visualize carbon deposition on the nanoscale. From this research, we desire to produce a more complete picture of the SOFC anode.

We present a unique platform for characterizing electrode surfaces in solid oxide fuel cells (SOFCs) that allows simultaneous performance of multiple characterization techniques (e.g. in situ Raman spectroscopy and scanning probe microscopy alongside electrochemical measurements). Complementary information from these analyses may help to advance toward a more profound understanding of electrode reaction and degradation mechanisms, providing insights into rational design of better materials for SOFCs.

Sondieren und Mapping-Elektrode Oberflächen in Solid Oxide Fuel Cells

Solid oxide fuel cells (SOFCs) are potentially the most efficient and cost-effective solution to utilization of a wide variety of fuels beyond hydrogen ...

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Scanning-probe Single-electron Capacitance Spectroscopy

The integration of low-temperature scanning-probe techniques and single-electron capacitance spectroscopy represents a powerful tool to study the electronic quantum structure of small systems - including individual atomic dopants in semiconductors. Here we present a capacitance-based method, known as Subsurface Charge Accumulation (SCA) imaging, which is capable of resolving single-electron charging while achieving sufficient spatial resolution to image individual atomic dopants. The use of a capacitance technique enables observation of subsurface features, such as dopants buried many nanometers beneath the surface of a semiconductor material1,2,3. In principle, this technique can be applied to any system to resolve electron motion below an insulating surface.
As in other electric-field-sensitive scanned-probe techniques4, the lateral spatial resolution of the measurement depends in part on the radius of curvature of the probe tip. Using tips with a small radius of curvature can enable spatial resolution of a few tens of nanometers. This fine spatial resolution allows investigations of small numbers (down to one) of subsurface dopants1,2. The charge resolution depends greatly on the sensitivity of the charge detection circuitry; using high electron mobility transistors (HEMT) in such circuits at cryogenic temperatures enables a sensitivity of approximately 0.01 electrons/Hz&frac12; at 0.3 K 5.

Scanning-probe single-electron capacitance spectroscopy facilitates the study of single-electron motion in localized subsurface regions. A sensitive charge-detection circuit is incorporated into a cryogenic scanning probe microscope to investigate small systems of dopant atoms beneath the surface of semiconductor samples.

Scanning-Probe-Einzel-Elektronen-Spektroskopie Kapazität

The integration of low-temperature scanning-probe techniques and single-electron capacitance spectroscopy represents a powerful tool to study the ...

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Owing to its relativistic low-energy charge carriers, the interaction between graphene and various impurities leads to a wealth of new physics and degrees of freedom to control electronic devices. In particular, the behavior of graphene&#8217;s charge carriers in response to potentials from charged Coulomb impurities is predicted to differ significantly from that of most materials. Scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) can provide detailed information on both the spatial and energy dependence of graphene&#39;s electronic structure in the presence of a charged impurity.&#160;The design of a hybrid impurity-graphene device, fabricated using controlled deposition of impurities onto a back-gated graphene surface, has enabled several novel methods for controllably tuning graphene&#8217;s electronic properties.1-8 Electrostatic gating enables control of the charge carrier density in graphene and the ability to reversibly tune the charge2 and/or molecular5 states of an impurity. This paper outlines the process of fabricating a gate-tunable graphene device decorated with individual Coulomb impurities for combined STM/STS studies.2-5 These studies provide valuable insights into the underlying physics, as well as signposts for designing hybrid graphene devices.

This paper details the fabrication process of a gate-tunable graphene device, decorated with Coulomb impurities for scanning tunneling microscopy studies. Mapping the spatially dependent electronic structure of graphene in the presence of charged impurities unveils the unique behavior of its relativistic charge carriers in response to a local Coulomb potential.

Herstellung von Tor-abstimmbaren Graphene Geräte für Rastertunnelmikroskopie Studies mit Coulomb Verunreinigungen

Owing to its relativistic low-energy charge carriers, the interaction between graphene and various impurities leads to a wealth of new physics and degrees ...

In Depth Analyses of LEDs by a Combination of X-ray Computed Tomography (CT) and Light Microscopy (LM) Correlated with Scanning Electron Microscopy (SEM)

In failure analysis, device characterization and reverse engineering of light emitting diodes (LEDs), and similar electronic components of micro-characterization, plays an important role. Commonly, different techniques like X-ray computed tomography (CT), light microscopy (LM) and scanning electron microscopy (SEM) are used separately. Similarly, the results have to be treated for each technique independently. Here a comprehensive study is shown which demonstrates the potentials leveraged by linking CT, LM and SEM. In depth characterization is performed on a white emitting LED, which can be operated throughout all characterization steps. Major advantages are: planned preparation of defined cross sections, correlation of optical properties to structural and compositional information, as well as reliable identification of different functional regions. This results from the breadth of information available from identical regions of interest (ROIs): polarization contrast, bright and dark-field LM images, as well as optical images of the LED cross section in operation. This is supplemented by SEM imaging techniques and micro-analysis using energy dispersive X-ray spectroscopy.

In Depth Analyses of LEDs by a Combination of X-ray Computed Tomography CT and Light Microscopy LM Correlated with Scanning Electron Microscopy SEM

A workflow for comprehensive micro-characterization of active optical devices is outlined. It contains structural as well as functional investigations by means of CT, LM and SEM. The method is demonstrated for a white LED which can be still be operated during characterization.

In Tiefenanalysen der LEDs durch eine Kombination von Röntgen Computertomographie (CT) und Lichtmikroskopie (LM) korrelierte mit Rasterelektronenmikroskopie (SEM)

In failure analysis, device characterization and reverse engineering of light emitting diodes (LEDs), and similar electronic components of ...

Hand Controlled Manipulation of Single Molecules via a Scanning Probe Microscope with a 3D Virtual Reality Interface

Considering organic molecules as the functional building blocks of future nanoscale technology, the question of how to arrange and assemble such building blocks in a bottom-up approach is still open. The scanning probe microscope (SPM) could be a tool of choice; however, SPM-based manipulation was until recently limited to two dimensions (2D). Binding the SPM tip to a molecule at a well-defined position opens an opportunity of controlled manipulation in 3D space. Unfortunately, 3D manipulation is largely incompatible with the typical 2D-paradigm of viewing and generating SPM data on a computer. For intuitive and efficient manipulation we therefore couple a low-temperature non-contact atomic force/scanning tunneling microscope (LT NC-AFM/STM) to a motion capture system and fully immersive virtual reality goggles. This setup permits &#34;hand controlled manipulation&#34; (HCM), in which the SPM tip is moved according to the motion of the experimenter&#39;s hand, while the tip trajectories as well as the response of the SPM junction are visualized in 3D. HCM paves the way to the development of complex manipulation protocols, potentially leading to a better fundamental understanding of nanoscale interactions acting between molecules on surfaces. Here we describe the setup and the steps needed to achieve successful hand-controlled molecular manipulation within the virtual reality environment.

We demonstrate the precise manipulation of individual organic molecules on a metal surface with the tip of a scanning probe microscope driven in 3D by the experimenter's hand using a motion capture system and fully immersive virtual reality goggles.

Hand kontrollierte Manipulation einzelner Moleküle über ein Rastersondenmikroskop mit einer 3D-Virtual-Reality-Schnittstelle

Considering organic molecules as the functional building blocks of future nanoscale technology, the question of how to arrange and assemble such building ...

Studying Dynamic Processes of Nano-sized Objects in Liquid using Scanning Transmission Electron Microscopy

Samples fully embedded in liquid can be studied at a nanoscale spatial resolution with Scanning Transmission Electron Microscopy (STEM) using a microfluidic chamber assembled in the specimen holder for Transmission Electron Microscopy (TEM) and STEM. The microfluidic system consists of two silicon microchips supporting thin Silicon Nitride (SiN) membrane windows. This article describes the basic steps of sample loading and data acquisition. Most important of all is to ensure that the liquid compartment is correctly assembled, thus providing a thin liquid layer and a vacuum seal. This protocol also includes a number of tests necessary to perform during sample loading in order to ensure correct assembly. Once the sample is loaded in the electron microscope, the liquid thickness needs to be measured. Incorrect assembly may result in a too-thick liquid, while a too-thin liquid may indicate the absence of liquid, such as when a bubble is formed. Finally, the protocol explains how images are taken and how dynamic processes can be studied. A sample containing AuNPs is imaged both in pure water and in saline.

This protocol describes the operation of a liquid flow specimen holder for scanning transmission electron microscopy of AuNPs in water, as used for the observation of nanoscale dynamic processes.

Studium dynamischer Prozesse von Nano-Größe Objekte in Liquid Scanning Transmission Electron Micros mit

Samples fully embedded in liquid can be studied at a nanoscale spatial resolution with Scanning Transmission Electron Microscopy (STEM) using a ...

Precision Milling of Carbon Nanotube Forests Using Low Pressure Scanning Electron Microscopy

A nanoscale fabrication technique appropriate for milling carbon nanotube (CNT) forests is described. The technique utilizes an environmental scanning electron microscope (ESEM) operating with a low pressure water vapor ambient. In this technique, a portion of the electron beam interacts with the water vapor in the vicinity of the CNT sample, dissociating the water molecules into hydroxyl radicals and other species by radiolysis. The remainder of the electron beam interacts with the CNT forest sample, making it susceptible to oxidation from the chemical products of radiolysis. This technique may be used to trim a selected region of an individual CNT, or it may be used to remove hundreds of cubic microns of material by adjusting ESEM parameters. The machining resolution is similar to the imaging resolution of the ESEM itself. The technique produces only small quantities of carbon residue along the boundaries of the cutting zone, with minimal effect on the native structural morphology of the CNT forest.

Low pressure scanning electron microscopy in a water vapor ambient is used to machine nanoscale to microscale features in carbon nanotube forests.

Präzisionsfräsen von Carbon Nanotube Wälder Verwendung von Niederdruck-Rasterelektronenmikroskopie

A nanoscale fabrication technique appropriate for milling carbon nanotube (CNT) forests is described. The technique utilizes an environmental scanning ...

Measurements of Soil Carbon by Neutron-Gamma Analysis in Static and Scanning Modes

The herein described application of the inelastic neutron scattering (INS) method for soil carbon analysis is based on the registration and analysis of gamma rays created when neutrons interact with soil elements. The main parts of the INS system are a pulsed neutron generator, NaI(Tl) gamma detectors, split electronics to separate gamma spectra due to INS and thermo-neutron capture (TNC) processes, and software for gamma spectra acquisition and data processing. This method has several advantages over other methods in that it is a non-destructive in situ method that measures the average carbon content in large soil volumes, is negligibly impacted by local sharp changes in soil carbon, and can be used in stationary or scanning modes. The result of the INS method is the carbon content from a site with a footprint of ~2.5 - 3 m2 in the stationary regime, or the average carbon content of the traversed area in the scanning regime. The measurement range of the current INS system is &#62;1.5 carbon weight % (standard deviation &#177; 0.3 w%) in the upper 10 cm soil layer for a 1 hmeasurement.

Here, we present the protocol for in situ measurement of soil carbon using the neutron-gamma technique for single point measurements (static mode) or field averages (scanning mode). We also describe system construction and elaborate data treatment procedures.

Messungen von Kohlenstoff im Boden durch Neutron-Gamma-Analyse in statische und Scan-Modi

The herein described application of the inelastic neutron scattering (INS) method for soil carbon analysis is based on the registration and analysis of ...

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

The miniaturization of semiconductor devices to scales where small numbers of dopants can control device properties requires the development of new techniques capable of characterizing their dynamics. Investigating single dopants requires sub-nanometer spatial resolution, which motivates the use of scanning tunneling microscopy (STM). However, conventional STM is limited to millisecond temporal resolution. Several methods have been developed to overcome this shortcoming, including all-electronic time-resolved STM, which is used in this study to examine dopant dynamics in silicon with nanosecond resolution. The methods presented here are widely accessible and allow for local measurement of a wide variety of dynamics at the atomic scale. A novel time-resolved scanning tunneling spectroscopy technique is presented and used to efficiently search for dynamics.

We demonstrate an all-electronic method to observe nanosecond-resolved charge dynamics of dopant atoms in silicon with a scanning tunneling microscope.

Vollelektronische Nanosekunde gelöst Scanning Tunneling Microscopy: Erleichterung der Untersuchung der einzelnen Dotierstoff kostenlos Dynamik

The miniaturization of semiconductor devices to scales where small numbers of dopants can control device properties requires the development of new ...

Developing High Performance GaP/Si Heterojunction Solar Cells

To improve the efficiency of Si-based solar cells beyond their Shockley-Queisser limit, the optimal path is to integrate them with III-V-based solar cells. In this work, we present high performance GaP/Si heterojunction solar cells with a high Si minority-carrier lifetime and high crystal quality of epitaxial GaP layers. It is shown that by applying phosphorus (P)-diffusion layers into the Si substrate and a SiNx layer, the Si minority-carrier lifetime can be well-maintained during the GaP growth in the molecular beam epitaxy (MBE). By controlling the growth conditions, the high crystal quality of GaP was grown on the P-rich Si surface. The film quality is characterized by atomic force microscopy and high-resolution x-ray diffraction. In addition, MoOx was implemented as a hole-selective contact that led to a significant increase in the short-circuit current density. The achieved high device performance of the GaP/Si heterojunction solar cells establishes a path for further enhancement of the performance of Si-based photovoltaic devices.

Here, we present a protocol to develop high-performance GaP/Si heterojunction solar cells with a high Si minority-carrier lifetime.

Entwicklung von Hochleistungs-Lücke/Si Heterojunction Solarzellen

To improve the efficiency of Si-based solar cells beyond their Shockley-Queisser limit, the optimal path is to integrate them with III-V-based solar ...

Probing C

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