我们感谢A.从巴伊兰大学Sharoni提供超导膜。这项研究是由欧洲研究理事会资助ERC-2014-STG- 639792支持，居里夫人职业集成格兰特FP7-人2012年CIG-333799，以色列科学基金会资助环球基金系列 - 1102年至1113年。

1.访问扫描SQUID系统<ol><li>使用扫描SQUID系统，其包括芯片9，10，粘滑粗略运动阶段，以及用于精细运动的基于压电的扫描器上制造一个SQUID传感器。 见图1。 </li><li>擦亮鱿鱼片绕成圈拾音一个角落。芯片的材料需要被去除一路拾取循环。 <ol><li>轻轻打磨鱿鱼，使用5到0.5微米的非磁性抛光纸。 注:在抛光阶段之后拾取器环可以带入接近或接触时，与样品。 </li></ol></li></ol> 2.铌（Nb）的薄膜与直流（DC）溅射沉积<ol><li>得到的基板。在这项工作中，使用具有氧化硅的500nm的掺硼的硅衬底。如钛酸锶和MgO其它基底是可能的。 </li><li>到达基地pressu重10 -7乇的在腔室中。预溅射在2.4毫乇的1.8埃/ s的10分钟的沉积速率的压力在室温下用99.95％的Nb靶的蒸发室，在氩气环境中。注意，当在腔室中的基准压力小于10 -7乇沉积过程只能启动。如果压力较高的重复预溅射阶段。 </li><li>放置基板在腔室中。 </li><li>存款铌薄膜通过在含有1.8埃/秒的沉积速率2.4毫托的压力在从99.95％的Nb靶室温溅射，在氩气环境中。 </li></ol> 3.样本尖对准<ol><li>在此阶段，对准传感器芯片与样本，使得运动的旋涡当芯片的顶端，使与样品接触。为了实现这一点，使用至少4°的取向角度。 </li><li>胶上的导电板的柔性悬臂有介电层。然后，胶SQUID志P的悬臂。悬臂和一个静态板之间的电容确定与样品和应力的施加程度的接触。 </li><li>在显微镜载样本。样品粘到一个指定样品用清漆或银膏装入。胶安装于Z压电元件（ 图1a）。 </li><li>在粘滑粗运动系统连接到控制器。 </li><li>的正面和芯片的侧 - 从两个角度设置光学成像。使用两个望远镜放置在翻译阶段，定向到芯片的正面和其一侧。 </li><li>使用Z粘滑粗略运动阶段，从传感器移动样品为1微米的距离，以使该传感器的反射是在样品上可见的。 注意:在这个阶段的样本和传感器之间的接触可能会伤害乌贼。 </li><li>移动样品0.5 - 从传感器1毫米远使用Z粘滑粗略运动阶段，以防止向S损坏镑。 </li><li>旋转定位螺钉（ 图1a），以获得等于前方角度（ 即，角芯片的前端的侧面使得与它的反射， 如图1c所示）。 </li><li>移动样品至1微米距离传感器的距离。检查的角度，必要时重复步骤3.7和3.8。 </li><li>旋转定位螺钉，以得到的传感器和样品（ 图1d）之间4度的角度。确保芯片的前端部，其与样品接触的部分。 </li></ol> 4.测量<ol><li>扫描头（ 图1a）加载到4K的冷却系统。 注:扫描头应该被连接到一个冷板，并通过真空罐包围。导线围绕所述罐的线圈施加外部磁场（几个高斯低字段是足够本研究）。盖此设置与睦金属屏蔽。 </li><li>酷派在马格纳的存在抽动领域，通过周围的显微镜线圈通电。仔细选择的场强以达到所需涡流密度。使用1Φ0 = 20.7克/ 平方微米来计算冷却时间字段。例如，对于在10微米10微米的区域10的涡流，申请2.07 G。 </li><li>为了改变上述超导转变温度的新型涡密度热样品（铌，加热至10 K）。应用新领域。 </li><li>酷样品4.2 K. </li><li>关闭磁场关闭。打开鱿鱼。 </li><li>靠拢使用粘滑粗运动系统鱿鱼样品。 <ol><li>适用于Z-粘滑立方体增加电压移动样品接近SQUID芯片。 </li><li>应用该悬臂和板之间的电压，用于读取使用电容电桥（0.1-1 V典型的）的电容。 </li><li>扫在Z压电元件上的电压。测量悬臂与高原之间的电容即如果出现在电容大的变化，所述样品与所述SQUID芯片接触。 </li><li>如果样品没有做出与芯片接触，重复步骤4.6.1-4.6.3，直到接触观察。 </li><li>可选:使用场运动来调节针尖与样品之间的间隔，因此，接触发生在低电压（0 - 10伏施加在Z压电）。 </li><li>一旦有接触，重复在多个位置，以确定所述表面的倾斜角，并确定样品的相对于传感器的平面，步骤4.6.2-4.6.3。 </li></ol></li><li>扫，以相对于所述传感器的样品移动的X和Y压电元件上的电压。扫描在恒定高度的样品上方，而不针尖与样品之间的接触，以图涡旋分布。由根据X和Y的位置在Z压电改变电压达到一恒定扫描高度，并在4.6限定的平面。 </li><li>选择一个旋涡和扫描腌肉第二它精确地确定其中心的位置。注意，涡流位置是相对于所述SQUID的拾取器循环，而不是到接触点。 </li><li>关闭SQUID关闭。 </li><li>施加电压是比接地电压于z压电和任一抽头更大旁边的涡流中心或通过在样品上缓慢拖动传感器（在与样品接触）到所需的位置扫涡流。涡流将致力于水龙头或扫方向移动。典型的值添加到施加ž压电电压是2-5 V. </li><li>打开鱿鱼。 </li><li>再次图像在一个恒定的高度，而不接触到定位涡流的新位置。 </li></ol>

<ol>
	<li>Olson Reichhardt, C. J., Hastings, M. B. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Do+Vortices+Entangle?.">Do Vortices Entangle?.</a> Phys. Rev. Lett. 92, 157002 (2004).</li><li>Milo&#353;evi&#263;, M. V., Berdiyorov, G. R., Peeters, F. M. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Fluxonic+cellular+automata.">Fluxonic cellular automata.</a> Appl. Phys. Lett. 91, 212501 (2007).</li><li>Kalisky, B., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Scanning+Probe+Manipulation+of+Magnetism+at+the+LaAlO3/SrTiO3+Heterointerface.">Scanning Probe Manipulation of Magnetism at the LaAlO3/SrTiO3 Heterointerface.</a> Nano Lett. 12, 4055-4059 (2012).</li><li>Silva, C. C. D. S., Van de Vondel, J., Morelle, M., Moshchalkov, V. V. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Controlled+multiple+reversals+of+a+ratchet+effect.">Controlled multiple reversals of a ratchet effect.</a> Nature. 440, 651-654 (2006).</li><li>Kalisky, B., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Dynamics+of+single+vortices+in+grain+boundaries:+I-V+characteristics+on+the+femtovolt+scale.">Dynamics of single vortices in grain boundaries: I-V characteristics on the femtovolt scale.</a> Appl. Phys. Lett. 94, 202504 (2009).</li><li>Embon, L., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Probing+dynamics+and+pinning+of+single+vortices+in+superconductors+at+nanometer+scales.">Probing dynamics and pinning of single vortices in superconductors at nanometer scales.</a> Sci. Rep. 5, 7598 (2015).</li><li>Auslaender, O. M., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Mechanics+of+individual+isolated+vortices+in+a+cuprate+superconductor.">Mechanics of individual isolated vortices in a cuprate superconductor.</a> Nature Phys. 5, 35-39 (2008).</li><li>Kalisky, B., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Behavior+of+vortices+near+twin+boundaries+in+underdoped+Ba(Fe1-xCox)2As2.">Behavior of vortices near twin boundaries in underdoped Ba(Fe1-xCox)2As2.</a> Phys. Rev. B. 83, 064511 (2011).</li><li>Huber, M. E., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Gradiometric+micro-SQUID+susceptometer+for+scanning+measurements+of+mesoscopic+samples.">Gradiometric micro-SQUID susceptometer for scanning measurements of mesoscopic samples.</a> Rev. Sci. Instrum. 79, 053704 (2008).</li><li>Koshnick, N. C., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=A+terraced+scanning+super+conducting+quantum+interference+device+susceptometer+with+submicron+pickup+loops.">A terraced scanning super conducting quantum interference device susceptometer with submicron pickup loops.</a> Appl. Phys. Lett. 93, 243101 (2008).</li><li>Kremen, A., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Mechanical+Control+of+Individual+Superconducting+Vortices.">Mechanical Control of Individual Superconducting Vortices.</a> Nano Lett. 16, 1626-1630 (2016).</li></ol>

The authors have nothing to disclose.

旋涡的操纵成功取决于几个关键步骤。它以对准传感器成一角度，以使得芯片的末端将是第一个，使与样品接触是重要的。第二，要注意，施加在样品上的力是通过该芯片安装在悬臂的机械特性决定是很重要的。在弹性体制，所施加的力成比例的偏转中，x，根据虎克定律: F = -kx 其中k是弹簧常数，由杨氏模量的材料制成，并且它的物理尺寸决定的，并且由下式给出 K...

涡流是在纳米磁性物体，形成在2型超导体在外部磁场的存在。在一无缺陷样品，旋涡可以自由移动。然而，在材料的结果，其中对于旋涡能量上有利的降低超导区域不同的缺陷。涡流倾向于装饰这些区域，也被称为钉扎部位。在这种情况下，移动一个涡流所需的力必须大于钉扎力越大。的涡流，如涡流密度，相互作用的强度和范围的性质，可以通过外部场，温度，或样品的几何形状容易地确定。控制这些性质的能力使得它们成为凝聚态行为可以容易地调整，以及合适的候选者良好的模型系统用于电子应用的1，2。个别旋涡的位置的控制是这样的LO的设计必需gical元素。 磁性纳米粒子的机械控制之前已经完成。 Kalisky 等。最近使用扫描超导量子干涉仪（SQUID）研究局部机械应力对铁磁补丁复合氧化物接口3的影响。他们能够通过扫描在接触来改变贴片的方向，按压SQUID的尖端到样品，在这个过程施加到1μN的力。我们已在以移动涡流应用于我们的协议类似的方法。 在涡流操纵现有的研究，运动通过施加电流到样品来实现，从而产生洛伦兹力4，5，6。虽然这种方法是有效的，它不是本地的，并且为了控制单个涡流，则需要额外的制造。涡也可以MANIPulated通过用磁力显微镜（MFM）或用SQUID励磁线圈7,8施加外部磁场，例如。这个方法是有效的和局部的，但这些工具所施加的力小，并且只能在高温下，接近超导体的临界温度克服钉扎力。我们的协议允许在低温（4 K）的有效，本地操作没有样品的额外的制造。 我们用扫描显微镜SQUID形象旋涡。该传感器被制造被抛光成一个角，并粘接在柔性悬臂的硅芯片上。悬臂用于表面的电容传感。该芯片被放置在一个角度的样品，使得接触点是在芯片的顶端。我们通过推动芯片放入样品申请高达2μN的力量。我们移动相对SQUID样品由压电元件。我们移动旋涡通过点击硅尖旁边的一个旋涡，或通过清扫它，触摸旋涡。

<table border="0" cellpadding="0" cellspacing="0" width="837">
	<tbody>
		<tr height="21">
			<td height="21" style="height:21px;width:299px;">stick slip coarse motion system</td>
			<td style="width:207px;">attocube</td>
			<td style="width:135px;">ANPx-101</td>
			<td style="width:199px;">x,y motion</td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:299px;">stick slip coarse motion system</td>
			<td style="width:207px;">attocube</td>
			<td style="width:135px;">ANPz-101</td>
			<td>z motion</td>
		</tr>
		<tr height="42">
			<td height="42" style="height:42px;width:299px;">stick slip coarse motion system controller</td>
			<td style="width:207px;">Attocube</td>
			<td style="width:135px;">ANC 300</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:299px;">high voltage amplifier</td>
			<td style="width:207px;">Attocube</td>
			<td style="width:135px;">ANC 250</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:299px;">data acquisition card</td>
			<td style="width:207px;">National Instruments</td>
			<td style="width:135px;">NI&#160;PCIe-6363</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:299px;">piezo elements</td>
			<td style="width:207px;">Piezo Systems Inc</td>
			<td style="width:135px;">T2C</td>
			<td>non magnetic</td>
		</tr>
		<tr height="42">
			<td height="42" style="height:42px;width:299px;">low noise voltage preamplifier</td>
			<td style="width:207px;">Stanford Research Systems</td>
			<td style="width:135px;">SR 560</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:299px;">capacitance bridge</td>
			<td style="width:207px;">General Radio</td>
			<td style="width:135px;">1615A</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:299px;">telescope</td>
			<td style="width:207px;">NAVITAR</td>
			<td style="width:135px;">1-504516</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:299px;">camera</td>
			<td style="width:207px;">MOTICAM</td>
			<td style="width:135px;">MP2</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:299px;">dewar</td>
			<td style="width:207px;">Cryofab</td>
			<td style="width:135px;">N/A</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:299px;">insert</td>
			<td style="width:207px;">ICE oxford</td>
			<td style="width:135px;">N/A</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:299px;">Mu-metal shield</td>
			<td style="width:207px;">Amuneal</td>
			<td style="width:135px;">N/A</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:299px;">vacuum cap</td>
			<td style="width:207px;">ICE oxford</td>
			<td style="width:135px;">N/A</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:299px;">sputtering system</td>
			<td style="width:207px;">AJA international Inc</td>
			<td style="width:135px;">N/A</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:299px;">lapping film</td>
			<td style="width:207px;">3M</td>
			<td style="width:135px;">261X</td>
			<td>non magnetic</td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:299px;">Nb target</td>
			<td style="width:207px;">Kurt J. Lesker</td>
			<td style="width:135px;">EJTNBXX351A2</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:299px;">GE Varnish</td>
			<td style="width:207px;">CMR-Direct</td>
			<td style="width:135px;">02-33-001</td>
			<td>for cryogenic heatsinking</td>
		</tr>
		<tr height="22">
			<td height="22" style="height:22px;width:299px;">Silver paste</td>
			<td style="width:207px;">Structure Probe Inc</td>
			<td style="width:135px;">05063-AB</td>
			<td></td>
		</tr>
	</tbody>
</table>

scanning squid study of vortex manipulation by local contact

Local, deterministic manipulation of individual vortices in type 2 superconductors is challenging. The ability to control the position of individual vortices is necessary in order to study how vortices interact with each other, with the lattice, and with other magnetic objects. Here, we present a protocol for vortex manipulation in thin superconducting films by local contact, without applying current or magnetic field. Vortices are imaged using a scanning superconducting quantum interference device (SQUID), and vertical stress is applied to the sample by pushing the tip of a silicon chip into the sample, using a piezoelectric element. Vortices are moved by tapping the sample or sweeping it with the silicon tip. Our method allows for effective manipulation of individual vortices, without damaging the film or affecting its topography. We demonstrate how vortices were relocated to distances of up to 0.8 mm. The vortices remained stable at their new location up to five days. With this method, we can control vortices and move them to form complex configurations. This technique for vortex manipulation could also be implemented in applications such as vortex based logic devices.

我们的协议是铌的两个样本，和的NbN的9个样品中数以千计的个人，以及分离涡试验成功。我们通过加热上述锝样品，并在磁场的存在下将其冷却回至4.2K时产生在同一样品新涡流。我们选择了外部磁场以实现所需涡流密度。我们在这里展示这些实验数据。这些结果已经详细通过克里门等人进行了描述。 11。 <p class="jove_content" fo:keep-together.w...

Watch this Scientific Journal Video about Scanning SQUID Study of Vortex Manipulation by Local Contact at JoVE.com

Scanning SQUID Study of Vortex Manipulation by Local Contact

We present a protocol for manipulation of individual vortices in thin superconducting films, using local mechanical contact. The method does not include applying current, magnetic field or additional fabrication steps.

由当地接触式扫描涡操纵SQUID研究

Local, deterministic manipulation of individual vortices in type 2 superconductors is challenging. The ability to control the position of individual ...

scanning-squid-study-of-vortex-manipulation-by-local-contact

Universidad de Cartagena UDEC

Research

JoVE Journal

Engineering

6.8K 次观看.  Bar-Ilan University. We present a protocol for manipulation of individual vortices in thin superconducting films, using local mechanical contact. The method does not include applying current, magnetic field or additional fabrication steps. 

视频: Scanning SQUID Study of Vortex Manipulation by Local Contact

Scanning-probe Single-electron Capacitance Spectroscopy

The integration of low-temperature scanning-probe techniques and single-electron capacitance spectroscopy represents a powerful tool to study the electronic quantum structure of small systems - including individual atomic dopants in semiconductors. Here we present a capacitance-based method, known as Subsurface Charge Accumulation (SCA) imaging, which is capable of resolving single-electron charging while achieving sufficient spatial resolution to image individual atomic dopants. The use of a capacitance technique enables observation of subsurface features, such as dopants buried many nanometers beneath the surface of a semiconductor material1,2,3. In principle, this technique can be applied to any system to resolve electron motion below an insulating surface.
As in other electric-field-sensitive scanned-probe techniques4, the lateral spatial resolution of the measurement depends in part on the radius of curvature of the probe tip. Using tips with a small radius of curvature can enable spatial resolution of a few tens of nanometers. This fine spatial resolution allows investigations of small numbers (down to one) of subsurface dopants1,2. The charge resolution depends greatly on the sensitivity of the charge detection circuitry; using high electron mobility transistors (HEMT) in such circuits at cryogenic temperatures enables a sensitivity of approximately 0.01 electrons/Hz&frac12; at 0.3 K 5.

Scanning-probe single-electron capacitance spectroscopy facilitates the study of single-electron motion in localized subsurface regions. A sensitive charge-detection circuit is incorporated into a cryogenic scanning probe microscope to investigate small systems of dopant atoms beneath the surface of semiconductor samples.

扫描探针单电子电容谱

The integration of low-temperature scanning-probe techniques and single-electron capacitance spectroscopy represents a powerful tool to study the ...

科研

工程学

Analysis of Contact Interfaces for Single GaN Nanowire Devices

Single GaN nanowire (NW) devices fabricated on SiO2 can exhibit a strong degradation after annealing due to the occurrence of void formation at the contact/SiO2 interface. This void formation can cause cracking and delamination of the metal film, which can increase the resistance or lead to a complete failure of the NW device. In order to address issues associated with void formation, a technique was developed that removes Ni/Au contact metal films from the substrates to allow for the examination and characterization of the contact/substrate and contact/NW interfaces of single GaN NW devices. This procedure determines the degree of adhesion of the contact films to the substrate and NWs and allows for the characterization of the morphology and composition of the contact interface with the substrate and nanowires. This technique is also useful for assessing the amount of residual contamination that remains from the NW suspension and from photolithographic processes on the NW-SiO2 surface prior to metal deposition. The detailed steps of this procedure are presented for the removal of annealed Ni/Au contacts to Mg-doped GaN NWs on a SiO2 substrate.

A technique was developed that removes Ni/Au contact metal films from their substrate to allow for the examination and characterization of the contact/substrate and contact/NW interfaces of single GaN nanowire devices.

单氮化镓纳米线设备分析接触界面

Single GaN nanowire (NW) devices fabricated on SiO2 can exhibit  a strong degradation after annealing due to the  occurrence of void formation at the ...

Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds

Monolayer Contact Doping (MLCD) is a simple method for doping of surfaces and nanostructures1. MLCD results in the formation of highly controlled, ultra shallow and sharp doping profiles at the nanometer scale. In MLCD process the dopant source is a monolayer containing dopant atoms.
In this article a detailed procedure for surface doping of silicon substrate as well as silicon nanowires is demonstrated. Phosphorus dopant source was formed using tetraethyl methylenediphosphonate monolayer on a silicon substrate. This monolayer containing substrate was brought to contact with a pristine intrinsic silicon target substrate and annealed while in contact. Sheet resistance of the target substrate was measured using 4 point probe. Intrinsic silicon nanowires were synthesized by chemical vapor deposition (CVD) process using a vapor-liquid-solid (VLS) mechanism; gold nanoparticles were used as catalyst for nanowire growth. The nanowires were suspended in ethanol by mild sonication. This suspension was used to dropcast the nanowires on silicon substrate with a silicon nitride dielectric top layer. These nanowires were doped with phosphorus in similar manner as used for the intrinsic silicon wafer. Standard photolithography process was used to fabricate metal electrodes for the formation of nanowire based field effect transistor (NW-FET). The electrical properties of a representative nanowire device were measured by a semiconductor device analyzer and a probe station.

A detailed procedure for surface doping of Silicon interfaces is provided. The ultra-shallow surface doping is demonstrated by using phosphorus containing monolayers and rapid annealing process. The method can be used for doping of macroscopic area surfaces as well as nanostructures.

Monolayer Contact Doping (MLCD) is a simple method for doping of surfaces and nanostructures1. MLCD results in the formation of highly controlled, ultra ...

In Depth Analyses of LEDs by a Combination of X-ray Computed Tomography (CT) and Light Microscopy (LM) Correlated with Scanning Electron Microscopy (SEM)

In failure analysis, device characterization and reverse engineering of light emitting diodes (LEDs), and similar electronic components of micro-characterization, plays an important role. Commonly, different techniques like X-ray computed tomography (CT), light microscopy (LM) and scanning electron microscopy (SEM) are used separately. Similarly, the results have to be treated for each technique independently. Here a comprehensive study is shown which demonstrates the potentials leveraged by linking CT, LM and SEM. In depth characterization is performed on a white emitting LED, which can be operated throughout all characterization steps. Major advantages are: planned preparation of defined cross sections, correlation of optical properties to structural and compositional information, as well as reliable identification of different functional regions. This results from the breadth of information available from identical regions of interest (ROIs): polarization contrast, bright and dark-field LM images, as well as optical images of the LED cross section in operation. This is supplemented by SEM imaging techniques and micro-analysis using energy dispersive X-ray spectroscopy.

In Depth Analyses of LEDs by a Combination of X-ray Computed Tomography CT and Light Microscopy LM Correlated with Scanning Electron Microscopy SEM

A workflow for comprehensive micro-characterization of active optical devices is outlined. It contains structural as well as functional investigations by means of CT, LM and SEM. The method is demonstrated for a white LED which can be still be operated during characterization.

在通过X射线计算机断层扫描（CT）和与扫描电子显微镜相关光学显微镜（LM）的一个组合的LED深度分析（SEM）的

In failure analysis, device characterization and reverse engineering of light emitting diodes (LEDs), and similar electronic components of ...

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Extended defects such as dislocations and grain boundaries have a strong influence on the performance of microelectronic devices and on other applications of semiconductor materials. However, it is still under debate how the defect structure determines the band structure, and therefore, the recombination behavior of electron-hole pairs responsible for the optical and electrical properties of the extended defects. The present paper is a survey of procedures for the spatially resolved investigation of structural and of physical properties of extended defects in semiconductor materials with a scanning electron microscope (SEM). Representative examples are given for crystalline silicon. The luminescence behavior of extended defects can be investigated by cathodoluminescence (CL) measurements. They are particularly valuable because spectrally and spatially resolved information can be obtained simultaneously. For silicon, with an indirect electronic band structure, CL measurements should be carried out at low temperatures down to 5 K due to the low fraction of radiative recombination processes in comparison to non-radiative transitions at room temperature. For the study of the electrical properties of extended defects, the electron beam induced current (EBIC) technique can be applied. The EBIC image reflects the local distribution of defects due to the increased charge-carrier recombination in their vicinity. The procedure for EBIC investigations is described for measurements at room temperature and at low temperatures. Internal strain fields arising from extended defects can be determined quantitatively by cross-correlation electron backscatter diffraction (ccEBSD). This method is challenging because of the necessary preparation of the sample surface and because of the quality of the diffraction patterns which are recorded during the mapping of the sample. The spatial resolution of the three experimental techniques is compared.

The optical, electrical, and structural properties of dislocations and of grain boundaries in semiconductor materials can be determined by experiments performed in a scanning electron microscope. Electron microscopy has been used to investigate cathodoluminescence, electron beam induced current, and diffraction of backscattered electrons.

通过扫描电子显微镜在半导体材料的扩展缺陷的全面表征

Extended defects such as dislocations and grain boundaries have a strong influence on the performance of microelectronic devices and on other applications ...

Hand Controlled Manipulation of Single Molecules via a Scanning Probe Microscope with a 3D Virtual Reality Interface

Considering organic molecules as the functional building blocks of future nanoscale technology, the question of how to arrange and assemble such building blocks in a bottom-up approach is still open. The scanning probe microscope (SPM) could be a tool of choice; however, SPM-based manipulation was until recently limited to two dimensions (2D). Binding the SPM tip to a molecule at a well-defined position opens an opportunity of controlled manipulation in 3D space. Unfortunately, 3D manipulation is largely incompatible with the typical 2D-paradigm of viewing and generating SPM data on a computer. For intuitive and efficient manipulation we therefore couple a low-temperature non-contact atomic force/scanning tunneling microscope (LT NC-AFM/STM) to a motion capture system and fully immersive virtual reality goggles. This setup permits &#34;hand controlled manipulation&#34; (HCM), in which the SPM tip is moved according to the motion of the experimenter&#39;s hand, while the tip trajectories as well as the response of the SPM junction are visualized in 3D. HCM paves the way to the development of complex manipulation protocols, potentially leading to a better fundamental understanding of nanoscale interactions acting between molecules on surfaces. Here we describe the setup and the steps needed to achieve successful hand-controlled molecular manipulation within the virtual reality environment.

We demonstrate the precise manipulation of individual organic molecules on a metal surface with the tip of a scanning probe microscope driven in 3D by the experimenter's hand using a motion capture system and fully immersive virtual reality goggles.

通过手扫描探针显微镜用三维虚拟现实接口控制单分子的操作

Considering organic molecules as the functional building blocks of future nanoscale technology, the question of how to arrange and assemble such building ...

Use of Sacrificial Nanoparticles to Remove the Effects of Shot-noise in Contact Holes Fabricated by E-beam Lithography

Nano-patterns fabricated with extreme ultraviolet (EUV) or electron-beam (E-beam) lithography exhibit unexpected variations in size. This variation has been attributed to statistical fluctuations in the number of photons/electrons arriving at a given nano-region arising from shot-noise (SN). The SN varies inversely to the square root of a number of photons/electrons. For a fixed dosage, the SN is larger in EUV and E-beam lithographies than for traditional (193 nm) optical lithography. Bottom-up and top-down patterning approaches are combined to minimize the effects of shot noise in nano-hole patterning. Specifically, an amino-silane surfactant self-assembles on a silicon wafer that is subsequently spin-coated with a 100 nm film of a PMMA-based E-beam photoresist. Exposure to the E-beam and the subsequent development uncover the underlying surfactant film at the bottoms of the holes. Dipping the wafer in a suspension of negatively charged, citrate-capped, 20 nm gold nanoparticles (GNP) deposits one particle per hole. The exposed positively charged surfactant film in the hole electrostatically funnels the negatively charged nanoparticle to the center of an exposed hole, which permanently fixes the positional registry. Next, by heating near the glass transition temperature of the photoresist polymer, the photoresist film reflows and engulfs the nanoparticles. This process erases the holes affected by SN but leaves the deposited GNPs locked in place by strong electrostatic binding. Treatment with oxygen plasma exposes the GNPs by etching a thin layer of the photoresist. Wet-etching the exposed GNPs with a solution of I2/KI yields uniform holes located at the center of indentations patterned by E-beam lithography. The experiments presented show that the approach reduces the variation in the size of the holes caused by SN from 35% to below 10%. The method extends the patterning limits of transistor contact holes to below 20 nm.

Uniformly sized nanoparticles can remove fluctuations in contact hole dimensions patterned in poly(methyl methacrylate) (PMMA) photoresist films by electron beam (E-beam) lithography. The process involves electrostatic funneling to center and deposit nanoparticles in contact holes, followed by photoresist reflow and plasma- and wet-etching steps.

牺牲纳米颗粒使用删除散粒噪声的影响通过电子束光刻装配式接触孔

Nano-patterns fabricated with extreme ultraviolet (EUV) or electron-beam (E-beam) lithography exhibit unexpected variations in size. This variation has ...

Precision Milling of Carbon Nanotube Forests Using Low Pressure Scanning Electron Microscopy

A nanoscale fabrication technique appropriate for milling carbon nanotube (CNT) forests is described. The technique utilizes an environmental scanning electron microscope (ESEM) operating with a low pressure water vapor ambient. In this technique, a portion of the electron beam interacts with the water vapor in the vicinity of the CNT sample, dissociating the water molecules into hydroxyl radicals and other species by radiolysis. The remainder of the electron beam interacts with the CNT forest sample, making it susceptible to oxidation from the chemical products of radiolysis. This technique may be used to trim a selected region of an individual CNT, or it may be used to remove hundreds of cubic microns of material by adjusting ESEM parameters. The machining resolution is similar to the imaging resolution of the ESEM itself. The technique produces only small quantities of carbon residue along the boundaries of the cutting zone, with minimal effect on the native structural morphology of the CNT forest.

Low pressure scanning electron microscopy in a water vapor ambient is used to machine nanoscale to microscale features in carbon nanotube forests.

碳纳米管森林精密铣床使用低压扫描电子显微镜

A nanoscale fabrication technique appropriate for milling carbon nanotube (CNT) forests is described. The technique utilizes an environmental scanning ...

Measurements of Soil Carbon by Neutron-Gamma Analysis in Static and Scanning Modes

The herein described application of the inelastic neutron scattering (INS) method for soil carbon analysis is based on the registration and analysis of gamma rays created when neutrons interact with soil elements. The main parts of the INS system are a pulsed neutron generator, NaI(Tl) gamma detectors, split electronics to separate gamma spectra due to INS and thermo-neutron capture (TNC) processes, and software for gamma spectra acquisition and data processing. This method has several advantages over other methods in that it is a non-destructive in situ method that measures the average carbon content in large soil volumes, is negligibly impacted by local sharp changes in soil carbon, and can be used in stationary or scanning modes. The result of the INS method is the carbon content from a site with a footprint of ~2.5 - 3 m2 in the stationary regime, or the average carbon content of the traversed area in the scanning regime. The measurement range of the current INS system is &#62;1.5 carbon weight % (standard deviation &#177; 0.3 w%) in the upper 10 cm soil layer for a 1 hmeasurement.

Here, we present the protocol for in situ measurement of soil carbon using the neutron-gamma technique for single point measurements (static mode) or field averages (scanning mode). We also describe system construction and elaborate data treatment procedures.

静态和扫描模式下中子伽马分析法测量土壤碳

The herein described application of the inelastic neutron scattering (INS) method for soil carbon analysis is based on the registration and analysis of ...

Fabrication of Magnetic Nanostructures on Silicon Nitride Membranes for Magnetic Vortex Studies Using Transmission Microscopy Techniques

Electron and x-ray magnetic microscopies allow for high-resolution magnetic imaging down to tens of nanometers. However, the samples need to be prepared on transparent membranes which are very fragile and difficult to manipulate. We present processes for the fabrication of samples with magnetic micro- and nanostructures with spin configurations forming magnetic vortices suitable for Lorentz transmission electron microscopy and magnetic transmission x-ray microscopy studies. The samples are prepared on silicon nitride membranes and the fabrication consists of a spin coating, UV and electron-beam lithography, the chemical development of the resist, and the evaporation of the magnetic material followed by a lift-off process forming the final magnetic structures. The samples for the Lorentz transmission electron microscopy consist of magnetic nanodiscs prepared in a single lithography step. The samples for the magnetic x-ray transmission microscopy are used for time-resolved magnetization dynamic experiments, and magnetic nanodiscs are placed on a waveguide which is used for the generation of repeatable magnetic field pulses by passing an electric current through the waveguide. The waveguide is created in an extra lithography step.

A protocol for the fabrication of magnetic micro- and nanostructures with spin configurations forming magnetic vortices suitable for transmission electron microscopy (TEM) and magnetic transmission x-ray microscopy (MTXM) studies is presented.

用透射显微技术制备氮化硅薄膜磁性纳米结构的研究

Electron and x-ray magnetic microscopies allow for high-resolution magnetic imaging down to tens of nanometers. However, the samples need to be prepared ...