This research was financially supported by Ministry of Science and Technology, Taiwan (104-2514-S-009 -001, 104-2627-M-009-001 and 102-2311-B-009-004-MY3). We thank the National Nano Device Laboratories (NDL) for its valuable assistance during device fabrication and analysis.

1. Fabrikasyon ve pSNWFET Cihazlarının Koruma <ol><li> cihaz İmalatı Not: pSNWFET önce 23,24 bildirilen bir yan boşluk tekniği kullanılarak imal edilmiştir. <ol><li> kapı dielektrik katman hazırlayın. <ol><li> 100 nm kalınlığında termal oksit (SiO 2) (4 saat 980 ° C&#39;de O 2 ve H 2 işlem gazı) ıslak oksidasyon süreci 25 kullanarak bir Si substrat üzerinde katman kap. </li><li> 4 saat 980 ° C &#39;de düşük basınçta kimyasal buhar biriktirme (LPCVD) 25 ile 50 nm-kalınlıkta bir nitrür (si 3N 4) tabaka bırakın. </li></ol></li><li> 4 saat 780 ° C&#39;de LPCVD 25 kullanılarak 100 nm kalınlığında Tetraetil Ortosilikat (TEOS) katmanı bırakın. </li><li> oksit kukla yapılarını tanımlamak için bir I-line step kullanılarak standart litografi gerçekleştirin. <ol><li> Coat bir 830-nm kalınlığında paslanmaz çeliğin tabakası ile stürktürlerin. </li><li> benI-line step bir desen tanımlanmış photomask nsert. </li><li> Oda sıcaklığında 1980 J bir güçte: I-line step (365 nm dalga boyu) kullanarak pozlamayı işleyin. </li><li> 5 dakika boyunca bir geliştirici içinde gofret geliştirin. </li><li> Indüktif 1 dakika için HBr ve Cl plazma gazı ile plazma 25 etcher bağlanmış bir standart kullanarak izotropik aşındırma işlemi gerçekleştirin. </li></ol></li><li> LPCVD 25 kullanılarak 100 nm kalınlığında amorf silisyum (α-Si) katmanı bırakın. </li><li> Polikristal yapıya α-Si dönüştürmek için 24 saat boyunca N2 ortam içinde 600 ° C de bir tavlama aşaması gerçekleştirin. </li><li> Düşük enerjide kaynak / drenaj (S / D) doping ile implant fosfor iyonları (5E 15 cm -2) 25. </li><li> Poli-Si tabakayı kaldırmak ve polisilikon nanotel (pSNW) 25 oluşturmak için I-line step kullanılarak standart litografi gerçekleştirin. Not: dop implant adımı 1.1.3 tekrarlayınpoli-Si çıkarılması ve self-hizalanmış bir biçimde yan Si kanalları oluşturacak S / D bölgelerden daha başka yerlerde karıncalar. </li><li> 5 saat 25 780 ° C&#39;de LPCVD kullanarak pasivasyon işlemi (200 nm kalınlığında TEOS oksit tabakası) gerçekleştirin. </li><li> İki aşamalı kuru / ıslak aşındırma işlemini kullanarak nanotel kanalları ve form testi pedleri maruz I-line step kullanılarak standart litografi gerçekleştirin. <ol><li> Adımı tekrarlayın 1.1.3. </li><li> Islak aşındırma işlemi gerçekleştirin (DHF: HF / 1 dakika süre ile H 2 O). </li></ol></li></ol></li><li> Gofret koruma <ol><li> Bir vakum saklama torbasında gofret Seal ve elektronik kuru kabine (bağıl nem &lt;oda sıcaklığında% 40) saklayın. </li></ol></li></ol> Cihazın 2. Tedavi öncesi <ol><li> cihaz temizliği <ol><li> Saf aseton ile cihazı durulayın. </li><li> Sonikasyon (46 kHz, 80 B), 10 dakika boyunca, saf aseton cihazı. </li> &lt;li&gt; sonikasyon (46 kHz, 80 W) 5 dakika boyunca saf etanol (% 99.5) cihaz. </li><li> Üfleme kuru azot Cihazın yüzeyi. </li></ol></li><li> oksijen plazma <ol><li> 30 saniye için 18 W O 2 plazma ile cihazı davranın. </li></ol></li></ol> Cihaz Yüzey DNA Probe 3. İmmobilizasyonu <ol><li> Amin grubu modifikasyonu <ol><li> % 2.0 (3-aminopropil) trietoksisilan (APTES), 30 dakika boyunca / etanol çözeltisi içinde cihazı bırakın. </li><li> Etanol ile üç kez yıkanır cihazı ve daha sonra sonikasyon (46 kHz, 80 B), 10 dakika boyunca etanol içindeki bir cihaz. </li><li> 10 dakika SNWs ilgili amin grupları oluşturmak için 120 ° C&#39;de bir sıcak plaka üzerinde cihazı ısıtın. </li></ol></li><li> Aldehid grubu modifikasyonu <ol><li> yüzeye aldehid grupları oluşturmak için oda sıcaklığında 1 saat süre ile% 12.5 glutaraldehid cihazı bırakın. Işık maruz kalmaktan kaçının. </li><li> Cihaz zekâ yıkayınH, 10 mM sodyum fosfat tampon maddesi (Na-PB pH 7.0) ve daha sonra, ve-darbe kuru azot ile cihazın yüzeyi. </li></ol></li><li> DNA probu immobilizasyon <ol><li> gece boyunca 1 uM, DNA probları içeren bir çözelti içinde cihazı bırakın. </li><li> 30 dakika reaksiyona girmemiş aldehid grupları bloke etmek için 4.0 mM NaBH3 CN ile, 10 mM Tris tampon maddesi (pH 8.0) &#39;de cihaz bırakın. </li><li> Na-PB (pH 7.0) ile üç kez cihaz yıkanır ve daha sonra azot ile cihazın yüzeyi fön. </li></ol></li></ol> pSNWFET Yüzey Modifikasyon 4. Onay ve Analizi <ol><li> Yüzey modifikasyonu, her adımda takip pH profili <ol><li> pH 3,0-9,0 10 mM Na--PB hazırlayın. <ol><li> Iyonu giderilmiş su içinde (Na 3 PO4) (pH 11.60) dodekahidrat tribazik, 10 mM sodyum fosfat hazırlayın. </li><li> Iyonu giderilmiş su içinde 10 mM fosforik asit hazırlanması (H3 PO 4)(PH 2.35). </li><li> 3.0 pH değerlerinde, 4.0, 5.0 ile tampon elde etmek için, pH değerinin ölçümü sırasında, 6.0, 10 mM Na 3 PO 4 tampon 500 ml pH elektrodu yerleştirin ve 10 mM H3 PO 4 tampon farklı hacimlerde bu çözelti karışımı , 7.0, 8.0 ve 9.0 arasındadır. </li></ol></li><li> AC iletkenlik ölçümü Not: Ölçüm devresi küçük bir AC sinyal jeneratörü ve sıvı geçit elektrodu olarak sunulan bir Au Mikro dahil. <ol><li> Her değişiklik adımında ölçümü 26 için en uygun sıvı kapı gerilimi (V LG) belirlemek (2.2, 3.1, 3.2, ve 3.3 adımlar). Not: Cihazın elektrik özellikleri, bu bölümde tarif edildiği gibi SNW dört yüzey değişiklikleri ölçüldü sonra. Aşama 2.2&#39;de doğal oksit tabakası içeren modifiye edilmemiş pSNWFET değiştirilmiş; APTES amino grubu ile cihaz modifiye 3.1 gerektirir aşama; adım 3.2 yüksüz ile değişiklik gerektirirGlutaraldehid fonksiyonel grup; ve adım 3.3 DNA probu değişiklik içerir. <ol><li> SNW ile doğrudan temas için: 10 mM Na-PB (pH 7.0), bir şırınga pompası kullanılarak SNW yüzeyine bir çözüm sunmak (5.0 mL / saat akış oranı). </li><li> 0.80 den 1.30 V V LG süpürme sırasında cihazın gerçek zamanlı iletkenliği ölçmek <ol><li> Oda sıcaklığında kilit tekniği 27 kullanılarak iletkenlik ölçümü yapın. </li><li> düşük gürültü akımı preamplifikatör kullanarak bir AC gerilim sinyali AC akım sinyalleri dönüştürmek. </li><li> 1.30 V (aralık = 0.02 V) 0.80 V LG artan üzerine iletkenlik (G) hakkında veri toplamak. </li></ol></li><li> Cihazın 26 optimal V LG (en hassas V LG) belirleyin. <ol><li> Eğrinin denklemini elde etmek için adım 4.1.2.1.2.3 gelen GV LG eğrileri çizilir. </li><li> Difdenklemini farklılaştıran ve V LG her noktasında değerlerini hesaplamak. </li><li> G adım 4.1.2.1.3.2 değeri bölün ve maksimum numarasına göre optimum V LG belirler. </li></ol></li></ol></li><li> Yüzey modifikasyon her adımında pH profili gerçek zamanlı iletkenlik ölçümü. <ol><li> Oda sıcaklığında kilit tekniği 27 kullanılarak iletkenlik ölçümü yapın. </li><li> düşük gürültü akımı preamplifikatör kullanarak AC gerilim sinyalleri içine AC akım sinyalini dönüştürmek. </li><li> Yüzey modifikasyonu (adım 2.2 her adımı için optimal V LG ayarlayın: V LG = 1.02, 3.1 adım: V LG = 0.98, adım 3.2: V LG = 0.98, ve adım 3.3: V LG = 1.0). </li><li> 5.0 ml / sa: 3.0 ila SNW yüzeyine 9.0 (akış hızı pH değerleri ile, 10 mM Na-PB çözeltisi sunmak) Ve 0.01 V&#39;luk bir boşaltma geriliminde iletkenlik verileri toplar </li></ol></li></ol></li></ol></li><li> Yüzey modifikasyonu, her adımda takip eden 10 mM Na--PB (pH 7.0), cihazın elektrik özellikleri (I D -V BG eğrisi) ölçümü (adım 2.2, 3.1, 3.2 ve 3.3.) Not: Cihazın elektrik özelliklerini SNW dört yüzey değişikliklerden sonra ölçüldü: Adım 2.2, yerli oksit tabakası içeren değiştirilmemiş pSNWFET değiştirilmiş; adım 3.1 APTES amin grubu ile cihazı değiştirme içerir; adım 3.2 glutaraldehit yüksüz fonksiyonel grup ile değişiklik gerektirir; ve adım 3.3 DNA probu değişikliği gerektirir. <ol><li> SNW ile doğrudan temas için: bir şırınga pompası kullanılarak (5.0 ml / saat debi) (2.2, 3.1, 3.2, ve 3.3 adımlar), 10 mM Na-PB (pH 7.0) SNW yüzeyine çözüm sunun. </li><li> Ben D ölçün </em&gt; Cihazın bir ticari yarıiletken analizörü ve yazılımı kullanarak (2.2, 3.1, 3.2, ve 3.3 adımlar). <ol><li> &quot;NMOSFET&quot; modunu seçin. </li><li> Modülleri - &quot;V BG Ben D&quot; seçeneğini seçin. Not: D drenaj / kaynak akımı ve V BG arka kapı gerilimdir. </li><li> 3,0 V -1 potansiyel kapısı (V BG) süpürme sırasında sabit bir önyargı gerilimi (V D = 0,5 V) Set (aralık = 0,2 V). </li><li> V BG eğrileri - I D elde etmek için Çalıştır simgesini tıklatın. </li></ol></li></ol></li></ol> 5. DNA Biyoalgılayıcı Not: Tipik bir deneyde, bu D - V, B, eğri G başka varyasyonu Obse olduğundan emin olmak için üç kez belirlenmektedirSVEd. <ol><li> Taban belirlenmesi <ol><li> Bir şırınga pompası kullanılarak 10 dakika için bir DNA probu immobilize SNW yüzeyine, 10 mM Na-PB çözeltisi (pH 7.0) teslim (akış hızı: 5.0 ml / saat) ve daha sonra 30 dakika boyunca SNW inkübe edin. </li><li> Cihazın (adımı tekrarlayın 4.2.2) I D ölçün. </li></ol></li><li> DNA algılama / DNA hibridizasyonu <ol><li> Bir şırınga pompası kullanılarak 10 dakika için bir DNA probu immobilize SNW yüzeyi üzerine yüklenebilir 22:00 tamamlayıcı hedef DNA (akış hızı: 5.0 ml / saat) ve daha sonra 30 dakika boyunca SNW inkübe edin. </li><li> Bağlanmamış hedef DNA yıkamak için: bir şırınga pompası kullanılarak 10 dakika boyunca SNW yüzeyi üzerine, 10 mM Na-PB çözeltisi (pH 7.0) teslim (5.0 mi / saat akış oranı). </li><li> Cihazın ben D ölçmek için adımı yineleyin 4.2.2. </li></ol></li><li> DNA / DNA hibridizasyon sinyali teyit. <ol><li> t üzerine yük 1 nM kurtarma DNA, DNA, bir şırınga pompası kullanılarak 10 dakika boyunca SNW yüzey probu immobilize (akış hızı: 5.0 ml / saat) ve daha sonra 30 dakika boyunca SNW inkübe edin. </li><li> Bir şırınga pompası kullanılarak 10 dakika boyunca SNW yüzeyi üzerine, 10 mM Na-PB çözeltisi (pH 7.0) teslim (: 5.0 ml / saat akış oranı). </li><li> Cihazın ben D ölçmek için adımı yineleyin 4.2.2. </li></ol></li><li> Negatif kontrol <ol><li> Bir şırınga pompası kullanılarak 10 dakika için bir DNA probu immobilize SNW yüzeyi üzerine yüklenebilir 100 pM olmayan tamamlayıcı DNA (akış hızı: 5.0 ml / saat) ve daha sonra 30 dakika boyunca SNW inkübe edin. </li><li> Bir şırınga pompası kullanılarak 10 dakika boyunca SNW yüzeyi üzerine, 10 mM Na-PB çözeltisi (pH 7.0) teslim (: 5.0 ml / saat akış oranı). </li><li> Cihazın ben D ölçmek için adımı yineleyin 4.2.2. </li></ol></li></ol>

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W. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Fabrication+and+characterization+of+nanowire+transistors+with+solid-phase+crystallized+poly-Si+channels.">Fabrication and characterization of nanowire transistors with solid-phase crystallized poly-Si channels.</a> Ieee T Electron Dev. 53, 2471-2477 (2006).</li><li>Doering, R., Nishi, Y. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=.">.</a> Handbook of semiconductor manufacturing technology. , (2008).</li><li>Lu, M. P., Hsiao, C. Y., Lai, W. T., Yang, Y. S. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Probing+the+sensitivity+of+nanowire-based+biosensors+using+liquid-gating.">Probing the sensitivity of nanowire-based biosensors using liquid-gating.</a> Nanotechnology. 21 (425505), (2010).</li><li>Gaspar, J., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Digital+lock+in+amplifier:+study,+design+and+development+with+a+digital+signal+processor.">Digital lock in amplifier: study, design and development with a digital signal processor.</a> Microprocess Microsy. 28, 157-162 (2004).</li><li>Vezenov, D. V., Noy, A., Rozsnyai, L. F., Lieber, C. M. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Force+titrations+and+ionization+state+sensitive+imaging+of+functional+groups+in+aqueous+solutions+by+chemical+force+microscopy.">Force titrations and ionization state sensitive imaging of functional groups in aqueous solutions by chemical force microscopy.</a> J Am Chem Soc. 119, 2006-2015 (1997).</li><li>Townsend, M. B., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Experimental+evaluation+of+the+FluChip+diagnostic+microarray+for+influenza+virus+surveillance.">Experimental evaluation of the FluChip diagnostic microarray for influenza virus surveillance.</a> J Clin Microbiol. 44, 2863-2871 (2006).</li><li>Wang, L. C., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Simultaneous+detection+and+differentiation+of+Newcastle+disease+and+avian+influenza+viruses+using+oligonucleotide+microarrays.">Simultaneous detection and differentiation of Newcastle disease and avian influenza viruses using oligonucleotide microarrays.</a> Vet Microbiol. 127, 217-226 (2008).</li><li>Lin, C. -. H., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Recovery+Based+Nanowire+Field-Effect+Transistor+Detection+of+Pathogenic+Avian+Influenza+DNA.">Recovery Based Nanowire Field-Effect Transistor Detection of Pathogenic Avian Influenza DNA.</a> Jpn J Appl Phys. 51 (02BL02), (2012).</li><li>Lee, K. N., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Well+controlled+assembly+of+silicon+nanowires+by+nanowire+transfer+method.">Well controlled assembly of silicon nanowires by nanowire transfer method.</a> Nanotechnology. 18 (445302), (2007).</li><li>Li, Z., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Sequence-specific+label-free+DNA+sensors+based+on+silicon+nanowires.">Sequence-specific label-free DNA sensors based on silicon nanowires.</a> Nano Lett. 4, 245-247 (2004).</li><li>McAlpine, M. C., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=High-performance+nanowire+electronics+and+photonics+on+glass+and+plastic+substrates.">High-performance nanowire electronics and photonics on glass and plastic substrates.</a> Nano Lett. 3, 1531-1535 (2003).</li><li>Cui, Y., Wei, Q., Park, H., Lieber, C. M. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Nanowire+nanosensors+for+highly+sensitive+and+selective+detection+of+biological+and+chemical+species.">Nanowire nanosensors for highly sensitive and selective detection of biological and chemical species.</a> Science. 293, 1289-1292 (2001).</li><li>Patolsky, F., Zheng, G., Lieber, C. M. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Nanowire-based+biosensors.">Nanowire-based biosensors.</a> Anal Chem. 78, 4260-4269 (2006).</li><li>Hsiao, C. Y., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Novel+poly-silicon+nanowire+field+effect+transistor+for+biosensing+application.">Novel poly-silicon nanowire field effect transistor for biosensing application.</a> Biosens Bioelectron. 24, 1223-1229 (2009).</li></ol>

The authors have nothing to disclose.

Yukarıdan aşağıya ticarileştirme ve aşağıdan yukarı fabrikasyon sSNWFETs için nedeniyle maliyeti 32,33, SNW konum kontrolü 34,35 ve düşük üretim ölçeği 36 zor kabul edilir yaklaşır. Buna karşılık, pSNWFETs imalatı basit ve düşük maliyetli 37&#39;dir. Yanak boşluk oluşumu tekniği (Şekil 1) ile yukarıdan aşağıya bir yaklaşım ve kombinasyonu ile, SNW boyutu reaktif plazma aşındırma süresini ayarlayarak kontrol edilebilir. ...

Silikon nanotel alan etkili transistörler (SNWFETs) ultra yüksek hassasiyet avantajlarını ve çevresel yük değişimine doğrudan elektrik tepkiler var. negatif (ya da pozitif) yüklü molekülün silikon nanotel (SNW) yaklaşımları, örneğin n-tipi SNWFETs olarak, SNW alt taşıyıcı tükenmiş (veya biriken) vardır. Sonuç olarak, SNWFET iletkenliği azalır (veya artar) 1. Bu nedenle, SNWFET cihazının SNW yüzeyine yakın bir şarj molekülü tespit edilebilir. hücre yüzeyi üzerinde enzimler, proteinler, nükleotitleri, ve çok sayıda moleküller de dahil olmak üzere Kişisel biyomoleküllerin yük taşıyıcıları ve SNWFETs kullanılarak izlenebilir. Özellikle SNW bir biyomoleküler prob hareketsiz uygun bir modifikasyon ile bir SNWFET etiket içermeyen biyosensör olarak geliştirilebilir. biyomarkerlar kullanılarak Gözetim hastalıklarının tanısı için önemlidir. Tablo 1 &#39;de gösterildiği gibi, bir çok çalışma NWFE kullandık3 bağlanma tek virüsü 2, adenozin trifosfat ve kinaz dahil olmak üzere T tabanlı etiketi içermeyen, ultra-yüksek-duyarlılığı biyosensörler ve çeşitli biyolojik hedefleri gerçek zamanlı saptama, nöronal sinyaller 4, metal iyonları, 5,6, bakteriyel toksinler 7, dopamin 8, DNA 9-11 RNA 12,13, enzim ve kanser biyolojik 14-19, insan hormonlar 20, ve sitokinler 21,22. Bu çalışmalar, NWFET biyosensörler çözeltisi içinde, biyolojik ve kimyasal türlerin geniş bir yelpazesi için güçlü bir algılama platformu temsil olduğunu göstermiştir. SNWFET bazlı biyosensör, cihazın SNW yüzeyi üzerinde hareketsiz prob belirli biotarget tanır. Bir bioprobe immobilize genellikle bir dizi adımı içerir ve her adımda düzgün biyosensör düzgün işleyişini sağlamak için yapılır önemlidir. Çeşitli teknikler s analizi için geliştirilmiştirX-ışını fotoelektron spektroskopisi (XPS), Elipsometri, temas açısı ölçümü, atomik kuvvet mikroskobu (AFM) ve taramalı elektron mikroskobu (SEM) de dahil olmak üzere, sert bir terkip. Böyle XPS, Elipsometri ve temas açısı ölçümü gibi yöntemler diğer benzer malzemeler üzerinde yapılan paralel deneyler bağımlı iken böyle AFM ve SEM gibi yöntemler, nanotel cihazda bioprobe immobilizasyon doğrudan kanıtlar sunmaktadır. Bu yazıda, iki bağımsız yöntemler kullanarak her değişiklik adımında onay açıklar. XPS polisilikon gofret belirli atomların konsantrasyonlarını incelemek için kullanılır, ve cihazın elektrik özelliklerinde değişimler doğrudan SNW yüzeyinde yük değişimini onaylamak için ölçülür. Biz bu protokolü göstermek için bir örnek olarak polikristal SNWFETs (pSNWFETs) kullanarak DNA biyoalgı kullanır. SNW yüzeyinde bir DNA probunun hareketsiz hale üç adımdan oluşur: SNW, al yerli hidroksil yüzeyinde amin grubu değişikliğifeniltiyoasetaldehit grup modifikasyonu ve 5&#39;-aminomodified DNA prob immobilizasyon. Yüzey ücretleri kanal akımı ve iletkenlik 1 alter kapısı dielektrik üzerinde yerel arayüz potansiyel değişikliklere neden çünkü her değişiklik adımında, cihaz doğrudan SNW yüzeyinde hareketsiz fonksiyonel grubun sorumlu değişimini algılayabilir. elektriksel pSNWFET cihazın elektrik özelliklerini modüle SNW yüzeyini çevreleyen Masraflar; Bu nedenle, SNW yüzey özellikleri pSNWFET cihazları elektriksel özelliklerinin belirlenmesinde önemli bir rol oynar. rapor edilen prosedürlere olarak, SNW yüzeyi üzerinde bir bioprobe immobilizasyonu ile doğrudan tespit edilebilir ve elektrikli ölçüm yoluyla teyit ve cihaz biyo-algılayıcı uygulamaları için hazırlanır.

<table><tbody><tr><td>Acetone</td><td>ECHO</td><td>AH-3102</td><td></td></tr><tr><td>(3-Amonopropyl)triethoxysilane (APTES), &amp;ge;98%</td><td>Sigma-Aldrich</td><td>A3648</td><td>Danger</td></tr><tr><td>Ethanol, anhydrous, 99.5%</td><td>ECHO</td><td>484000203108A-72EC</td><td></td></tr><tr><td>Glutaraldehyde solution (GA), 50%</td><td>Sigma-Aldrich</td><td>G7651</td><td>Avoid light</td></tr><tr><td>Sodium cyanoborohydride, &amp;ge;95.0%&amp;nbsp;</td><td>Fluka</td><td>71435</td><td>Danger and deliquescent</td></tr><tr><td>Sodium phosphate tribasic dodecahydrate, &amp;ge;98%</td><td>Sigma</td><td>04277</td><td></td></tr><tr><td>Phosphoric acid, &amp;ge;99.0%</td><td>Fluka</td><td>79622</td><td>Deliquescent</td></tr><tr><td>Photoresist (iP3650)</td><td>Tokyo Ohka Kogyo Co., LTD</td><td>THMR-iP3650 HP</td><td></td></tr><tr><td>Synthetic oligonucleotides, HPLC purified</td><td>Protech Technology</td><td></td><td></td></tr><tr><td>Tris(hydroxymethyl)aminomethane (Tris), &amp;ge;99.8%</td><td>USB</td><td>75825</td><td></td></tr><tr><td>Keithley 2636 System SourceMeter</td><td>Keithley</td><td></td><td></td></tr><tr><td>SR830 DSP Lock-In Amplifier</td><td>Stanford Research Systems</td><td></td><td></td></tr><tr><td>SR570 Low-noise Current Preamplifier</td><td>Stanford Research Systems</td><td></td><td></td></tr><tr><td>Ni PXI Express</td><td>National Instruments</td><td></td><td></td></tr></tbody></table>

preparation of silicon nanowire field-effect transistor for chemical and biosensing applications

Surveillance using biomarkers is critical for the early detection, rapid intervention, and reduction in the incidence of diseases. In this study, we describe the preparation of polycrystalline silicon nanowire field-effect transistors (pSNWFETs) that serve as biosensing devices for biomarker detection. A protocol for chemical and biomolecular sensing by using pSNWFETs is presented. The pSNWFET device was demonstrated to be a promising transducer for real-time, label-free, and ultra-high-sensitivity biosensing applications. The source/drain channel conductivity of a pSNWFET is sensitive to changes in the environment around its silicon nanowire (SNW) surface. Thus, by immobilizing probes on the SNW surface, the pSNWFET can be used to detect various biotargets ranging from small molecules (dopamine) to macromolecules (DNA and proteins). Immobilizing a bioprobe on the SNW surface, which is a multistep procedure, is vital for determining the specificity of the biosensor. It is essential that every step of the immobilization procedure is correctly performed. We verified surface modifications by directly observing the shift in the electric properties of the pSNWFET following each modification step. Additionally, X-ray photoelectron spectroscopy was used to examine the surface composition following each modification. Finally, we demonstrated DNA sensing on the pSNWFET. This protocol provides step-by-step procedures for verifying bioprobe immobilization and subsequent DNA biosensing application.

Çeşitli SNWFETs biyosensörler (Tablo 1) transdüser olarak hizmet etmek için rapor edilmiştir. Tek kristalli SNWFETs (sSNWFETs) ve pSNWFETs sulu çözeltiler içinde dönüştürücü gibi karşılaştırılabilir elektrik özellikler gösterirler ve her iki birçok biyo-algılayıcı uygulamaları için rapor edilmiştir. Bu çalışmada kullanılan pSNWFET cihazının avantajlı bir özelliği, basit ve düşük maliyetli bir imalat işlemidir. Şekil 1a</...

Watch this Scientific Journal Video about Preparation of Silicon Nanowire Field-effect Transistor for Chemical and Biosensing Applications at JoVE.com

Preparation of Silicon Nanowire Field-effect Transistor for Chemical and Biosensing Applications

We describe key steps for biosensing by using polysilicon nanowire field-effect transistors, including the preparation of the device and the immobilization and confirmation of a DNA molecular probe on the nanowire surface, as well as conditions for DNA sensing.

Kimya ve Biyoalgılayıcı Uygulamaları için Silikon Nanotel Alan etkili Transistör hazırlanması

Surveillance using biomarkers is critical for the early detection, rapid intervention, and reduction in the incidence of diseases. In this study, we ...

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11.0K Görüntüleme.  National Chiao Tung University. We describe key steps for biosensing by using polysilicon nanowire field-effect transistors, including the preparation of the device and the immobilization and confirmation of a DNA molecular probe on the nanowire surface, as well as conditions for DNA sensing.

Video: Preparation of Silicon Nanowire Field-effect Transistor for Chemical and Biosensing Applications

Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds

Monolayer Contact Doping (MLCD) is a simple method for doping of surfaces and nanostructures1. MLCD results in the formation of highly controlled, ultra shallow and sharp doping profiles at the nanometer scale. In MLCD process the dopant source is a monolayer containing dopant atoms.
In this article a detailed procedure for surface doping of silicon substrate as well as silicon nanowires is demonstrated. Phosphorus dopant source was formed using tetraethyl methylenediphosphonate monolayer on a silicon substrate. This monolayer containing substrate was brought to contact with a pristine intrinsic silicon target substrate and annealed while in contact. Sheet resistance of the target substrate was measured using 4 point probe. Intrinsic silicon nanowires were synthesized by chemical vapor deposition (CVD) process using a vapor-liquid-solid (VLS) mechanism; gold nanoparticles were used as catalyst for nanowire growth. The nanowires were suspended in ethanol by mild sonication. This suspension was used to dropcast the nanowires on silicon substrate with a silicon nitride dielectric top layer. These nanowires were doped with phosphorus in similar manner as used for the intrinsic silicon wafer. Standard photolithography process was used to fabricate metal electrodes for the formation of nanowire based field effect transistor (NW-FET). The electrical properties of a representative nanowire device were measured by a semiconductor device analyzer and a probe station.

A detailed procedure for surface doping of Silicon interfaces is provided. The ultra-shallow surface doping is demonstrated by using phosphorus containing monolayers and rapid annealing process. The method can be used for doping of macroscopic area surfaces as well as nanostructures.

Organofosfor Bileşikleri Kullanma Silikon Yüzeyler ve Nanotellerin monolayer İletişim Doping

Monolayer Contact Doping (MLCD) is a simple method for doping of surfaces and nanostructures1. MLCD results in the formation of highly controlled, ultra ...

Mühendislik

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

As mass-produced silicon transistors have reached the nano-scale, their behavior and performances are increasingly affected, and often deteriorated, by quantum mechanical effects such as tunneling through single dopants, scattering via interface defects, and discrete trap charge states. However, progress in silicon technology has shown that these phenomena can be harnessed and exploited for a new class of quantum-based electronics. Among others, multi-layer-gated silicon metal-oxide-semiconductor (MOS) technology can be used to control single charge or spin confined in electrostatically-defined quantum dots (QD). These QD-based devices are an excellent platform for quantum computing applications and, recently, it has been demonstrated that they can also be used as single-electron pumps, which are accurate sources of quantized current for metrological purposes. Here, we discuss in detail the fabrication protocol for silicon MOS QDs which is relevant to both quantum computing and quantum metrology applications. Moreover, we describe characterization methods to test the integrity of the devices after fabrication. Finally, we give a brief description of the measurement set-up used for charge pumping experiments and show representative results of electric current quantization.

The fabrication process and experimental characterization techniques relevant to single-electron pumps based on silicon metal-oxide-semiconductor quantum dots are discussed.

Tek elektron pompalayabilme için Silikon Metal-oksit-yarıiletken Kuantum Noktaları

As mass-produced silicon transistors have reached the nano-scale, their behavior and performances are increasingly affected, and often deteriorated, by ...

Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology

We demonstrate a method for the low temperature growth (350 &#176;C) of vertically-aligned carbon nanotubes (CNT) bundles on electrically conductive thin-films. Due to the low growth temperature, the process allows integration with modern low-&#954; dielectrics and some flexible substrates. The process is compatible with standard semiconductor fabrication, and a method for the fabrication of electrical 4-point probe test structures for vertical interconnect test structures is presented. Using scanning electron microscopy the morphology of the CNT bundles is investigated, which demonstrates vertical alignment of the CNT and can be used to tune the CNT growth time. With Raman spectroscopy the crystallinity of the CNT is investigated. It was found that the CNT have many defects, due to the low growth temperature. The electrical current-voltage measurements of the test vertical interconnects displays a linear response, indicating good ohmic contact was achieved between the CNT bundle and the top and bottom metal electrodes. The obtained resistivities of the CNT bundle are among the average values in the literature, while a record-low CNT growth temperature was used.

A method for the growth of low temperature vertically-aligned carbon nanotubes, and the subsequent fabrication of vertical interconnect electrical test structures using semiconductor fabrication is presented.

Yarıiletken Teknolojisi ile uyumlu Düşük Sıcaklık Karbon Nanotüp Dikey Bağlantıları Fabrikasyon

We demonstrate a method for the low temperature growth (350 &#176;C) of vertically-aligned carbon nanotubes (CNT) bundles on electrically conductive ...

Fabrication of Carbon Nanotube High-Frequency Nanoelectronic Biosensor for Sensing in High Ionic Strength Solutions

The unique electronic properties and high surface-to-volume ratios of single-walled carbon nanotubes (SWNT) and semiconductor nanowires (NW) 1-4 make them good candidates for high sensitivity biosensors. When a charged molecule binds to such a sensor surface, it alters the carrier density5 in the sensor, resulting in changes in its DC conductance. However, in an ionic solution a charged surface also attracts counter-ions from the solution, forming an electrical double layer (EDL). This EDL effectively screens off the charge, and in physiologically relevant conditions ~100 millimolar (mM), the characteristic charge screening length (Debye length) is less than a nanometer (nm). Thus, in high ionic strength solutions, charge based (DC) detection is fundamentally impeded6-8.
We overcome charge screening effects by detecting molecular dipoles rather than charges at high frequency, by operating carbon nanotube field effect transistors as high frequency mixers9-11. At high frequencies, the AC drive force can no longer overcome the solution drag and the ions in solution do not have sufficient time to form the EDL. Further, frequency mixing technique allows us to operate at frequencies high enough to overcome ionic screening, and yet detect the sensing signals at lower frequencies11-12. Also, the high transconductance of SWNT transistors provides an internal gain for the sensing signal, which obviates the need for external signal amplifier.
Here, we describe the protocol to (a) fabricate SWNT transistors, (b) functionalize biomolecules to the nanotube13, (c) design and stamp a poly-dimethylsiloxane (PDMS) micro-fluidic chamber14 onto the device, and (d) carry out high frequency sensing in different ionic strength solutions11.

We describe the device fabrication and measurement protocol for carbon nanotube based high frequency biosensors. The high frequency sensing technique mitigates the fundamental ionic (Debye) screening effect and allows nanotube biosensor to be operated in high ionic strength solutions where conventional electronic biosensors fail. Our technology provides a unique platform for point-of-care (POC) electronic biosensors operating in physiologically relevant conditions.

Yüksek İyonik Güç Çözümleri Algılama için karbon Nanotube Yüksek Frekans nanoelektronik Biyosensör Fabrikasyon

The unique electronic properties and high surface-to-volume ratios of single-walled carbon nanotubes (SWNT) and semiconductor nanowires (NW) 1-4 make them ...

Biyomühendislik

Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices

Flow-assisted dielectrophoresis (DEP) is an efficient self-assembly method for the controllable and reproducible positioning, alignment, and selection of nanowires. DEP is used for nanowire analysis, characterization, and for solution-based fabrication of semiconducting devices. The method works by applying an alternating electric field between metallic electrodes. The nanowire formulation is then dropped onto the electrodes which are on an inclined surface to create a flow of the formulation using gravity. The nanowires then align along the gradient of the electric field and in the direction of the liquid flow. The frequency of the field can be adjusted to select nanowires with superior conductivity and lower trap density. 
In this work, flow-assisted DEP is used to create nanowire field effect transistors. Flow-assisted DEP has several advantages: it allows selection of nanowire electrical properties; control of nanowire length; placement of nanowires in specific areas; control of orientation of nanowires; and control of nanowire density in the device. 
The technique can be expanded to many other applications such as gas sensors and microwave switches. The technique is efficient, quick, reproducible, and it uses a minimal amount of dilute solution making it ideal for the testing of novel nanomaterials. Wafer scale assembly of nanowire devices can also be achieved using this technique, allowing large numbers of samples for testing and large-area electronic applications.

In this paper, flow assisted dielectrophoresis is demonstrated for the self-assembly of nanowire devices. The fabrication of a silicon nanowire field effect transistor is shown as an example.

Akış yoluyla Dielectrophoresis: Yüksek performanslı çözüm processable Nanowire cihazları imalatı için düşük maliyetli bir yöntem

Flow-assisted dielectrophoresis (DEP) is an efficient self-assembly method for the controllable and reproducible positioning, alignment, and selection of ...

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

A method of carrier number control by electrolyte gating is demonstrated. We have obtained WS2 thin flakes with atomically flat surface via scotch tape method or individual WS2 nanotubes by dispersing the suspension of WS2 nanotubes. The selected samples have been fabricated into devices by the use of the electron beam lithography and electrolyte is put on the devices. We have characterized the electronic properties of the devices under applying the gate voltage. In the small gate voltage region, ions in the electrolyte are accumulated on the surface of the samples which leads to the large electric potential drop and resultant electrostatic carrier doping at the interface. Ambipolar transfer curve has been observed in this electrostatic doping region. When the gate voltage is further increased, we met another drastic increase of source-drain current which implies that ions are intercalated into layers of WS2 and electrochemical carrier doping is realized. In such electrochemical doping region, superconductivity has been observed. The focused technique provides a powerful strategy for achieving the electric-filed-induced quantum phase transition.

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Here, we present a protocol to control the carrier number in solids by using the electrolyte.

Elektrik alanı kontrol elektronik elektrolit çoğunluğuna tarafından WS2 Nanodevices durumlarda

A method of carrier number control by electrolyte gating is demonstrated. We have obtained WS2 thin flakes with atomically flat surface via scotch tape ...

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors

Flexible photodetectors have been intensely studied for the use of curved image sensors, which are a crucial component in bio-inspired imaging systems, but several challenging points remain, such as a low absorption efficiency due to a thin active layer and low flexibility. We present an advanced method to fabricate a flexible phototransistor array with an improved electrical performance. The outstanding electrical performance is driven by a low dark current owing to deep impurity doping. Stretchable and flexible metal interconnectors simultaneously offer electrical and mechanical stabilities in a highly deformed state. The protocol explicitly describes the fabrication process of the phototransistor using a thin silicon membrane. By measuring I-V characteristics of the completed device in deformed states, we demonstrate that this approach improves the mechanical and electrical stabilities of the phototransistor array. We expect that this approach to a flexible phototransistor can be widely used for the applications of not only next-generation imaging systems/optoelectronics but also wearable devices such as tactile/pressure/temperature sensors and health monitors.

We present a detailed method to fabricate a deformable lateral NIPIN phototransistor array for curved image sensors. The phototransistor array with an open mesh form, which is composed of thin silicon islands and stretchable metal interconnectors, provides flexibility and stretchability. The parameter analyzer characterizes the electrical property of the fabricated phototransistor.

Esnek görüntü sensörü imalatı Lateral NIPIN Phototransistors dayalı.

Flexible photodetectors have been intensely studied for the use of curved image sensors, which are a crucial component in bio-inspired imaging systems, ...

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Two-dimensional (2D) materials have attracted huge attention due to their unique properties and potential applications. Since wafer scale synthesis of 2D materials is still in nascent stages, scientists cannot fully rely on traditional semiconductor techniques for related research. Delicate processes from locating the materials to electrode definition need to be well controlled. In this article, a universal fabrication protocol required in manufacturing nanoscale electronics, such as 2D quasi-heterojunction bipolar transistors (Q-HBT), and 2D back-gated transistors are demonstrated. This protocol includes the determination of material position, electron beam lithography (EBL), metal electrode definition, et al. A step by step narrative of the fabrication procedures for these devices are also presented. Furthermore, results show that each of the fabricated devices has achieved high performance with high repeatability. This work reveals a comprehensive description of process flow for preparing 2D nano-electronics, enables the research groups to access this information, and pave the way toward future electronics.

The article aims to introduce a standard and reliable fabrication procedure for the development of future low dimensional nanoelectronics.

İki boyutlu nanoelektronik imal etmek standart ve güvenilir bir yöntem

Two-dimensional (2D) materials have attracted huge attention due to their unique properties and potential applications. Since wafer scale synthesis of 2D ...

Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection

In the current study, graphene and its derivatives have been investigated and used for many applications, including electronics, sensing, energy storage, and photocatalysis. Synthesis and fabrication of high quality, good uniformity, and low defects graphene are critical for high-performance and highly sensitive devices. Among many synthesis methods, chemical vapor deposition (CVD), considered a leading approach to manufacture graphene, can control the number of graphene layers and yield high-quality graphene. CVD graphene needs to be transferred from the metal substrates on which it is grown onto&#160;insulating substrates for practical applications. However, separation and transferring of graphene onto new substrates are challenging for a uniform layer without damaging or affecting graphene&#39;s structures and properties. Additionally, electrolyte-gated graphene field-effect transistor (EGGFET) has been demonstrated for its wide applications in various biomolecular detections because of its high sensitivity and standard device configuration. In this article, poly (methyl methacrylate) (PMMA)-assisted graphene transferring approach, fabrication of graphene field-effect transistor (GFET), and biomarker immunoglobulin G (IgG) detection are demonstrated. Raman spectroscopy and atomic force microscopy were applied to characterize the transferred graphene. The method is shown to be a practical approach for transferring clean and residue-free graphene while preserving the underlying graphene lattice onto an insulating substrate for electronics or biosensing applications.

The present protocol demonstrates the development of electrolyte-gated graphene field-effect transistor (EGGFET) biosensor and its application in biomarker immunoglobulin G (IgG) detection.

Biyobelirteç Tespiti için Elektrolit Kapılı Grafen Alan Etkili Transistörün Geliştirilmesi ve İşlevselleştirilmesi

In the current study, graphene and its derivatives have been investigated and used for many applications, including electronics, sensing, energy storage, ...

Focused Ion Beam Lithography to Etch Nano-architectures into Microelectrodes

With advances in electronics and fabrication technology, intracortical microelectrodes have undergone substantial improvements enabling the production of sophisticated microelectrodes with greater resolution and expanded capabilities. The progress in fabrication technology has supported the development of biomimetic electrodes, which aim to seamlessly integrate into the brain parenchyma, reduce the neuroinflammatory response observed after electrode insertion and improve the quality and longevity of electrophysiological recordings. Here we describe a protocol to employ a biomimetic approach recently classified as nano-architecture. The use of focused ion beam lithography (FIB) was utilized in this protocol to etch specific nano-architecture features into the surface of non-functional and functional single shank intracortical microelectrodes. Etching nano-architectures into the electrode surface indicated possible improvements of biocompatibility and functionality of the implanted device. One of the benefits of using FIB is the ability to etch on manufactured devices, as opposed to during the fabrication of the device, facilitating boundless possibilities to modify numerous medical devices post-manufacturing. The protocol presented herein can be optimized for various material types, nano-architecture features, and types of devices. Augmenting the surface of implanted medical devices can improve the device performance and integration into the tissue.

We have shown that the etching of nano-architecture into intracortical microelectrode devices may reduce the inflammatory response and has the potential to improve electrophysiological recordings. The methods described herein outline an approach to etch nano-architectures into the surface of non-functional and functional single shank silicon intracortical microelectrodes.

Etch Nano mimarilerine mikroelektrotlara odaklanmış iyon ışını Litografisi

With advances in electronics and fabrication technology, intracortical microelectrodes have undergone substantial improvements enabling the production of ...