This program has been supported by the Australian Government through the Australian Renewable Energy Agency (ARENA). Responsibility for the views, information or advice expressed herein is not accepted by the Australian Government.

1.实验装置<ol><li>找到一个合适的通风柜的测量技术，并删除任何无关的设备，以便能更好的空气流量，降低塞满。 不要在通风橱中使用比氢氟酸（HF） 以外的任何化学物质。 </li><li>使用电导率计通风柜内的抽头测试去离子（DI）水的质量。确保DI水具有至多0.055μS/厘米，在20℃的温度的电导。 </li><li>将少数载流子寿命测试仪到通风橱。将电缆连接到一台计算机，这是位于桌子上的通风柜之外。 </li><li>交换机上的计算机和寿命测试。打开计算机上的寿命测试文件，然后单击"测量"按钮，以确保电脑和寿命测试仪之间的正确沟通。在寿命测试仪的光源应闪烁如果电脑和测试仪已正确连接。 </LI&gt; <li>放置在通风柜内部的卤素灯。放置灯，使得它可以照亮寿命测试阶段，其中，样品将位于。 </li><li>卤素灯连接到应位于通风柜外部的电源。当卤素灯被打开，其强度应至少为0.02瓦/厘米2的寿命试验机的阶段。 </li></ol> 2.准备15％的HF溶液注:HF是一种危险化学品，必须小心使用。它会导致缓慢的，持续的，并暴露于身体造成严重损害。 HF不容易燃烧的皮肤像其它酸 - 而它吸收迅速进入皮肤并导致深起泡和损坏骨头。这意味着，骨头变脆，起泡作为氟发生反应的钙。高频还可以结合与游离钙被用于神经调节和渗透细胞的平衡，使游离钙在体内的结合可能是致命的，这是最重要的用户遵循实验室安全协议使用HF时，并确保他们知道HF急救箱和hexafluorine（或葡萄糖酸钙凝胶）的位置。 <ol><li>放置一个化学清洁的圆形塑料容器（H:55毫米，D:170毫米）放入通 ​​风柜（同实施1）部分。 容器必须有一个透明的塑料盖。请参阅如何化学清洗，使用前容器第6部分。 </li><li>清除周围的塑料容器中的区域，在通风橱使HF溶液可以在没有任何障碍物附近来制备。 </li><li>适用于所有个人防护装备（PPE）。 </li><li>注意:加入50 ml的HF与至100毫升DI水（H 2 O）在容器中。 </li><li>注意:添加20毫升盐酸（HCl）的容器和混合H 2 O的:HF:用塑料镊子HCl溶液。冲洗镊子仔细算账。 </li><li>注意:将盖子上的塑料容器，并允许soluti关于沉降1小时。在此期间，高频烟雾会凝结在盖子。 </li><li>适当标记的容器，并清楚地表明，它含有HF。 注:HF溶液将持续1-2个月，大量使用。因此就没有必要在每次的测量是被执行以更换溶液。 </li></ol> 3.标定寿命测试仪<ol><li>定位已知电阻率和电导中的至少6个硅晶片。理想情况下，电阻率范围应涵盖0.1〜100Ω厘米。 </li><li>在电脑上，打开寿命测试仪校准文件。输入表中的每一晶片的电阻率，然后单击"更新＃晶圆"。 </li><li>单击校准文件中的"获取数据"按钮，进入寿命试验机的详细信息。 </li><li>应用所有必要的个人防护装备。 </li><li>注意:将充满对生命周期测试阶段的HF溶液，将其放置在感应线圈（BLU塑料容器Ë圆形区域）。 </li><li>当系统提示来衡量计算机上的"空气电压"，单击"确定"按钮测量HF溶液的电压。在这种情况下，空气已被取代的HF溶液的电导。 </li><li>警告:小心地取出容器装满HF从舞台并将其放置在通风橱板凳上。小心地取下盖子。 </li><li>注意:当盖已被从容器中取出，浸泡在第一硅晶片到使用塑料镊子HF溶液。将盖子放回到容器上。 </li><li>注意:将塑料容器中放回寿命测试阶段，它通过感应线圈的位置。确保在硅晶片的中心在线圈（蓝色圆圈区域）。 </li><li>当系统提示来衡量计算机上的"采样电压"，再次单击"确定"按钮。从舞台中删除容器，并将其放在通风橱板凳上。 </li><li>注意:小心ř<html>用塑料镊子emove从HF溶液中的硅晶片和冲洗晶片专用清洗烧杯。做水龙头在通风橱下最后的冲洗。 </li><li>注意:将盖子放回容器，并且该容器定位放回寿命测试阶段。 </li><li>直到所有的样品进行了测量，重复步骤3.6到3.12。 </li><li>一旦所有的样品进行了测量，点击在校准文件中的&#39;适合数据"按钮。这将适合抛物线曲线所测量的数据，并提供校准系数A，B和C的特定于这个设置。 </li><li>在电脑上，打开寿命测试文件，然后单击"设置"选项卡上。输入新的校准系数A，B和C的HF设置。保存该文件以新的名称。 注:HF设置只需要校准每6个月。因此就没有必要在每次的测量是将要执行校准设置。 </li></ol>jove_title"&gt; 4，硅片的湿化学处理前的测量<ol><li>准备标准清洁1（SC 1）。 <ol><li>注意:在所分配的碱性通风柜，在2升玻璃烧杯中，添加185个ml的氢氧化铵（NH 4 OH）与1295毫升去离子水。 </li><li>注意:将烧杯上热板和热H 2 O的:NH 4 OH溶液至〜50℃的温度下进行。用表玻璃盖住烧杯。 </li><li>注意:一旦H 2 O的:NH 4 OH溶液达到的〜50℃的温度下，加185个毫升过氧化氢​​（H 2 O 2），并继续加热直到温度达到〜75℃。该H 2 O的:NH 4 OH:H 2 O 2溶液称为SC 1。 注:SC 1应每天到有效清洁硅晶片改变。 </li></ol></li><li>准备标准清洁2（SC 2）。 <ol><li>注意:在酸性分配的通风橱，添加185毫升HCl与一二九五毫升DI水在2升玻璃烧杯中。 </li><li>注意:将烧杯上热板和热H 2 O的:HCl溶液至〜50℃的温度下进行。用表玻璃盖住烧杯。 </li><li>注意:一旦H 2 O的:盐酸溶液达到的〜50℃的温度下，加185个毫升的 H 2 O 2，继续加热直到温度达到〜75℃。该H 2 O的:盐酸:H 2 O 2溶液被称为SC 2。 注:更改SC 2每日有效清洁硅晶片。 </li></ol></li><li>制备硅蚀刻溶液。 <ol><li>在所分配的碱性通风柜，添加1600毫升四甲基氢氧化铵（TMAH）的一种化学清洁 2升玻璃烧杯中。请参阅如何化学清洗，使用前烧杯中第6节。 </li><li>将烧杯到热板上并加热TMAH溶液至温度85〜6℃。用表玻璃盖住烧杯。 注意:TMAH溶液将不需要改变，直到它开始结晶， 即，1个月后。 </li></ol></li><li>进行湿化学处理。 <ol><li>装载样品到石英摇篮，并将其放置在实验室的公共HF溶液。的浓度不是关键的。 </li><li>经过约10秒一次的样品成为疏水性（拉干），请从HF溶液的摇篮和冲洗用3烧杯装满去离子水。 </li><li>运输晶片的摇篮通风柜，其中SC 1已经准备好。当SC 1已稳定在〜75℃，慢慢浸入晶片的摇篮到SC 1。 </li><li>清洁中的SC 1晶片10分钟。 </li><li> 10分钟后已经过去了，从SC 1中取出晶片的摇篮和使用三个2升的玻璃烧杯装满去离子水冲洗。用去离子水填充他们之前，这些玻璃烧杯化学清洗 。请参见第6如何化学清洗烧杯。 </li><li>清洗后，将样品插入了仅针对后的SC 1处理专用HF溶液。的浓度不是关键的。 </li><li>经过约10秒一次的样品成为疏水性（拉干），请从HF溶液的摇篮和冲洗用3烧杯装满去离子水。使用相同的烧杯中的步骤4.4.5。 </li><li>运输晶片的摇篮通风柜，其中SC 2已做好准备。当SC 2已稳定在〜75℃，慢慢浸入晶片的摇篮到SC 2。 </li><li>清洁中的SC 2晶片10分钟。 </li><li> 10分钟后已经过去了，从SC 2去除晶片的摇篮，并使用3烧杯装满去离子水冲洗。使用相同的烧杯中的步骤4.4.5。 注意:晶片的摇篮可被存储在漂洗烧杯装满去离子水直到第二天之一。 </li><li>清洗后，将样品到HF溶液了仅针对交专用SC 2处理。的浓度不是关键的。 </li><li>经过约10秒一次的样品成为疏水性（拉干），请从HF溶液的摇篮和冲洗用3烧杯装满去离子水。使用相同的烧杯中的步骤4.4.5。 </li><li>运送晶片的摇篮到通风柜，其中TMAH溶液已被制备。当TMAH溶液稳定在〜85°C，慢慢浸入晶片的摇篮到TMAH溶液。 </li><li>蚀刻在TMAH晶片5分钟。这将删除〜5微米的硅。 </li><li> 5分钟后已经过去了，从TMAH溶液去除晶圆的摇篮，并使用3烧杯装满去离子水冲洗。使用相同的烧杯中的步骤4.4.5。超过3冲洗可能需要为TMAH是相当"粘性"。 </li><li>运送晶片在去离子水中摇篮到通风柜其中实验已设置。见第1.1节。 </li><li>内STE后2小时测量制备的硅晶片p 4.4.16。 </li></ol></li></ol> 5.测量程序<ol><li>应用所有必要的个人防护装备。 </li><li>填充两个2升塑料烧杯去离子水，并将其放置在通风橱。这些将用于漂洗该硅样品后测量。 </li><li>将塑料镊子到一个空500毫升塑料烧杯和地点附近的漂洗烧杯通风柜内。这些镊子将用来处理该硅样品。 </li><li>在电脑上，打开寿命测试仪文件。确保文件包含高频测量设置正确的校准系数。见第3节。 </li><li>在寿命测试仪的文件，选择"过渡"模式。进入硅晶片的细节将被测量，例如，厚度，电阻率和掺杂剂类型。 </li><li>注意:将容器（盖子）充满HF到寿命测试的阶段，其中心在感应线圈（蓝色圆圈区域）。让解决方案满足于1分钟。 </li><li>在电脑上，点击的寿命测试文件中的&#39;零仪器的按钮。这将测量溶液的电压。 注意:随着时间的推移，该溶液电压将降低，因为该解决方案的组合物随时间的变化。不论此，HF溶液不显示在其钝化质量任何退化，这就是为什么该溶液可以在不被改变用于1-2个月。 </li><li>警告:小心地从生命周期测试阶段的容器，并把它放在通风橱板凳上。 </li><li>警告:小心地从容器中充满HF溶液去除盖子。如果有在盖一些凝聚，在使用抽头通风柜仔细漂洗在DI水中的盖子。 </li><li>注意:小心沉浸第一硅晶片到HF溶液。使用塑料钳，轻轻按下在硅晶片上向下，以确保它是坐在容器的底部。 </li><li>冲洗镊子S和把它们放回空500毫升塑料烧杯中。 </li><li>警告:小心地将盖子背面的容器上，然后放置在生命周期测试阶段的容器。确保在硅晶片定位在感应线圈（蓝色圆圈区域）。 </li><li>冲洗并擦干你的手套。 操作计算机前将其删除。 </li><li>如果荧光灯的通风橱上，它必须切断的测量是前进行。在测量过程中是必需的最低限度的光。 </li><li>接通卤素灯，并确保其通过在塑料容器的盖照射硅晶片。时间为1分钟（准确的时间不是关键的）。 </li><li>在光照期，请在计算机上的文件生命周期的"测量"按钮。一个小窗口贴上"以数据"将会出现。 </li><li>在"获取数据"窗口中，键入该文件的名称。在"采样平均的选10。 </li><li>当硅晶片已照射1分钟，关掉卤素灯并立即点击&#39;以数据"窗口"平均值"按钮。寿命测试仪将闪烁10次，平均寿命测量。 注意:一旦卤素灯关闭时，在硅晶片的钝化将开始降低，因此照射后立即测量，以达到最佳的结果是很重要的。 </li><li>当平均完成后，单击"获取数据"窗口中的"确定"按钮。 </li><li>如果其他的测量需要，重复步骤5.15-5.18。 </li><li>注意:一旦测量完成后，从生命周期测试阶段取出容器，并把它放在通风橱板凳上。 </li><li>警告:小心地从容器中充满HF溶液去除盖子。如果有在盖一些凝聚，在使用抽头仔细冲洗盖子在DI水在通风柜。 </li><li>警告:小心地从HF溶液用塑料镊子硅片和冲洗的专用清洗烧杯晶圆。做水龙头在通风橱下最后的冲洗。 </li><li>如果有更多的样品进行测量时，重复步骤5.10-5.23。 </li><li>一旦所有的样品进行了测量，确保了盖子被放置在容器上，并存储在通风柜HF溶液。确保容器妥善标注。 </li><li>冲洗所有烧杯和镊子，并将它们存储在实验室其分配的斑点。 </li><li>允许寿命测试者使用后仍留在通风柜1小时，然后从通风橱中取出。 </li></ol>烧杯和容器的6化学清洗<ol><li>在分配的碱性通风柜，准备SC 1解决方案中的部分4.1.1-4.1.4介绍。 </li><li>以化学清洁烧杯和容器，倒入SC 1溶液倒入烧杯/容器。在烧杯CAÑ​​只清洗一次。 </li><li>让溶液清洗烧杯/容器10分钟。如果烧杯/容器是塑料的，它不能被放置在热板上，因此，SC 1溶液将在干净冷却。这不会影响清洁过程。 </li><li> 10分钟后，倒入SC 1解决方案到另一烧杯/容器是否需要清洗也。否则让SC 1解凉的大烧杯中。一旦冷却，SC 1可浇下来用流动水下沉。 </li><li>冲洗SC 1清洗烧杯/容器的去离子水。 </li><li>在分配酸通风柜，准备SC 2溶液中的部分4.2.1-4.2.4介绍。 </li><li>倒入SC 2溶液倒入烧杯/容器从步骤6.5。允许溶液清洗烧杯/容器10分钟。 </li><li> 10分钟后，倒入SC 2溶液到另一烧杯/容器是否需要清洗也。否则让SC 2溶液酷在一个大烧杯中。一旦冷却，SC 2可浇下来牛逼他水槽用流动水。 </li><li>冲洗SC 2清洁烧杯/容器的去离子水。烧杯/容器现在化学清洗。 </li></ol>

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App. Phys. 117 (5), 055711 (2015).</li><li>Hallam, B., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Hydrogen+passivation+of+B-O+defects+in+Czochralski+silicon.">Hydrogen passivation of B-O defects in Czochralski silicon.</a> Energy Procedia. 38, 561-570 (2013).</li><li>Hallam, B., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Advanced+bulk+defect+passivation+for+silicon+solar+cells.">Advanced bulk defect passivation for silicon solar cells.</a> IEEE J. Photovoltaics. 4 (1), 88-95 (2014).</li><li>Hornyi, T. S., Pavelka, T., Ttt, P. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=In+situ+bulk+lifetime+measurement+on+silicon+with+a+chemically+passivated+surface.">In situ bulk lifetime measurement on silicon with a chemically passivated surface.</a> App. Surf. Sci. 63 (1-4), 306-311 (1993).</li><li>Meier, D. L., Page, M. R., Iwaniczko, E., Xu, Y., Wang, Q., Branz, H. M. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Determination+of+surface+recombination+velocities+for+thermal+oxide+and+amorphous+silicon+on+float+zone+silicon.">Determination of surface recombination velocities for thermal oxide and amorphous silicon on float zone silicon.</a> , (2007).</li><li>Chhabra, B., Bowden, S., Opila, R. L., Honsberg, C. B. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=High+effective+minority+carrier+lifetime+on+silicon+substrates+using+quinhydrone-methanol+passivation.">High effective minority carrier lifetime on silicon substrates using quinhydrone-methanol passivation.</a> App. Phys. Lett. 96 (6), 063502 (2010).</li><li>Chhabra, B., Weiland, C., Opila, R. L., Honsberg, C. B. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Surface+characterization+of+quinhydrone-methanol+and+iodine-methanol+passivated+silicon+substrates+using+X-ray+photoelectron+spectroscopy.">Surface characterization of quinhydrone-methanol and iodine-methanol passivated silicon substrates using X-ray photoelectron spectroscopy.</a> Phys. Stat. Sol. (a). 208 (1), 86-90 (2011).</li><li>Yablonovitch, E., Allara, D. L., Chang, C. C., Gmitter, T., Bright, T. B. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Unusually+low+surface+recombination+velocity+on+silicon+and+germanium+surfaces.">Unusually low surface recombination velocity on silicon and germanium surfaces.</a> Phys. Rev. Lett. 57 (2), 249-252 (1986).</li><li>Grant, N. E., McIntosh, K. R., Tan, J. T. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Evaluation+of+the+bulk+lifetime+of+silicon+wafers+by+immersion+in+hydrofluoric+acid+and+illumination.">Evaluation of the bulk lifetime of silicon wafers by immersion in hydrofluoric acid and illumination.</a> J. Solid State Sci. Technol. 1 (2), P55-P61 (2012).</li><li>Grant, N. E., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Light+enhanced+hydrofluoric+acid+passivation+for+evaluating+silicon+bulk+lifetimes.">Light enhanced hydrofluoric acid passivation for evaluating silicon bulk lifetimes.</a> 28.th. European Photovoltaic Solar Energy Conference. , 883-887 (2013).</li><li>Grant, N. E. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=.">.</a> Surface passivation and characterization of crystalline silicon by wet chemical treatments. , (2012).</li><li>Kern, W. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=The+evolution+of+silicon+wafer+cleaning+technology.">The evolution of silicon wafer cleaning technology.</a> J. Electrochem. Soc. 137 (6), 1887-1892 (1990).</li><li>Angermann, H., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Wet-chemical+passivation+of+atomically+flat+and+structured+silicon+substrates+for+solar+cell+application.">Wet-chemical passivation of atomically flat and structured silicon substrates for solar cell application.</a> App. Surf. Sci. 254 (12), 3615-3625 (2008).</li><li>Angermann, H., Henrion, W., Rseler, A., Rebien, M. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Wet-chemical+passivation+of+Si(111)-+and+Si(100)-substrates.">Wet-chemical passivation of Si(111)- and Si(100)-substrates.</a> Mat. Sci. Eng. B. 73 ((1-3)), 178-183 (2000).</li><li>Bertagna, V., Plougonven, C., Rouelle, F., Chemla, M. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=p-+and+n-type+silicon+electrochemical+properties+in+dilute+hydrofluoric+acid+solutions.">p- and n-type silicon electrochemical properties in dilute hydrofluoric acid solutions.</a> J. Electrochem. Soc. 143 (11), 3532-3538 (1996).</li><li>Bertagna, V., Erre, R., Rouelle, F., Chemla, M. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Ionic+components+dependence+of+the+charge+transfer+reactions+at+the+silicon/HF+solution+interface.">Ionic components dependence of the charge transfer reactions at the silicon/HF solution interface.</a> J. Solid State Electrochem. 4 (1), 42-51 (1999).</li><li>Kolasinski, K. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=The+mechanism+of+Si+etching+in+fluoride+solutions.">The mechanism of Si etching in fluoride solutions.</a> Phys. Chem. Chem. Phys. 5 (6), 1270-1278 (2003).</li><li>Trucks, G. W., Raghavachari, K., Higashi, G. S., Chabal, Y. J. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Mechanism+of+HF+etching+of+silicon+surfaces:+A+theoretical+understanding+of+hydrogen+passivation.">Mechanism of HF etching of silicon surfaces: A theoretical understanding of hydrogen passivation.</a> Phys. Rev. Lett. 65 (4), 504-507 (1990).</li><li>Zhang, X. G. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=.">.</a> Electrochemistry of silicon and its oxide. , (2001).</li></ol>

The authors have nothing to disclose.

成功地执行上述的体硅寿命测量技术是基于三个关键步骤，（ⅰ）化学清洗和蚀刻硅晶片，（ⅱ）浸没在15％的HF溶液和（iii）照明1分钟17， 18,19。如果没有这些措施，大部分一辈子不能有把握测量。 作为测量技术是在RT进行的，所述表面钝化质量是高度敏感的表面污染（金属，有机膜）。因此，为了有效地除去表面的污染物，将SC 1溶液时（H 2 O的:NH 4...

高寿命（&gt; 1毫秒）单晶硅正变得对高效率太阳能电池更重要。了解嵌入式杂质的复合特性一直是，而且仍然是一个重要的课题。其中最广泛使用的技术来检查生缺陷的重组活性的是由一个光电导方法1。通过这种技术，通常难以从体重组完全分开表面，从而使得难以检查生缺陷的复合特性。幸运的是，存在若干电介质膜，可以实现非常低的有效表面重组&lt;5厘米/秒的速度（S EFF），从而有效地抑制表面复合。这些是，氮化硅（SiN X:H）2，氧化铝（Al 2 O 3）3和非晶硅 （a -Si:H）4。沉积和一个nealing这些介电膜的温度（〜400℃）被认为是足够低不永久停用的生缺陷的重组活性。这方面的例子是铁-硼5和硼氧6的缺陷。然而，近来人们发现， 在正型的Czochralski（CZ）硅空位-氧空位和磷缺陷可在温度250-350℃的7,8-完全停用。同样，在浮区（FZ）P型硅的一个缺陷被发现禁用在约250℃9。因此，如等离子体增强化学气相沉积（PECVD），原子层沉积（ALD）的常规钝化技术可能不适合用于抑​​制表面复合审查成年散装缺陷。此外， 有 SiN x:H和的a-Si:H膜已经显示出通过氢化10,11停用体硅缺陷。因此，研究重组活动Ø<html> ˚F生缺陷，一个RT表面钝化技术将是理想的。湿化学表面钝化满足这一要求。 在20世纪90年代Horanyi 等人证明了在碘乙醇硅片浸没（IE）的解决方案，提供了一种装置，以钝化的硅晶片，实现小号 EFF &lt;10厘米/秒12。在2007 Meier等人表明，碘-甲醇（IM）的解决方案可以减少表面复合至7厘米/秒13，而在2009尔斯基等人证明，5厘米小号 EFF /秒，可通过浸渍硅片达到在氢醌-甲醇（QM）解决方案14,15。尽管被IE，IM和QM解决方案实现了优异的表面钝化，它们不提供足够的表面钝化（S EFF &lt;5厘米/秒），以测量高纯度硅晶片的体寿命。 NT"&gt;另一种方式浸入硅晶片在HF酸以达到表面钝化的高水平。使用HF钝化硅片的概念最早是由Yablonavitch 等人介绍，在1986年，谁表现的纪录低的S EFF 0.25±0.5厘米/秒16。虽然优异的表面钝化被次比对高电阻率的晶片，我们已经发现该技术是非重复的，从而增加了一个大的不确定性的寿命测量。因此，通过一致地实现，以限制不确定性非常低的S EFF（〜1厘米/秒），我们已经开发出一种新的HF的钝化技术，其包括三个关键步骤，（ⅰ）化学清洗和硅晶片的蚀刻，（ⅱ）浸没在15％的HF溶液和（iii）照明1分钟17,18，这个过程是既简单又有效的时间相比于传统的PECVD法和ALD沉积技术上面列出。

<table>
	<tbody>
		<tr>
			<td>Hydrofluoric acid (48%)</td>
			<td>Merck Millipore,&#160; &#160;http://www.merckmillipore.com/AU/en/product/Hydrofluoric-acid-48%25,MDA_CHEM-100334</td>
			<td>1003340500</td>
			<td>Harmful and toxic. Any supplier could be used provided the chemical is Analytical Reagent (AR) grade.</td>
		</tr>
		<tr>
			<td>Hydrochloric acid 32%, AR</td>
			<td>ACI Labscan, http://www.rcilabscan.com/modules/productview.php?product_id=1985</td>
			<td>107209</td>
			<td>Harmful and toxic. Any supplier could be used provided the chemical is Analytical Reagent (AR) grade.</td>
		</tr>
		<tr>
			<td>Ammonia (30%) Solution AR</td>
			<td>Chem-supply, https://www.chemsupply.com.au/aa005-500m</td>
			<td>AA005</td>
			<td>Harmful and toxic. Any supplier could be used provided the chemical is Analytical Reagent (AR) grade.</td>
		</tr>
		<tr>
			<td>Hydrogen Peroxide (30%)</td>
			<td>Merck Millipore, http://www.merckmillipore.com/AU/en/product/Hydrogen-peroxide-30%25,MDA_CHEM-107209</td>
			<td>1072092500</td>
			<td>Harmful and toxic. Any supplier could be used provided the chemical is Analytical Reagent (AR) grade.</td>
		</tr>
		<tr>
			<td>Tetramethylammonium hydroxide (25% in H2O)</td>
			<td>J.T Baker, https://us.vwr.com/store/catalog/product.jsp?product_id=4562992</td>
			<td>5879-03</td>
			<td>Harmful and toxic. Any supplier could be used provided the chemical is Analytical Reagent (AR) grade.</td>
		</tr>
		<tr>
			<td></td>
			<td></td>
			<td></td>
			<td></td>
		</tr>
		<tr>
			<td>640 mL round plastic container</td>
			<td>Sistema, http://sistemaplastics.com/products/klip-it-round/640ml-round</td>
			<td>N/A</td>
			<td>This is a good container for storing the 15% HF solution in.</td>
		</tr>
		<tr>
			<td>WCT-120 lifetime tester</td>
			<td>Sinton Instruments, http://www.sintoninstruments.com/Sinton-Instruments-WCT-120.html</td>
			<td>N/A</td>
			<td></td>
		</tr>
		<tr>
			<td>Dell workstation with Microsoft Office Pro, Data acquisition card and software including Sinton Software under existing license.</td>
			<td>Sinton Instruments, http://www.sintoninstruments.com</td>
			<td>N/A</td>
			<td></td>
		</tr>
		<tr>
			<td>Halogen optical lamp, ELH 300W, 120V</td>
			<td>OSRAM Sylvania, http://www.sylvania.com/en-us/products/halogen/Pages/default.aspx</td>
			<td>54776</td>
			<td>Any equivalent lamp could be used.</td>
		</tr>
		<tr>
			<td>Voltage power source</td>
			<td>Home made power supply</td>
			<td>N/A</td>
			<td>Any power supply could be used provided it can produce up to 90 Volts and 1-5 Amps.</td>
		</tr>
		<tr>
			<td>Conductivity meter</td>
			<td>WTW, http://www.wtw.de/uploads/media/US_L_07_Cond_038_049_I_02.pdf</td>
			<td>LF330</td>
			<td></td>
		</tr>
	</tbody>
</table>

light enhanced hydrofluoric acid passivation: a sensitive technique for detecting bulk silicon defects

甲过程浸入晶片在氢氟酸（HF）时，提出暂时达到表面钝化的一个非常高的水平，以测定硅晶片的体寿命（&gt; 100微秒）。通过这种方法，需要三个关键步骤，以实现体寿命。首先，前浸渍硅晶片在HF，它们被化学清洗，并随后蚀刻25％氢氧化四甲铵。其次，经化学处理的晶片，然后放入装满HF和盐​​酸的混合物中的大塑料容器，然后集中于感应线圈的光导率（PC）的测量结果。第三，为了抑制表面复合，并测量体寿命，晶片被照射在0.2个太阳用于使用卤素灯1分钟，照明被关闭，和PC测量立即服用。通过此过程，体硅缺陷的特性可以精确地确定。毛皮thermore，可以预料，一个敏感的RT表面钝化技术将是必不可少的检查体硅缺陷时，他们的浓度低（&lt;10 12 cm -3）的。

图1a示出的示意图和图1b示出的实验装置的照片。当硅晶片浸入HF溶液中，随后放置在寿命测试阶段和执行测量（照明之前），一个寿命曲线，它是由表面复合的限制将导致，如在图2所示的蓝色三角形。然而，当样品被照射1分钟（同时浸入HF）， 如图1，和一个测量照射后立即进行，增加的寿命会发生，如在图2中所示的?...

Watch this Scientific Journal Video about Light Enhanced Hydrofluoric Acid Passivation: A Sensitive Technique for Detecting Bulk Silicon Defects at JoVE.com

Light Enhanced Hydrofluoric Acid Passivation: A Sensitive Technique for Detecting Bulk Silicon Defects

光增强氢氟酸钝化:一个敏感的技术检测散装硅缺陷

一个RT液体表面钝化技术研究体硅缺陷的重组活性描述。对于该技术是成功的，三个关键的步骤是必需的:（ⅰ）化学清洗和硅的蚀刻，硅的（ⅱ）浸没在15％的氢氟酸和（iii）照明1分钟。

A procedure to measure the bulk lifetime (&#62;100 &#181;sec) of silicon wafers by temporarily attaining a very high level of surface passivation when ...

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Engineering

9.2K 次观看.  Australian National University. 一个RT液体表面钝化技术研究体硅缺陷的重组活性描述。对于该技术是成功的，三个关键的步骤是必需的:（ⅰ）化学清洗和硅的蚀刻，硅的（ⅱ）浸没在15％的氢氟酸和（iii）照明1分钟。 

视频: Light Enhanced Hydrofluoric Acid Passivation: A Sensitive Technique for Detecting Bulk Silicon Defects

Polycrystalline Silicon Thin-film Solar cells with Plasmonic-enhanced Light-trapping

One of major approaches to cheaper solar cells is reducing the amount of semiconductor material used for their fabrication and making cells thinner. To compensate for lower light absorption such physically thin devices have to incorporate light-trapping which increases their optical thickness. Light scattering by textured surfaces is a common technique but it cannot be universally applied to all solar cell technologies. Some cells, for example those made of evaporated silicon, are planar as produced and they require an alternative light-trapping means suitable for planar devices. Metal nanoparticles formed on planar silicon cell surface and capable of light scattering due to surface plasmon resonance is an effective approach.
The paper presents a fabrication procedure of evaporated polycrystalline silicon solar cells with plasmonic light-trapping and demonstrates how the cell quantum efficiency improves due to presence of metal nanoparticles.
To fabricate the cells a film consisting of alternative boron and phosphorous doped silicon layers is deposited on glass substrate by electron beam evaporation. An Initially amorphous film is crystallised and electronic defects are mitigated by annealing and hydrogen passivation. Metal grid contacts are applied to the layers of opposite polarity to extract electricity generated by the cell. Typically, such a ~2 &mu;m thick cell has a short-circuit current density (Jsc) of 14-16 mA/cm2, which can be increased up to 17-18 mA/cm2 (~25% higher) after application of a simple diffuse back reflector made of a white paint.
To implement plasmonic light-trapping a silver nanoparticle array is formed on the metallised cell silicon surface. A precursor silver film is deposited on the cell by thermal evaporation and annealed at 23&deg;C to form silver nanoparticles. Nanoparticle size and coverage, which affect plasmonic light-scattering, can be tuned for enhanced cell performance by varying the precursor film thickness and its annealing conditions. An optimised nanoparticle array alone results in cell Jsc enhancement of about 28%, similar to the effect of the diffuse reflector. The photocurrent can be further increased by coating the nanoparticles by a low refractive index dielectric, like MgF2, and applying the diffused reflector. The complete plasmonic cell structure comprises the polycrystalline silicon film, a silver nanoparticle array, a layer of MgF2, and a diffuse reflector. The Jsc for such cell is 21-23 mA/cm2, up to 45% higher than Jsc of the original cell without light-trapping or ~25% higher than Jsc for the cell with the diffuse reflector only.
Introduction
Light-trapping in silicon solar cells is commonly achieved via light scattering at textured interfaces. Scattered light travels through a cell at oblique angles for a longer distance and when such angles exceed the critical angle at the cell interfaces the light is permanently trapped in the cell by total internal reflection (Animation 1: Light-trapping). Although this scheme works well for most solar cells, there are developing technologies where ultra-thin Si layers are produced planar (e.g. layer-transfer technologies and epitaxial c-Si layers) 1 and or when such layers are not compatible with textures substrates (e.g. evaporated silicon) 2. For such originally planar Si layer alternative light trapping approaches, such as diffuse white paint reflector 3, silicon plasma texturing 4 or high refractive index nanoparticle reflector 5 have been suggested.
Metal nanoparticles can effectively scatter incident light into a higher refractive index material, like silicon, due to the surface plasmon resonance effect 6. They also can be easily formed on the planar silicon cell surface thus offering a light-trapping approach alternative to texturing. For a nanoparticle located at the air-silicon interface the scattered light fraction coupled into silicon exceeds 95% and a large faction of that light is scattered at angles above critical providing nearly ideal light-trapping condition (Animation 2: Plasmons on NP). The resonance can be tuned to the wavelength region, which is most important for a particular cell material and design, by varying the nanoparticle average size, surface coverage and local dielectric environment 6,7. Theoretical design principles of plasmonic nanoparticle solar cells have been suggested 8. In practice, Ag nanoparticle array is an ideal light-trapping partner for poly-Si thin-film solar cells because most of these design principle are naturally met. The simplest way of forming nanoparticles by thermal annealing of a thin precursor Ag film results in a random array with a relatively wide size and shape distribution, which is particularly suitable for light-trapping because such an array has a wide resonance peak, covering the wavelength range of 700-900 nm, important for poly-Si solar cell performance. The nanoparticle array can only be located on the rear poly-Si cell surface thus avoiding destructive interference between incident and scattered light which occurs for front-located nanoparticles 9. Moreover, poly-Si thin-film cells do not requires a passivating layer and the flat base-shaped nanoparticles (that naturally result from thermal annealing of a metal film) can be directly placed on silicon further increases plasmonic scattering efficiency due to surface plasmon-polariton resonance 10.
The cell with the plasmonic nanoparticle array as described above can have a photocurrent about 28% higher than the original cell. However, the array still transmits a significant amount of light which escapes through the rear of the cell and does not contribute into the current. This loss can be mitigated by adding a rear reflector to allow catching transmitted light and re-directing it back to the cell. Providing sufficient distance between the reflector and the nanoparticles (a few hundred nanometers) the reflected light will then experience one more plasmonic scattering event while passing through the nanoparticle array on re-entering the cell and the reflector itself can be made diffuse - both effects further facilitating light scattering and hence light-trapping. Importantly, the Ag nanoparticles have to be encapsulated with an inert and low refractive index dielectric, like MgF2 or SiO2, from the rear reflector to avoid mechanical and chemical damage 7. Low refractive index for this cladding layer is required to maintain a high coupling fraction into silicon and larger scattering angles, which are ensured by the high optical contrast between the media on both sides of the nanoparticle, silicon and dielectric 6. The photocurrent of the plasmonic cell with the diffuse rear reflector can be up to 45% higher than the current of the original cell or up to 25% higher than the current of an equivalent cell with the diffuse reflector only.

Polycrystalline silicon thin-film solar cells on glass are fabricated by deposition of boron and phosphorous doped silicon layers followed by crystallisation, defect passivation and metallisation. Plasmonic light-trapping is introduced by forming Ag nanoparticles on the silicon cell surface capped with a diffused reflector resulting in ~45% photocurrent enhancement.

多晶硅薄膜太阳能电池电浆增强光捕获

One of major approaches to cheaper solar cells is reducing the amount of semiconductor material used for their fabrication and making cells thinner. To ...

科研

工程学

Synthesis of Phase-shift Nanoemulsions with Narrow Size Distributions for Acoustic Droplet Vaporization and Bubble-enhanced Ultrasound-mediated Ablation

High-intensity focused ultrasound (HIFU) is used clinically to thermally ablate tumors. To enhance localized heating and improve thermal ablation in tumors, lipid-coated perfluorocarbon droplets have been developed which can be vaporized by HIFU. The vasculature in many tumors is abnormally leaky due to their rapid growth, and nanoparticles are able to penetrate the fenestrations and passively accumulate within tumors. Thus, controlling the size of the droplets can result in better accumulation within tumors. In this report, the preparation of stable droplets in a phase-shift nanoemulsion (PSNE) with a narrow size distribution is described. PSNE were synthesized by sonicating a lipid solution in the presence of liquid perfluorocarbon. A narrow size distribution was obtained by extruding the PSNE multiple times using filters with pore sizes of 100 or 200 nm. The size distribution was measured over a 7-day period using dynamic light scattering. Polyacrylamide hydrogels containing PSNE were prepared for in vitro experiments. PSNE droplets in the hydrogels were vaporized with ultrasound and the resulting bubbles enhanced localized heating. Vaporized PSNE enables more rapid heating and also reduces the ultrasound intensity needed for thermal ablation. Thus, PSNE is expected to enhance thermal ablation in tumors, potentially improving therapeutic outcomes of HIFU-mediated thermal ablation treatments.

Phase-shift nanoemulsions (PSNE) can be vaporized using high intensity focused ultrasound to enhance localized heating and improve thermal ablation in tumors. In this report, the preparation of stable PSNE with a narrow size distribution is described. Furthermore, the impact of vaporized PSNE on ultrasound-mediated ablation is demonstrated in tissue-mimicking phantoms.

相移窄粒度分布的纳米乳液的合成声波液滴蒸发和泡增强的超声介导消融

High-intensity  focused ultrasound (HIFU) is used clinically to thermally ablate tumors. To  enhance localized heating and improve thermal ablation in ...

Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds

Monolayer Contact Doping (MLCD) is a simple method for doping of surfaces and nanostructures1. MLCD results in the formation of highly controlled, ultra shallow and sharp doping profiles at the nanometer scale. In MLCD process the dopant source is a monolayer containing dopant atoms.
In this article a detailed procedure for surface doping of silicon substrate as well as silicon nanowires is demonstrated. Phosphorus dopant source was formed using tetraethyl methylenediphosphonate monolayer on a silicon substrate. This monolayer containing substrate was brought to contact with a pristine intrinsic silicon target substrate and annealed while in contact. Sheet resistance of the target substrate was measured using 4 point probe. Intrinsic silicon nanowires were synthesized by chemical vapor deposition (CVD) process using a vapor-liquid-solid (VLS) mechanism; gold nanoparticles were used as catalyst for nanowire growth. The nanowires were suspended in ethanol by mild sonication. This suspension was used to dropcast the nanowires on silicon substrate with a silicon nitride dielectric top layer. These nanowires were doped with phosphorus in similar manner as used for the intrinsic silicon wafer. Standard photolithography process was used to fabricate metal electrodes for the formation of nanowire based field effect transistor (NW-FET). The electrical properties of a representative nanowire device were measured by a semiconductor device analyzer and a probe station.

A detailed procedure for surface doping of Silicon interfaces is provided. The ultra-shallow surface doping is demonstrated by using phosphorus containing monolayers and rapid annealing process. The method can be used for doping of macroscopic area surfaces as well as nanostructures.

Monolayer Contact Doping (MLCD) is a simple method for doping of surfaces and nanostructures1. MLCD results in the formation of highly controlled, ultra ...

Flame Experiments at the Advanced Light Source: New Insights into Soot Formation Processes

The following experimental protocols and the accompanying video are concerned with the flame experiments that are performed at the Chemical Dynamics Beamline of the Advanced Light Source (ALS) of the Lawrence Berkeley National Laboratory1-4. This video demonstrates how the complex chemical structures of laboratory-based model flames are analyzed using flame-sampling mass spectrometry with tunable synchrotron-generated vacuum-ultraviolet (VUV) radiation. This experimental approach combines isomer-resolving capabilities with high sensitivity and a large dynamic range5,6. The first part of the video describes experiments involving burner-stabilized, reduced-pressure (20-80 mbar) laminar premixed flames. A small hydrocarbon fuel was used for the selected flame to demonstrate the general experimental approach. It is shown how species&#8217; profiles are acquired as a function of distance from the burner surface and how the tunability of the VUV photon energy is used advantageously to identify many combustion intermediates based on their ionization energies. For example, this technique has been used to study gas-phase aspects of the soot-formation processes, and the video shows how the resonance-stabilized radicals, such as C3H3, C3H5, and i-C4H5, are identified as important intermediates7. The work has been focused on soot formation processes, and, from the chemical point of view, this process is very intriguing because chemical structures containing millions of carbon atoms are assembled from a fuel molecule possessing only a few carbon atoms in just milliseconds. The second part of the video highlights a new experiment, in which an opposed-flow diffusion flame and synchrotron-based aerosol mass spectrometry are used to study the chemical composition of the combustion-generated soot particles4. The experimental results indicate that the widely accepted H-abstraction-C2H2-addition (HACA) mechanism is not the sole molecular growth process responsible for the formation of the observed large polycyclic aromatic hydrocarbons (PAHs).

Gas sampling from laboratory-scale flames with online analysis of all species by mass spectrometry is a powerful method to investigate the complex mixture of chemical compounds occurring during combustion processes. Coupled with tunable soft ionization via synchrotron-generated vacuum-ultraviolet radiation, this technique provides isomer-resolved information and potentially fragment-free mass spectra.

火焰在实验的先进光源:全新洞察烟灰形成过程

The following experimental protocols and the accompanying video are concerned with the flame experiments that are performed at the Chemical Dynamics ...

Scalable Nanohelices for Predictive Studies and Enhanced 3D Visualization

Spring-like materials are ubiquitous in nature and of interest in nanotechnology for energy harvesting, hydrogen storage, and biological sensing applications.&#160; For predictive simulations, it has become increasingly important to be able to model the structure of nanohelices accurately.&#160; To study the effect of local structure on the properties of these complex geometries one must develop realistic models.&#160; To date, software packages are rather limited in creating atomistic helical models.&#160; This work focuses on producing atomistic models of silica glass (SiO2) nanoribbons and nanosprings for molecular dynamics (MD) simulations. Using an MD model of &#8220;bulk&#8221; silica glass, two computational procedures to precisely create the shape of nanoribbons and nanosprings are presented.&#160; The first method employs the AWK programming language and open-source software to effectively carve various shapes of silica nanoribbons from the initial bulk model, using desired dimensions and parametric equations to define a helix.&#160; With this method, accurate atomistic silica nanoribbons can be generated for a range of pitch values and dimensions.&#160; The second method involves a more robust code which allows flexibility in modeling nanohelical structures.&#160; This approach utilizes a C++ code particularly written to implement pre-screening methods as well as the mathematical equations for a helix, resulting in greater precision and efficiency when creating nanospring models.&#160; Using these codes, well-defined and scalable nanoribbons and nanosprings suited for atomistic simulations can be effectively created.&#160; An added value in both open-source codes is that they can be adapted to reproduce different helical structures, independent of material.&#160; In addition, a MATLAB graphical user interface (GUI) is used to enhance learning through visualization and interaction for a general user with the atomistic helical structures.&#160; One application of these methods is the recent study of nanohelices via MD simulations for mechanical energy harvesting purposes.

Accurate modeling of nanohelical structures is important for predictive simulation studies leading to novel nanotechnology applications.&#160; Currently, software packages and codes are limited in creating atomistic helical models.&#160; We present two procedures designed to create atomistic nanohelical models for simulations, and a graphical interface to enhance research through visualization.

可扩展的Nanohelices的预测研究和增强的3D可视化

Spring-like materials are ubiquitous in nature and of interest in nanotechnology for energy harvesting, hydrogen storage, and biological sensing ...

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

As mass-produced silicon transistors have reached the nano-scale, their behavior and performances are increasingly affected, and often deteriorated, by quantum mechanical effects such as tunneling through single dopants, scattering via interface defects, and discrete trap charge states. However, progress in silicon technology has shown that these phenomena can be harnessed and exploited for a new class of quantum-based electronics. Among others, multi-layer-gated silicon metal-oxide-semiconductor (MOS) technology can be used to control single charge or spin confined in electrostatically-defined quantum dots (QD). These QD-based devices are an excellent platform for quantum computing applications and, recently, it has been demonstrated that they can also be used as single-electron pumps, which are accurate sources of quantized current for metrological purposes. Here, we discuss in detail the fabrication protocol for silicon MOS QDs which is relevant to both quantum computing and quantum metrology applications. Moreover, we describe characterization methods to test the integrity of the devices after fabrication. Finally, we give a brief description of the measurement set-up used for charge pumping experiments and show representative results of electric current quantization.

The fabrication process and experimental characterization techniques relevant to single-electron pumps based on silicon metal-oxide-semiconductor quantum dots are discussed.

硅金属 - 氧化物 - 半导体量子点单电子泵

As mass-produced silicon transistors have reached the nano-scale, their behavior and performances are increasingly affected, and often deteriorated, by ...

Integration of Light Trapping Silver Nanostructures in Hydrogenated Microcrystalline Silicon Solar Cells by Transfer Printing

One of the potential applications of metal nanostructures is light trapping in solar cells, where unique optical properties of nanosized metals, commonly known as plasmonic effects, play an important role. Research in this field has, however, been impeded owing to the difficulty of fabricating devices containing the desired functional metal nanostructures. In order to provide a viable strategy to this issue, we herein show a transfer printing-based approach that allows the quick and low-cost integration of designed metal nanostructures with a variety of device architectures, including solar cells. Nanopillar poly(dimethylsiloxane) (PDMS) stamps were fabricated from a commercially available nanohole plastic film as a master mold. On this nanopatterned PDMS stamps, Ag films were deposited, which were then transfer-printed onto block copolymer (binding layer)-coated hydrogenated microcrystalline Si (&#181;c-Si:H) surface to afford ordered Ag nanodisk structures. It was confirmed that the resulting Ag nanodisk-incorporated &#181;c-Si:H solar cells show higher performances compared to a cell without the transfer-printed Ag nanodisks, thanks to plasmonic light trapping effect derived from the Ag nanodisks. Because of the simplicity and versatility, further device application would also be feasible thorough this approach.

A viable transfer printing-based methodology to introduce plasmonic metal nanostructures in solar cells is described. Using nanopillar poly(dimethylsiloxane) stamps, an Ag-based ordered nanodisk array was integrated with standard hydrogenated microcrystalline Si solar cells, which led to improved device performances due to plasmonic light trapping.

灯光诱杀银纳米结构通过转移印花在氢化微晶硅太阳能电池集成

One of the potential applications of metal nanostructures is light trapping in solar cells, where unique optical properties of nanosized metals, commonly ...

Printing Fabrication of Bulk Heterojunction Solar Cells and In Situ Morphology Characterization

Polymer-based materials hold promise as low-cost, flexible efficient photovoltaic devices. Most laboratory efforts to achieve high performance devices have used devices prepared by spin coating, a process that is not amenable to large-scale fabrication. This mismatch in device fabrication makes it difficult to translate quantitative results obtained in the laboratory to the commercial level, making optimization difficult. Using a mini-slot die coater, this mismatch can be resolved by translating the commercial process to the laboratory and characterizing the structure formation in the active layer of the device in real time and in situ as films are coated onto a substrate. The evolution of the morphology was characterized under different conditions, allowing us to propose a mechanism by which the structures form and grow. This mini-slot die coater offers a simple, convenient, material efficient route by which the morphology in the active layer can be optimized under industrially relevant conditions. The goal of this protocol is to show experimental details of how a solar cell device is fabricated using a mini-slot die coater and technical details of running in situ structure characterization using the mini-slot die coater.

Printing Fabrication of Bulk Heterojunction Solar Cells and In Situ Morphology Characterization

Here, we present a protocol to fabricate organic thin film solar cells using a mini-slot die coater and related in-line structure characterizations using synchrotron scattering techniques.

散装异质结太阳能电池的印刷和制作<em&gt;原位</em&gt;形态特征

Polymer-based materials hold promise as low-cost, flexible efficient photovoltaic devices. Most laboratory efforts to achieve high performance devices ...

Fabrication and Operation of Acoustofluidic Devices Supporting Bulk Acoustic Standing Waves for Sheathless Focusing of Particles

Acoustophoresis refers to the displacement of suspended objects in response to directional forces from sound energy. Given that the suspended objects must be smaller than the incident wavelength of sound and the width of the fluidic channels are typically tens to hundreds of micrometers across, acoustofluidic devices typically use ultrasonic waves generated from a piezoelectric transducer pulsating at high frequencies (in the megahertz range). At characteristic frequencies that depend on the geometry of the device, it is possible to induce the formation of standing waves that can focus particles along desired fluidic streamlines within a bulk flow. Here, we describe a method for the fabrication of acoustophoretic devices from common materials and clean room equipment. We show representative results for the focusing of particles with positive or negative acoustic contrast factors, which move towards the pressure nodes or antinodes of the standing waves, respectively. These devices offer enormous practical utility for precisely positioning large numbers of microscopic entities (e.g., cells) in stationary or flowing fluids for applications ranging from cytometry to assembly.

Acoustofluidic devices use ultrasonic waves within microfluidic channels to manipulate, concentrate and isolate suspended micro and nanoscopic entities. This protocol describes the fabrication and operation of such a device supporting bulk acoustic standing waves to focus particles in a central streamline without the aid of sheath fluids.

制造和Acoustofluidic设备的运营支撑体声波驻波的聚焦鞘颗粒

Acoustophoresis refers to the displacement of suspended objects in response to directional forces from sound energy. Given that the suspended objects must ...

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source

Silicon photonic chips have the potential to realize complex integrated quantum information processing circuits, including photon sources, qubit manipulation, and integrated single-photon detectors. Here, we present the key aspects of preparing and testing a silicon photonic quantum chip with an integrated photon source and two-photon interferometer. The most important aspect of an integrated quantum circuit is minimizing loss so that all of the generated photons are detected with the highest possible fidelity. Here, we describe how to perform low-loss edge coupling by using an ultra-high numerical aperture fiber to closely match the mode of the silicon waveguides. By using an optimized fusion splicing recipe, the UHNA fiber is seamlessly interfaced with a standard single-mode fiber. This low-loss coupling allows the measurement of high-fidelity photon production in an integrated silicon ring resonator and the subsequent two-photon interference of the produced photons in a closely integrated Mach-Zehnder interferometer. This paper describes the essential procedures for the preparation and characterization of high-performance and scalable silicon quantum photonic circuits.

Silicon photonic chips have the potential to realize complex integrated quantum systems. Presented here is a method for preparing and testing a silicon photonic chip for quantum measurements.

光增强氢氟酸钝化:一个敏感的技术检测散装硅缺陷

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